| dbo:abstract |
Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator. It is used to program NAND flash memory. The process used for erasing is called tunnel release. This injection is achieved by creating a large voltage difference between the gate and the body of the MOSFET. When VGB >> 0, electrons are injected into the floating gate. When VGB << 0, electrons are forced out of the floating gate. An alternative to tunnel injection is the . (en) 터널 주입(Tunnel injection)은 전하 운반자가 에 얇은 층의 절연체를 통과하여 주입될 때 양자 터널링 효과로 파울러-노르트하임 터널 주입이라고도 불린다. 그것은 NAND 플래시 메모리를 프로그램하는데 이용된다. 소거를 위한 과정은 라 불린다. (ko) |
| dbo:wikiPageID |
2973881 (xsd:integer) |
| dbo:wikiPageLength |
906 (xsd:nonNegativeInteger) |
| dbo:wikiPageRevisionID |
1099248054 (xsd:integer) |
| dbo:wikiPageWikiLink |
dbr:Charge_carrier dbc:Quantum_mechanics dbr:Field_electron_emission dbr:Flash_memory dbc:Semiconductors dbr:Hot_carrier_injection dbr:Fowler–Nordheim_tunneling dbr:Spin_injection |
| dbp:auto |
yes (en) |
| dbp:date |
December 2009 (en) |
| dbp:wikiPageUsesTemplate |
dbt:Quantum-stub dbt:Reflist dbt:Unreferenced |
| dct:subject |
dbc:Quantum_mechanics dbc:Semiconductors |
| gold:hypernym |
dbr:Effect |
| rdf:type |
yago:WikicatSemiconductors yago:Abstraction100002137 yago:Conductor114821043 yago:Material114580897 yago:Matter100020827 yago:Part113809207 yago:PhysicalEntity100001930 yago:Relation100031921 dbo:Disease yago:Semiconductor114821248 yago:Substance100019613 |
| rdfs:comment |
터널 주입(Tunnel injection)은 전하 운반자가 에 얇은 층의 절연체를 통과하여 주입될 때 양자 터널링 효과로 파울러-노르트하임 터널 주입이라고도 불린다. 그것은 NAND 플래시 메모리를 프로그램하는데 이용된다. 소거를 위한 과정은 라 불린다. (ko) Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator. It is used to program NAND flash memory. The process used for erasing is called tunnel release. This injection is achieved by creating a large voltage difference between the gate and the body of the MOSFET. When VGB >> 0, electrons are injected into the floating gate. When VGB << 0, electrons are forced out of the floating gate. (en) |
| rdfs:label |
터널 주입 (ko) Tunnel injection (en) |
| owl:sameAs |
freebase:Tunnel injection yago-res:Tunnel injection wikidata:Tunnel injection dbpedia-ko:Tunnel injection https://global.dbpedia.org/id/4wFLD |
| prov:wasDerivedFrom |
wikipedia-en:Tunnel_injection?oldid=1099248054&ns=0 |
| foaf:isPrimaryTopicOf |
wikipedia-en:Tunnel_injection |
| is dbo:wikiPageRedirects of |
dbr:Tunnel_release |
| is dbo:wikiPageWikiLink of |
dbr:Index_of_physics_articles_(T) dbr:Flash_memory dbr:History_of_science_and_technology_in_Japan dbr:Reading_(computer) dbr:Tunnel_release |
| is foaf:primaryTopic of |
wikipedia-en:Tunnel_injection |