A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures (original) (raw)

Nature Materials volume 10, pages 625–630 (2011)Cite this article

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Abstract

Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO_x_-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 1012. Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

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Acknowledgements

The authors are grateful to SAIT colleagues Y. K. Cha, K. J. Park and C. Y. Moon for assistance in with experiments, G. S. Park for TEM analysis assistance and Kyunghee University’s K. R. Park for photograph imaging assistance.

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Authors and Affiliations

  1. Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi-do 446-712, Korea
    Myoung-Jae Lee, Chang Bum Lee, Dongsoo Lee, Seung Ryul Lee, Man Chang, Ji Hyun Hur, Young-Bae Kim, Chang-Jung Kim, David H. Seo, U-In Chung & In-Kyeong Yoo
  2. Department of Physics, Sejong University, Seoul 143-747, Korea
    Sunae Seo
  3. Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi-do 446-712, Korea
    Kinam Kim

Authors

  1. Myoung-Jae Lee
  2. Chang Bum Lee
  3. Dongsoo Lee
  4. Seung Ryul Lee
  5. Man Chang
  6. Ji Hyun Hur
  7. Young-Bae Kim
  8. Chang-Jung Kim
  9. David H. Seo
  10. Sunae Seo
  11. U-In Chung
  12. In-Kyeong Yoo
  13. Kinam Kim

Contributions

M-J.L., S.S., and D.H.S. designed this work and prepared the manuscript. The experiment and electrical measurements were carried out by M-J.L., C.B.L., D.L., S.R.L. and M.C. All authors discussed the results and implications and commented on the manuscript at all stages.

Corresponding authors

Correspondence toMyoung-Jae Lee or Chang-Jung Kim.

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The authors declare no competing financial interests.

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Lee, MJ., Lee, C., Lee, D. et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures.Nature Mater 10, 625–630 (2011). https://doi.org/10.1038/nmat3070

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