High temperature operation of far infrared (λ ≈20 µm) InAs/AlSb quantum cascade lasers with dielectric waveguide - PubMed (original) (raw)
. 2015 Jan 26;23(2):1523-8.
doi: 10.1364/OE.23.001523.
- PMID: 25835909
- DOI: 10.1364/OE.23.001523
Free article
High temperature operation of far infrared (λ ≈20 µm) InAs/AlSb quantum cascade lasers with dielectric waveguide
M Bahriz et al. Opt Express. 2015.
Free article
Abstract
We demonstrate the high temperature operation, up to 80°C, of quantum cascade lasers emitting at a wavelength of 20 µm. The lasers are based on the InAs/AlSb materials and take benefit of a low loss plasmon-enhanced dielectric waveguide. The waveguide consists of doped InAs cladding layers and low-doped InAs spacers. For 2.9-mm-long devices, the threshold current density is 4.3 kA/cm2 and the measured peak output power is 7 mW at room temperature. The cavity length dependence of the threshold currents also indicates that very large optical gain is achieved and effectively overcome the strong free carrier absorption.
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