Deb Kumar Shah | Chonbuk National University (original) (raw)
Papers by Deb Kumar Shah
Science of advanced materials, 2024
This research investigates the optical, structural, and photovoltaic attributes of a dual antiref... more This research investigates the optical, structural, and photovoltaic attributes of a dual antireflection (AR) layer deposition on crystalline silicon (c–Si) solar cells using second SiO2 layer on SiNx AR. The second SiO2 AR layer on a SiNx AR-based c–Si solar cell was fabricated utilizing both spin coating and brush painting techniques, resulting in a unique double (SiO2/SiNx) AR layer. The initial SiNx AR layer was deposited on the c–Si solar cell through plasma-enhanced chemical vapor deposition (PECVD), while the SiO2 layer was subsequently applied using two different methods such as spin coating at 5000 rpm for 20 s and brush painting, separately, on Si solar cell. The double (SiO2/SiNx) AR layer on the Si wafer exhibited a substantial reduction in average reflectance, approximately 6.02% through spin coating and 5.17% through brush painting, within the wavelength range of 400–1000 nm when compared to a textured silicon wafer. The fabricated solar cell featuring the double (SiO2/SiNx) AR layer, achieved a power conversion efficiency of 15.21% and 17.57% for spin coating and brush painting, respectively. The utilization of the double (SiO2/SiNx) AR layer through brush painting on the Si solar cell not only provided low reflectance but also demonstrated excellent surface properties, making it a promising candidate for the cost-effective fabrication of high-performance Si solar cells.
Material today: Proceedings , 2022
This paper reports the optimization of zinc selenide as a window layer for GaAs solar cells in te... more This paper reports the optimization of zinc selenide as a window layer for GaAs solar cells in terms of
thickness, carrier concentration, and bandgap of the material. Zinc selenide has been chosen for the window
layer for appropriate front surface combination with absorber layer for the best performance in GaAs
solar cell. The characteristics like current-power curve and efficiency have been analyzed by the PC1D
modeling tool by varying different parameters like thickness, carrier concentration, and bandgap of window
layer. The short-circuit current of 3.2 A, open-circuit voltage of 0.871 V, and the highest power conversion
efficiency of 24.55% of solar cell has been observed at the thickness of 50 nm of the window layer.
The electron and hole densities have been observed 1.1 1016 cm3 and 1 1015 cm3 respectively at
distance from front in the range from 0 lm to 5 lm. The highest power conversion efficiency of
24.26% has been achieved at carrier concentration 1 1016 cm3, which confirms that the proposed
GaAs solar cell could be highly efficient to fabricate commercially at low a cost.
Science of advanced materials , 2024
This research investigates the optical, structural, and photovoltaic attributes of a dual antiref... more This research investigates the optical, structural, and photovoltaic attributes of a dual antireflection (AR) layer deposition on crystalline silicon (c–Si) solar cells using second SiO2 layer on SiNx AR. The second SiO2 AR layer on a SiNx AR-based c–Si solar cell was fabricated utilizing both spin coating and brush painting techniques, resulting in a unique double (SiO2/SiNx) AR layer. The initial SiNx AR layer was deposited on the c–Si solar cell through plasma-enhanced chemical vapor deposition (PECVD), while the SiO2 layer was subsequently applied using two different methods such as spin coating at 5000 rpm for 20 s and brush painting, separately, on Si solar cell. The double (SiO2/SiNx) AR layer on the Si wafer exhibited a substantial reduction in average reflectance, approximately 6.02% through spin coating and 5.17% through brush painting, within the wavelength range of 400–1000 nm when compared to a textured silicon wafer. The fabricated solar cell featuring the double (SiO2/SiNx) AR layer, achieved a power conversion efficiency of 15.21% and 17.57% for spin coating and brush painting, respectively. The utilization of the double (SiO2/SiNx) AR layer through brush painting on the Si solar cell not only provided low reflectance but also demonstrated excellent surface properties, making it a promising candidate for the cost-effective fabrication of high-performance Si solar cells.
Science of Advanced Materials, 2024
This research investigates the optical, structural, and photovoltaic attributes of a dual antiref... more This research investigates the optical, structural, and photovoltaic attributes of a dual antireflection (AR) layer deposition on crystalline silicon (c–Si) solar cells using second SiO2 layer on SiNx AR. The second SiO2 AR layer on a SiNx AR-based c–Si solar cell was fabricated utilizing both spin coating and brush painting techniques, resulting in a unique double (SiO2/SiNx) AR layer. The initial SiNx AR layer was deposited on the c–Si solar cell through plasma-enhanced chemical vapor deposition (PECVD), while the SiO2 layer was subsequently applied using two different methods such as spin coating at 5000 rpm for 20 s and brush painting, separately, on Si solar cell. The double (SiO2/SiNx) AR layer on the Si wafer exhibited a substantial reduction in average reflectance, approximately 6.02% through spin coating and 5.17% through brush painting, within the wavelength range of 400–1000 nm when compared to a textured silicon wafer. The fabricated solar cell featuring the double (SiO2/SiNx) AR layer, achieved a power conversion efficiency of 15.21% and 17.57% for spin coating and brush painting, respectively. The utilization of the double (SiO2/SiNx) AR layer through brush painting on the Si solar cell not only provided low reflectance but also demonstrated excellent surface properties, making it a promising candidate for the cost-effective fabrication of high-performance Si solar cells.
Journal of Materials Science: Materials in Electronics, 2023
Copper zinc tin sulfide solar cell (CZTS), Cu2ZnSnS4-based solar cells have shown promising conve... more Copper zinc tin sulfide solar cell (CZTS), Cu2ZnSnS4-based solar cells have shown promising conversion efficiency because of their ease of variation in configurations. In this work, the architecture of a ZnO–Al/i–ZnO/n–CdS/CZTS/Mo solar cell was optimized by using Silvaco Atlas simulation software. In this simulation study, the thickness and defect density of the CZTS layer has been varied to achieve the highest efficiency of 26.58%, with Isc = 36.64 A and Voc = 0.909 V at a defect density of 1.8 × 1012 cm−3. Increase in the layer thickness of CZTS improves the photon absorption and cell efficiency. This study has evidenced the impact of defect density on the absorber layer, including photo-generation rate, recombination rate, and solar cell efficiency. By optimizing the device parameters, it has achieved a fill factor of 79.74% under AM 1.5 illumination, demonstrating the potential for low-cost, highly efficient CZTS solar cells.
Scientific Reports
In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe hetero... more In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 = − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm i...
Journal of Materials Science: Materials in Electronics, 2023
Copper zinc tin sulfide solar cell (CZTS), Cu2ZnSnS4-based solar cells have shown promising conve... more Copper zinc tin sulfide solar cell (CZTS), Cu2ZnSnS4-based solar cells have shown promising conversion efficiency because of their ease of variation in configurations. In this work, the architecture of a ZnO–Al/i–ZnO/n–CdS/CZTS/Mo solar cell was optimized by using Silvaco Atlas simulation software. In this simulation study, the thickness and defect density of the CZTS layer has been varied to achieve the highest efficiency of 26.58%, with Isc = 36.64 A and Voc = 0.909 V at a defect density of 1.8 × 1012 cm−3. Increase in the layer thickness of CZTS improves the photon absorption and cell efficiency. This study has evidenced the impact of defect density on the absorber layer, including photo-generation rate, recombination rate, and solar cell efficiency. By optimizing the device parameters, it has achieved a fill factor of 79.74% under AM 1.5 illumination, demonstrating the potential for low-cost, highly efficient CZTS solar cells.
Journal of Materials Science: Materials in Electronics, 2023
Copper zinc tin sulfide solar cell (CZTS), Cu2ZnSnS4-based solar cells have shown promising conve... more Copper zinc tin sulfide solar cell (CZTS), Cu2ZnSnS4-based solar cells have shown promising conversion efficiency because of their ease of variation in configurations. In this work, the architecture of a ZnO–Al/i–ZnO/n–CdS/CZTS/Mo solar cell was optimized by using Silvaco Atlas simulation software. In this simulation study, the thickness and defect density of the CZTS layer has been varied to achieve the highest efficiency of 26.58%, with Isc = 36.64 A and Voc = 0.909 V at a defect density of 1.8 × 1012 cm−3. Increase in the layer thickness of CZTS improves the photon absorption and cell efficiency. This study has evidenced the impact of defect density on the absorber layer, including photo-generation rate, recombination rate, and solar cell efficiency. By optimizing the device parameters, it has achieved a fill factor of 79.74% under AM 1.5 illumination, demonstrating the potential for low-cost, highly efficient CZTS solar cells.
Scientific Reports, 2023
In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe hetero... more In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 = − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm is interesting, unusual, and unconventional due to the combined effect of morphology and electronics on a macro-to-micro scale. The thin-film solar cell with the structure of ZnO/ZnSe/CdSe exhibited a high efficiency of 11.98% with short-circuit current (Isc) = 1.72 A, open-circuit voltage (Voc) = 0.81 V and fill factor (FF) = 90.8% at an optimized thickness of 2 μm absorber layer, 50 nm window layer, and 78 nm ARC layer. The EQE of solar cells has been observed at about 90% at a particular wavelength at 470 nm (visible light range). Around 12% of efficiency from such a thin-layered solar cell is highly applicable.
Scientific Reports, 2023
In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe hetero... more In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 = − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm is interesting, unusual, and unconventional due to the combined effect of morphology and electronics on a macro-to-micro scale. The thin-film solar cell with the structure of ZnO/ZnSe/CdSe exhibited a high efficiency of 11.98% with short-circuit current (Isc) = 1.72 A, open-circuit voltage (Voc) = 0.81 V and fill factor (FF) = 90.8% at an optimized thickness of 2 μm absorber layer, 50 nm window layer, and 78 nm ARC layer. The EQE of solar cells has been observed at about 90% at a particular wavelength at 470 nm (visible light range). Around 12% of efficiency from such a thin-layered solar cell is highly applicable.
Solar energy, 2022
This paper reports on the computational study to investigate the high-performance gallium arsenid... more This paper reports on the computational study to investigate the high-performance gallium arsenide (GaAs) solar cells based on the Al 2 O 3 antireflection coating (ARC) layer by optimizing the carrier lifetime, doping concentration, energy bandgap, thickness of window and absorber layers. In this simulation, the parameters like GaAs as an absorber layer, CdS as a window layer, and fixed thickness of the Al 2 O 3 ARC layer were selected for performing the personal computer one dimensional (PC1D) simulation. As compared to GaAs solar cell with no ARC layer, GaAs solar cell with Al 2 O 3 ARC layer (90 nm) presented the high power conversion efficiency (PCE) of 24.60% at absorber thickness 6 μm and 30 nm for window layer. The optimized values of carrier lifetime and doping concentration for high PCE were found to be 100 μs and 1 × 10 17 cm − 3 for both absorber and window layers, respectively. The V oc , PCE, and fill factor (FF) values gradually increased with the increase of carrier lifetime and doping concentration of the CdS window layer. At optimized parameters, the highest value of I sc = 3.11 A, V oc = 0.884 V and PCE = 24.60% were achieved by GaAs solar cells with Al 2 O 3 ARC layer. This study proves that optimization of CdS window layer through carrier lifetime, thickness, doping concentrations, and bandgap, etc. would make the crucial component to manufacture cost-effective, high-performance GaAs solar cells based on Al 2 O 3 ARC layer.
Scientific Reports, 2023
In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe hetero... more In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 = − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm is interesting, unusual, and unconventional due to the combined effect of morphology and electronics on a macro-to-micro scale. The thin-film solar cell with the structure of ZnO/ZnSe/CdSe exhibited a high efficiency of 11.98% with short-circuit current (Isc) = 1.72 A, open-circuit voltage (Voc) = 0.81 V and fill factor (FF) = 90.8% at an optimized thickness of 2 μm absorber layer, 50 nm window layer, and 78 nm ARC layer. The EQE of solar cells has been observed at about 90% at a particular wavelength at 470 nm (visible light range). Around 12% of efficiency from such a thin-layered solar cell is highly applicable.
Scientific Report, 2023
In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe hetero... more In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 = − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm is interesting, unusual, and unconventional due to the combined effect of morphology and electronics on a macro-to-micro scale. The thin-film solar cell with the structure of ZnO/ZnSe/CdSe exhibited a high efficiency of 11.98% with short-circuit current (Isc) = 1.72 A, open-circuit voltage (Voc) = 0.81 V and fill factor (FF) = 90.8% at an optimized thickness of 2 μm absorber layer, 50 nm window layer, and 78 nm ARC layer. The EQE of solar cells has been observed at about 90% at a particular wavelength at 470 nm (visible light range). Around 12% of efficiency from such a thin-layered solar cell is highly applicable.
Inorganics
Anti-reflective coating (ARC) layers on silicon (Si) solar cells usually play a vital role in the... more Anti-reflective coating (ARC) layers on silicon (Si) solar cells usually play a vital role in the amount of light absorbed into the cell and protect the device from environmental degradation. This paper reports on the thickness optimization of hafnium oxide (HfO2) as an ARC layer for high-performance Si solar cells with PC1D simulation analysis. The deposition of the HfO2 ARC layer on Si cells was carried out with a low-cost sol-gel process followed by spin coating. The thickness of the ARC layer was controlled by varying the spinning speed. The HfO2 ARC with a thickness of 70 nm possessed the lowest average reflectance of 6.33% by covering wavelengths ranging from 400–1000 nm. The different thicknesses of HfO2 ARC layers were used as input parameters in a simulation study to explore the photovoltaic characteristics of Si solar cells. The simulation findings showed that, at 70 nm thickness, Si solar cells had an exceptional external quantum efficiency (EQE) of 98% and a maximum powe...
Electrochem
The impact of doping concentration and thickness of n-InGaN and p-InGaN regions on the power conv... more The impact of doping concentration and thickness of n-InGaN and p-InGaN regions on the power conversion efficiency of single junction-based InGaN solar cells was studied by the Silvaco ATLAS simulation software. The doping concentration 5 × 1019 cm−3 and 1 × 1015 cm−3 were optimized for n-InGaN and p-InGaN regions, respectively. The thickness of 300 nm was optimized for both n-InGaN and p-InGaN regions. The highest efficiency of 22.17% with Jsc = 37.68 mA/cm2, Voc = 0.729 V, and FF = 80.61% was achieved at optimized values of doping concentration and thickness of n-InGaN and p-InGaN regions of InGaN solar cells. The simulation study shows the relevance of the Silvaco ATLAS simulation tool, as well as the optimization of doping concentration and thickness of n- and p-InGaN regions for solar cells, which would make the development of high-performance InGaN solar cells low-cost and efficient.
Journal of Advanced Research in Dynamical and Control Systems, 2020
Improving the overall performance of the PV cell can play crucial role to the total generated pho... more Improving the overall performance of the PV cell can play crucial role to the total generated photovoltaic power worldwide. An efficient window layer is essential to check the front surface recombination in the solar cell. In this paper, we explored InGaP window layer for GaAs solar cell and analyzed performance with the help of PC1D simulation software. For this, we have varied thickness and doping level of InGaP window layer and performance of the solar cell has been examined with the help of current-voltage (I-V) characteristics. We also reviewed the effect of temperature on the performance of the solar cell. It has been found that the short circuit current 3.192 A, open circuit voltage 0.8959 V and power conversion efficiency 25.78% of InGaP/GaAs solar cell at window layer thickness 30 nm with doping level 1.00E+17cm 3 .
Solar Energy, 2022
This paper reports on the computational study to investigate the high-performance gallium arsenid... more This paper reports on the computational study to investigate the high-performance gallium arsenide (GaAs) solar cells based on the Al 2 O 3 antireflection coating (ARC) layer by optimizing the carrier lifetime, doping concentration, energy bandgap, thickness of window and absorber layers. In this simulation, the parameters like GaAs as an absorber layer, CdS as a window layer, and fixed thickness of the Al 2 O 3 ARC layer were selected for performing the personal computer one dimensional (PC1D) simulation. As compared to GaAs solar cell with no ARC layer, GaAs solar cell with Al 2 O 3 ARC layer (90 nm) presented the high power conversion efficiency (PCE) of 24.60% at absorber thickness 6 μm and 30 nm for window layer. The optimized values of carrier lifetime and doping concentration for high PCE were found to be 100 μs and 1 × 10 17 cm − 3 for both absorber and window layers, respectively. The V oc , PCE, and fill factor (FF) values gradually increased with the increase of carrier lifetime and doping concentration of the CdS window layer. At optimized parameters, the highest value of I sc = 3.11 A, V oc = 0.884 V and PCE = 24.60% were achieved by GaAs solar cells with Al 2 O 3 ARC layer. This study proves that optimization of CdS window layer through carrier lifetime, thickness, doping concentrations, and bandgap, etc. would make the crucial component to manufacture cost-effective, high-performance GaAs solar cells based on Al 2 O 3 ARC layer.
Science of advanced materials, 2024
This research investigates the optical, structural, and photovoltaic attributes of a dual antiref... more This research investigates the optical, structural, and photovoltaic attributes of a dual antireflection (AR) layer deposition on crystalline silicon (c–Si) solar cells using second SiO2 layer on SiNx AR. The second SiO2 AR layer on a SiNx AR-based c–Si solar cell was fabricated utilizing both spin coating and brush painting techniques, resulting in a unique double (SiO2/SiNx) AR layer. The initial SiNx AR layer was deposited on the c–Si solar cell through plasma-enhanced chemical vapor deposition (PECVD), while the SiO2 layer was subsequently applied using two different methods such as spin coating at 5000 rpm for 20 s and brush painting, separately, on Si solar cell. The double (SiO2/SiNx) AR layer on the Si wafer exhibited a substantial reduction in average reflectance, approximately 6.02% through spin coating and 5.17% through brush painting, within the wavelength range of 400–1000 nm when compared to a textured silicon wafer. The fabricated solar cell featuring the double (SiO2/SiNx) AR layer, achieved a power conversion efficiency of 15.21% and 17.57% for spin coating and brush painting, respectively. The utilization of the double (SiO2/SiNx) AR layer through brush painting on the Si solar cell not only provided low reflectance but also demonstrated excellent surface properties, making it a promising candidate for the cost-effective fabrication of high-performance Si solar cells.
Material today: Proceedings , 2022
This paper reports the optimization of zinc selenide as a window layer for GaAs solar cells in te... more This paper reports the optimization of zinc selenide as a window layer for GaAs solar cells in terms of
thickness, carrier concentration, and bandgap of the material. Zinc selenide has been chosen for the window
layer for appropriate front surface combination with absorber layer for the best performance in GaAs
solar cell. The characteristics like current-power curve and efficiency have been analyzed by the PC1D
modeling tool by varying different parameters like thickness, carrier concentration, and bandgap of window
layer. The short-circuit current of 3.2 A, open-circuit voltage of 0.871 V, and the highest power conversion
efficiency of 24.55% of solar cell has been observed at the thickness of 50 nm of the window layer.
The electron and hole densities have been observed 1.1 1016 cm3 and 1 1015 cm3 respectively at
distance from front in the range from 0 lm to 5 lm. The highest power conversion efficiency of
24.26% has been achieved at carrier concentration 1 1016 cm3, which confirms that the proposed
GaAs solar cell could be highly efficient to fabricate commercially at low a cost.
Science of advanced materials , 2024
This research investigates the optical, structural, and photovoltaic attributes of a dual antiref... more This research investigates the optical, structural, and photovoltaic attributes of a dual antireflection (AR) layer deposition on crystalline silicon (c–Si) solar cells using second SiO2 layer on SiNx AR. The second SiO2 AR layer on a SiNx AR-based c–Si solar cell was fabricated utilizing both spin coating and brush painting techniques, resulting in a unique double (SiO2/SiNx) AR layer. The initial SiNx AR layer was deposited on the c–Si solar cell through plasma-enhanced chemical vapor deposition (PECVD), while the SiO2 layer was subsequently applied using two different methods such as spin coating at 5000 rpm for 20 s and brush painting, separately, on Si solar cell. The double (SiO2/SiNx) AR layer on the Si wafer exhibited a substantial reduction in average reflectance, approximately 6.02% through spin coating and 5.17% through brush painting, within the wavelength range of 400–1000 nm when compared to a textured silicon wafer. The fabricated solar cell featuring the double (SiO2/SiNx) AR layer, achieved a power conversion efficiency of 15.21% and 17.57% for spin coating and brush painting, respectively. The utilization of the double (SiO2/SiNx) AR layer through brush painting on the Si solar cell not only provided low reflectance but also demonstrated excellent surface properties, making it a promising candidate for the cost-effective fabrication of high-performance Si solar cells.
Science of Advanced Materials, 2024
This research investigates the optical, structural, and photovoltaic attributes of a dual antiref... more This research investigates the optical, structural, and photovoltaic attributes of a dual antireflection (AR) layer deposition on crystalline silicon (c–Si) solar cells using second SiO2 layer on SiNx AR. The second SiO2 AR layer on a SiNx AR-based c–Si solar cell was fabricated utilizing both spin coating and brush painting techniques, resulting in a unique double (SiO2/SiNx) AR layer. The initial SiNx AR layer was deposited on the c–Si solar cell through plasma-enhanced chemical vapor deposition (PECVD), while the SiO2 layer was subsequently applied using two different methods such as spin coating at 5000 rpm for 20 s and brush painting, separately, on Si solar cell. The double (SiO2/SiNx) AR layer on the Si wafer exhibited a substantial reduction in average reflectance, approximately 6.02% through spin coating and 5.17% through brush painting, within the wavelength range of 400–1000 nm when compared to a textured silicon wafer. The fabricated solar cell featuring the double (SiO2/SiNx) AR layer, achieved a power conversion efficiency of 15.21% and 17.57% for spin coating and brush painting, respectively. The utilization of the double (SiO2/SiNx) AR layer through brush painting on the Si solar cell not only provided low reflectance but also demonstrated excellent surface properties, making it a promising candidate for the cost-effective fabrication of high-performance Si solar cells.
Journal of Materials Science: Materials in Electronics, 2023
Copper zinc tin sulfide solar cell (CZTS), Cu2ZnSnS4-based solar cells have shown promising conve... more Copper zinc tin sulfide solar cell (CZTS), Cu2ZnSnS4-based solar cells have shown promising conversion efficiency because of their ease of variation in configurations. In this work, the architecture of a ZnO–Al/i–ZnO/n–CdS/CZTS/Mo solar cell was optimized by using Silvaco Atlas simulation software. In this simulation study, the thickness and defect density of the CZTS layer has been varied to achieve the highest efficiency of 26.58%, with Isc = 36.64 A and Voc = 0.909 V at a defect density of 1.8 × 1012 cm−3. Increase in the layer thickness of CZTS improves the photon absorption and cell efficiency. This study has evidenced the impact of defect density on the absorber layer, including photo-generation rate, recombination rate, and solar cell efficiency. By optimizing the device parameters, it has achieved a fill factor of 79.74% under AM 1.5 illumination, demonstrating the potential for low-cost, highly efficient CZTS solar cells.
Scientific Reports
In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe hetero... more In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 = − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm i...
Journal of Materials Science: Materials in Electronics, 2023
Copper zinc tin sulfide solar cell (CZTS), Cu2ZnSnS4-based solar cells have shown promising conve... more Copper zinc tin sulfide solar cell (CZTS), Cu2ZnSnS4-based solar cells have shown promising conversion efficiency because of their ease of variation in configurations. In this work, the architecture of a ZnO–Al/i–ZnO/n–CdS/CZTS/Mo solar cell was optimized by using Silvaco Atlas simulation software. In this simulation study, the thickness and defect density of the CZTS layer has been varied to achieve the highest efficiency of 26.58%, with Isc = 36.64 A and Voc = 0.909 V at a defect density of 1.8 × 1012 cm−3. Increase in the layer thickness of CZTS improves the photon absorption and cell efficiency. This study has evidenced the impact of defect density on the absorber layer, including photo-generation rate, recombination rate, and solar cell efficiency. By optimizing the device parameters, it has achieved a fill factor of 79.74% under AM 1.5 illumination, demonstrating the potential for low-cost, highly efficient CZTS solar cells.
Journal of Materials Science: Materials in Electronics, 2023
Copper zinc tin sulfide solar cell (CZTS), Cu2ZnSnS4-based solar cells have shown promising conve... more Copper zinc tin sulfide solar cell (CZTS), Cu2ZnSnS4-based solar cells have shown promising conversion efficiency because of their ease of variation in configurations. In this work, the architecture of a ZnO–Al/i–ZnO/n–CdS/CZTS/Mo solar cell was optimized by using Silvaco Atlas simulation software. In this simulation study, the thickness and defect density of the CZTS layer has been varied to achieve the highest efficiency of 26.58%, with Isc = 36.64 A and Voc = 0.909 V at a defect density of 1.8 × 1012 cm−3. Increase in the layer thickness of CZTS improves the photon absorption and cell efficiency. This study has evidenced the impact of defect density on the absorber layer, including photo-generation rate, recombination rate, and solar cell efficiency. By optimizing the device parameters, it has achieved a fill factor of 79.74% under AM 1.5 illumination, demonstrating the potential for low-cost, highly efficient CZTS solar cells.
Scientific Reports, 2023
In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe hetero... more In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 = − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm is interesting, unusual, and unconventional due to the combined effect of morphology and electronics on a macro-to-micro scale. The thin-film solar cell with the structure of ZnO/ZnSe/CdSe exhibited a high efficiency of 11.98% with short-circuit current (Isc) = 1.72 A, open-circuit voltage (Voc) = 0.81 V and fill factor (FF) = 90.8% at an optimized thickness of 2 μm absorber layer, 50 nm window layer, and 78 nm ARC layer. The EQE of solar cells has been observed at about 90% at a particular wavelength at 470 nm (visible light range). Around 12% of efficiency from such a thin-layered solar cell is highly applicable.
Scientific Reports, 2023
In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe hetero... more In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 = − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm is interesting, unusual, and unconventional due to the combined effect of morphology and electronics on a macro-to-micro scale. The thin-film solar cell with the structure of ZnO/ZnSe/CdSe exhibited a high efficiency of 11.98% with short-circuit current (Isc) = 1.72 A, open-circuit voltage (Voc) = 0.81 V and fill factor (FF) = 90.8% at an optimized thickness of 2 μm absorber layer, 50 nm window layer, and 78 nm ARC layer. The EQE of solar cells has been observed at about 90% at a particular wavelength at 470 nm (visible light range). Around 12% of efficiency from such a thin-layered solar cell is highly applicable.
Solar energy, 2022
This paper reports on the computational study to investigate the high-performance gallium arsenid... more This paper reports on the computational study to investigate the high-performance gallium arsenide (GaAs) solar cells based on the Al 2 O 3 antireflection coating (ARC) layer by optimizing the carrier lifetime, doping concentration, energy bandgap, thickness of window and absorber layers. In this simulation, the parameters like GaAs as an absorber layer, CdS as a window layer, and fixed thickness of the Al 2 O 3 ARC layer were selected for performing the personal computer one dimensional (PC1D) simulation. As compared to GaAs solar cell with no ARC layer, GaAs solar cell with Al 2 O 3 ARC layer (90 nm) presented the high power conversion efficiency (PCE) of 24.60% at absorber thickness 6 μm and 30 nm for window layer. The optimized values of carrier lifetime and doping concentration for high PCE were found to be 100 μs and 1 × 10 17 cm − 3 for both absorber and window layers, respectively. The V oc , PCE, and fill factor (FF) values gradually increased with the increase of carrier lifetime and doping concentration of the CdS window layer. At optimized parameters, the highest value of I sc = 3.11 A, V oc = 0.884 V and PCE = 24.60% were achieved by GaAs solar cells with Al 2 O 3 ARC layer. This study proves that optimization of CdS window layer through carrier lifetime, thickness, doping concentrations, and bandgap, etc. would make the crucial component to manufacture cost-effective, high-performance GaAs solar cells based on Al 2 O 3 ARC layer.
Scientific Reports, 2023
In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe hetero... more In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 = − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm is interesting, unusual, and unconventional due to the combined effect of morphology and electronics on a macro-to-micro scale. The thin-film solar cell with the structure of ZnO/ZnSe/CdSe exhibited a high efficiency of 11.98% with short-circuit current (Isc) = 1.72 A, open-circuit voltage (Voc) = 0.81 V and fill factor (FF) = 90.8% at an optimized thickness of 2 μm absorber layer, 50 nm window layer, and 78 nm ARC layer. The EQE of solar cells has been observed at about 90% at a particular wavelength at 470 nm (visible light range). Around 12% of efficiency from such a thin-layered solar cell is highly applicable.
Scientific Report, 2023
In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe hetero... more In this work, a numerical assessment of the optoelectrical properties of the ZnO–ZnSe–CdSe heterojunction for a thin and cost-effective solar cell was made by using the PC1D simulation software. The photovoltaic (PV) properties have been optimized by varying thicknesses of the absorber layer of the p-CdSe layer, the window layer of n-ZnSe, and the antireflection coating (ARC) layer of ZnO, a transparent conductive oxide with enhanced light trapping, and wide bandgap engineering. There is a positive conduction band offset (CBO) of ΔEc = 0.25 eV and a negative valence band offset (VBO) of ΔEv = 1.2 − 2.16 = − 0.96 eV. The positive CBO prevents the flow of electrons from the CdSe to the ZnSe layer. Further, the impact of doping concentration on the performance of solar cells has been analyzed. The simulation results reveal the increase in the efficiency of solar cells by adding an ARC. The rapid and sharp increase in the efficiency with the thickness of the window layer beyond 80 nm is interesting, unusual, and unconventional due to the combined effect of morphology and electronics on a macro-to-micro scale. The thin-film solar cell with the structure of ZnO/ZnSe/CdSe exhibited a high efficiency of 11.98% with short-circuit current (Isc) = 1.72 A, open-circuit voltage (Voc) = 0.81 V and fill factor (FF) = 90.8% at an optimized thickness of 2 μm absorber layer, 50 nm window layer, and 78 nm ARC layer. The EQE of solar cells has been observed at about 90% at a particular wavelength at 470 nm (visible light range). Around 12% of efficiency from such a thin-layered solar cell is highly applicable.
Inorganics
Anti-reflective coating (ARC) layers on silicon (Si) solar cells usually play a vital role in the... more Anti-reflective coating (ARC) layers on silicon (Si) solar cells usually play a vital role in the amount of light absorbed into the cell and protect the device from environmental degradation. This paper reports on the thickness optimization of hafnium oxide (HfO2) as an ARC layer for high-performance Si solar cells with PC1D simulation analysis. The deposition of the HfO2 ARC layer on Si cells was carried out with a low-cost sol-gel process followed by spin coating. The thickness of the ARC layer was controlled by varying the spinning speed. The HfO2 ARC with a thickness of 70 nm possessed the lowest average reflectance of 6.33% by covering wavelengths ranging from 400–1000 nm. The different thicknesses of HfO2 ARC layers were used as input parameters in a simulation study to explore the photovoltaic characteristics of Si solar cells. The simulation findings showed that, at 70 nm thickness, Si solar cells had an exceptional external quantum efficiency (EQE) of 98% and a maximum powe...
Electrochem
The impact of doping concentration and thickness of n-InGaN and p-InGaN regions on the power conv... more The impact of doping concentration and thickness of n-InGaN and p-InGaN regions on the power conversion efficiency of single junction-based InGaN solar cells was studied by the Silvaco ATLAS simulation software. The doping concentration 5 × 1019 cm−3 and 1 × 1015 cm−3 were optimized for n-InGaN and p-InGaN regions, respectively. The thickness of 300 nm was optimized for both n-InGaN and p-InGaN regions. The highest efficiency of 22.17% with Jsc = 37.68 mA/cm2, Voc = 0.729 V, and FF = 80.61% was achieved at optimized values of doping concentration and thickness of n-InGaN and p-InGaN regions of InGaN solar cells. The simulation study shows the relevance of the Silvaco ATLAS simulation tool, as well as the optimization of doping concentration and thickness of n- and p-InGaN regions for solar cells, which would make the development of high-performance InGaN solar cells low-cost and efficient.
Journal of Advanced Research in Dynamical and Control Systems, 2020
Improving the overall performance of the PV cell can play crucial role to the total generated pho... more Improving the overall performance of the PV cell can play crucial role to the total generated photovoltaic power worldwide. An efficient window layer is essential to check the front surface recombination in the solar cell. In this paper, we explored InGaP window layer for GaAs solar cell and analyzed performance with the help of PC1D simulation software. For this, we have varied thickness and doping level of InGaP window layer and performance of the solar cell has been examined with the help of current-voltage (I-V) characteristics. We also reviewed the effect of temperature on the performance of the solar cell. It has been found that the short circuit current 3.192 A, open circuit voltage 0.8959 V and power conversion efficiency 25.78% of InGaP/GaAs solar cell at window layer thickness 30 nm with doping level 1.00E+17cm 3 .
Solar Energy, 2022
This paper reports on the computational study to investigate the high-performance gallium arsenid... more This paper reports on the computational study to investigate the high-performance gallium arsenide (GaAs) solar cells based on the Al 2 O 3 antireflection coating (ARC) layer by optimizing the carrier lifetime, doping concentration, energy bandgap, thickness of window and absorber layers. In this simulation, the parameters like GaAs as an absorber layer, CdS as a window layer, and fixed thickness of the Al 2 O 3 ARC layer were selected for performing the personal computer one dimensional (PC1D) simulation. As compared to GaAs solar cell with no ARC layer, GaAs solar cell with Al 2 O 3 ARC layer (90 nm) presented the high power conversion efficiency (PCE) of 24.60% at absorber thickness 6 μm and 30 nm for window layer. The optimized values of carrier lifetime and doping concentration for high PCE were found to be 100 μs and 1 × 10 17 cm − 3 for both absorber and window layers, respectively. The V oc , PCE, and fill factor (FF) values gradually increased with the increase of carrier lifetime and doping concentration of the CdS window layer. At optimized parameters, the highest value of I sc = 3.11 A, V oc = 0.884 V and PCE = 24.60% were achieved by GaAs solar cells with Al 2 O 3 ARC layer. This study proves that optimization of CdS window layer through carrier lifetime, thickness, doping concentrations, and bandgap, etc. would make the crucial component to manufacture cost-effective, high-performance GaAs solar cells based on Al 2 O 3 ARC layer.