Eugenio Cinquanta | Consiglio Nazionale delle Ricerche (CNR) (original) (raw)
Papers by Eugenio Cinquanta
Physical Review Letters
We study the nature of photo-excited charge carriers in CsPbBr3 nanocrystal thin films by ultrafa... more We study the nature of photo-excited charge carriers in CsPbBr3 nanocrystal thin films by ultrafast optical pump-THz probe spectroscopy. We observe a deviation from a pure Drude dispersion of the THz dielectric response that is ascribed to the polaronic nature of carriers; a transient blueshift of observed phonon frequencies is indicative of the coupling between photogenerated charges and stretching-bending modes of the deformed inorganic sublattice, as confirmed by DFT calculations.
Applied Surface Science, 2014
The electronic and vibrational properties of three different reconstructions of silicene on Ag(1 ... more The electronic and vibrational properties of three different reconstructions of silicene on Ag(1 1 1) are calculated and compared to experimental results. The 2D epitaxial silicon layers, namely the (4 × 4), ( √ 13 × √ 13) and (2 √ 3 × 2 √ 3) phases, exhibit different electronic and vibrational properties. Few peaks in the experimental Raman spectrum are identified and attributed to the vibrational modes of the silicene layers. The position and behavior of the Raman peaks with respect to the excitation energy are shown to be a fundamental tool to investigate and discern different phases of silicene on Ag(1 1 1).
Applied Surface Science, 2014
ABSTRACT Silicene and germanene are the silicon and germanium counterparts of graphene, respectiv... more ABSTRACT Silicene and germanene are the silicon and germanium counterparts of graphene, respectively. Recent experimental works have reported the growth of silicene on (1 1 1)Ag surfaces with different atomic configurations, depending on the growth temperature and surface coverage. We first theoretically study the structural and electronic properties of silicene on (1 1 1)Ag surfaces, focusing on the (4 × 4)silicene/Ag structure. Due to symmetry breaking in the silicene layer (nonequivalent number of top and bottom Si atoms), the corrugated silicene layer, with the Ag substrate removed, is predicted to be semiconducting, with a computed energy bandgap of about 0.3 eV. However, the hybridization between the Si 3p orbitals and the Ag 5s orbital in the silicene/(1 1 1)Ag slab model leads to an overall metallic system, with a distribution of local electronic density of states, which is related to the slightly disordered structure of the silicene layer on the (1 1 1)Ag surface. We next study the interaction of silicene and germanene with different hexagonal non-metallic substrates, namely ZnS and ZnSe. On reconstructed (0 0 0 1)ZnS or ZnSe surfaces, which should be more energetically stable for very thin layers, silicene and germanene are found to be semiconducting. Remarkably, the nature and magnitude of their energy bandgap can be controlled by an out-of-plane electric field, an important finding for the potential use of these materials in nanoelectronic devices.
as the presence of a bandgap allows for an effective charge commutation and hence for logic and o... more as the presence of a bandgap allows for an effective charge commutation and hence for logic and optoelectronic operations. MoS 2 is also highly appealing for low-power and flexible electronics and, despite the relatively low mobility and still open issues on its contact resistance, the reduced short-channel effects and the alleviated band-to-band tunneling at the metal junctions make it a viable option for ultimately scaled transistors with promising perspectives for the next technological nodes in the semiconductor roadmap. On top of these technology drivers, a wide number of physical properties can also be accessed by taking benefit from the concomitant twodimensional (2D) and semiconducting character of MoS 2 . Among them is the possibility to optically tune the spin and valley index polarization of carriers aiming at the realization of so-called spin-valleytronics and the observation of a gate tunable metal-insulator transition (MIT) in monolayer and few layer MoS 2 . The latter phenomenon is associated with the strong electronic correlation occurring at the 2D level in mechanically exfoliated MoS 2 where the carrier population is n-type and can be tuned via gate bias control. Despite the highly effective charge modulation and incipient attempts to tune the doping inside MoS 2 , it is not fully clear what is the physical origin of its intrinsic doping and how to induce or manipulate it. Elucidating this aspect not only may help understanding fundamental electronic features and correlate them with the physical constitution of the MoS 2 crystals, but it can also be used to modulate doping in MoS 2 down to the 2D limit.
Large-scale integration of MoS 2 in electronic devices requires the development of reliable and c... more Large-scale integration of MoS 2 in electronic devices requires the development of reliable and cost-effective deposition processes, leading to uniform MoS 2 layers on a wafer scale. Here we report on the detailed study of the heterogeneous vapor-solid reaction between a pre-deposited molybdenum solid film and sulfur vapor, thus resulting in a controlled growth of MoS 2 films onto SiO 2 /Si substrates with a tunable thickness and cm 2 -scale uniformity. Based on Raman spectroscopy and photoluminescence, we show that the degree of crystallinity in the MoS 2 layers is dictated by the deposition temperature and thickness. In particular, the MoS 2 structural disorder observed at low temperature (<750°C) and low thickness (two layers) evolves to a more ordered crystalline structure at high temperature (1000°C) and high thickness (four layers). From an atomic force microscopy investigation prior to and after sulfurization, this parametrical dependence is associated with the inherent granularity of the MoS 2 nanosheet that is inherited by the pristine morphology of the pre-deposited Mo film. This work paves the way to a closer control of the synthesis of wafer-scale and atomically thin MoS 2 , potentially extendable to other transition metal dichalcogenides and hence targeting massive and high-volume production for electronic device manufacturing.
lead to a nontrivial electronic coupling at the Si/MoS 2 heterosheet (HS) interface with possible... more lead to a nontrivial electronic coupling at the Si/MoS 2 heterosheet (HS) interface with possible impact on the electronic and optical applications. Indeed, interfacing MoS 2 with conventional semiconductors recently has recently led to the realization of a subthermionic tunnel FET, and it was proposed as a feasible avenue for an improved photodetection and enhanced photoresponsive behavior. In the present work, our aim is to unravel the electronic band line-up at the HS interface between Si and MoS 2 , and to correlate it with the electrical response of the resultant HS-FET after stabilizing the Si NS with an Al 2 O 3 encapsulation layer. To this purpose, in situ angle-resolved photoemission spectroscopy (ARPES) from a synchrotron radiation (SR) source (photon energy hν = 100 eV) and in situ nonmonochromatic laboratory X-ray photoemission spectroscopy (XPS) from a Mg Kα (photon energy hν = 1253.6 eV) source were respectively used to inspect the valence band structure at the Si/MoS 2 HS interface and the chemical stability prior to and after encapsulation. In particular, based on highresolution SR-PES, the Si NS is observed to bend the electronic bands of the MoS 2 topmost layers enough to cause an electron accumulation at the Si/MoS 2 HS interface. This feature deeply influences the HS-FET response by inducing an effective n-type doping in the topmost MoS 2 region.
The structural and electronic properties of nanoscale Si epitaxially grown on Ag(111) can be tune... more The structural and electronic properties of nanoscale Si epitaxially grown on Ag(111) can be tuned from a multilayer silicene phase, where the constitutive layers incorporate a mixed sp 2 /sp 3 bonding, to other ordinary Si phases, such as amorphous and diamond-like Si. Based on comparative scanning tunneling microscopy and Raman spectroscopy investigations, a key role in determining the nanoscale Si phase is played by the growth temperature of the epitaxial deposition on Ag(111) substrate and the presence or absence of a single-layer silicene as a seed for the successive growth. Furthermore, when integrated into a field-effect transistor device, multilayer silicene exhibits a characteristic ambipolar charge carrier transport behavior that makes it strikingly different from other conventional Si channels and suggestive of a Dirac-like character of the electronic bands of the crystal. These findings spotlight the interest in multilayer silicene as a different nanoscale Si phase for advanced nanotechnology applications such as ultrascaled nanoelectronics and nanomembranes, as well as for fundamental exploration of quantum properties.
Journal of Physics: Condensed Matter, 2015
Silicene grown on Ag(1 1 1) is characterized by several critical parameters. Among them, the subs... more Silicene grown on Ag(1 1 1) is characterized by several critical parameters. Among them, the substrate temperature plays a key role in determining the morphology during growth. However, an unexpected important role is also equally played by the post-deposition annealing temperature which determines the self-organization of silicene domains even in the submonolayer coverage regime and consecutive transitions between silicene with different periodicity. These temperature-driven phase transitions can be exploited to select the desired majority silicene phase, thus allowing for the manipulation of silicene properties.
2D Materials, 2014
ABSTRACT By using first-principles simulations, we investigate the interaction of a 2D silicon la... more ABSTRACT By using first-principles simulations, we investigate the interaction of a 2D silicon layer with two classes of chalcogenide-layered compounds, namely MoX2 and GaX (X = S, Se, Te). A rather weak (van der Waals) interaction between the silicene layers and the chalcogenide layers is predicted. We found that the buckling of the silicene layer is correlated to the lattice mismatch between the silicene layer and the MoX2 or GaX template. The electronic properties of silicene on these different templates largely depend on the buckling of the silicene layer: highly buckled silicene on MoS2 is predicted to be metallic, while low buckled silicene on GaS and GaSe is predicted to be semi-metallic, with preserved Dirac cones at the K points. These results indicate new routes for artificially engineering silicene nanosheets, providing tailored electronic properties of this 2D layer on non-metallic substrates. These non-metallic templates also open the way to the possible integration of silicene in future nanoelectronic devices.
ECS Transactions, 2013
ABSTRACT The silicon counterpart of graphene, the so called “silicene”, has been so far a fascina... more ABSTRACT The silicon counterpart of graphene, the so called “silicene”, has been so far a fascinating theoretical hypothesis, but only recent efforts have pushed it to concrete evidence thus triggering a tremendous interest in silicene for electronic applications and fundamental investigations. Indeed, in addition to graphene, silicene is expected to provide an intimate affinity with the Sibased technology but, unlike graphene, the silicene appears as a buckled lattice where various superstructures take place depending on the periodic distribution of buckled bonds. Here we elucidate the atomistic details of the 4x4 and √13 × √13 silicene superstructures epitaxially grown on Ag(111) substrates. These silicene layers have been successfully encapsulated with Al2O3 in order to access ex situ Raman spectroscopy. The Raman spectrum of the encapsulated silicene has been self-consistently interpreted upon comparison with ab initio calculated spectra. In addition to the presence of the double degenerate E2g mod
Nature nanotechnology, Jan 2, 2015
Free-standing silicene, a silicon analogue of graphene, has a buckled honeycomb lattice and, beca... more Free-standing silicene, a silicon analogue of graphene, has a buckled honeycomb lattice and, because of its Dirac bandstructure combined with its sensitive surface, offers the potential for a widely tunable two-dimensional monolayer, where external fields and interface interactions can be exploited to influence fundamental properties such as bandgap and band character for future nanoelectronic devices. The quantum spin Hall effect, chiral superconductivity, giant magnetoresistance and various exotic field-dependent states have been predicted in monolayer silicene. Despite recent progress regarding the epitaxial synthesis of silicene and investigation of its electronic properties, to date there has been no report of experimental silicene devices because of its air stability issue. Here, we report a silicene field-effect transistor, corroborating theoretical expectations regarding its ambipolar Dirac charge transport, with a measured room-temperature mobility of ∼100 cm(2) V(-1) s(-1)...
Ab-initio calculations within Density Functional Theory combined with experimental Raman spectra ... more Ab-initio calculations within Density Functional Theory combined with experimental Raman spectra on cluster-beam deposited pure carbon films provide a consistent picture of sp-carbon chains stabilized by sp 3 or sp 2 terminations, the latter being sensitive to torsional strain. This unexplored effect promises many exciting applications since it allows one to modify the conductive states near the Fermi level and to switch on and off the on-chain π-electron magnetism.
19th International Conference on Ultrafast Phenomena, 2014
ABSTRACT Ultrafast transient reflectivity measurements were performed in epitaxial 4x4 silicene g... more ABSTRACT Ultrafast transient reflectivity measurements were performed in epitaxial 4x4 silicene grown on Ag(111). Comparison with bulk silicon and silver response highlighted the occurrence of peculiar photo-physical mechanisms, suggesting a metallic-like behavior in silicene.
Carbon Materials: Chemistry and Physics, 2010
... of Schwarzite Physics Giorgio Benedek, Marco Bernasconi, Eugenio Cinquanta, Luca D&am... more ... of Schwarzite Physics Giorgio Benedek, Marco Bernasconi, Eugenio Cinquanta, Luca D&amp;amp;amp;amp;#x27;Alessio, and Marzio De Corato You see things and you say “Why?” But I dream things that never were and I say “Why not?” (George Bernard Shaw, Back to Mathusalem) ...
The Journal of Chemical Physics, 2014
We report and solidly interpret the infrared spectrum of both pristine and oxidized carbynes embe... more We report and solidly interpret the infrared spectrum of both pristine and oxidized carbynes embedded in a pure-carbon matrix. The spectra probe separately the effects of oxidation on sp- and on sp(2)-hybridized carbon, and provide information on the stability of the different structures in an oxidizing atmosphere. The final products are mostly short end-oxidized carbynes anchored with a double bond to sp(2) fragments, plus an oxidized sp(2) amorphous matrix. Our results have important implications for the realization of carbyne-based nano-electronics devices and highlight the active participation of carbynes in astrochemical reactions where they act as carbon source for the promotion of more complex organic species.
Physical Review Letters
We study the nature of photo-excited charge carriers in CsPbBr3 nanocrystal thin films by ultrafa... more We study the nature of photo-excited charge carriers in CsPbBr3 nanocrystal thin films by ultrafast optical pump-THz probe spectroscopy. We observe a deviation from a pure Drude dispersion of the THz dielectric response that is ascribed to the polaronic nature of carriers; a transient blueshift of observed phonon frequencies is indicative of the coupling between photogenerated charges and stretching-bending modes of the deformed inorganic sublattice, as confirmed by DFT calculations.
Applied Surface Science, 2014
The electronic and vibrational properties of three different reconstructions of silicene on Ag(1 ... more The electronic and vibrational properties of three different reconstructions of silicene on Ag(1 1 1) are calculated and compared to experimental results. The 2D epitaxial silicon layers, namely the (4 × 4), ( √ 13 × √ 13) and (2 √ 3 × 2 √ 3) phases, exhibit different electronic and vibrational properties. Few peaks in the experimental Raman spectrum are identified and attributed to the vibrational modes of the silicene layers. The position and behavior of the Raman peaks with respect to the excitation energy are shown to be a fundamental tool to investigate and discern different phases of silicene on Ag(1 1 1).
Applied Surface Science, 2014
ABSTRACT Silicene and germanene are the silicon and germanium counterparts of graphene, respectiv... more ABSTRACT Silicene and germanene are the silicon and germanium counterparts of graphene, respectively. Recent experimental works have reported the growth of silicene on (1 1 1)Ag surfaces with different atomic configurations, depending on the growth temperature and surface coverage. We first theoretically study the structural and electronic properties of silicene on (1 1 1)Ag surfaces, focusing on the (4 × 4)silicene/Ag structure. Due to symmetry breaking in the silicene layer (nonequivalent number of top and bottom Si atoms), the corrugated silicene layer, with the Ag substrate removed, is predicted to be semiconducting, with a computed energy bandgap of about 0.3 eV. However, the hybridization between the Si 3p orbitals and the Ag 5s orbital in the silicene/(1 1 1)Ag slab model leads to an overall metallic system, with a distribution of local electronic density of states, which is related to the slightly disordered structure of the silicene layer on the (1 1 1)Ag surface. We next study the interaction of silicene and germanene with different hexagonal non-metallic substrates, namely ZnS and ZnSe. On reconstructed (0 0 0 1)ZnS or ZnSe surfaces, which should be more energetically stable for very thin layers, silicene and germanene are found to be semiconducting. Remarkably, the nature and magnitude of their energy bandgap can be controlled by an out-of-plane electric field, an important finding for the potential use of these materials in nanoelectronic devices.
as the presence of a bandgap allows for an effective charge commutation and hence for logic and o... more as the presence of a bandgap allows for an effective charge commutation and hence for logic and optoelectronic operations. MoS 2 is also highly appealing for low-power and flexible electronics and, despite the relatively low mobility and still open issues on its contact resistance, the reduced short-channel effects and the alleviated band-to-band tunneling at the metal junctions make it a viable option for ultimately scaled transistors with promising perspectives for the next technological nodes in the semiconductor roadmap. On top of these technology drivers, a wide number of physical properties can also be accessed by taking benefit from the concomitant twodimensional (2D) and semiconducting character of MoS 2 . Among them is the possibility to optically tune the spin and valley index polarization of carriers aiming at the realization of so-called spin-valleytronics and the observation of a gate tunable metal-insulator transition (MIT) in monolayer and few layer MoS 2 . The latter phenomenon is associated with the strong electronic correlation occurring at the 2D level in mechanically exfoliated MoS 2 where the carrier population is n-type and can be tuned via gate bias control. Despite the highly effective charge modulation and incipient attempts to tune the doping inside MoS 2 , it is not fully clear what is the physical origin of its intrinsic doping and how to induce or manipulate it. Elucidating this aspect not only may help understanding fundamental electronic features and correlate them with the physical constitution of the MoS 2 crystals, but it can also be used to modulate doping in MoS 2 down to the 2D limit.
Large-scale integration of MoS 2 in electronic devices requires the development of reliable and c... more Large-scale integration of MoS 2 in electronic devices requires the development of reliable and cost-effective deposition processes, leading to uniform MoS 2 layers on a wafer scale. Here we report on the detailed study of the heterogeneous vapor-solid reaction between a pre-deposited molybdenum solid film and sulfur vapor, thus resulting in a controlled growth of MoS 2 films onto SiO 2 /Si substrates with a tunable thickness and cm 2 -scale uniformity. Based on Raman spectroscopy and photoluminescence, we show that the degree of crystallinity in the MoS 2 layers is dictated by the deposition temperature and thickness. In particular, the MoS 2 structural disorder observed at low temperature (<750°C) and low thickness (two layers) evolves to a more ordered crystalline structure at high temperature (1000°C) and high thickness (four layers). From an atomic force microscopy investigation prior to and after sulfurization, this parametrical dependence is associated with the inherent granularity of the MoS 2 nanosheet that is inherited by the pristine morphology of the pre-deposited Mo film. This work paves the way to a closer control of the synthesis of wafer-scale and atomically thin MoS 2 , potentially extendable to other transition metal dichalcogenides and hence targeting massive and high-volume production for electronic device manufacturing.
lead to a nontrivial electronic coupling at the Si/MoS 2 heterosheet (HS) interface with possible... more lead to a nontrivial electronic coupling at the Si/MoS 2 heterosheet (HS) interface with possible impact on the electronic and optical applications. Indeed, interfacing MoS 2 with conventional semiconductors recently has recently led to the realization of a subthermionic tunnel FET, and it was proposed as a feasible avenue for an improved photodetection and enhanced photoresponsive behavior. In the present work, our aim is to unravel the electronic band line-up at the HS interface between Si and MoS 2 , and to correlate it with the electrical response of the resultant HS-FET after stabilizing the Si NS with an Al 2 O 3 encapsulation layer. To this purpose, in situ angle-resolved photoemission spectroscopy (ARPES) from a synchrotron radiation (SR) source (photon energy hν = 100 eV) and in situ nonmonochromatic laboratory X-ray photoemission spectroscopy (XPS) from a Mg Kα (photon energy hν = 1253.6 eV) source were respectively used to inspect the valence band structure at the Si/MoS 2 HS interface and the chemical stability prior to and after encapsulation. In particular, based on highresolution SR-PES, the Si NS is observed to bend the electronic bands of the MoS 2 topmost layers enough to cause an electron accumulation at the Si/MoS 2 HS interface. This feature deeply influences the HS-FET response by inducing an effective n-type doping in the topmost MoS 2 region.
The structural and electronic properties of nanoscale Si epitaxially grown on Ag(111) can be tune... more The structural and electronic properties of nanoscale Si epitaxially grown on Ag(111) can be tuned from a multilayer silicene phase, where the constitutive layers incorporate a mixed sp 2 /sp 3 bonding, to other ordinary Si phases, such as amorphous and diamond-like Si. Based on comparative scanning tunneling microscopy and Raman spectroscopy investigations, a key role in determining the nanoscale Si phase is played by the growth temperature of the epitaxial deposition on Ag(111) substrate and the presence or absence of a single-layer silicene as a seed for the successive growth. Furthermore, when integrated into a field-effect transistor device, multilayer silicene exhibits a characteristic ambipolar charge carrier transport behavior that makes it strikingly different from other conventional Si channels and suggestive of a Dirac-like character of the electronic bands of the crystal. These findings spotlight the interest in multilayer silicene as a different nanoscale Si phase for advanced nanotechnology applications such as ultrascaled nanoelectronics and nanomembranes, as well as for fundamental exploration of quantum properties.
Journal of Physics: Condensed Matter, 2015
Silicene grown on Ag(1 1 1) is characterized by several critical parameters. Among them, the subs... more Silicene grown on Ag(1 1 1) is characterized by several critical parameters. Among them, the substrate temperature plays a key role in determining the morphology during growth. However, an unexpected important role is also equally played by the post-deposition annealing temperature which determines the self-organization of silicene domains even in the submonolayer coverage regime and consecutive transitions between silicene with different periodicity. These temperature-driven phase transitions can be exploited to select the desired majority silicene phase, thus allowing for the manipulation of silicene properties.
2D Materials, 2014
ABSTRACT By using first-principles simulations, we investigate the interaction of a 2D silicon la... more ABSTRACT By using first-principles simulations, we investigate the interaction of a 2D silicon layer with two classes of chalcogenide-layered compounds, namely MoX2 and GaX (X = S, Se, Te). A rather weak (van der Waals) interaction between the silicene layers and the chalcogenide layers is predicted. We found that the buckling of the silicene layer is correlated to the lattice mismatch between the silicene layer and the MoX2 or GaX template. The electronic properties of silicene on these different templates largely depend on the buckling of the silicene layer: highly buckled silicene on MoS2 is predicted to be metallic, while low buckled silicene on GaS and GaSe is predicted to be semi-metallic, with preserved Dirac cones at the K points. These results indicate new routes for artificially engineering silicene nanosheets, providing tailored electronic properties of this 2D layer on non-metallic substrates. These non-metallic templates also open the way to the possible integration of silicene in future nanoelectronic devices.
ECS Transactions, 2013
ABSTRACT The silicon counterpart of graphene, the so called “silicene”, has been so far a fascina... more ABSTRACT The silicon counterpart of graphene, the so called “silicene”, has been so far a fascinating theoretical hypothesis, but only recent efforts have pushed it to concrete evidence thus triggering a tremendous interest in silicene for electronic applications and fundamental investigations. Indeed, in addition to graphene, silicene is expected to provide an intimate affinity with the Sibased technology but, unlike graphene, the silicene appears as a buckled lattice where various superstructures take place depending on the periodic distribution of buckled bonds. Here we elucidate the atomistic details of the 4x4 and √13 × √13 silicene superstructures epitaxially grown on Ag(111) substrates. These silicene layers have been successfully encapsulated with Al2O3 in order to access ex situ Raman spectroscopy. The Raman spectrum of the encapsulated silicene has been self-consistently interpreted upon comparison with ab initio calculated spectra. In addition to the presence of the double degenerate E2g mod
Nature nanotechnology, Jan 2, 2015
Free-standing silicene, a silicon analogue of graphene, has a buckled honeycomb lattice and, beca... more Free-standing silicene, a silicon analogue of graphene, has a buckled honeycomb lattice and, because of its Dirac bandstructure combined with its sensitive surface, offers the potential for a widely tunable two-dimensional monolayer, where external fields and interface interactions can be exploited to influence fundamental properties such as bandgap and band character for future nanoelectronic devices. The quantum spin Hall effect, chiral superconductivity, giant magnetoresistance and various exotic field-dependent states have been predicted in monolayer silicene. Despite recent progress regarding the epitaxial synthesis of silicene and investigation of its electronic properties, to date there has been no report of experimental silicene devices because of its air stability issue. Here, we report a silicene field-effect transistor, corroborating theoretical expectations regarding its ambipolar Dirac charge transport, with a measured room-temperature mobility of ∼100 cm(2) V(-1) s(-1)...
Ab-initio calculations within Density Functional Theory combined with experimental Raman spectra ... more Ab-initio calculations within Density Functional Theory combined with experimental Raman spectra on cluster-beam deposited pure carbon films provide a consistent picture of sp-carbon chains stabilized by sp 3 or sp 2 terminations, the latter being sensitive to torsional strain. This unexplored effect promises many exciting applications since it allows one to modify the conductive states near the Fermi level and to switch on and off the on-chain π-electron magnetism.
19th International Conference on Ultrafast Phenomena, 2014
ABSTRACT Ultrafast transient reflectivity measurements were performed in epitaxial 4x4 silicene g... more ABSTRACT Ultrafast transient reflectivity measurements were performed in epitaxial 4x4 silicene grown on Ag(111). Comparison with bulk silicon and silver response highlighted the occurrence of peculiar photo-physical mechanisms, suggesting a metallic-like behavior in silicene.
Carbon Materials: Chemistry and Physics, 2010
... of Schwarzite Physics Giorgio Benedek, Marco Bernasconi, Eugenio Cinquanta, Luca D&am... more ... of Schwarzite Physics Giorgio Benedek, Marco Bernasconi, Eugenio Cinquanta, Luca D&amp;amp;amp;amp;#x27;Alessio, and Marzio De Corato You see things and you say “Why?” But I dream things that never were and I say “Why not?” (George Bernard Shaw, Back to Mathusalem) ...
The Journal of Chemical Physics, 2014
We report and solidly interpret the infrared spectrum of both pristine and oxidized carbynes embe... more We report and solidly interpret the infrared spectrum of both pristine and oxidized carbynes embedded in a pure-carbon matrix. The spectra probe separately the effects of oxidation on sp- and on sp(2)-hybridized carbon, and provide information on the stability of the different structures in an oxidizing atmosphere. The final products are mostly short end-oxidized carbynes anchored with a double bond to sp(2) fragments, plus an oxidized sp(2) amorphous matrix. Our results have important implications for the realization of carbyne-based nano-electronics devices and highlight the active participation of carbynes in astrochemical reactions where they act as carbon source for the promotion of more complex organic species.