J.R. Coudevylle - Profile on Academia.edu (original) (raw)
Papers by J.R. Coudevylle
Conception de microrésonateurs à mode de Lamé
National audienc
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019
X-Ray Spectrometry, 2012
Etched multilayers obtained by forming a laminar grating pattern within interferential multilayer... more Etched multilayers obtained by forming a laminar grating pattern within interferential multilayer mirrors are used in the soft x-ray range to improve the spectral resolution of wavelength dispersive spectrometers equipped with periodic multilayers. We describe the fabrication process of such an etched multilayer dispersive element, its characterizationthrough reflectivity measurement and simulations, and its implementation in a high-resolution Johann-type spectrometer. The specially designed patterning of a Mo/B 4 C multilayer is found fruitful in the range of the C K emission as the diffraction pattern narrows by a factor 4 with respect to the non-etched structure.This dispersive element with an improved spectral resolution was successfully implemented for electronic structure study with an improved spectral resolution by x-ray emission spectroscopy. As first results we present the distinction between the chemical states of carbon atoms in various compounds, such as graphite, SiC and B 4 C, bythe different shape of their C K emission band.
Comparison of high Q microresonators operating on a thin plate mode: The lame-mode
The modern communications means use a wide range of frequencies to transmit, code or decrypt info... more The modern communications means use a wide range of frequencies to transmit, code or decrypt information. These tasks are usually performed via different micro-electro-mechanical system (MEMS). The aim of this paper is to present and compare different design of microresonators realized in single crystal silicon using Deep Reactive Ion Etching (DRIE) techniques. The devices are electrostatically driven and use a thin plate mechanical mode: the Lame-mode. This mode depends on the geometric dimensions of the vibrating plate and grants a high quality factor for each device. The characterization has been carried out under an optical test bench using a heterodyne laser probe. The results show a quality factor between 1000 to 4500 at 10.3 MHz in air.
Low power consumption Ge/SiGe Quantum well optical modulator
Asia Communications and Photonics Conference, 2012
ABSTRACT Ge/SiGe quantum well waveguide modulator is demonstrated, working with 1V bias swing, an... more ABSTRACT Ge/SiGe quantum well waveguide modulator is demonstrated, working with 1V bias swing, and energy consumption as low as 108 fJ per bit. The modulator shows a 3dB bandwidth of 23 GHz.
Design and test of new high-Q microresonators fabricated by UV-LIGA
SPIE Proceedings, 2001
We report in this paper the study of a new metallic microresonator realized by UV-LIGA technique.... more We report in this paper the study of a new metallic microresonator realized by UV-LIGA technique. This kind of device is excited electrostatically and takes advantage of the contour modes or Lame-modes of the structure. Design methods of such device are presented and simulated with a Finite Element Program. Details on the microfabrication process are also presented. The vibration modes
Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002
ABSTRACT
10-Gb/s Ge/SiGe Multiple Quantum-Well Waveguide Photodetector
IEEE Photonics Technology Letters, 2011
The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodete... more The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodetector. At , 10 Gb/s operation is demonstrated at wavelengths of 1405 and 1420 nm with a responsivity as high as 0.8 A/W. The device, 3 wide and 80 long, exhibits a dark current of 474 nA at a reverse bias of . These results pave the
Conception et réalisation d'un micro-système pour le contrôle de couche limite
... Ahsan, Tuaha, Shahbaz, Sheraz, Ali Anwar, Aurangzeb, Thao, Rahim, Shehla, Cheema, Kamel, Farh... more ... Ahsan, Tuaha, Shahbaz, Sheraz, Ali Anwar, Aurangzeb, Thao, Rahim, Shehla, Cheema, Kamel, Farhan, Aamer Khan, Rizvi, Faiz, Sohail, Hassan, Mirza, Kaku, Ghufran bhai, Aamer bhai, Mahwish bhabhi, Abdullah, Bushra, Kashif, Abdelhamid etc... ...
Modeling and Characterization of Lamé-mode Microresonators Realized by UV-LIGA
Transducers ’01 Eurosensors XV, 2001
ABSTRACT
Modeling and characterization of Lamé-mode microresonators realized by UV-LIGA
ABSTRACT
Simulation and Characterization of High Q Microresonators Fabricated by UV–LIGA
ABSTRACT
Limiting Factors to the Temperature Performance of THz Quantum Cascade Lasers Based on the Resonant-Phonon Depopulation Scheme
IEEE Transactions on Terahertz Science and Technology, 2012
We analyze the temperature performance of five terahertz (THz)-frequency quantum cascade lasers b... more We analyze the temperature performance of five terahertz (THz)-frequency quantum cascade lasers based on a three-quantum-well resonant-phonon depopulation design as a function of operating frequency in the 2.3–3.8-THz range. We find evidence that the device performance is limited by the interplay between two factors: 1) optical phonon scattering of thermal electrons, which dominates at shorter wavelengths, and 2) parasitic current,
BioMEMS and Nanotechnology II, 2005
30 GHz Ge/SiGe multiple quantum well photodiode
ABSTRACT
High speed electro-absorption modulator based on quantum-confined stark effect from Ge/SiGe multiple quantum wells
ABSTRACT
Ge/SiGe multiple quantum well optoelectronic devices for silicon photonics
Despite being an indirect-gap semiconductor, Ge quantum wells (QWs) have demonstrated, based on i... more Despite being an indirect-gap semiconductor, Ge quantum wells (QWs) have demonstrated, based on its direct gap transition, a QCSE as strong as that of direct-gap III-V semiconductor QWs. In this context, this paper presents our latest experimental results on the light modulation, detection, and emission behaviors of Ge/SiGe MQWs within the telecommunication wavelength region. From the experiments, DC and RF
Ge quantum well electro-absorption modulator with 23 GHz bandwidth
ABSTRACT A 23 GHz Ge/SiGe multiple quantum well electro-absorption waveguide modulator is demonst... more ABSTRACT A 23 GHz Ge/SiGe multiple quantum well electro-absorption waveguide modulator is demonstrated with 10 dB extinction ratio (ER). 9 dB ER is achieved with 1V swing with energy consumption limited to 108 fJ per bit.
Conception de microrésonateurs à mode de Lamé
National audienc
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019
X-Ray Spectrometry, 2012
Etched multilayers obtained by forming a laminar grating pattern within interferential multilayer... more Etched multilayers obtained by forming a laminar grating pattern within interferential multilayer mirrors are used in the soft x-ray range to improve the spectral resolution of wavelength dispersive spectrometers equipped with periodic multilayers. We describe the fabrication process of such an etched multilayer dispersive element, its characterizationthrough reflectivity measurement and simulations, and its implementation in a high-resolution Johann-type spectrometer. The specially designed patterning of a Mo/B 4 C multilayer is found fruitful in the range of the C K emission as the diffraction pattern narrows by a factor 4 with respect to the non-etched structure.This dispersive element with an improved spectral resolution was successfully implemented for electronic structure study with an improved spectral resolution by x-ray emission spectroscopy. As first results we present the distinction between the chemical states of carbon atoms in various compounds, such as graphite, SiC and B 4 C, bythe different shape of their C K emission band.
Comparison of high Q microresonators operating on a thin plate mode: The lame-mode
The modern communications means use a wide range of frequencies to transmit, code or decrypt info... more The modern communications means use a wide range of frequencies to transmit, code or decrypt information. These tasks are usually performed via different micro-electro-mechanical system (MEMS). The aim of this paper is to present and compare different design of microresonators realized in single crystal silicon using Deep Reactive Ion Etching (DRIE) techniques. The devices are electrostatically driven and use a thin plate mechanical mode: the Lame-mode. This mode depends on the geometric dimensions of the vibrating plate and grants a high quality factor for each device. The characterization has been carried out under an optical test bench using a heterodyne laser probe. The results show a quality factor between 1000 to 4500 at 10.3 MHz in air.
Low power consumption Ge/SiGe Quantum well optical modulator
Asia Communications and Photonics Conference, 2012
ABSTRACT Ge/SiGe quantum well waveguide modulator is demonstrated, working with 1V bias swing, an... more ABSTRACT Ge/SiGe quantum well waveguide modulator is demonstrated, working with 1V bias swing, and energy consumption as low as 108 fJ per bit. The modulator shows a 3dB bandwidth of 23 GHz.
Design and test of new high-Q microresonators fabricated by UV-LIGA
SPIE Proceedings, 2001
We report in this paper the study of a new metallic microresonator realized by UV-LIGA technique.... more We report in this paper the study of a new metallic microresonator realized by UV-LIGA technique. This kind of device is excited electrostatically and takes advantage of the contour modes or Lame-modes of the structure. Design methods of such device are presented and simulated with a Finite Element Program. Details on the microfabrication process are also presented. The vibration modes
Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002
ABSTRACT
10-Gb/s Ge/SiGe Multiple Quantum-Well Waveguide Photodetector
IEEE Photonics Technology Letters, 2011
The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodete... more The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodetector. At , 10 Gb/s operation is demonstrated at wavelengths of 1405 and 1420 nm with a responsivity as high as 0.8 A/W. The device, 3 wide and 80 long, exhibits a dark current of 474 nA at a reverse bias of . These results pave the
Conception et réalisation d'un micro-système pour le contrôle de couche limite
... Ahsan, Tuaha, Shahbaz, Sheraz, Ali Anwar, Aurangzeb, Thao, Rahim, Shehla, Cheema, Kamel, Farh... more ... Ahsan, Tuaha, Shahbaz, Sheraz, Ali Anwar, Aurangzeb, Thao, Rahim, Shehla, Cheema, Kamel, Farhan, Aamer Khan, Rizvi, Faiz, Sohail, Hassan, Mirza, Kaku, Ghufran bhai, Aamer bhai, Mahwish bhabhi, Abdullah, Bushra, Kashif, Abdelhamid etc... ...
Modeling and Characterization of Lamé-mode Microresonators Realized by UV-LIGA
Transducers ’01 Eurosensors XV, 2001
ABSTRACT
Modeling and characterization of Lamé-mode microresonators realized by UV-LIGA
ABSTRACT
Simulation and Characterization of High Q Microresonators Fabricated by UV–LIGA
ABSTRACT
Limiting Factors to the Temperature Performance of THz Quantum Cascade Lasers Based on the Resonant-Phonon Depopulation Scheme
IEEE Transactions on Terahertz Science and Technology, 2012
We analyze the temperature performance of five terahertz (THz)-frequency quantum cascade lasers b... more We analyze the temperature performance of five terahertz (THz)-frequency quantum cascade lasers based on a three-quantum-well resonant-phonon depopulation design as a function of operating frequency in the 2.3–3.8-THz range. We find evidence that the device performance is limited by the interplay between two factors: 1) optical phonon scattering of thermal electrons, which dominates at shorter wavelengths, and 2) parasitic current,
BioMEMS and Nanotechnology II, 2005
30 GHz Ge/SiGe multiple quantum well photodiode
ABSTRACT
High speed electro-absorption modulator based on quantum-confined stark effect from Ge/SiGe multiple quantum wells
ABSTRACT
Ge/SiGe multiple quantum well optoelectronic devices for silicon photonics
Despite being an indirect-gap semiconductor, Ge quantum wells (QWs) have demonstrated, based on i... more Despite being an indirect-gap semiconductor, Ge quantum wells (QWs) have demonstrated, based on its direct gap transition, a QCSE as strong as that of direct-gap III-V semiconductor QWs. In this context, this paper presents our latest experimental results on the light modulation, detection, and emission behaviors of Ge/SiGe MQWs within the telecommunication wavelength region. From the experiments, DC and RF
Ge quantum well electro-absorption modulator with 23 GHz bandwidth
ABSTRACT A 23 GHz Ge/SiGe multiple quantum well electro-absorption waveguide modulator is demonst... more ABSTRACT A 23 GHz Ge/SiGe multiple quantum well electro-absorption waveguide modulator is demonstrated with 10 dB extinction ratio (ER). 9 dB ER is achieved with 1V swing with energy consumption limited to 108 fJ per bit.