| dbo:abstract |
Process variation is the naturally occurring variation in the attributes of transistors (length, widths, oxide thickness) when integrated circuits are fabricated. The amount of process variation becomes particularly pronounced at smaller process nodes (<65 nm) as the variation becomes a larger percentage of the full length or width of the device and as feature sizes approach the fundamental dimensions such as the size of atoms and the wavelength of usable light for patterning lithography masks. Process variation causes measurable and predictable variance in the output performance of all circuits but particularly analog circuits due to mismatch. If the variance causes the measured or simulated performance of a particular output metric (bandwidth, gain, rise time, etc.) to fall below or rise above the specification for the particular circuit or device, it reduces the overall yield for that set of devices. (en) |
| dbo:wikiPageExternalLink |
https://www.edn.com/nanometer-cmos-process-variations-are-they-inevitable-or-a-symptom-or-immaturity%7CNanometer https://www.youtube.com/watch%3Fv=rf8qTpW6BH4%7CCMOS http://www.stanford.edu/class/ee380/Abstracts/080402-jhpatel.pdf |
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dbr:Integrated_circuit dbr:MOSFET dbr:Front_end_of_line dbr:William_Shockley dbr:Analog_circuit dbr:Die_shrink dbr:Semiconductor_device_fabrication dbc:Semiconductor_device_fabrication dbr:Threshold_voltage dbr:Photolithography dbr:Process_corners dbr:Transistor_models dbr:Semiconductor_fabrication |
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dbt:Reflist dbt:See_also |
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dbc:Semiconductor_device_fabrication |
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owl:Thing |
| rdfs:comment |
Process variation is the naturally occurring variation in the attributes of transistors (length, widths, oxide thickness) when integrated circuits are fabricated. The amount of process variation becomes particularly pronounced at smaller process nodes (<65 nm) as the variation becomes a larger percentage of the full length or width of the device and as feature sizes approach the fundamental dimensions such as the size of atoms and the wavelength of usable light for patterning lithography masks. (en) |
| rdfs:label |
Process variation (semiconductor) (en) |
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dbr:Back_end_of_line |
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freebase:Process variation (semiconductor) wikidata:Process variation (semiconductor) https://global.dbpedia.org/id/4tjfq |
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wikipedia-en:Process_variation_(semiconductor)?oldid=1071198366&ns=0 |
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wikipedia-en:Process_variation_(semiconductor) |
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dbr:William_Shockley |
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dbr:Quasi-delay-insensitive_circuit dbr:MOSFET dbr:William_Shockley dbr:Semiconductor_device_fabrication dbr:Three-dimensional_integrated_circuit |
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