High-efficiency two-dimensional Ruddlesden–Popper perovskite solar cells (original) (raw)
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Acknowledgements
This work at LANL was LANL LDRD programme (A.D.M., G.G., J.-C.B. and S.T.). Work at Northwestern University was supported as part of the ANSER Center, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, under Award No. DE-SC0001059. Use of the Advanced Photon Source at Argonne National Laboratory was supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. Work at INSA de Rennes was performed using high-performance computational resources from the French national centres (GENCI/CINES/IDRIS grant 2015-c2012096724), Cellule Energie du CNRS (SOLHYBTRANS Project) and the University of Rennes 1 (Action Incitative,Défis Scientifique Emergents 2015). J.E.’s work is also supported by the Fondation d’entreprises banque Populaire de l’Ouest (Grant PEROPHOT 2015). The work at Purdue University was supported by the Bay Area PV Consortium (a Department of Energy project with Prime Award number DE-EE0004946). This work at LANL was done in part at the Center for Nonlinear Studies (CNLS) and the Center for Integrated Nanotechnologies (CINT). R.V. acknowledges the support of the NSF DMR-1352099.
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- Hsinhan Tsai and Wanyi Nie: These authors contributed equally to this work.
Authors and Affiliations
- Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, USA
Hsinhan Tsai, Wanyi Nie, Jean-Christophe Blancon, Amanda J. Neukirch, Jared J. Crochet, Sergei Tretiak, Gautam Gupta & Aditya D. Mohite - Department of Materials Science and Nanoengineering, Rice University, Houston, 77005, Texas, USA
Hsinhan Tsai, Rafael Verduzco, Jun Lou & Pulickel M. Ajayan - Department of Chemistry, Northwestern University, Evanston, 60208, Illinois, USA
Constantinos C. Stoumpos & Mercouri G. Kanatzidis - Department of Materials Science, Northwestern University, Evanston, 60208, Illinois, USA
Constantinos C. Stoumpos, Boris Harutyunyan, Michael J. Bedzyk & Mercouri G. Kanatzidis - Engineering and Argonne-Northwestern Solar Energy Research (ANSER) Center, Northwestern University, Evanston, 60208, Illinois, USA
Constantinos C. Stoumpos, Boris Harutyunyan, Michael J. Bedzyk & Mercouri G. Kanatzidis - School of Electrical and Computer Engineering, Purdue University, West Lafayette, 47907, Indiana, USA
Reza Asadpour & Muhammad A. Alam - Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, USA,
Rafael Verduzco - Fonctions Optiques pour les Technologies de l’Information, FOTON UMR 6082, CNRS, INSA de Rennes, Rennes, 35708, France
Laurent Pedesseau & Jacky Even
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- Hsinhan Tsai
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Contributions
A.D.M., H.T., W.N. and M.G.K. conceived the idea. H.T., W.N. and A.D.M. designed the experiments, analysed the data and wrote the paper. H.T. fabricated the devices along with W.N. and performed the measurements. J.-C.B. performed optical spectroscopy measurements and analysed the data under the supervision of J.J.C. C.C.S. synthesized the layered perovskites under the supervision of M.G.K. and co-wrote the paper. R.V. arranged the synchrotron experiments data, and B.H. and M.J.B. analysed and indexed the synchrotron XRD data along with M.G.K. J.E., G.G., L.P. and S.T. performed the molecular dynamics simulations. J.E. analysed the data and provided insight in writing the paper. G.G., J.L. and P.M.A. provided insights into the crystal growth of layered perovskites. R.A. and M.A.A. performed the device simulations. A.J.N. performed DFT calculations on layered perovskites under the supervision of S.T. All authors discussed the results and wrote the paper.
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Correspondence toAditya D. Mohite.
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Nature thanks H. Snaith and the other anonymous reviewer(s) for their contribution to the peer review of this work.
Extended data figures and tables
Extended Data Figure 1 Layered perovskite thin-film morphology and device performance.
a, b, AFM images of surface morphology for room-temperature-cast (a) and hot-cast (b) films. Scale bars, 400 nm. c, d, SEM images of topography for room-temperature-cast (c) and hot-cast (d) films. Scale bars, 1 μm. e, J_–_V curve of Pb4I13 with C60 as a contact modification candidate shows the enhancement of _V_OC from 0.9 V to 1.055 V with the same device architecture. f, J_–_V curve for the (BA)2(MA)3Pb4I13 device using the room-temperature (RT) spin-cast method. FF, fill factor.
Extended Data Figure 2 Absorption spectroscopy of layered 2D perovskites.
a–c, Local optical absorption characteristics of thin films using reflection/transmission experimental methods (see also refs 34, 35 for details of the modelling): results of the fitting of the reflection (R) and transmission (T) data (a); absolute absorption cross-section (b); and real (n; red line) and imaginary (k; black line) parts of the refractive index (c). d, Absorbance of thin films (grey circles) compared to that of optimized solar cells (red squares) measured using integrating sphere techniques (see details in ref. 36).
Extended Data Figure 3 DFT computation.
a, b, Electronic band structures of (BA)2PbI4 (n = 1; a) and (BA)2(MA)2Pb3I10 (n = 3; b) calculated using DFT with a local-density approximation, including the spin–orbit coupling and a bandgap correction computed using the HSE (Heyd–Scuseria–Ernzerhof) functional. The energy levels are referenced to the valence band maximum.
Extended Data Figure 4 Device performance of (BA)2(MA)2Pb3I10.
a, J_–_V curve and device parameters. b, EQE (red circles) and integrated _J_SC from EQE (blue dashed line).
Extended Data Figure 5 Dark current transient and mobility.
The dark current transient (Δ_J_/_J_0), measured using the CELIV technique, for a hot-cast (red) and a room-temperature-cast (‘As cast’, black) device, and the mobility value (μ) in each case.
Extended Data Figure 6 Device PCE as a function of thin-film thickness for the layered Pb4I13 perovskite.
Extended Data Figure 7 Hysteresis tests for 2D pervoskite devices.
a–d, Tests with different bias sweep directions (a; (C/_C_0)−2 as function of DC bias, where _C_0 is the capacitance of a geometric capacitor), and after 10 h (b), 1,000 h (c) and 2,250 h (d) of constant illumination. The red and blue arrows indicate the forward and reverse sweep directions.
Extended Data Figure 8 Simulation results and comparison of room-temperature-cast and hot-cast methods.
a, Experimental (‘Expr.’) J_–_V characteristics of room-temperature-cast (‘As cast’) and hot-cast methods and corresponding simulation (‘Sim.’) results. The hot-cast method shows a current density with a larger magnitude and higher fill factor (area below the J_–_V curve). b, Integrated recombination inside three layers of a solar cell. Peak recombination shifts toward the PCBM/perovskite interface because the barrier for generated carriers is less in the hot-cast case than in the room-temperature-cast case. c, d, Energy band diagram of hot-cast (c) and room-temperature-cast (d) methods. Generated carriers face a lower barrier in the hot-cast case, especially close to the PEDOT/perovskite interface. _E_C, conduction band; _E_V, valence band; _E_FN, electron quasi-Fermi level; _E_FP, hole quasi-Fermi level.
Extended Data Figure 9 Heat stress tests.
a, b, Spectra of 2D (a) and 3D (b) perovskite thin films under 80 °C in darkness after the lengths of time indicated (spectra are offset for clarity; ‘ref.’ refers to freshly made thin film, measured after 0 h of heat stressing). c, Ratio of the PbI2 (2_θ_ = 12.7°) and perovskite (2θ = 14.2°) main peaks in the spectra in a and b for the two perovskite materials (2D, blue; 3D, red) over 30 h of heating at 80 °C.
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Tsai, H., Nie, W., Blancon, JC. et al. High-efficiency two-dimensional Ruddlesden–Popper perovskite solar cells.Nature 536, 312–316 (2016). https://doi.org/10.1038/nature18306
- Received: 29 October 2015
- Accepted: 03 May 2016
- Published: 06 July 2016
- Issue Date: 18 August 2016
- DOI: https://doi.org/10.1038/nature18306