Nicole Herbots | Arizona State University (original) (raw)
N. Herbots received her engineering physics PhD from the Catholic University of Louvain. After joining Oak Ridge National Lab in the Solid State Division, she became IBM Prof. of Electronic Materials at MIT in 1987 and joined Arizona State University Physics in 1991 to create the Ion Beam Analysis for Materials (IBeAM) user facility at ASU
Supervisors: SiO2 Innovates and MicroDrop Diagnostics, Boards of Advisors, Dr. Eric J. Culbertson, MD, GS, P. D. Glass, RN, Surveyor, Alan Carey, Global Business, LM Puglisi, IT and N. Herbots PhD thesis advisor, was Prof. Dr. Fernand VAN de WIELE, professeur ordinaire à la Faculté des sciences appliquées ;
Phone: 480-965-3561 (department office, email is better)
Address: Arizona State University
Department of Physics,
PO Box 85287-1504
Tempe AZ 85287
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Papers by Nicole Herbots
AIP Conference Proceedings, 1988
Journal of Vacuum Science & Technology A, 1987
FIELD OF THE INVENTION This invention relates to methods for bonding substrates, and in particula... more FIELD OF THE INVENTION This invention relates to methods for bonding substrates, and in particular, bonding of semiconductor and/or semiconductor oxide and nitride wafers. BACKGROUND OF THE INVENTION The long-term reliability of multicomponent devices such as bio-sensors and solar cells is at least in part determined by the robustness of the bonding methods used to hold the devices together. Typically, epoxy bonding methods are used to prepare such devices, but suffer from the limitations of limited longevity (10 years) as well as poor thermal matching between components which can lead to internal stresses and ultimately bonding failure. Implantable bio-sensor devices need to be hermetically sealed in a saline environment such as a human or an animal body for the lifetime of the implant. As many biosensors and solar cells are typically based on silica wafers (boro-silicate, alpha-quartz, etc.) and Si(100) wafers, there exists a need in the art for improved methods for bonding the sa...
MRS Proceedings, 1994
ABSTRACTReal space plan-view Transmission Electron Microscopy (TEM) of the interfacial structure ... more ABSTRACTReal space plan-view Transmission Electron Microscopy (TEM) of the interfacial structure at the amorphous-Ge / Si (111) interface is presented. Ge is deposited at between room temperature and 150°C on either a 5×5 or 7×7 reconstructed surface. Conventional Plan-view TEM analysis reveals microstructural details such as surface steps, reconstruction phase shift boundaries and the reconstruction itself buried under the amorphous film, features which have previously been seen only as clean surfaces in UHV. Also imaged are small regions where Ge grows epitaxially on the Si surface above room temperature. These are seen to appear preferentially at steps and phase shift boundaries.
Materials Science and Engineering: R: Reports, 1996
Materials Science and Engineering: B, 1992
... Abstract. Low energy ion beam oxidation (IBO) of Si(100) and germanium and Si 1−x Ge x grown ... more ... Abstract. Low energy ion beam oxidation (IBO) of Si(100) and germanium and Si 1−x Ge x grown by molecular beam epitaxy on Si(100) was investigated at room temperature using 18 O 2 + ion beams with energies E ion ranging from 100 eV to 1 keV. ...
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1991
Low-energy (< 1 keV) ions are used in a variety of thin-film techniques. When low-energy ions ... more Low-energy (< 1 keV) ions are used in a variety of thin-film techniques. When low-energy ions are used during growth, the atomic mobility is athermally enhanced. This can lead to a significant lowering of the temperature necessary to induce epitaxial growth and chemical reactions. Athermal enhancement of atomic mobility in semiconductors can be described below the temperature for plastic deformation ( T = 540°C in Si) by classifying the mechanisms involved into three categories according to their respective timescale: collisions, elastic recombination, and thermal diffusion. A quantitative model can then be derived to predict the conditions of temperature, dose rate, and energy to obtain thin film growth, epitaxial growth, and oxidation in techniques such as ion beam deposition (IBD), and ion beam oxidation (IBO). Using computer simulations, the dynamics of defect generation and redistribution, and the resulting thin-film growth rate can be investigated. Energies below 200 eV are...
![Research paper thumbnail of Heteroepitaxial properties of Si[sub 1−x−y]Ge[sub x]C[sub y] on Si(100) grown by combined ion- and molecular-beam deposition](https://attachments.academia-assets.com/75439721/thumbnails/1.jpg)
](Journal of Applied Physics, 1997
Materials Science and Engineering: R: Reports, 1996
Applied Physics Letters, 2004
Applied Physics Letters, 1988
ABSTRACT A new physical phenomenon causing oxidation of silicon has been observed. The phenomenon... more ABSTRACT A new physical phenomenon causing oxidation of silicon has been observed. The phenomenon is controlled by the impact of an energetic ion beam on a clean silicon target exposed to low‐pressure oxygen. An oxide layer of 50–100 Å can be formed at room temperature by properly choosing the oxidation conditions. The growth was studied in situ by measuring the ion‐induced secondary electron yield. A strong dependence on oxygen pressure and target temperature was observed. By studying the oxide with x‐ray photoelectron spectroscopy, it was concluded that the film formed is stoichiometric SiO 2 . A discussion on possible growth mechanisms is carried out in terms of ion energy deposition.
AIP Conference Proceedings, 1988
Journal of Vacuum Science & Technology A, 1987
FIELD OF THE INVENTION This invention relates to methods for bonding substrates, and in particula... more FIELD OF THE INVENTION This invention relates to methods for bonding substrates, and in particular, bonding of semiconductor and/or semiconductor oxide and nitride wafers. BACKGROUND OF THE INVENTION The long-term reliability of multicomponent devices such as bio-sensors and solar cells is at least in part determined by the robustness of the bonding methods used to hold the devices together. Typically, epoxy bonding methods are used to prepare such devices, but suffer from the limitations of limited longevity (10 years) as well as poor thermal matching between components which can lead to internal stresses and ultimately bonding failure. Implantable bio-sensor devices need to be hermetically sealed in a saline environment such as a human or an animal body for the lifetime of the implant. As many biosensors and solar cells are typically based on silica wafers (boro-silicate, alpha-quartz, etc.) and Si(100) wafers, there exists a need in the art for improved methods for bonding the sa...
MRS Proceedings, 1994
ABSTRACTReal space plan-view Transmission Electron Microscopy (TEM) of the interfacial structure ... more ABSTRACTReal space plan-view Transmission Electron Microscopy (TEM) of the interfacial structure at the amorphous-Ge / Si (111) interface is presented. Ge is deposited at between room temperature and 150°C on either a 5×5 or 7×7 reconstructed surface. Conventional Plan-view TEM analysis reveals microstructural details such as surface steps, reconstruction phase shift boundaries and the reconstruction itself buried under the amorphous film, features which have previously been seen only as clean surfaces in UHV. Also imaged are small regions where Ge grows epitaxially on the Si surface above room temperature. These are seen to appear preferentially at steps and phase shift boundaries.
Materials Science and Engineering: R: Reports, 1996
Materials Science and Engineering: B, 1992
... Abstract. Low energy ion beam oxidation (IBO) of Si(100) and germanium and Si 1−x Ge x grown ... more ... Abstract. Low energy ion beam oxidation (IBO) of Si(100) and germanium and Si 1−x Ge x grown by molecular beam epitaxy on Si(100) was investigated at room temperature using 18 O 2 + ion beams with energies E ion ranging from 100 eV to 1 keV. ...
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 1991
Low-energy (< 1 keV) ions are used in a variety of thin-film techniques. When low-energy ions ... more Low-energy (< 1 keV) ions are used in a variety of thin-film techniques. When low-energy ions are used during growth, the atomic mobility is athermally enhanced. This can lead to a significant lowering of the temperature necessary to induce epitaxial growth and chemical reactions. Athermal enhancement of atomic mobility in semiconductors can be described below the temperature for plastic deformation ( T = 540°C in Si) by classifying the mechanisms involved into three categories according to their respective timescale: collisions, elastic recombination, and thermal diffusion. A quantitative model can then be derived to predict the conditions of temperature, dose rate, and energy to obtain thin film growth, epitaxial growth, and oxidation in techniques such as ion beam deposition (IBD), and ion beam oxidation (IBO). Using computer simulations, the dynamics of defect generation and redistribution, and the resulting thin-film growth rate can be investigated. Energies below 200 eV are...
Journal of Applied Physics, 1997
Materials Science and Engineering: R: Reports, 1996
Applied Physics Letters, 2004
Applied Physics Letters, 1988
ABSTRACT A new physical phenomenon causing oxidation of silicon has been observed. The phenomenon... more ABSTRACT A new physical phenomenon causing oxidation of silicon has been observed. The phenomenon is controlled by the impact of an energetic ion beam on a clean silicon target exposed to low‐pressure oxygen. An oxide layer of 50–100 Å can be formed at room temperature by properly choosing the oxidation conditions. The growth was studied in situ by measuring the ion‐induced secondary electron yield. A strong dependence on oxygen pressure and target temperature was observed. By studying the oxide with x‐ray photoelectron spectroscopy, it was concluded that the film formed is stoichiometric SiO 2 . A discussion on possible growth mechanisms is carried out in terms of ion energy deposition.
Ion Beam Analysis (IBA) using 4He+ ion channeling combined with Nuclear Resonance Analysis (NRA) ... more Ion Beam Analysis (IBA) using 4He+ ion channeling combined with Nuclear Resonance Analysis (NRA) and 3DMultiString computer simulations detect order in silicon dioxide (SiO2) nucleated on (1×1) Si(100) via the Herbots-Atluri clean (U.S. patent 6,613,677) in air at 300 K. Alignment of the SiO2 to Si(100) is also supported by 10 keV Reflection High Energy Electron Diffraction (RHEED). Infrared spectroscopy of ordered oxides exhibit a constant, well-defined frequency of optical absorption across a 1 nm thickness in the interfacial region near Si, supporting the presence of a well defined bond-length and stoichiometry as detected by IBA and RHEED. Comparison between HRTEM and ellipsometry measurements show that the HRTEM thickness is significantly lower, by 30%, when compared to the thickness measured by ellipsometry, indicating a change in optical properties. In this work IBA is combined with 3DMultiString to identify a new heteroepitaxial nanophase of tetragonally distorted β-cristobalite SiO2 (annotated β-c SiO2) extending to a critical thickness of 2 nm from the (1×1) Si (100)/β-c SiO2 interface to the β-c SiO2 /amorphous SiO2 interface (annotated β-c SiO2/a-SiO2). 3DMultiString simulations of IBA data taken on the newly identified β-c SiO2/(1×1) Si(100) interphase includes channeling along the three <100>, <110>, and <111> axes of Si (100) in combination 16O(α, α)16O 3.045 MeV NRA to measure oxygen areal densities corresponding to nm-thick films. In this manner, the critical thickness of the new heteroepitaxial β-c SiO2 nanophase can be established as a function of oxygen coverage.
Our most recent research and technology disclosures are at the boundary of condensed matter physi... more Our most recent research and technology disclosures are at the boundary of condensed matter physics, biology and medical electronics, such as integrating single device medical implants (artificial pancreas) with Nano-Bonding™ and controlling hydro-affinity & pepto-affinity of inter-ocular lenses (IOL), laparoscope lenses and other human device implants with VitreOx™ & ProteinKnox™ (Patents pending).
We research & model synthesis of new semiconductor nano-phases such as sub-nanometer ordered silicon oxides (US Patent 7,851,365 granted on 12/12/10 ) & SiGeO2 (US patent 5,124,421). Our methods include CIMD (US Patent 4,800,200) & new low temperature techniques such as the Herbots-Atluri process (US patent 6,613,677, granted 9/2/03) to produce either templates for (hetero) epitaxy in our clean-room laboratory, "nano-stacks" of ultrathin films to create high performance gate oxides, peroskvites and photovoltaic surfaces