J.R. Coudevylle | Centre National de la Recherche Scientifique / French National Centre for Scientific Research (original) (raw)

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Papers by J.R. Coudevylle

Research paper thumbnail of Conception de microrésonateurs à mode de Lamé

Research paper thumbnail of Innovative method to study irradiation damage in silicon pixel detectors for HEP: TLM

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019

Research paper thumbnail of An etched multilayer as a dispersive element in a curved-crystal spectrometer: implementation and performance

X-Ray Spectrometry, 2012

Etched multilayers obtained by forming a laminar grating pattern within interferential multilayer... more Etched multilayers obtained by forming a laminar grating pattern within interferential multilayer mirrors are used in the soft x-ray range to improve the spectral resolution of wavelength dispersive spectrometers equipped with periodic multilayers. We describe the fabrication process of such an etched multilayer dispersive element, its characterizationthrough reflectivity measurement and simulations, and its implementation in a high-resolution Johann-type spectrometer. The specially designed patterning of a Mo/B 4 C multilayer is found fruitful in the range of the C K emission as the diffraction pattern narrows by a factor 4 with respect to the non-etched structure.This dispersive element with an improved spectral resolution was successfully implemented for electronic structure study with an improved spectral resolution by x-ray emission spectroscopy. As first results we present the distinction between the chemical states of carbon atoms in various compounds, such as graphite, SiC and B 4 C, bythe different shape of their C K emission band.

Research paper thumbnail of Comparison of high Q microresonators operating on a thin plate mode: The lame-mode

The modern communications means use a wide range of frequencies to transmit, code or decrypt info... more The modern communications means use a wide range of frequencies to transmit, code or decrypt information. These tasks are usually performed via different micro-electro-mechanical system (MEMS). The aim of this paper is to present and compare different design of microresonators realized in single crystal silicon using Deep Reactive Ion Etching (DRIE) techniques. The devices are electrostatically driven and use a thin plate mechanical mode: the Lame-mode. This mode depends on the geometric dimensions of the vibrating plate and grants a high quality factor for each device. The characterization has been carried out under an optical test bench using a heterodyne laser probe. The results show a quality factor between 1000 to 4500 at 10.3 MHz in air.

Research paper thumbnail of Low power consumption Ge/SiGe Quantum well optical modulator

Asia Communications and Photonics Conference, 2012

ABSTRACT Ge/SiGe quantum well waveguide modulator is demonstrated, working with 1V bias swing, an... more ABSTRACT Ge/SiGe quantum well waveguide modulator is demonstrated, working with 1V bias swing, and energy consumption as low as 108 fJ per bit. The modulator shows a 3dB bandwidth of 23 GHz.

Research paper thumbnail of Design and test of new high-Q microresonators fabricated by UV-LIGA

SPIE Proceedings, 2001

We report in this paper the study of a new metallic microresonator realized by UV-LIGA technique.... more We report in this paper the study of a new metallic microresonator realized by UV-LIGA technique. This kind of device is excited electrostatically and takes advantage of the contour modes or Lame-modes of the structure. Design methods of such device are presented and simulated with a Finite Element Program. Details on the microfabrication process are also presented. The vibration modes

Research paper thumbnail of <title>Characteristics of a torsional resonator with two degrees of freedom fabricated by UV-LIGA</title>

Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002

ABSTRACT

Research paper thumbnail of 10-Gb/s Ge/SiGe Multiple Quantum-Well Waveguide Photodetector

IEEE Photonics Technology Letters, 2011

The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodete... more The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodetector. At , 10 Gb/s operation is demonstrated at wavelengths of 1405 and 1420 nm with a responsivity as high as 0.8 A/W. The device, 3 wide and 80 long, exhibits a dark current of 474 nA at a reverse bias of . These results pave the

Research paper thumbnail of Conception et réalisation d'un micro-système pour le contrôle de couche limite

... Ahsan, Tuaha, Shahbaz, Sheraz, Ali Anwar, Aurangzeb, Thao, Rahim, Shehla, Cheema, Kamel, Farh... more ... Ahsan, Tuaha, Shahbaz, Sheraz, Ali Anwar, Aurangzeb, Thao, Rahim, Shehla, Cheema, Kamel, Farhan, Aamer Khan, Rizvi, Faiz, Sohail, Hassan, Mirza, Kaku, Ghufran bhai, Aamer bhai, Mahwish bhabhi, Abdullah, Bushra, Kashif, Abdelhamid etc... ...

Research paper thumbnail of Design and Realization of a Microsystem for Boundary layer control

Research paper thumbnail of Modeling and Characterization of Lamé-mode Microresonators Realized by UV-LIGA

Transducers ’01 Eurosensors XV, 2001

ABSTRACT

Research paper thumbnail of Modeling and characterization of Lamé-mode microresonators realized by UV-LIGA

Research paper thumbnail of Simulation and Characterization of High Q Microresonators Fabricated by UV–LIGA

Research paper thumbnail of Limiting Factors to the Temperature Performance of THz Quantum Cascade Lasers Based on the Resonant-Phonon Depopulation Scheme

IEEE Transactions on Terahertz Science and Technology, 2012

We analyze the temperature performance of five terahertz (THz)-frequency quantum cascade lasers b... more We analyze the temperature performance of five terahertz (THz)-frequency quantum cascade lasers based on a three-quantum-well resonant-phonon depopulation design as a function of operating frequency in the 2.3–3.8-THz range. We find evidence that the device performance is limited by the interplay between two factors: 1) optical phonon scattering of thermal electrons, which dominates at shorter wavelengths, and 2) parasitic current,

Research paper thumbnail of <title>Microfabricated silicon array of microneedles: prediction of its behaviour during insertion through the skin</title>

BioMEMS and Nanotechnology II, 2005

Research paper thumbnail of 30 GHz Ge/SiGe multiple quantum well photodiode

Research paper thumbnail of High speed electro-absorption modulator based on quantum-confined stark effect from Ge/SiGe multiple quantum wells

Research paper thumbnail of High extinction ratio, low energy Ge quantum well electro-absorption modulator with 23 GHz bandwidth

Research paper thumbnail of Ge/SiGe multiple quantum well optoelectronic devices for silicon photonics

Despite being an indirect-gap semiconductor, Ge quantum wells (QWs) have demonstrated, based on i... more Despite being an indirect-gap semiconductor, Ge quantum wells (QWs) have demonstrated, based on its direct gap transition, a QCSE as strong as that of direct-gap III-V semiconductor QWs. In this context, this paper presents our latest experimental results on the light modulation, detection, and emission behaviors of Ge/SiGe MQWs within the telecommunication wavelength region. From the experiments, DC and RF

Research paper thumbnail of Ge quantum well electro-absorption modulator with 23 GHz bandwidth

ABSTRACT A 23 GHz Ge/SiGe multiple quantum well electro-absorption waveguide modulator is demonst... more ABSTRACT A 23 GHz Ge/SiGe multiple quantum well electro-absorption waveguide modulator is demonstrated with 10 dB extinction ratio (ER). 9 dB ER is achieved with 1V swing with energy consumption limited to 108 fJ per bit.

Research paper thumbnail of Conception de microrésonateurs à mode de Lamé

Research paper thumbnail of Innovative method to study irradiation damage in silicon pixel detectors for HEP: TLM

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019

Research paper thumbnail of An etched multilayer as a dispersive element in a curved-crystal spectrometer: implementation and performance

X-Ray Spectrometry, 2012

Etched multilayers obtained by forming a laminar grating pattern within interferential multilayer... more Etched multilayers obtained by forming a laminar grating pattern within interferential multilayer mirrors are used in the soft x-ray range to improve the spectral resolution of wavelength dispersive spectrometers equipped with periodic multilayers. We describe the fabrication process of such an etched multilayer dispersive element, its characterizationthrough reflectivity measurement and simulations, and its implementation in a high-resolution Johann-type spectrometer. The specially designed patterning of a Mo/B 4 C multilayer is found fruitful in the range of the C K emission as the diffraction pattern narrows by a factor 4 with respect to the non-etched structure.This dispersive element with an improved spectral resolution was successfully implemented for electronic structure study with an improved spectral resolution by x-ray emission spectroscopy. As first results we present the distinction between the chemical states of carbon atoms in various compounds, such as graphite, SiC and B 4 C, bythe different shape of their C K emission band.

Research paper thumbnail of Comparison of high Q microresonators operating on a thin plate mode: The lame-mode

The modern communications means use a wide range of frequencies to transmit, code or decrypt info... more The modern communications means use a wide range of frequencies to transmit, code or decrypt information. These tasks are usually performed via different micro-electro-mechanical system (MEMS). The aim of this paper is to present and compare different design of microresonators realized in single crystal silicon using Deep Reactive Ion Etching (DRIE) techniques. The devices are electrostatically driven and use a thin plate mechanical mode: the Lame-mode. This mode depends on the geometric dimensions of the vibrating plate and grants a high quality factor for each device. The characterization has been carried out under an optical test bench using a heterodyne laser probe. The results show a quality factor between 1000 to 4500 at 10.3 MHz in air.

Research paper thumbnail of Low power consumption Ge/SiGe Quantum well optical modulator

Asia Communications and Photonics Conference, 2012

ABSTRACT Ge/SiGe quantum well waveguide modulator is demonstrated, working with 1V bias swing, an... more ABSTRACT Ge/SiGe quantum well waveguide modulator is demonstrated, working with 1V bias swing, and energy consumption as low as 108 fJ per bit. The modulator shows a 3dB bandwidth of 23 GHz.

Research paper thumbnail of Design and test of new high-Q microresonators fabricated by UV-LIGA

SPIE Proceedings, 2001

We report in this paper the study of a new metallic microresonator realized by UV-LIGA technique.... more We report in this paper the study of a new metallic microresonator realized by UV-LIGA technique. This kind of device is excited electrostatically and takes advantage of the contour modes or Lame-modes of the structure. Design methods of such device are presented and simulated with a Finite Element Program. Details on the microfabrication process are also presented. The vibration modes

Research paper thumbnail of <title>Characteristics of a torsional resonator with two degrees of freedom fabricated by UV-LIGA</title>

Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002

ABSTRACT

Research paper thumbnail of 10-Gb/s Ge/SiGe Multiple Quantum-Well Waveguide Photodetector

IEEE Photonics Technology Letters, 2011

The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodete... more The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodetector. At , 10 Gb/s operation is demonstrated at wavelengths of 1405 and 1420 nm with a responsivity as high as 0.8 A/W. The device, 3 wide and 80 long, exhibits a dark current of 474 nA at a reverse bias of . These results pave the

Research paper thumbnail of Conception et réalisation d'un micro-système pour le contrôle de couche limite

... Ahsan, Tuaha, Shahbaz, Sheraz, Ali Anwar, Aurangzeb, Thao, Rahim, Shehla, Cheema, Kamel, Farh... more ... Ahsan, Tuaha, Shahbaz, Sheraz, Ali Anwar, Aurangzeb, Thao, Rahim, Shehla, Cheema, Kamel, Farhan, Aamer Khan, Rizvi, Faiz, Sohail, Hassan, Mirza, Kaku, Ghufran bhai, Aamer bhai, Mahwish bhabhi, Abdullah, Bushra, Kashif, Abdelhamid etc... ...

Research paper thumbnail of Design and Realization of a Microsystem for Boundary layer control

Research paper thumbnail of Modeling and Characterization of Lamé-mode Microresonators Realized by UV-LIGA

Transducers ’01 Eurosensors XV, 2001

ABSTRACT

Research paper thumbnail of Modeling and characterization of Lamé-mode microresonators realized by UV-LIGA

Research paper thumbnail of Simulation and Characterization of High Q Microresonators Fabricated by UV–LIGA

Research paper thumbnail of Limiting Factors to the Temperature Performance of THz Quantum Cascade Lasers Based on the Resonant-Phonon Depopulation Scheme

IEEE Transactions on Terahertz Science and Technology, 2012

We analyze the temperature performance of five terahertz (THz)-frequency quantum cascade lasers b... more We analyze the temperature performance of five terahertz (THz)-frequency quantum cascade lasers based on a three-quantum-well resonant-phonon depopulation design as a function of operating frequency in the 2.3–3.8-THz range. We find evidence that the device performance is limited by the interplay between two factors: 1) optical phonon scattering of thermal electrons, which dominates at shorter wavelengths, and 2) parasitic current,

Research paper thumbnail of <title>Microfabricated silicon array of microneedles: prediction of its behaviour during insertion through the skin</title>

BioMEMS and Nanotechnology II, 2005

Research paper thumbnail of 30 GHz Ge/SiGe multiple quantum well photodiode

Research paper thumbnail of High speed electro-absorption modulator based on quantum-confined stark effect from Ge/SiGe multiple quantum wells

Research paper thumbnail of High extinction ratio, low energy Ge quantum well electro-absorption modulator with 23 GHz bandwidth

Research paper thumbnail of Ge/SiGe multiple quantum well optoelectronic devices for silicon photonics

Despite being an indirect-gap semiconductor, Ge quantum wells (QWs) have demonstrated, based on i... more Despite being an indirect-gap semiconductor, Ge quantum wells (QWs) have demonstrated, based on its direct gap transition, a QCSE as strong as that of direct-gap III-V semiconductor QWs. In this context, this paper presents our latest experimental results on the light modulation, detection, and emission behaviors of Ge/SiGe MQWs within the telecommunication wavelength region. From the experiments, DC and RF

Research paper thumbnail of Ge quantum well electro-absorption modulator with 23 GHz bandwidth

ABSTRACT A 23 GHz Ge/SiGe multiple quantum well electro-absorption waveguide modulator is demonst... more ABSTRACT A 23 GHz Ge/SiGe multiple quantum well electro-absorption waveguide modulator is demonstrated with 10 dB extinction ratio (ER). 9 dB ER is achieved with 1V swing with energy consumption limited to 108 fJ per bit.