dblp: Dongwoo Kim 0005 (original) (raw)

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• > Home > Persons

Person information

• affiliation: POSTECH, Power Analog Electronics & Semiconductor Devices Lab, Pohang, Republic of Korea

Other persons with the same name

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• Dongwoo Kim (aka: Dong-Woo Kim, Dong Woo Kim) — disambiguation page

• Dongwoo Kim 0001 — Hanyang University, ERICA, Department of Electronics and Communication Engineering, Ansan, South Korea (and 1 more)

• Dongwoo Kim 0002 (aka: Dong Woo Kim 0002) — POSTECH, Pohang, South Korea (and 2 more)

• Dongwoo Kim 0003 — Western Digital Technologies Inc., Milpitas, CA, USA (and 1 more)

• Dongwoo Kim 0004 — Chungnam National University, Daejeon, South Korea

• Dongwoo Kim 0006 — Microsoft

• Dongwoo Kim 0007 — Korea Advanced Institute of Science and Technology, School of Digital Humanities and Computational Social Sciences, Daejeon, South Korea (and 1 more)

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2010 – 2019

• 2017
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  [j4]
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    Giyoun Roh, Hyeokjin Kim, Cheolgyu Kim, Dongwoo Kim, Bongkoo Kang:
    Fast and accurate method of lifetime estimation for HfSiON/SiO2 dielectric n-MOSFETs under positive bias temperature instability. Microelectron. Reliab. 72: 98-102 (2017)
• 2012
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    Dongwoo Kim, Seonhaeng Lee, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
    Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress. Microelectron. Reliab. 52(9-10): 1901-1904 (2012)
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  [j2]
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    Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, N.-H. Lee, Gang-Jun Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
    Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs. Microelectron. Reliab. 52(9-10): 1905-1908 (2012)
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    Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
    Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs. Microelectron. Reliab. 52(9-10): 1949-1952 (2012)

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