Ion beam synthesis of buried α‐FeSi2 and β‐FeSi2 layers (original) (raw)
Research Article| October 21 1991
Institut für Schicht‐ und Ionentechnik, Forschungszentrum Jülich, D‐5170 Jülich, Germany
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Institut für Schicht‐ und Ionentechnik, Forschungszentrum Jülich, D‐5170 Jülich, Germany
Search for other works by this author on:
Institut für Schicht‐ und Ionentechnik, Forschungszentrum Jülich, D‐5170 Jülich, Germany
Search for other works by this author on:
Institut für Schicht‐ und Ionentechnik, Forschungszentrum Jülich, D‐5170 Jülich, Germany
Search for other works by this author on:
Appl. Phys. Lett. 59, 2145–2147 (1991)
Using high dose implantation of Fe+ into (111)Si, followed by rapid thermal annealing (RTA) at 1150 °C for 10 s, we fabricated continuous buried layers of the metallic α‐FeSi2 phase. Rutherford backscattering experiments indicate that these layers contain a large number of Fe vacancies, up to 18%. By implanting through a SiO2 mask, we produced Schottky diodes with idealty factors of 1.4±0.1 and a Schottky barrier height of Φ_B_=0.84±0.03 eV on (111) _n_‐Si. In this letter we report for the first time the formation of the semiconducting stoichiometric FeSi2 (β‐FeSi2) phase by annealing the buried α‐FeSi2 layers below the phase transition temperature of 937 °C; specifically at 750 °C for 20 h.
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© 1991 American Institute of Physics.
1991
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