Z. Messaï | Centre Universitaire Bordj Bou Arreridj (original) (raw)
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Papers by Z. Messaï
ECS journal of solid state science and technology, Apr 16, 2024
Micro and nanostructures, Oct 31, 2023
AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) are very attrac... more AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) are very attractive for high power and high frequency and high temperature applications, with low gate leakage current. In this work we investigated the simulation of Hf 2 O 2 /AlGaN/GaN, Al 2 O 3 /AlGaN/GaN and TiO 2 /AlGaN/GaN MOS-HEMTs, on sapphire substrates and the trapping effects of the devices using TCAD device simulation. Good simulation I D -V DS , I D -V GS , and g m -V GS plots of the passivated and unpassivated devices were obtained. Simulations have revealed in passivation case for Al 2 O 3 as gate oxide , a very high drain current of 2.728A, peak Gm of 0.390 S, and a threshold potential V T of - 5.022 V. The peak values of f T and f max , extracted from S-parameters, were found to be 299.91GHz and 194.53 GHz, respectively for highly scaled device. These results demonstrate the potential of AlGaN/GaN underlap MOS-HEMT for high power and high-frequency applications.
Applied Surface Science, 2010
Applied Surface Science, 2010
Applied Surface Science, 2010
Applied Surface Science, 2010
In this paper we study nanocrystalline zinc oxide thin films produced by oxidation of electrodepo... more In this paper we study nanocrystalline zinc oxide thin films produced by oxidation of electrodeposited zinc nanolayers on a monocrystalline p-Si(1 1 1) substrate.
ECS journal of solid state science and technology, Apr 16, 2024
Micro and nanostructures, Oct 31, 2023
AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) are very attrac... more AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) are very attractive for high power and high frequency and high temperature applications, with low gate leakage current. In this work we investigated the simulation of Hf 2 O 2 /AlGaN/GaN, Al 2 O 3 /AlGaN/GaN and TiO 2 /AlGaN/GaN MOS-HEMTs, on sapphire substrates and the trapping effects of the devices using TCAD device simulation. Good simulation I D -V DS , I D -V GS , and g m -V GS plots of the passivated and unpassivated devices were obtained. Simulations have revealed in passivation case for Al 2 O 3 as gate oxide , a very high drain current of 2.728A, peak Gm of 0.390 S, and a threshold potential V T of - 5.022 V. The peak values of f T and f max , extracted from S-parameters, were found to be 299.91GHz and 194.53 GHz, respectively for highly scaled device. These results demonstrate the potential of AlGaN/GaN underlap MOS-HEMT for high power and high-frequency applications.
Applied Surface Science, 2010
Applied Surface Science, 2010
Applied Surface Science, 2010
Applied Surface Science, 2010
In this paper we study nanocrystalline zinc oxide thin films produced by oxidation of electrodepo... more In this paper we study nanocrystalline zinc oxide thin films produced by oxidation of electrodeposited zinc nanolayers on a monocrystalline p-Si(1 1 1) substrate.