Maqsood Ali Mughal | Arkansas State University (original) (raw)

Uploads

Papers by Maqsood Ali Mughal

Research paper thumbnail of Photoelectrochemical characterization of titania photoanodes fabricated using varying anodization parameters

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Progress in Indium (III) Sulfide (In2S3) Buffer Layer Deposition Techniques for CIS, CIGS, and CdTe-based Thin Film Solar Cells

ELSEVIER, Jul 31, 2015

Recent progress with indium (III) sulfide (In2S3)-buffered thin film solar cells (TFSC) was brief... more Recent progress with indium (III) sulfide (In2S3)-buffered thin film solar cells (TFSC) was briefly reviewed. In2S3 has emerged as a promising low-hazard buffer (or window) material, and has proven to improve the properties of the solar cells, while reducing toxicity. Various deposition techniques have been employed to synthesize In2S3 films on different types of substrates. Until now, atomic layer deposition (ALD) and ionic layer gas atomic reaction (ILGAR) techniques have been the two most successful, yielding maximum energy conversion efficiencies up to 16.4% and 16.1%, respectively. The impact of varied deposition parameters upon the In2S3 film properties and performance of cadmium (Cd)-free solar cells has been outlined. A comparative/operational analysis (solar cell efficiencies above 9% reported for cell area ≤ 1cm2) of various buffer layers used in two primary types of TFSC technology: chalcopyrite (CIS/CIGS)- and CdTe-based solar cells was also performed to measure the progress of In2S3 compared to its counterparts.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Optimization of the Electrodeposition Parameters to Improve the Stoichiometry of Indium Sulfide (In2S3) Films for Solar Applications Using the Taguchi Method

Properties of electrodeposited semiconductor thin films are dependent upon the electrolyte compos... more Properties of electrodeposited semiconductor thin films are dependent upon the electrolyte composition, plating time, and temperature as well as the current density and the nature of the substrate. In this study, the influence of the electrodeposition parameters such as deposition voltage, deposition time, composition of solution, and deposition temperature upon the properties of In2S3 films was analyzed by the Taguchi Method. According to Taguchi analysis, the interaction between deposition voltage and deposition time was significant. Deposition voltage had the largest impact upon the stoichiometry of In2S3 films and deposition temperature had the least impact. The stoichiometric ratios between sulfur and indium (S/In: 3/2) obtained from experiments performed with optimized electrodeposition parameters were in agreement with predicted values from the Taguchi Method. The experiments were carried out according to Taguchi orthogonal array L27 () design of experiments (DOE). Approximately 600 nm thick In2S3 films were electrodeposited from an organic bath (ethylene glycol-based) containing indium chloride (InCl3), sodium chloride (NaCl), and sodium thiosulfate (Na2S2O3·5H2O), the latter used as an additional sulfur source along with elemental sulfur (S). An X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) unit, and scanning electron microscope (SEM) were, respectively, used to analyze the phases, elemental composition, and morphology of the electrodeposited In2S3 films.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Morphological and Compositional Analysis of Electrodeposited Indium (III) Sulfide (In2S3) Films

Within the last few years, there has been notable progress in understanding the growth mechanisms... more Within the last few years, there has been notable progress in understanding the growth mechanisms of semiconductor thin films for photovoltaic (PV) applications. Electrodeposition continues to be a complex deposition technique that can lead to regions of low quality (for example, cracks) in films. Such cracks can form porous zones on the substrate and diminish the heterojunction interface quality of a PV cell. In this paper, electrodeposition of In2S3 films was systematically and quantitatively investigated by varying electrodeposition parameters including bath composition, current density, deposition time, and deposition temperature. Their effects upon the morphology, composition, and film growth mechanism were studied with the help of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and digital imaging analysis (using fracture and buckling analysis software). In addition, the effect of different annealing treatments (200°C, 300°C, and 400°C in air) and coated glass-substrates (Mo, ITO, and FTO) upon the properties of the In2S3 films was analyzed. Furthermore, the Taguchi/Design of Experiments (DOE) Method was used to determine the optimal electrodeposition parameters in order to improve the properties.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Statistical Analysis of Electroplated Indium (III) Sulfide (In 2 S 3 ) Films, a Potential Buffer Material for PV (Heterojunction Solar Cells) Systems, using Organic Electrolytes Engineering Management Graduate Program

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Statistical Analysis of Electroplated Indium (III) Sulfide (In 2 S 3 ) Films, a Potential Buffer Material for PV (Heterojunction Solar Cells) Systems, using Organic Electrolytes

In 2 S 3 has received attention as an alternative to CdS as the buffer layer in heterojunction s... more In 2 S 3 has received attention as an alternative to CdS as the buffer layer in heterojunction solar cells. Although having a bandgap of 2.0 eV relative to 2.5 eV for CdS, the lower toxicity and environmental impact of indium relative to cadmium, and significant photosensitivity, compel ongoing research [1]. Indium sulfide thin films were deposited onto molybdenum-coated glass (SiO 2) substrates by electrodeposition from organic baths (ethylene glycol-based) containing indium chloride (InCl 3), sodium chloride (NaCl), and sodium thiosulfate (Na 2 S 2 O 3 .5H 2 O), the latter used as an additional sulfur source along with elemental sulfur (S). The Taguchi method was used to optimize the deposition paramters so as to minimize non-uniformity, cracks, and improper stoichiometry. The measured performance characteristics (molar ratio (In:S) and crack density) for all of the In 2 S 3 films were calculated to analyze the effect of each deposition factor (deposition voltage, deposition temperature, composition of solution, and deposition time) involved in the electrodeposition process by calculating the sensitivity (signal to noise, S/N, ratios).

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Stoichiometric Control via Periods of Open-circuit During Electrodeposition

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Morphological and compositional analysis of electrodeposited indium (III) sulfide (In<inf>2</inf>S<inf>3</inf>) films

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014

Bookmarks Related papers MentionsView impact

Research paper thumbnail of ELEMENTAL SULFUR-BASED ELECTRODEPOSITION OF INDIUM SULFIDE FILMS

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Photoelectrochemical characterization of titania photoanodes fabricated using varying anodization parameters

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Progress in Indium (III) Sulfide (In2S3) Buffer Layer Deposition Techniques for CIS, CIGS, and CdTe-based Thin Film Solar Cells

ELSEVIER, Jul 31, 2015

Recent progress with indium (III) sulfide (In2S3)-buffered thin film solar cells (TFSC) was brief... more Recent progress with indium (III) sulfide (In2S3)-buffered thin film solar cells (TFSC) was briefly reviewed. In2S3 has emerged as a promising low-hazard buffer (or window) material, and has proven to improve the properties of the solar cells, while reducing toxicity. Various deposition techniques have been employed to synthesize In2S3 films on different types of substrates. Until now, atomic layer deposition (ALD) and ionic layer gas atomic reaction (ILGAR) techniques have been the two most successful, yielding maximum energy conversion efficiencies up to 16.4% and 16.1%, respectively. The impact of varied deposition parameters upon the In2S3 film properties and performance of cadmium (Cd)-free solar cells has been outlined. A comparative/operational analysis (solar cell efficiencies above 9% reported for cell area ≤ 1cm2) of various buffer layers used in two primary types of TFSC technology: chalcopyrite (CIS/CIGS)- and CdTe-based solar cells was also performed to measure the progress of In2S3 compared to its counterparts.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Optimization of the Electrodeposition Parameters to Improve the Stoichiometry of Indium Sulfide (In2S3) Films for Solar Applications Using the Taguchi Method

Properties of electrodeposited semiconductor thin films are dependent upon the electrolyte compos... more Properties of electrodeposited semiconductor thin films are dependent upon the electrolyte composition, plating time, and temperature as well as the current density and the nature of the substrate. In this study, the influence of the electrodeposition parameters such as deposition voltage, deposition time, composition of solution, and deposition temperature upon the properties of In2S3 films was analyzed by the Taguchi Method. According to Taguchi analysis, the interaction between deposition voltage and deposition time was significant. Deposition voltage had the largest impact upon the stoichiometry of In2S3 films and deposition temperature had the least impact. The stoichiometric ratios between sulfur and indium (S/In: 3/2) obtained from experiments performed with optimized electrodeposition parameters were in agreement with predicted values from the Taguchi Method. The experiments were carried out according to Taguchi orthogonal array L27 () design of experiments (DOE). Approximately 600 nm thick In2S3 films were electrodeposited from an organic bath (ethylene glycol-based) containing indium chloride (InCl3), sodium chloride (NaCl), and sodium thiosulfate (Na2S2O3·5H2O), the latter used as an additional sulfur source along with elemental sulfur (S). An X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) unit, and scanning electron microscope (SEM) were, respectively, used to analyze the phases, elemental composition, and morphology of the electrodeposited In2S3 films.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Morphological and Compositional Analysis of Electrodeposited Indium (III) Sulfide (In2S3) Films

Within the last few years, there has been notable progress in understanding the growth mechanisms... more Within the last few years, there has been notable progress in understanding the growth mechanisms of semiconductor thin films for photovoltaic (PV) applications. Electrodeposition continues to be a complex deposition technique that can lead to regions of low quality (for example, cracks) in films. Such cracks can form porous zones on the substrate and diminish the heterojunction interface quality of a PV cell. In this paper, electrodeposition of In2S3 films was systematically and quantitatively investigated by varying electrodeposition parameters including bath composition, current density, deposition time, and deposition temperature. Their effects upon the morphology, composition, and film growth mechanism were studied with the help of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and digital imaging analysis (using fracture and buckling analysis software). In addition, the effect of different annealing treatments (200°C, 300°C, and 400°C in air) and coated glass-substrates (Mo, ITO, and FTO) upon the properties of the In2S3 films was analyzed. Furthermore, the Taguchi/Design of Experiments (DOE) Method was used to determine the optimal electrodeposition parameters in order to improve the properties.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Statistical Analysis of Electroplated Indium (III) Sulfide (In 2 S 3 ) Films, a Potential Buffer Material for PV (Heterojunction Solar Cells) Systems, using Organic Electrolytes Engineering Management Graduate Program

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Statistical Analysis of Electroplated Indium (III) Sulfide (In 2 S 3 ) Films, a Potential Buffer Material for PV (Heterojunction Solar Cells) Systems, using Organic Electrolytes

In 2 S 3 has received attention as an alternative to CdS as the buffer layer in heterojunction s... more In 2 S 3 has received attention as an alternative to CdS as the buffer layer in heterojunction solar cells. Although having a bandgap of 2.0 eV relative to 2.5 eV for CdS, the lower toxicity and environmental impact of indium relative to cadmium, and significant photosensitivity, compel ongoing research [1]. Indium sulfide thin films were deposited onto molybdenum-coated glass (SiO 2) substrates by electrodeposition from organic baths (ethylene glycol-based) containing indium chloride (InCl 3), sodium chloride (NaCl), and sodium thiosulfate (Na 2 S 2 O 3 .5H 2 O), the latter used as an additional sulfur source along with elemental sulfur (S). The Taguchi method was used to optimize the deposition paramters so as to minimize non-uniformity, cracks, and improper stoichiometry. The measured performance characteristics (molar ratio (In:S) and crack density) for all of the In 2 S 3 films were calculated to analyze the effect of each deposition factor (deposition voltage, deposition temperature, composition of solution, and deposition time) involved in the electrodeposition process by calculating the sensitivity (signal to noise, S/N, ratios).

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Stoichiometric Control via Periods of Open-circuit During Electrodeposition

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Morphological and compositional analysis of electrodeposited indium (III) sulfide (In<inf>2</inf>S<inf>3</inf>) films

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014

Bookmarks Related papers MentionsView impact

Research paper thumbnail of ELEMENTAL SULFUR-BASED ELECTRODEPOSITION OF INDIUM SULFIDE FILMS

Bookmarks Related papers MentionsView impact