Enric Cabruja | CSIC (Consejo Superior de Investigaciones Científicas-Spanish National Research Council) (original) (raw)
Papers by Enric Cabruja
The next generation of tracking systems, as the one envisaged for the International Linear Collid... more The next generation of tracking systems, as the one envisaged for the International Linear Collider (ILC) will demand track momentum resolutions one order of magnitude better than current state-of-the-art trackers. Mechanical stabilities coping with the precision of ...
EUDET-Memo-2008- …, 2008
We present the comparison of simulated and measured optical functions (reflectance and transmitta... more We present the comparison of simulated and measured optical functions (reflectance and transmittance) of samples of materials employed in the fabrication of silicon microstrip detectors. Using our simulation we are able to extract the refraction indexes of ...
Spie Proceedings Series, 1999
The Centro Nacional de Microelectronica (CNM) exploits an MCM-D technology that uses a silicon su... more The Centro Nacional de Microelectronica (CNM) exploits an MCM-D technology that uses a silicon substrate on which flip chips are mounted using a low cost screen printing technique. The substrates can be either passive with interconnection lines, R's, C's and L's or actives with a CMOS2.5 μm technology cells. The metals used in this technology are aluminium for interconnection purposes, tantalum silicide for making resistors and a multi-layer of wettable metalfor solder connection. In this paper we present a study of the thermal behaviour of this packaging technology. Measurements of sheet resistance and contact resistance versus temperature in the range of-28 to 100°C of the metals used in CNM'sMCM-D technology are shown. A set of classic test structures such as Kelvin contacts, CBR's and Van der Pauw structures have been used for this purpose as well as a Kelvin-like structure to test the contact resistance of the Flip Chip connection. This structure has been proven to be very sensitive allowing the measurement of changes in ball resistance in the range of mΩ.
Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS 2003.
In this paper a multichip module system for automotive applications is described. The use of micr... more In this paper a multichip module system for automotive applications is described. The use of microsystems in automotive industry allows size reduction of electronic units and also a reduction in its cost. The presented microsystem is based on a IMS (Isolated Metal Substrate) substrate, which has been used for integration of analog signal processing stages, complex logic circuits, sensors and
Sensors and Actuators B: Chemical, 1995
ABSTRACT
In this paper a multichip module system for automotive applications is described. The MCM substra... more In this paper a multichip module system for automotive applications is described. The MCM substrate is a IMS (isolated metal substrate), which has been used for integration of analog signal processing stages, complex logic circuits and even power transistors. The functionality of the door module implemented with this MCM, is the control of the power window motor with antipinch feature.
Journal of Instrumentation, 2014
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on, 2014
ABSTRACT This paper presents an integrated test platform for imagers, which allows their electric... more ABSTRACT This paper presents an integrated test platform for imagers, which allows their electrical characterization by directly injecting the input current in each individual pixel. The core of the proposed ITP is a matrix of controllable current sources featuring low technology dependence, together with easily scalable row and column DACs for the digital programming of every single pixel current. A 10 kfps 32×32 4 bit×4 bit ITP chip is integrated in a low-cost 2.5 μm 1M CMOS technology, reporting μA-range full-scale and background programmability and FPN levels below 5%rms. As a result, the proposed ITP achieves accurate stimulation of both image patterns and motion sequences with a compact test setup.
2005 Spanish Conference on Electron Devices, Proceedings, 2005
... Microeng. 7 (247-249) 1997 [5] I.Simon, N.Barsan, M.Bauer, U.Weimar, Sensors and Actuators B ... more ... Microeng. 7 (247-249) 1997 [5] I.Simon, N.Barsan, M.Bauer, U.Weimar, Sensors and Actuators B 73 (1-26) 2001 [6] J.Puigcorbe, D.Vogel, B.Michel, A.Vila, I.Gracia, C.Cane, JRMorante, J.Micromech.Microengin.13 (548-556) 2003 232
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2013
2011 IEEE Nuclear Science Symposium Conference Record, 2011
A novel Compton camera design based on pixelated solid-state detectors is proposed and evaluated ... more A novel Compton camera design based on pixelated solid-state detectors is proposed and evaluated via Monte Carlo simulation, using the Geant4-based Architecture for Medicine-Oriented Simulations GAMOS. For the image reconstruction, the Stochastic Origin Ensemble (SOE) method has been used. The efficiency of the reconstruction of Compton prompt events is constant up to activities of 107 Bq. The signal-to-noise ratio (SNR), i.e., the ratio between real coincidences and mis-reconstructed ones, was above 85% for photon energies ranging from 141 to 511 keV. For a 18F isotope source, a sensitivity of 12 cps/kBq has been obtained. For a 99mTc isotope source, a sensitivity of 15 cps/kBq has been obtained. Using the NEMA NU-4 2008 standard for the PSF estimation, values for the FWHM of 1.80 mm for the spatial resolution with a 18F radioactive source and 3.82 mm with a 99mTc source were obtained.
Microelectronics Reliability, 1990
ABSTRACT
IEEE Transactions on Components and Packaging Technologies, 2002
AbstractIn this paper, it is shown the work carried out on thermal characterization of the main ... more AbstractIn this paper, it is shown the work carried out on thermal characterization of the main materials employed in the deposited-type multichip module (MCM-D) technology. In this technology, silicon chips are mounted onto a silicon substrate by a flipchip technique. The ...
IEEE Electron Device Letters, 2008
A thin-film bulk acoustic wave resonator (FBAR) having a floating, 3-D structure above a CMOS sub... more A thin-film bulk acoustic wave resonator (FBAR) having a floating, 3-D structure above a CMOS substrate is presented. The integration of the FBAR to the CMOS substrate is performed with independence of FBAR or CMOS fabrication technologies. Wafer-level transfer is carried out to obtain a suspended FBAR above CMOS substrates of different technologies, whose resonant frequency is found in the 2.4 GHz band. The electrical interconnection between the FBAR and CMOS is provided by at least two conducting posts, which at the same time offer mechanical support to the resonator's structure. Experimental characterization results and Q-factor comparison with conventional FBAR technologies are discussed.
We report on the production and first optical measurements of novel infrared transparent microstr... more We report on the production and first optical measurements of novel infrared transparent microstrip detectors produced at CNM-IMB Barcelona, in collaboration with IFCA-Santander. The novel aspect of these detectors is the optimization of the thickness of the ...
EUDET-Memo-2008- …, 2008
The SITRA Forward Tracker Prototype is a prototype for a tracker module that can be used in test ... more The SITRA Forward Tracker Prototype is a prototype for a tracker module that can be used in test beams for identifying tracks of particles passing the test setup. It consists of new front end and readout electronics chips produced in 2008 in 130nm technology ...
Applied Physics Letters, 2008
In this letter, we present electrical characteristics of HfO2-based metal-oxide-semiconductor cap... more In this letter, we present electrical characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs) on n- and p-type GaAs, In0.53Ga0.47As, InAs, and InSb substrates, along with the effect of a thin germanium interfacial passivation layer. We found that MOSCAPs on all n-type substrates showed good C-V characteristics with small frequency dispersion (<10% and <200 mV). However, MOSCAPs on p-type GaAs and In0.53Ga0.47As
The next generation of tracking systems, as the one envisaged for the International Linear Collid... more The next generation of tracking systems, as the one envisaged for the International Linear Collider (ILC) will demand track momentum resolutions one order of magnitude better than current state-of-the-art trackers. Mechanical stabilities coping with the precision of ...
EUDET-Memo-2008- …, 2008
We present the comparison of simulated and measured optical functions (reflectance and transmitta... more We present the comparison of simulated and measured optical functions (reflectance and transmittance) of samples of materials employed in the fabrication of silicon microstrip detectors. Using our simulation we are able to extract the refraction indexes of ...
Spie Proceedings Series, 1999
The Centro Nacional de Microelectronica (CNM) exploits an MCM-D technology that uses a silicon su... more The Centro Nacional de Microelectronica (CNM) exploits an MCM-D technology that uses a silicon substrate on which flip chips are mounted using a low cost screen printing technique. The substrates can be either passive with interconnection lines, R's, C's and L's or actives with a CMOS2.5 μm technology cells. The metals used in this technology are aluminium for interconnection purposes, tantalum silicide for making resistors and a multi-layer of wettable metalfor solder connection. In this paper we present a study of the thermal behaviour of this packaging technology. Measurements of sheet resistance and contact resistance versus temperature in the range of-28 to 100°C of the metals used in CNM'sMCM-D technology are shown. A set of classic test structures such as Kelvin contacts, CBR's and Van der Pauw structures have been used for this purpose as well as a Kelvin-like structure to test the contact resistance of the Flip Chip connection. This structure has been proven to be very sensitive allowing the measurement of changes in ball resistance in the range of mΩ.
Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS 2003.
In this paper a multichip module system for automotive applications is described. The use of micr... more In this paper a multichip module system for automotive applications is described. The use of microsystems in automotive industry allows size reduction of electronic units and also a reduction in its cost. The presented microsystem is based on a IMS (Isolated Metal Substrate) substrate, which has been used for integration of analog signal processing stages, complex logic circuits, sensors and
Sensors and Actuators B: Chemical, 1995
ABSTRACT
In this paper a multichip module system for automotive applications is described. The MCM substra... more In this paper a multichip module system for automotive applications is described. The MCM substrate is a IMS (isolated metal substrate), which has been used for integration of analog signal processing stages, complex logic circuits and even power transistors. The functionality of the door module implemented with this MCM, is the control of the power window motor with antipinch feature.
Journal of Instrumentation, 2014
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on, 2014
ABSTRACT This paper presents an integrated test platform for imagers, which allows their electric... more ABSTRACT This paper presents an integrated test platform for imagers, which allows their electrical characterization by directly injecting the input current in each individual pixel. The core of the proposed ITP is a matrix of controllable current sources featuring low technology dependence, together with easily scalable row and column DACs for the digital programming of every single pixel current. A 10 kfps 32×32 4 bit×4 bit ITP chip is integrated in a low-cost 2.5 μm 1M CMOS technology, reporting μA-range full-scale and background programmability and FPN levels below 5%rms. As a result, the proposed ITP achieves accurate stimulation of both image patterns and motion sequences with a compact test setup.
2005 Spanish Conference on Electron Devices, Proceedings, 2005
... Microeng. 7 (247-249) 1997 [5] I.Simon, N.Barsan, M.Bauer, U.Weimar, Sensors and Actuators B ... more ... Microeng. 7 (247-249) 1997 [5] I.Simon, N.Barsan, M.Bauer, U.Weimar, Sensors and Actuators B 73 (1-26) 2001 [6] J.Puigcorbe, D.Vogel, B.Michel, A.Vila, I.Gracia, C.Cane, JRMorante, J.Micromech.Microengin.13 (548-556) 2003 232
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2013
2011 IEEE Nuclear Science Symposium Conference Record, 2011
A novel Compton camera design based on pixelated solid-state detectors is proposed and evaluated ... more A novel Compton camera design based on pixelated solid-state detectors is proposed and evaluated via Monte Carlo simulation, using the Geant4-based Architecture for Medicine-Oriented Simulations GAMOS. For the image reconstruction, the Stochastic Origin Ensemble (SOE) method has been used. The efficiency of the reconstruction of Compton prompt events is constant up to activities of 107 Bq. The signal-to-noise ratio (SNR), i.e., the ratio between real coincidences and mis-reconstructed ones, was above 85% for photon energies ranging from 141 to 511 keV. For a 18F isotope source, a sensitivity of 12 cps/kBq has been obtained. For a 99mTc isotope source, a sensitivity of 15 cps/kBq has been obtained. Using the NEMA NU-4 2008 standard for the PSF estimation, values for the FWHM of 1.80 mm for the spatial resolution with a 18F radioactive source and 3.82 mm with a 99mTc source were obtained.
Microelectronics Reliability, 1990
ABSTRACT
IEEE Transactions on Components and Packaging Technologies, 2002
AbstractIn this paper, it is shown the work carried out on thermal characterization of the main ... more AbstractIn this paper, it is shown the work carried out on thermal characterization of the main materials employed in the deposited-type multichip module (MCM-D) technology. In this technology, silicon chips are mounted onto a silicon substrate by a flipchip technique. The ...
IEEE Electron Device Letters, 2008
A thin-film bulk acoustic wave resonator (FBAR) having a floating, 3-D structure above a CMOS sub... more A thin-film bulk acoustic wave resonator (FBAR) having a floating, 3-D structure above a CMOS substrate is presented. The integration of the FBAR to the CMOS substrate is performed with independence of FBAR or CMOS fabrication technologies. Wafer-level transfer is carried out to obtain a suspended FBAR above CMOS substrates of different technologies, whose resonant frequency is found in the 2.4 GHz band. The electrical interconnection between the FBAR and CMOS is provided by at least two conducting posts, which at the same time offer mechanical support to the resonator's structure. Experimental characterization results and Q-factor comparison with conventional FBAR technologies are discussed.
We report on the production and first optical measurements of novel infrared transparent microstr... more We report on the production and first optical measurements of novel infrared transparent microstrip detectors produced at CNM-IMB Barcelona, in collaboration with IFCA-Santander. The novel aspect of these detectors is the optimization of the thickness of the ...
EUDET-Memo-2008- …, 2008
The SITRA Forward Tracker Prototype is a prototype for a tracker module that can be used in test ... more The SITRA Forward Tracker Prototype is a prototype for a tracker module that can be used in test beams for identifying tracks of particles passing the test setup. It consists of new front end and readout electronics chips produced in 2008 in 130nm technology ...
Applied Physics Letters, 2008
In this letter, we present electrical characteristics of HfO2-based metal-oxide-semiconductor cap... more In this letter, we present electrical characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs) on n- and p-type GaAs, In0.53Ga0.47As, InAs, and InSb substrates, along with the effect of a thin germanium interfacial passivation layer. We found that MOSCAPs on all n-type substrates showed good C-V characteristics with small frequency dispersion (<10% and <200 mV). However, MOSCAPs on p-type GaAs and In0.53Ga0.47As