dblp: Microelectronics Reliability, Volume 43 (original) (raw)

default search action

• combined dblp search
• author search
• venue search
• publication search

Authors:

• no matches
• 

Venues:

• no matches
• 

Publications:

• no matches
• 

• 

• 

• 

• 

• 
  jump to

  • Number 1
  • Number 2
  • Number 3
  • Number 4
  • Number 5
  • Number 6
  • Number 7
  • Number 8
  • Number 9-11
  • Number 12

• 

• > Home > Journals > Microelectronics Reliability

SPARQL queries

Refine list

refinements active!

zoomed in on ?? of ?? records

view refined list in

export refined list as

Volume 43, Number 1, January 2003

• 
  • 
  • 
  • 
  • 
    Harry A. Schafft, Linda M. Head, Jason Gill, Timothy D. Sullivan:
    Early reliability assessment by using deep censoring. 1-16
• 
  • 
  • 
  • 
  • 
    Michael W. Ruprecht, Guenther Benstetter, Douglas B. Hunt:
    A review of ULSI failure analysis techniques for DRAMs. Part II: Defect isolation and visualization. 17-41
• 
  • 
  • 
  • 
  • 
    C.-T. Wu, A. Mieckowski, R. S. Ridley, G. Dolny, T. Grebs, J. Linn, Jerzy Ruzyllo:
    Effect of nitridation on the reliability of thick gate oxides. 43-47
• 
  • 
  • 
  • 
  • 
    Emil V. Jelenkovic, K. Y. Tong, Wai Yuen Cheung, S. P. Wong:
    Degradation of RuO2 thin films in hydrogen atmosphere at temperatures between 150 and 250 degreeC. 49-55
• 
  • 
  • 
  • 
  • 
    N. A. Hastas, C. A. Dimitriadis, J. Brini, G. Kamarinos, V. K. Gueorguiev, S. Kaschieva:
    Effects of gamma-ray irradiation on polycrystalline silicon thin-film transistors. 57-60
• 
  • 
  • 
  • 
  • 
    Vladislav A. Vashchenko, Ann Concannon, Marcel ter Beek, P. Hopper:
    LVTSCR structures for latch-up free ESD protection of BiCMOS RF circuits. 61-69
• 
  • 
  • 
  • 
  • 
    David Trémouilles, Géraldine Bertrand, Marise Bafleur, Felix Beaudoin, Philippe Perdu, Nicolas Guitard, Lionel Lescouzères:
    TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology. 71-79
• 
  • 
  • 
  • 
  • 
    Paolo Cova, Roberto Menozzi, Marco Portesine:
    Power p-i-n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery. 81-87
• 
  • 
  • 
  • 
  • 
    Stéphane Forster, Thierry Lequeu, Robert Jérisian:
    Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3. 89-98
• 
  • 
  • 
  • 
  • 
    G. Romo, Tom J. Smy, David J. Walkey, B. Reid:
    Modeling facet heating in ridge lasers. 99-110
• 
  • 
  • 
  • 
  • 
    A. Cazarré, F. Lépinois, A. Marty, S. Pinel, J. Tasselli, J. P. Bailbé, J. R. Morante, F. Murray:
    Electrical qualification of new ultrathin integration techniques. 111-115
• 
  • 
  • 
  • 
  • 
    M. Karilahti:
    Neural net analysis of integrated circuit yield dependence on CMOS process control parameters. 117-121
• 
  • 
  • 
  • 
  • 
    Kuo-Ming Chen, Kuo-Ning Chiang:
    Impact of probing procedure on flip chip reliability. 123-130
• 
  • 
  • 
  • 
  • 
    Chi-Hui Chien, Yung-Chang Chen, Yii-Tay Chiou, Thaiping Chen, Chi-Chang Hsieh, Jia-Jin Yan, Wei-Zhi Chen, Yii-Der Wu:
    Influences of the moisture absorption on PBGA package's warpage during IR reflow process. 131-139
• 
  • 
  • 
  • 
  • 
    Harry K. Charles Jr., K. J. Mach, S. J. Lehtonen, Arthur S. Francomacaro, J. S. DeBoy, R. L. Edwards:
    Wirebonding at higher ultrasonic frequencies: reliability and process implications. 141-153
• 
  • 
  • 
  • 
  • 
    Thomas D. Moore, John L. Jarvis:
    Thermomechanical deformation of a bimaterial plate--as applied to laminate IC assemblies. 155-162
• 
  • 
  • 
  • 
  • 
    David C. T. Or, Pui-To Lai, Johnny K. O. Sin, Paul C. K. Kwok, Jing-Ping Xu:
    Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation. 163-166
• 
  • 
  • 
  • 
  • 
    Roland Sorge:
    Implant dose monitoring by MOS C-V measurement. 167-171
• 
  • 
  • 
  • 
  • 
    Thomas Beauchêne, Dean Lewis, Felix Beaudoin, Vincent Pouget, Philippe Perdu, Pascal Fouillat, Yves Danto:
    A physical approach on SCOBIC investigation in VLSI. 173-177

Volume 43, Number 2, February 2003

• 
  • 
  • 
  • 
  • 
    H. E. Aldrete-Vidrio, J. L. del Valle, J. Santana-Corte:
    A TCAD comparative study of power rectifiers: modified P-i-N vs. modified mosaic contact P-i-N diode. 181-188
• 
  • 
  • 
  • 
  • 
    Magali Estrada, A. Afzalian, Denis Flandre, Antonio Cerdeira, Héctor Báez-Medina, A. de Lucca:
    FD MOS SOI circuit to enhance the ratio of illuminated to dark current of a co-integrated a-Si: H photodiode. 189-193
• 
  • 
  • 
  • 
  • 
    Roberto S. Murphy-Arteaga, Jesus Huerta-Chua, Alejandro Díaz-Sánchez, Alfonso Torres-Jácome, Wilfrido Calleja Arriaga, M. Landa-Vázquez:
    Fabrication, characterisation and modelling of integrated on-silicon inductors. 195-201
• 
  • 
  • 
  • 
  • 
    Javier Lemus-López, Alejandro Díaz-Sánchez, Jaime Ramírez-Angulo:
    An analog median filter with fuzzy adaptation. 203-207
• 
  • 
  • 
  • 
  • 
    Duarte Lopes de Oliveira, Marius Strum, Jiang Chau Wang, Wagner Chiepa Cunha:
    Miriã: a CAD tool to synthesize multi-burst controllers for heterogeneous systems. 209-215
• 
  • 
  • 
  • 
  • 
    Deni Torres, A. Redondo, M. E. Guzmán:
    MSOH processor for STM-0/STS-1 to STM-4/STS-12: component of a SDH/SONET library. 217-223
• 
  • 
  • 
  • 
  • 
    Sima Dimitrijev, Philippe Jamet:
    Advances in SiC power MOSFET technology. 225-233
• 
  • 
  • 
  • 
  • 
    M. Pecovska-Gjorgjevich, Nenad Novkovski, Elena Atanassova:
    Electrical properties of thin RF sputtered Ta2O5 films after constant current stress. 235-241
• 
  • 
  • 
  • 
  • 
    François Dieudonné, Sébastien Haendler, Jalal Jomaah, Francis Balestra:
    Low frequency noise in 0.12 mum partially and fully depleted SOI technology. 243-248
• 
  • 
  • 
  • 
  • 
    Paul Isaac Hagouel:
    Blazed diffraction gratings fabricated using X-ray lithography: fabrication, modeling and simulation. 249-258
• 
  • 
  • 
  • 
  • 
    K. S. Kim, S. H. Huh, K. Suganuma:
    Effects of fourth alloying additive on microstructures and tensile properties of Sn-Ag-Cu alloy and joints with Cu. 259-267
• 
  • 
  • 
  • 
  • 
    J. D. Wu, C. Y. Huang, C. C. Liao:
    Fracture strength characterization and failure analysis of silicon dies. 269-277
• 
  • 
  • 
  • 
  • 
    C. W. Tan, Y. C. Chan, N. H. Yeung:
    Effect of autoclave test on anisotropic conductive joints. 279-285
• 
  • 
  • 
  • 
  • 
    Ajit R. Dhamdhere, Ajay P. Malshe, William F. Schmidt, William D. Brown:
    Investigation of reliability issues in high power laser diode bar packages. 287-295
• 
  • 
  • 
  • 
  • 
    Paiboon Tangyunyong:
    Thermal modeling of localized laser heating in multi-level interconnects. 297-305
• 
  • 
  • 
  • 
  • 
    Bart Vandevelde, Dominiek Degryse, Eric Beyne, Eric Roose, Dorina Corlatan, Guido Swaelen, Geert Willems, Filip Christiaens, Alcatel Bell, Dirk Vandepitte:
    Modified micro-macro thermo-mechanical modelling of ceramic ball grid array packages. 307-318
• 
  • 
  • 
  • 
  • 
    Sasa A. Jankovic, Dejan M. Maksimovic:
    Power saving modes in modern microcontroller design, diagnostics and reliability. 319-326
• 
  • 
  • 
  • 
  • 
    M. M. Shahidul Hassan:
    Base transit time of an epitaxial n+pn-n+ bipolar transistor considering Kirk effect. 327-332
• 
  • 
  • 
  • 
  • 
    Sadegh Abbasian, Ebrahim Farjah:
    A new drain current model for short-channel MOSFETs. 333-338
• 
  • 
  • 
  • 
  • 
    Keiji Takagi:
    A study on 1/f noise spectrum generation in nonlinear transmission media and biomedical systems. 339-342

Volume 43, Number 3, March 2003

• 
  • 
  • 
  • 
  • 
    Andrzej Dziedzic:
    Special Section on IMAPS-Europe 2002. 343
• 
  • 
  • 
  • 
  • 
    Jürgen Wilde, Yuqing Lai:
    Design optimization of an eddy current sensor using the finite-elements method. 345-349
• 
  • 
  • 
  • 
  • 
    Arun Chandrasekhar, Steven Brebels, Serguei Stoukatch, Eric Beyne, Walter De Raedt, Bart Nauwelaers:
    The influence of packaging materials on RF performance. 351-357
• 
  • 
  • 
  • 
  • 
    Jürgen Schulz-Harder:
    Advantages and new development of direct bonded copper substrates. 359-365
• 
  • 
  • 
  • 
  • 
    Guo Lihui, Yu Mingbin, Foo Pang Dow:
    RF inductors and capacitors integrated on silicon chip by CMOS compatible Cu interconnect technology. 367-370
• 
  • 
  • 
  • 
  • 
    J. Müller, J. Klein, J. Rayho:
    In-process verification of MLC substrates. 371-375
• 
  • 
  • 
  • 
  • 
    Andrzej Dziedzic, Lars Rebenklau, Leszek J. Golonka, Klaus-Jürgen Wolter:
    Fodel microresistors-processing and basic electrical properties. 377-383
• 
  • 
  • 
  • 
  • 
    Kinam Kim, Yoon-Jong Song:
    Integration technology for ferroelectric memory devices. 385-398
• 
  • 
  • 
  • 
  • 
    Mansun Chan, Xuemei Xi, Jin He, Kanyu M. Cao, Mohan V. Dunga, Ali M. Niknejad, Ping K. Ko, Chenming Hu:
    Practical compact modeling approaches and options for sub-0.1 mum CMOS technologies. 399-404
• 
  • 
  • 
  • 
  • 
    Handoko Linewih, Sima Dimitrijev, Kuan Yew Cheong:
    Channel-carrier mobility parameters for 4H SiC MOSFETs. 405-411
• 
  • 
  • 
  • 
  • 
    Salvador Hidalgo, David Flores, Isabel Obieta, I. Mazarredo:
    Passivation and packaging of positive bevelled edge termination and related electrical stability. 413-420
• 
  • 
  • 
  • 
  • 
    Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, Chi-Chung Liu:
    Design of multi-finger HBTs with a thermal-electrical model. 421-426
• 
  • 
  • 
  • 
  • 
    Vladislav A. Vashchenko, Ann Concannon, Marcel ter Beek, P. Hopper:
    Quasi-3D simulation approach for comparative evaluation of triggering ESD protection structures. 427-437
• 
  • 
  • 
  • 
  • 
    Thomas Beauchêne, Dean Lewis, Felix Beaudoin, Vincent Pouget, Romain Desplats, Pascal Fouillat, Philippe Perdu, Marise Bafleur, David Trémouilles:
    Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization. 439-444
• 
  • 
  • 
  • 
  • 
    Petteri Palm, Jarmo Määttänen, Yannick De Maquillé, Alain Picault, Jan Vanfleteren, Björn Vandecasteele:
    Comparison of different flex materials in high density flip chip on flex applications. 445-451
• 
  • 
  • 
  • 
  • 
    R. K. Shiue, L. W. Tsay, C. L. Lin, J. L. Ou:
    The reliability study of selected Sn-Zn based lead-free solders on Au/Ni-P/Cu substrate. 453-463
• 
  • 
  • 
  • 
  • 
    Yuko Sawada, Kozo Harada, Hirofumi Fujioka:
    Study of package warp behavior for high-performance flip-chip BGA. 465-471
• 
  • 
  • 
  • 
  • 
    Hirokazu Ezawa, Masaharu Seto, Masahiro Miyata, Hiroshi Tazawa:
    Polymer film deposition with fine pitch openings by stencil printing. 473-479
• 
  • 
  • 
  • 
  • 
    C. W. Tan, Y. C. Chan, N. H. Yeung:
    Behaviour of anisotropic conductive joints under mechanical loading. 481-486
• 
  • 
  • 
  • 
  • 
    Thomas D. Moore, John L. Jarvis:
    A simple and fundamental design rule for resisting delamination in bimaterial structures. 487-494
• 
  • 
  • 
  • 
  • 
    Wen Lea Pearn, Ming-Hung Shu:
    An algorithm for calculating the lower confidence bounds of CPU and CPL with application to low-drop-out linear regulators. 495-502
• 
  • 
  • 
  • 
  • 
    Takeshi Yanagisawa, Takeshi Kojima:
    The stability of the CuInSe2 solar mini-module I-V characteristics under continuous and light/dark irradiation cycle tests. 503-507
• 
  • 
  • 
  • 
  • 
    Gady Golan, Alex Axelevitch, B. Sigalov, B. Gorenstein:
    Integrated thin film heater-thermocouple systems. 509-512
• 
  • 
  • 
  • 
  • 
    Mile K. Stojcev:
    Memory Design Techniques for Low Energy Embedded Systems; Alberto Macii, Luca Benini, Massimo Poncino. Kluwer Academic Publishers, Boston, USA, 2002. Hard cover, pp 144 plus XI, ISBN 0-7923-7690-0. 513
• 
  • 
  • 
  • 
  • 
    Mile K. Stojcev:
    A designer's guide to built-in self-test; Charles E. Stround. Kluwer Academic Publishers, Boston, 2002. Hardcover, pp 319, plus XVI, ISBN 1-4020-7050-0. 514-515
• 
  • 
  • 
  • 
  • 
    Mile K. Stojcev:
    Semiconductor Memories: Technologies, Testing and Reliability; Ashok K. Sharma. IEEE Press and Wiley Interscience, New York, 1997. Hardcover, pp 462, plus XII, ISBN 0-7803-1000-4. 515

Volume 43, Number 4, April 2003

• 
  • 
  • 
  • 
  • 
    Vitezslav Benda:
    The quest for optimum technology of power semiconductor devices. 517
• 
  • 
  • 
  • 
  • 
    Noel Y. A. Shammas:
    Present problems of power module packaging technology. 519-527
• 
  • 
  • 
  • 
  • 
    Josef Lutz, Martin Domeij:
    Dynamic avalanche and reliability of high voltage diodes. 529-536
• 
  • 
  • 
  • 
  • 
    J. Vobecký, Pavel Hazdra, V. Záhlava:
    Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode. 537-544
• 
  • 
  • 
  • 
  • 
    M. Blaho, Dionyz Pogany, Erich Gornik, Marie Denison, Gerhard Groos, Matthias Stecher:
    Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method. 545-548
• 
  • 
  • 
  • 
  • 
    Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Candelori:
    Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact, . 549-555
• 
  • 
  • 
  • 
  • 
    Václav Papez, B. Kojecký, J. Kozísek, J. Hejhal:
    Transient effects on high voltage diode stack under reverse bias. 557-564
• 
  • 
  • 
  • 
  • 
    B. Morillon, Jean-Marie Dilhac, Christian Ganibal, C. Anceau:
    Study of aluminum thermomigration as a low thermal budget technique for innovative power devices. 565-569
• 
  • 
  • 
  • 
  • 
    Adeline Feybesse, Ivana Deram, Jean-Michel Reynes, Eric Moreau:
    Copper metallization influence on power MOS reliability. 571-576
• 
  • 
  • 
  • 
  • 
    Giovanni Busatto, Roberto La Capruccia, Francesco Iannuzzo, Francesco Velardi, Roberto Roncella:
    MAGFET based current sensing for power integrated circuit. 577-583
• 
  • 
  • 
  • 
  • 
    Hei Wong:
    Low-frequency noise study in electron devices: review and update. 585-599
• 
  • 
  • 
  • 
  • 
    Minkyu Je, Jeonghu Han, Hyungcheol Shin, Kwyro Lee:
    A simple four-terminal small-signal model of RF MOSFETs and its parameter extraction. 601-609
• 
  • 
  • 
  • 
  • 
    Jackie Chan, Hei Wong, M. C. Poon, Chi-Wah Kok:
    Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride. 611-616
• 
  • 
  • 
  • 
  • 
    S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Merlyne M. De Souza:
    Characterisation of series resistance degradation through charge pumping technique. 617-624
• 
  • 
  • 
  • 
  • 
    Chunyan Yin, M. O. Alam, Yan Cheong Chan, Chris Bailey, Hua Lu:
    The effect of reflow process on the contact resistance and reliability of anisotropic conductive film interconnection for flip chip on flex applications. 625-633
• 
  • 
  • 
  • 
  • 
    C. Hillman, B. Castillo, Michael G. Pecht:
    Diffusion and absorption of corrosive gases in electronic encapsulants. 635-643
• 
  • 
  • 
  • 
  • 
    Pekka Heino, Eero Ristolainen:
    Strength of Ta-Si interfaces by molecular dynamics. 645-650
• 
  • 
  • 
  • 
  • 
    Wen Lea Pearn, G. H. Lin:
    A reliable procedure for testing linear regulators with one-sided specification limits based on multiple samples. 651-664
• 
  • 
  • 
  • 
  • 
    V. A. Gritsenko, A. V. Shaposhnikov, Yu. N. Novikov, A. P. Baraban, Hei Wong, G. M. Zhidomirov, M. Roger:
    Onefold coordinated oxygen atom: an electron trap in the silicon oxide. 665-669
• 
  • 
  • 
  • 
  • 
    N. A. Hastas, C. A. Dimitriadis, F. V. Farmakis, G. Kamarinos:
    Effects of hydrogenation on the performance and stability of p-channel polycrystalline silicon thin-film transistors. 671-674
• 
  • 
  • 
  • 
  • 
    Z. Synowiec, B. Paszkiewicz:
    Electron transport in implant isolation GaAs layers. 675-679
• 
  • 
  • 
  • 
  • 
    Johan Liu:
    Foldable Flex and Thinned Silicon Chips for Multichip Packaging; John Balde (Ed.), Kluwer Academic Publishers, Boston, USA, December 2002. Hardbound, 340 pp, Number of figures and tables 200, ISBN 0-7923-7676-5. 681-683
• 
  • 
  • 
  • 
  • 
    Mile K. Stojcev:
    System Design with System C; Thorsten Grotker, Stan Liao, Grant Martin, Stuart Swan. Kluwer Academic Publishers, Boston, 2002. Hardcover, pp 217, plus X, ISBN 1-4020-7027-1. 683-684

Volume 43, Number 5, May 2003

• 
  • 
  • 
  • 
  • 
    Mark Zwolinski, Manoj Singh Gaur:
    Integrating testability with design space exploration. 685-693
• 
  • 
  • 
  • 
  • 
    Reza Ghaffarian:
    Qualification approaches and thermal cycle test results for CSP/BGA/FCBGA. 695-706
• 
  • 
  • 
  • 
  • 
    Ru Huang, Jinyan Wang, Jin He, Min Yu, Xing Zhang, Yangyuan Wang:
    Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration. 707-711
• 
  • 
  • 
  • 
  • 
    Summer F. C. Tseng, Wei-Ting Kary Chien, Bing-Chu Cai:
    Improvement of poly-silicon hole induced gate oxide failure by silicon rich oxidation. 713-724
• 
  • 
  • 
  • 
  • 
    Xiaofang Gao, Juin J. Liou, Joe Bernier, Gregg D. Croft, Waisum Wong, Satya Vishwanathan:
    Optimization of on-chip ESD protection structures for minimal parasitic capacitance. 725-733
• 
  • 
  • 
  • 
  • 
    Chihoon Lee, Donggun Park, Hyeong Joon Kim, Wonshik Lee:
    Electrical reliability of highly reliable 256M-bit mobile DRAM with top-edge round STI and dual gate oxide. 735-739
• 
  • 
  • 
  • 
  • 
    Tong Yan Tee, Chek Lim Kho, Daniel Yap, Carol Toh, Xavier Baraton, Zhaowei Zhong:
    Reliability assessment and hygroswelling modeling of FCBGA with no-flow underfill. 741-749
• 
  • 
  • 
  • 
  • 
    Qian Wang, Naoe Hosoda, Toshihiro Itoh, Tadatomo Suga:
    Reliability of Au bump-Cu direct interconnections fabricated by means of surface activated bonding method. 751-756
• 
  • 
  • 
  • 
  • 
    Kyung-Seob Kim, C. H. Yu, Nam-Hoon Kim, N. K. Kim, H. J. Chang, E. G. Chang:
    Isothermal aging characteristics of Sn-Pb micro solder bumps. 757-763
• 
  • 
  • 
  • 
  • 
    W. D. van Driel, G. Q. Zhang, J. H. J. Janssen, Leo J. Ernst, Fei Su, Kerm Sin Chian, Sung Yi:
    Prediction and verification of process induced warpage of electronic packages. 765-774
• 
  • 
  • 
  • 
  • 
    Ping Zhao, Michael G. Pecht:
    Field failure due to creep corrosion on components with palladium pre-plated leadframes. 775-783
• 
  • 
  • 
  • 
  • 
    Sam Z. Zhao:
    Thermal design of a broadband communication system with detailed modeling of TBGA packages. 785-793
• 
  • 
  • 
  • 
  • 
    Vencislav C. Valchev, Alex Van den Bossche:
    Accurate natural convection modelling for magnetic components. 795-802
• 
  • 
  • 
  • 
  • 
    T. Y. Lin, K. L. Davison, W. S. Leong, Simon Chua, Y. F. Yao, J. S. Pan, J. W. Chai, K. C. Toh, W. C. Tjiu:
    Surface topographical characterization of silver-plated film on the wedge bondability of leaded IC packages. 803-809
• 
  • 
  • 
  • 
  • 
    T. Y. Lin, C. M. Fang, Y. F. Yao, K. H. Chua:
    Development of the green plastic encapsulation for high density wirebonded leaded packages. 811-817
• 
  • 
  • 
  • 
  • 
    Mile K. Stojcev:
    High Performance Memory Testing: Design Principles, Fault Modeling and Self-Test; R. Dean Adams, Kluwer Academic Publishers, Boston, 2003, Hardcover, pp 247, plus XIII, ISBN 1-4020-7255-4. 819

Volume 43, Number 6, June 2003

• 
  • 
  • 
  • 
  • 
    Wallace T. Anderson, Roberto Menozzi:
    Editorial. 821
• 
  • 
  • 
  • 
  • 
    Hyungtak Kim, Alexei Vertiatchikh, Richard M. Thompson, Vinayak Tilak, Thomas R. Prunty, James R. Shealy, Lester F. Eastman:
    Hot electron induced degradation of undoped AlGaN/GaN HFETs. 823-827
• 
  • 
  • 
  • 
  • 
    Frank Gao:
    High reliability in PHEMT MMICs with dual-etch-stop AlAs layers for high-speed RF switch applications. 829-837
• 
  • 
  • 
  • 
  • 
    Frank Brunner, A. Braun, Paul Kurpas, J. Schneider, Joachim Würfl, Markus Weyers:
    Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE. 839-844
• 
  • 
  • 
  • 
  • 
    William J. Rowe, Bruce M. Paine, Adele E. Schmitz, Robert H. Walden, Michael J. Delaney:
    Reliability of 100 nm silicon nitride capacitors in an InP HEMT MMIC process. 845-851
• 
  • 
  • 
  • 
  • 
    Bruce M. Paine, Ami P. Shah, Thomas Rust:
    The effects of ternary alloys on thermal resistances of HBTs, HEMTs, and laser diodes. 853-858
• 
  • 
  • 
  • 
  • 
    Charles S. Whitman:
    Accelerated life test calculations using the method of maximum likelihood: an improvement over least squares. 859-864
• 
  • 
  • 
  • 
  • 
    Rolf-Peter Vollertsen:
    Thin dielectric reliability assessment for DRAM technology with deep trench storage node. 865-878
• 
  • 
  • 
  • 
  • 
    John J. H. Reche, Deok-Hoon Kim:
    Wafer level packaging having bump-on-polymer structure. 879-894
• 
  • 
  • 
  • 
  • 
    Julio C. Tinoco, Magali Estrada, G. Romero:
    Room temperature plasma oxidation mechanism to obtain ultrathin silicon oxide and titanium oxide layers. 895-903
• 
  • 
  • 
  • 
  • 
    Ivanka P. Stanimirovic, Milan Jevtic, Zdravko I. Stanimirovic:
    High-voltage pulse stressing of thick-film resistors and noise. 905-911
• 
  • 
  • 
  • 
  • 
    Hong Meng Ho, Wai Lam, Serguei Stoukatch, Petar Ratchev, Charles J. Vath, Eric Beyne:
    Direct gold and copper wires bonding on copper. 913-923
• 
  • 
  • 
  • 
  • 
    Po-Jen Zheng, J. Z. Lee, K. H. Liu, J. D. Wu, S. C. Hung:
    Solder joint reliability of TFBGA assemblies with fresh and reworked solder balls. 925-934
• 
  • 
  • 
  • 
  • 
    D. S. Liu, Y. C. Chao, C. H. Lin, G. S. Shen, H. S. Liu:
    Numerical study on the bonding tool position, tip profile and planarity angle influences on TAB/ILB interconnection reliability. 935-943
• 
  • 
  • 
  • 
  • 
    Dominik Kasprowicz, Witold A. Pleskacz:
    Improvement of integrated circuit testing reliability by using the defect based approach. 945-953
• 
  • 
  • 
  • 
  • 
    Belén Calvo, Santiago Celma, Pedro A. Martínez, Maria Teresa Sanz:
    Novel high performance CMOS current conveyor. 955-961
• 
  • 
  • 
  • 
  • 
    Wen Lea Pearn, Ming-Hung Shu:
    Manufacturing capability control for multiple power-distribution switch processes based on modified Cpk MPPAC. 963-975
• 
  • 
  • 
  • 
  • 
    Takeshi Yanagisawa, Takeshi Kojima:
    Degradation of InGaN blue light-emitting diodes under continuous and low-speed pulse operations. 977-980
• 
  • 
  • 
  • 
  • 
    Ali Behcet Alpat, Roberto Battiston, Marco Bizzarri, Diego Caraffini, E. Fiori, A. Papi, Marco Petasecca, A. Pontetti:
    The radiation sensitivity mapping of ICs using an IR pulsed laser system. 981-984

Volume 43, Number 7, July 2003

• 
  • 
  • 
  • 
  • 
    Horst A. Gieser:
    On-chip electrostatic discharge ESD. 985-986
• 
  • 
  • 
  • 
  • 
    Steven S. Poon, Timothy J. Maloney:
    New considerations for MOSFET power clamps. 987-991
• 
  • 
  • 
  • 
  • 
    Markus P. J. Mergens, Christian C. Russ, Koen G. Verhaege, John Armer, Phillip Jozwiak, Russ Mohn:
    High holding current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation. 993-1000
• 
  • 
  • 
  • 
  • 
    Martin Streibl, Kai Esmark, A. Sieck, Wolfgang Stadler, M. Wendel, J. Szatkowski, Harald Gossner:
    Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies. 1001-1010
• 
  • 
  • 
  • 
  • 
    Vesselin K. Vassilev, Snezana Jenei, Guido Groeseneken, Rafael Venegas, Steven Thijs, Vincent De Heyn, M. Natarajan Iyer, Michiel Steyaert, Herman E. Maes:
    High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices. 1011-1020
• 
  • 
  • 
  • 
  • 
    Sopan Joshi, Elyse Rosenbaum:
    Simulator-independent compact modeling of vertical npn transistors for ESD and RF circuit simulation. 1021-1027
• 
  • 
  • 
  • 
  • 
    Boris Lisenker:
    Process influence on product CDM ESD performance. 1029-1037
• 
  • 
  • 
  • 
  • 
    Sherry Suat Cheng Khoo, Pee Ya Tan, Steven H. Voldman:
    Microanalysis and electromigration reliability performance of high current transmission line pulse (TLP) stressed copper interconnects. 1039-1045
• 
  • 
  • 
  • 
  • 
    Ingrid De Wolf:
    MEMS reliability. 1047-1048
• 
  • 
  • 
  • 
  • 
    W. Merlijn van Spengen:
    MEMS reliability from a failure mechanisms perspective. 1049-1060
• 
  • 
  • 
  • 
  • 
    Xavier Lafontan, Francis Pressecq, Felix Beaudoin, Sebastien Rigo, M. Dardalhon, J.-L. Roux, Petra Schmitt, J. Kuchenbecker, B. Baradat, Djemel Lellouchi:
    The advent of MEMS in space. 1061-1083
• 
  • 
  • 
  • 
  • 
    Roland Müller-Fiedler, Volker Knoblauch:
    Reliability aspects of microsensors and micromechatronic actuators for automotive applications. 1085-1097
• 
  • 
  • 
  • 
  • 
    Alex Dommann, A. Enzler, N. Onda:
    Advanced X-ray analysis techniques to investigate aging of micromachined silicon actuators for space application. 1099-1103
• 
  • 
  • 
  • 
  • 
    X. Q. Shi, Z. P. Wang, J. P. Pickering:
    A new methodology for the characterization of fracture toughness of filled epoxy films involved in microelectronics packages. 1105-1115
• 
  • 
  • 
  • 
  • 
    Tong Yan Tee, Hun Shen Ng, Daniel Yap, Xavier Baraton, Zhaowei Zhong:
    Board level solder joint reliability modeling and testing of TFBGA packages for telecommunication applications. 1117-1123
• 
  • 
  • 
  • 
  • 
    Yannick Deshayes, Laurent Béchou, Jean-Yves Delétage, Frédéric Verdier, Yves Danto, Dominique Laffitte, Jean-Luc Goudard:
    Three-dimensional FEM simulations of thermomechanical stresses in 1.55 mum Laser modules. 1125-1136
• 
  • 
  • 
  • 
  • 
    Jean-Yves Delétage, F. J.-M. Verdier, Bernard Plano, Yannick Deshayes, Laurent Béchou, Yves Danto:
    Reliability estimation of BGA and CSP assemblies using degradation law model and technological parameters deviations. 1137-1144
• 
  • 
  • 
  • 
  • 
    Mamidala Jagadesh Kumar, Linga Reddy Cenkeramaddi:
    2D-simulation and analysis of lateral SiC N-emitter SiGe P-base Schottky metal-collector (NPM) HBT on SOI. 1145-1149
• 
  • 
  • 
  • 
  • 
    Xiang-Ti Meng, Ai-Guo Kang, Ji-Hong Li, Hai-Yun Zhang, Shi-Jie Yu, Zheng You:
    Effects of electron and gamma-ray irradiation on CMOS analog image sensors. 1151-1155
• 
  • 
  • 
  • 
  • 
    Timo Liukkonen, Aulis Tuominen:
    Decreasing variation in paste printing using statistical process control. 1157-1161
• 
  • 
  • 
  • 
  • 
    Haifeng Zhou, Zhenghui Lin, Wei Cao:
    ILP method for memory mapping in high-level synthesis. 1163-1167
• 
  • 
  • 
  • 
  • 
    Thomas D. Moore, John L. Jarvis:
    Erratum to "A simple and fundamental design rule for resisting delamination in bimaterial structures" [Microelectronics Reliability 2003;43: 487-494]. 1169
• 
  • 
  • 
  • 
  • 
    Mile K. Stojcev:
    Rohit Kapur, CTL for Test Information of Digital ICs Hardcover. Kluwer Academic Publisher, Boston, 2003. pp 173, plus XI, ISBN 1-4020-7293-7. 1171-1172

Volume 43, Number 8, August 2003

• 
  • 
  • 
  • 
  • 
    Gérard Ghibaudo, E. Vincent:
    Guest Editorial. 1173
• 
  • 
  • 
  • 
  • 
    Ernest Y. Wu, Jordi Suñé, Wing L. Lai, Alex Vayshenker, Edward J. Nowak, David L. Harmon:
    Critical reliability challenges in scaling SiO2-based dielectric to its limit. 1175-1184
• 
  • 
  • 
  • 
  • 
    Jordi Suñé, Ernest Y. Wu, David Jiménez, Wing L. Lai:
    Statistics of soft and hard breakdown in thin SiO2 gate oxides. 1185-1192
• 
  • 
  • 
  • 
  • 
    James H. Stathis, Rosana Rodríguez, Barry P. Linder:
    Circuit implications of gate oxide breakdown. 1193-1197
• 
  • 
  • 
  • 
  • 
    Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo:
    On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. 1199-1202
• 
  • 
  • 
  • 
  • 
    Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich:
    Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. 1203-1209
• 
  • 
  • 
  • 
  • 
    G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard:
    New insights into the change of voltage acceleration and temperature activation of oxide breakdown. 1211-1214
• 
  • 
  • 
  • 
  • 
    Andreas Martin, Jochen von Hagen, Glenn B. Alers:
    Ramped current stress for fast and reliable wafer level reliability monitoring of thin gate oxide reliability. 1215-1220
• 
  • 
  • 
  • 
  • 
    G. Ghidini, A. Garavaglia, G. Giusto, Andrea Ghetti, R. Bottini, D. Peschiaroli, M. Scaravaggi, F. Cazzaniga, Daniele Ielmini:
    Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET. 1221-1227
• 
  • 
  • 
  • 
  • 
    Andrea Ghetti, D. Brazzelli, A. Benvenuti, G. Ghidini, Alessia Pavan:
    Anomalous gate oxide conduction on isolation edges: analysis and process optimization. 1229-1235
• 
  • 
  • 
  • 
  • 
    C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent:
    MIM capacitance variation under electrical stress. 1237-1240
• 
  • 
  • 
  • 
  • 
    Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent:
    Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. 1241-1246
• 
  • 
  • 
  • 
  • 
    S. Cimino, Andrea Cester, Alessandro Paccagnella, G. Ghidini:
    Ionising radiation effects on MOSFET drain current. 1247-1251
• 
  • 
  • 
  • 
  • 
    Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
    Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors. 1253-1257
• 
  • 
  • 
  • 
  • 
    F. Mondon, S. Blonkowski:
    Electrical characterisation and reliability of HfO2 and Al2O3-HfO2 MIM capacitors. 1259-1266
• 
  • 
  • 
  • 
  • 
    Kenji Takahashi, Mitsuo Umemoto, Naotaka Tanaka, Kazumasa Tanida, Yoshihiko Nemoto, Yoshihiro Tomita, Masamoto Tago, Manabu Bonkohara:
    Ultra-high-density interconnection technology of three-dimensional packaging. 1267-1279
• 
  • 
  • 
  • 
  • 
    Rodolfo Zolá García-Lozano, Magali Estrada, Antonio Cerdeira:
    Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si: H layers. 1281-1287
• 
  • 
  • 
  • 
  • 
    K. L. Ng, Nian Zhan, Chi-Wah Kok, M. C. Poon, Hei Wong:
    Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing. 1289-1293
• 
  • 
  • 
  • 
  • 
    I-Cheng Lin, Chih-Yao Huang, Chuan-Jane Chao, Ming-Dou Ker:
    Anomalous latchup failure induced by on-chip ESD protection circuit in a high-voltage CMOS IC product. 1295-1301
• 
  • 
  • 
  • 
  • 
    J. H. Zhang, Yan Cheong Chan, M. O. Alam, S. Fu:
    Contact resistance and adhesion performance of ACF interconnections to aluminum metallization. 1303-1310
• 
  • 
  • 
  • 
  • 
    Y. S. Zheng, Y. J. Su, B. Yu, P. D. Foo:
    Investigation of defect on copper bond pad surface in copper/low k process integration. 1311-1316
• 
  • 
  • 
  • 
  • 
    N. Duan, J. Scheer, J. Bielen, M. van Kleef:
    The influence of Sn-Cu-Ni(Au) and Sn-Au intermetallic compounds on the solder joint reliability of flip chips on low temperature co-fired ceramic substrates. 1317-1327
• 
  • 
  • 
  • 
  • 
    Tong Yan Tee, Hun Shen Ng, Daniel Yap, Zhaowei Zhong:
    Comprehensive board-level solder joint reliability modeling and testing of QFN and PowerQFN packages. 1329-1338
• 
  • 
  • 
  • 
  • 
    Li-Rong Zheng, Johan Liu:
    System-on-package: a broad perspective from system design to technology development. 1339-1348
• 
  • 
  • 
  • 
  • 
    Wen Lea Pearn, Ming-Hung Shu:
    Erratum to "An algorithm for calculating the lower confidence bounds of CPU and CPL with application to low-drop-out linear regulators" [Microelectronics Reliability 2003;43: 495-502]. 1349

Volume 43, Numbers 9-11, September - November 2003

14th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

• 
  • 
  • 
  • 
  • 
    Nathalie Labat, André Touboul:
    Editorial. 1351-1352
• 
  • 
  • 
  • 
  • 
    James H. Stathis, Barry P. Linder, Rosana Rodríguez, Salvatore Lombardo:
    Reliability of ultra-thin oxides in CMOS circuits. 1353-1360
• 
  • 
  • 
  • 
  • 
    D. Dufourt, J. L. Pelloie:
    SOI design challenges. 1361-1367
• 
  • 
  • 
  • 
  • 
    Lawrence C. Wagner:
    Trends in Failure Analysis. 1369-1375
• 
  • 
  • 
  • 
  • 
    A. Andreini, C. Neva, L. Renard, G. Sironi, F. Speroni, Luca Sponton, F. Tampellini, R. Tiziani:
    Pad Over Active (POA) solutions for three metal level BCD5 mixed power process - Design and validation of ESD protections. 1377-1382
• 
  • 
  • 
  • 
  • 
    Thomas Nirschl, M. Ostermayr, A. Olbrich, D. Vietzke, M. Omer, Carsten Linnenbank, U. Schaper, Y. Pottgiesser, Jan Pottgiesser, M. Johansson:
    MALTY--A memory test structure for analysis in the early phase of the technology development. 1383-1387
• 
  • 
  • 
  • 
  • 
    G. Aichmayr:
    Correlation of gate oxide reliability and product tests on leading edge DRAM technology. 1389-1393
• 
  • 
  • 
  • 
  • 
    A. Aal:
    A procedure for reliability control and optimization of mixed-signal smart power CMOS pocesses. 1395-1400
• 
  • 
  • 
  • 
  • 
    P. Charpenel, F. Davenel, R. Digout, M. Giraudeau, M. Glade, J. P. Guerveno, N. Guillet, A. Lauriac, S. Male, D. Manteigas:
    The right way to assess electronic system reliability: FIDES. 1401-1404
• 
  • 
  • 
  • 
  • 
    Yong-Ha Song, S. G. Kim, S. B. Lee, K. J. Rhee, T. S. Kim:
    A study of considering the reliability issues on ASIC/Memory integration by SIP (System-in-Package) technology. 1405-1410
• 
  • 
  • 
  • 
  • 
    G. Cassanelli, Fausto Fantini, G. Serra, S. Sgatti:
    Reliability in automotive electronics: a case study applied to diesel engine control. 1411-1416
• 
  • 
  • 
  • 
  • 
    Gerald Lucovsky:
    Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects. 1417-1426
• 
  • 
  • 
  • 
  • 
    Jong Tae Park, Nag Jong Choi, Chong-Gun Yu, Seok Hee Jeon, Jean-Pierre Colinge:
    Increased hot carrier effects in Gate-All-Around SOI nMOSFET's. 1427-1432
• 
  • 
  • 
  • 
  • 
    M. Fadlallah, C. Petit, A. Meinertzhagen, Gérard Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader:
    Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices. 1433-1438
• 
  • 
  • 
  • 
  • 
    Rosana Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang:
    Influence and model of gate oxide breakdown on CMOS inverters. 1439-1444
• 
  • 
  • 
  • 
  • 
    François Lime, Gérard Ghibaudo, B. Guillaumot:
    Charge trapping in SiO2/HfO2/TiN gate stack. 1445-1448
• 
  • 
  • 
  • 
  • 
    Yuan Li, Klaas Jelle Veenstra, Jérôme Dubois, Lei Peters-Wu, Agnes van Zomeren, Fred G. Kuper:
    Reservoir effect and maximum allowed VIA misalignment for AlCu interconnect with tungsten VIA plug. 1449-1454
• 
  • 
  • 
  • 
  • 
    Snezana Djoric-Veljkovic, Ivica Manic, Vojkan Davidovic, Snezana Golubovic, Ninoslav Stojadinovic:
    Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs. 1455-1460
• 
  • 
  • 
  • 
  • 
    Young Pil Kim, U-In Chung, Joo Tae Moon, Sang U. Kim:
    Electrical analysis of DRAM cell transistors for the root-cause addressing of the tRDL time-delay failure. 1461-1464
• 
  • 
  • 
  • 
  • 
    Werner Frammelsberger, Guenther Benstetter, Thomas Schweinböck, Richard J. Stamp, Janice Kiely:
    Characterization of thin and ultra-thin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy. 1465-1470
• 
  • 
  • 
  • 
  • 
    Kin Leong Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang, W. H. Lin:
    Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. 1471-1476
• 
  • 
  • 
  • 
  • 
    Se Re Na Yun, Won Sub Park, Byung Ha Lee, Jong Tae Park:
    Hot electron induced punchthrough voltage of p-channel SOI MOSFET's at room and elevated temperatures. 1477-1482
• 
  • 
  • 
  • 
  • 
    Stefano Aresu, Ward De Ceuninck, G. Knuyt, J. Mertens, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger, Jan D'Haen:
    A new method for the analysis of high-resolution SILC data. 1483-1488
• 
  • 
  • 
  • 
  • 
    Damien Zander, F. Saigné, A. Meinertzhagen, Christian Petit:
    Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices. 1489-1493
• 
  • 
  • 
  • 
  • 
    Andreas Gehring, Francisco Jimenez-Molinos, Hans Kosina, A. Palma, F. Gámiz, Siegfried Selberherr:
    Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices. 1495-1500
• 
  • 
  • 
  • 
  • 
    Marc Porti, Montserrat Nafría, Xavier Aymerich:
    Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. 1501-1505
• 
  • 
  • 
  • 
  • 
    Joachim C. Reiner:
    Pre-breakdown leakage current fluctuations of thin gate oxide. 1507-1512
• 
  • 
  • 
  • 
  • 
    B. Mongellaz, François Marc, Yves Danto:
    Ageing simulation of MOSFET circuit using a VHDL-AMS behavioural modelling: an experimental case study. 1513-1518
• 
  • 
  • 
  • 
  • 
    D. Faure, D. Bru, C. Ali, C. Giret, K. Christensen:
    Gate oxide breakdown characterization on 0.13mum CMOS technology. 1519-1523
• 
  • 
  • 
  • 
  • 
    Jan Ackaert, Klara Bessemans, Eddy De Backer:
    Charging induced damage by photoconduction through thick inter metal dielectrics. 1525-1529
• 
  • 
  • 
  • 
  • 
    Hamid Toutah, Boubekeur Tala-Ighil, Jean-François Llibre, Bertrand Boudart, Taieb Mohammed-Brahim, Olivier Bonnaud:
    Degradation in polysilicon thin film transistors related to the quality of the polysilicon material. 1531-1535
• 
  • 
  • 
  • 
  • 
    S. Trinh, Markus P. J. Mergens, Koen G. Verhaege, Christian C. Russ, John Armer, Phillip Jozwiak, Bart Keppens, Russ Mohn, G. Taylor, Frederic De Ranter:
    Multi-finger turn-on circuits and design techniques for enhanced ESD performance and width scaling. 1537-1543
• 
  • 
  • 
  • 
  • 
    Masashi Hayashi, Shinji Nakano, Tetsuaki Wada:
    Dependence of copper interconnect electromigration phenomenon on barrier metal materials. 1545-1550
• 
  • 
  • 
  • 
  • 
    M. Zecri, P. Besse, Philippe Givelin, M. Nayrolles, Marise Bafleur, Nicolas Nolhier:
    Determination of the ESD Failure Cause Through its Signature. 1551-1556
• 
  • 
  • 
  • 
  • 
    Viktor Dubec, Sergey Bychikhin, M. Blaho, Dionyz Pogany, Erich Gornik, J. Willemen, Ning Qu, Wolfgang Wilkening, L. Zullino, A. Andreini:
    A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress. 1557-1561
• 
  • 
  • 
  • 
  • 
    Abdellatif Firiti, D. Faujour, Gérald Haller, J. M. Moragues, Vincent Goubier, Philippe Perdu, Felix Beaudoin, Dean Lewis:
    Short defect characterization based on TCR parameter extraction. 1563-1568
• 
  • 
  • 
  • 
  • 
    M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper:
    Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategy. 1569-1575
• 
  • 
  • 
  • 
  • 
    Thomas Beauchêne, David Trémouilles, Dean Lewis, Philippe Perdu, Pascal Fouillat:
    Characterization of ESD induced defects using Photovoltaic Laser Stimulation (PLS). 1577-1582
• 
  • 
  • 
  • 
  • 
    Wen-Yu Lo, Ming-Dou Ker:
    Analysis and Prevention on NC-ball induced ESD Damages in a 683-Pin BGA Packaged Chipset IC. 1583-1588
• 
  • 
  • 
  • 
  • 
    Gaudenzio Meneghesso, N. Novembre, Enrico Zanoni, Luca Sponton, Lorenzo Cerati, Giuseppe Croce:
    Optimization of ESD protection structures suitable for BCD6 smart power technology. 1589-1594
• 
  • 
  • 
  • 
  • 
    J. C. H. Phang, D. S. H. Chan, V. K. S. Ong, S. Kolachina, J. M. Chin, M. Palaniappan, G. Gilfeather, Y. X. Seah:
    Single contact beam induced current phenomenon for microelectronic failure analysis. 1595-1602
• 
  • 
  • 
  • 
  • 
    Franco Stellari, Peilin Song, Moyra K. McManus, Alan J. Weger, Robert Gauthier, Kiran V. Chatty, Mujahid Muhammad, Pia N. Sanda, Philip Wu, Steven C. Wilson:
    Latchup Analysis Using Emission Microscopy. 1603-1608
• 
  • 
  • 
  • 
  • 
    Stefan Dilhaire, M. Amine Salhi, Stéphane Grauby, Wilfrid Claeys:
    Laser Seebeck Effect Imaging (SEI) and Peltier Effect Imaging (PEI): complementary investigation methods. 1609-1613
• 
  • 
  • 
  • 
  • 
    Frédéric Darracq, Hervé Lapuyade, Nadine Buard, Pascal Fouillat, R. Dufayel, Thierry Carrière:
    Low-cost backside laser test method to pre-characterize the COTS IC's sensitivity to Single Event Effects. 1615-1619
• 
  • 
  • 
  • 
  • 
    P. LeCoupanec, William K. Lo, Keneth R. Wilsher:
    An ultra-low dark-count and jitter, superconducting, single-photon detector for emission timing analysis of integrated circuits. 1621-1626
• 
  • 
  • 
  • 
  • 
    Katsuyoshi Miura, Tomoyuki Kobatake, Koji Nakamae, Hiromu Fujioka:
    A low energy FIB processing, repair, and test system. 1627-1631
• 
  • 
  • 
  • 
  • 
    Frank Seifert, Rainer Weber, Wolfgang Mertin, Erich Kubalek:
    A new technique for contactless current contrast imaging of high frequency signals. 1633-1638
• 
  • 
  • 
  • 
  • 
    Mustapha Remmach, Romain Desplats, Felix Beaudoin, E. Frances, Philippe Perdu, Dean Lewis:
    Time Resolved Photoemission (PICA) - From the Physics to Practical Considerations. 1639-1644
• 
  • 
  • 
  • 
  • 
    Hervé Deslandes, Ted R. Lundquist:
    Limitations to photon-emission microscopy when applied to "hot" devices. 1645-1650
• 
  • 
  • 
  • 
  • 
    Maria Stangoni, Mauro Ciappa, Wolfgang Fichtner:
    A New Procedure to Define the Zero-Field Condition and to Delineate pn-Junctions in Silicon Devices by Scanning Capacitance Microscopy. 1651-1656
• 
  • 
  • 
  • 
  • 
    Lee A. Knauss, Antonio Orozco, Solomon I. Woods, Alfred B. Cawthorne:
    Advances in scanning SQUID microscopy for die-level and package-level fault isolation. 1657-1662
• 
  • 
  • 
  • 
  • 
    Romain Desplats, A. Eral, Felix Beaudoin, Philippe Perdu, Alan J. Weger, Moyra K. McManus, Peilin Song, Franco Stellari:
    Faster IC Analysis with PICA Spatial Temporal Photon Correlation and CAD Autochanneling. 1663-1668
• 
  • 
  • 
  • 
  • 
    Alberto Tosi, Franco Stellari, Franco Zappa, Sergio Cova:
    Backside Flip-Chip testing by means of high-bandwidth luminescence detection. 1669-1674
• 
  • 
  • 
  • 
  • 
    B. Simmnacher, R. Weiland, J. Höhne, F. v. Feilitzsch, C. Hollerith:
    Semiconductor material analysis based on microcalorimeter EDS. 1675-1680
• 
  • 
  • 
  • 
  • 
    Felix Beaudoin, Romain Desplats, Philippe Perdu, Abdellatif Firiti, Gérald Haller, Vincent Pouget, Dean Lewis:
    From Static Thermal and Photoelectric Laser Stimulation (TLS/PLS) to Dynamic Laser Testing. 1681-1686
• 
  • 
  • 
  • 
  • 
    Jon C. Lee, J. H. Chuang:
    A Novel Application of C-AFM: Deep Sub-micron Single Probing for IC Failure Analysis. 1687-1692
• 
  • 
  • 
  • 
  • 
    Paul-Henri Albarède, S. Lavagne, C. Grosjean:
    Strain investigation around shallow trench isolations : a LACBED Study. 1693-1698
• 
  • 
  • 
  • 
  • 
    N. Lucarelli, M. Cavone, Michele Muschitiello, D. Centrone, F. Corsi:
    Thermally Induced Voltage Alteration (TIVA) applied to ESD induced failures. 1699-1704
• 
  • 
  • 
  • 
  • 
    Sylvain L. Delage, Christian Dua:
    Wide band gap semiconductor reliability : Status and trends. 1705-1712
• 
  • 
  • 
  • 
  • 
    Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren:
    Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. 1713-1718
• 
  • 
  • 
  • 
  • 
    J. Kuchenbecker, Mattia Borgarino, M. Zeuner, U. König, Robert Plana, Fausto Fantini:
    High Electric Field Induced Degradation of the DC Characteristics in Si/SiGe HEMT's. 1719-1723
• 
  • 
  • 
  • 
  • 
    J. C. Martin, Cristell Maneux, Nathalie Labat, André Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin:
    1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. 1725-1730
• 
  • 
  • 
  • 
  • 
    Mohamed Belhaj, Cristell Maneux, Nathalie Labat, André Touboul, Philippe Bove:
    High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. 1731-1736
• 
  • 
  • 
  • 
  • 
    Gaudenzio Meneghesso, S. Levada, Enrico Zanoni, Gaetano Scamarcio, Giovanna Mura, Simona Podda, Massimo Vanzi, S. Du, I. Eliashevich:
    Reliability of visible GaN LEDs in plastic package. 1737-1742
• 
  • 
  • 
  • 
  • 
    Laurent Mendizabal, Jean-Louis Verneuil, Laurent Béchou, Christelle Aupetit-Berthelemot, Yannick Deshayes, Frédéric Verdier, Jean-Michel Dumas, Yves Danto, Dominique Laffitte, Jean-Luc Goudard:
    Impact of 1.55 mum laser diode degradation laws on fibre optic system performances using a system simulator. 1743-1749
• 
  • 
  • 
  • 
  • 
    J. Van de Casteele, Dominique Laffitte, G. Gelly, C. Starck, M. Bettiati:
    High reliability level demonstrated on 980nm laser diode. 1751-1754
• 
  • 
  • 
  • 
  • 
    Kevin Sanchez, Romain Desplats, Guy Perez, V. Pichetto, Felix Beaudoin, Philippe Perdu:
    Solar Cell Analysis with Light Emission and OBIC Techniques. 1755-1760
• 
  • 
  • 
  • 
  • 
    C. Gautier, J. Périnet, E. Nissou, Dominique Laffitte:
    New method of qualification applied to optical amplifier with electronics. 1761-1766
• 
  • 
  • 
  • 
  • 
    Jean-Luc Goudard, X. Boddaert, J. Périnet, Dominique Laffitte:
    Reliability of optoelectronics components: towards new qualification practices. 1767-1769
• 
  • 
  • 
  • 
  • 
    Giovanna Mura, Massimo Vanzi, Maria Stangoni, Mauro Ciappa, Wolfgang Fichtner:
    On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices. 1771-1776
• 
  • 
  • 
  • 
  • 
    G. Q. Zhang:
    The challenges of virtual prototyping and qualification for future microelectronics. 1777-1783
• 
  • 
  • 
  • 
  • 
    Philippe Soussan, G. Lekens, R. Dreesen, Ward De Ceuninck, Eric Beyne:
    Advantage of In-situ over Ex-situ techniques as reliability tool: Aging kinetics of Imec's MCM-D discrete passives devices. 1785-1790
• 
  • 
  • 
  • 
  • 
    P. Tropea, Aïssa Mellal, John Botsis:
    Deformation and damage of a solder-copper joint. 1791-1796
• 
  • 
  • 
  • 
  • 
    Alton B. Horsfall, Joyce M. M. dos Santos, S. M. Soare, Nicholas G. Wright, A. G. O'Neill, Steve J. Bull, Anthony J. Walton, Alan M. Gundlach, J. T. M. Stevenson:
    Direct measurement of residual stress in integrated circuit interconnect features. 1797-1801
• 
  • 
  • 
  • 
  • 
    G. Andriamonje, Vincent Pouget, Yves Ousten, Dean Lewis, Yves Danto, Jean-Michel Rampnoux, Younès Ezzahri, Stefan Dilhaire, Stéphane Grauby, Wilfrid Claeys:
    Application of Picosecond Ultrasonics to Non-Destructive Analysis in VLSI circuits. 1803-1807
• 
  • 
  • 
  • 
  • 
    Olivier Crépel, Romain Desplats, Y. Bouttement, Philippe Perdu, C. Goupil, Philippe Descamps, Felix Beaudoin, L. Marina:
    Magnetic emission mapping for passive integrated components characterisation. 1809-1814
• 
  • 
  • 
  • 
  • 
    P. Rajamand, Rainer Tilgner, Roland Schmidt, J. Baumann, P. Klofac, M. Rothenfusser:
    Investigation of delaminations during thermal stress: scanning acoustic microscopy covering low and high temperatures. 1815-1820
• 
  • 
  • 
  • 
  • 
    David Dalleau, Kirsten Weide-Zaage, Yves Danto:
    Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures. 1821-1826
• 
  • 
  • 
  • 
  • 
    Michael Krüger, Jörg C. Krinke, K. Ritter, B. Zierle, M. Weber:
    Laser-assisted decapsulation of plastic-encapsulated devices. 1827-1831
• 
  • 
  • 
  • 
  • 
    Guy Lefranc, Brigitte Weiss, Christof Klos, J. Dick, Golta Khatibi, H. Berg:
    Aluminum bond-wire properties after 1 billion mechanical cycles. 1833-1838
• 
  • 
  • 
  • 
  • 
    Werner Kanert, H. Dettmer, Boris Plikat, Norbert Seliger:
    Reliability aspects of semiconductor devices in high temperature applications. 1839-1846
• 
  • 
  • 
  • 
  • 
    Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina:
    Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. 1847-1851
• 
  • 
  • 
  • 
  • 
    Alexandrine Guédon, Eric Woirgard, Christian Zardini, Guillaume Simon:
    Methodology to evaluate the correspondence between real conditions and accelerated tests of a thyristor system used in a power plant. 1853-1858
• 
  • 
  • 
  • 
  • 
    E. Hornung, Uwe Scheuermann:
    Reliability of low current electrical spring contacts in power modules. 1859-1864
• 
  • 
  • 
  • 
  • 
    Yannick Rey-Tauriac, Olivier de Sagazan, M. Taurin, Olivier Bonnaud:
    Robustness improvement of VDMOS transistors in Bipolar/CMOS/DMOS technology. 1865-1869
• 
  • 
  • 
  • 
  • 
    Gerard Coquery, Guy Lefranc, T. Licht, Richard Lallemand, Norbert Seliger, H. Berg:
    High temperature reliability on automotive power modules verified by power cycling tests up to 150degreeC. 1871-1876
• 
  • 
  • 
  • 
  • 
    Alberto Castellazzi, V. Kartal, R. Kraus, Norbert Seliger, Martin Honsberg-Riedl, Doris Schmitt-Landsiedel:
    Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET's. 1877-1882
• 
  • 
  • 
  • 
  • 
    J. Vobecký, Pavel Hazdra:
    Advanced Local Lifetime Control for Higher Reliability of Power Devices. 1883-1888
• 
  • 
  • 
  • 
  • 
    Tesfaye Ayalew, Andreas Gehring, Jong Mun Park, Tibor Grasser, Siegfried Selberherr:
    Improving SiC lateral DMOSFET reliability under high field stress. 1889-1894
• 
  • 
  • 
  • 
  • 
    A. Icaza Deckelmann, Gerhard K. M. Wachutka, Franz Hirler, J. Krumrey, R. Henninger:
    Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation. 1895-1900
• 
  • 
  • 
  • 
  • 
    Stephane Azzopardi, Eric Woirgard, Jean-Michel Vinassa, Olivier Briat, Christian Zardini:
    IGBT Power modules thermal characterization : what is the optimum between a low current - high voltage or a high current - low voltage test condition for the same electrical power? 1901-1906
• 
  • 
  • 
  • 
  • 
    Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, M. Valentino, Giampiero Pepe:
    Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement. 1907-1912
• 
  • 
  • 
  • 
  • 
    K. I. Nuttall, Octavian Buiu, V. V. N. Obreja:
    Surface leakage current related failure of power silicon devices operated at high junction temperature. 1913-1918
• 
  • 
  • 
  • 
  • 
    Lionel Buchaillot:
    Feedback of MEMS reliability study on the design stage: a step toward Reliability Aided Design (RAD). 1919-1928
• 
  • 
  • 
  • 
  • 
    Cezary Sydlo, Kabula Mutamba, L. Divac Krnic, Bastian Mottet, Hans L. Hartnagel:
    Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress. 1929-1933
• 
  • 
  • 
  • 
  • 
    I. Boyer Heard, R. Coquillé, D. Rivière, P.-Y. Klimonda:
    Characterization and reliability of a switch matrix based on MOEMS technology. 1935-1937
• 
  • 
  • 
  • 
  • 
    Angie Tetelin, Claude Pellet, Jean-Yves Delétage, B. Carbonne, Yves Danto:
    Moisture diffusion in BCB resins used for MEMS packaging. 1939-1944
• 
  • 
  • 
  • 
  • 
    Sylvaine Muratet, Jean-Yves Fourniols, Georges Soto-Romero, Aitor Endemaño Isasi, Antoine Marty, Marc P. Y. Desmulliez:
    MEMS reliability modelling methodology: application to wobble micromotor failure analysis. 1945-1949
• 
  • 
  • 
  • 
  • 
    Guillaume Marinier, Stefan Dilhaire, Luis David Patiño Lopez, Mohamed Benzohra:
    Determination of passive SiO2-Au microstructure resonant frequencies. 1951-1955
• 
  • 
  • 
  • 
  • 
    Petra Schmitt, Francis Pressecq, Xavier Lafontan, Q.-H. Duong, Patrick Pons, Jean Marc Nicot, Coumar Oudéa, Daniel Estève, Jean-Yves Fourniols, Henri Camon:
    Application of MEMS behavioral simulation to Physics of Failure (PoF) modeling. 1957-1962
• 
  • 
  • 
  • 
  • 
    Sebastien Rigo, Phillippe Goudeau, Jean-Michel Desmarres, Talal Masri, Jacques-Alain Petit, Petra Schmitt:
    Correlation between X-ray micro-diffraction and a developed analytical model to measure the residual stresses in suspended structures in MEMS. 1963-1968

Volume 43, Number 12, December 2003

• 
  • 
  • 
  • 
  • 
    Clemens J. M. Lasance:
    Thermally driven reliability issues in microelectronic systems: status-quo and challenges. 1969-1974
• 
  • 
  • 
  • 
  • 
    Glenn A. Rinne:
    Issues in accelerated electromigration of solder bumps. 1975-1980
• 
  • 
  • 
  • 
  • 
    Hongguo Zhang, Pant Gurang, Nihdi Sigh, Quvdo Manuel, Robert M. Wallace, Bruce Gnade, Kevin Stokes:
    The effect of small-signal AC voltages on C-V characterization and parameter extraction of SiO2 thin films. 1981-1985
• 
  • 
  • 
  • 
  • 
    X. A. Cao, P. M. Sandvik, S. F. LeBoeuf, S. D. Arthur:
    Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses. 1987-1991
• 
  • 
  • 
  • 
  • 
    Y. S. Roh, A. Asiz, W. P. Zhang, Yunping Xi:
    Experimental study and theoretical prediction of aging induced frequency shift of crystal resonators and oscillators. 1993-2000
• 
  • 
  • 
  • 
  • 
    Han-Chang Tsai:
    Reliable study of digital IC circuits with margin voltage among variable DC power supply, electromagnetic interference and conducting wire antenna. 2001-2009
• 
  • 
  • 
  • 
  • 
    W. Dauksher, W. S. Burton:
    An examination of the applicability of the DNP metric on first level reliability assessments in underfilled electronic packages. 2011-2020
• 
  • 
  • 
  • 
  • 
    Hua Ye, Douglas C. Hopkins, Cemal Basaran:
    Measurement of high electrical current density effects in solder joints. 2021-2029
• 
  • 
  • 
  • 
  • 
    M. N. Islam, Yan Cheong Chan, Ahmed Sharif, M. O. Alam:
    Comparative study of the dissolution kinetics of electrolytic Ni and electroless Ni-P by the molten Sn3.5Ag0.5Cu solder alloy. 2031-2037
• 
  • 
  • 
  • 
  • 
    Y. F. Yao, T. Y. Lin, K. H. Chua:
    Improving the deflection of wire bonds in stacked chip scale package (CSP). 2039-2045
• 
  • 
  • 
  • 
  • 
    Insu Jeon, Qwanho Chung:
    The study on failure mechanisms of bond pad metal peeling: Part A--Experimental investigation. 2047-2054
• 
  • 
  • 
  • 
  • 
    Insu Jeon:
    The study on failure mechanisms of bond pad metal peeling: Part B--Numerical analysis. 2055-2064
• 
  • 
  • 
  • 
  • 
    Kazuto Nishida, Kazumichi Shimizu, Michiro Yoshino, Hideo Koguchi, Nipon Taweejun:
    Reliability evaluation of ultra-thin CSP using new flip-chip bonding technology--double-sided CSP and single-sided CSP. 2065-2075
• 
  • 
  • 
  • 
  • 
    Mohammad Yunus, K. Srihari, James M. Pitarresi, Anthony Primavera:
    Effect of voids on the reliability of BGA/CSP solder joints. 2077-2086
• 
  • 
  • 
  • 
  • 
    Ee-Hua Wong, Ranjan Rajoo:
    Moisture absorption and diffusion characterisation of packaging materials--advanced treatment. 2087-2096

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.

Unpaywalled article links

Add open access links from to the list of external document links (if available).

load links from unpaywall.org

Privacy notice: By enabling the option above, your browser will contact the API of unpaywall.org to load hyperlinks to open access articles. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Unpaywall privacy policy.

Archived links via Wayback Machine

For web page which are no longer available, try to retrieve content from the of the Internet Archive (if available).

load content from archive.org

Privacy notice: By enabling the option above, your browser will contact the API of archive.org to check for archived content of web pages that are no longer available. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Internet Archive privacy policy.

Reference lists

Add a list of references from , , and to record detail pages.

load references from crossref.org and opencitations.net

Privacy notice: By enabling the option above, your browser will contact the APIs of crossref.org, opencitations.net, and semanticscholar.org to load article reference information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Crossref privacy policy and the OpenCitations privacy policy, as well as the AI2 Privacy Policy covering Semantic Scholar.

Citation data

Add a list of citing articles from and to record detail pages.

load citations from opencitations.net

Privacy notice: By enabling the option above, your browser will contact the API of opencitations.net and semanticscholar.org to load citation information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the OpenCitations privacy policy as well as the AI2 Privacy Policy covering Semantic Scholar.

OpenAlex data

Load additional information about publications from .

load data from openalex.org

Privacy notice: By enabling the option above, your browser will contact the API of openalex.org to load additional information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the information given by OpenAlex.

dblp was originally created in 1993 at:

since 2018, dblp has been operated and maintained by: