Polarized photocurrent response in black phosphorus field-effect transistors (original) (raw)
* Corresponding authors
a Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA
E-mail: yaqiong.xu@vanderbilt.edu
b Department of Physics and Astronomy, Wayne State University, Detroit, MI 48201, USA
E-mail: zxzhou@wayne.edu
c Center of Nanophase Materials Sciences, Oak Ridge National Laboratory, TN 37831, USA
E-mail: panm@ornl.gov
d Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, USA
Abstract
We investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements. Our results reveal that the photocurrent signals at BP-electrode junctions are mainly attributed to the photovoltaic effect in the off-state and photothermoelectric effect in the on-state, and their anisotropic feature primarily results from the directional-dependent absorption of BP crystals.
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Article information
DOI
https://doi.org/10.1039/C4NR02164A
Article type
Paper
Submitted
21 Apr 2014
Accepted
06 Jun 2014
First published
11 Jun 2014
Download Citation
Nanoscale, 2014,6, 8978-8983
Author version available
Permissions
Polarized photocurrent response in black phosphorus field-effect transistors
T. Hong, B. Chamlagain, W. Lin, H. Chuang, M. Pan, Z. Zhou and Y. Xu,Nanoscale, 2014, 6, 8978DOI: 10.1039/C4NR02164A
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