Large conductance switching and memory effects in organic molecules for data-storage applications (original) (raw)
Research Article| February 24 2003
Indian Association for the Cultivation of Science, Department of Solid State Physics, Jadavpur, Kolkata 700 032, India
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Indian Association for the Cultivation of Science, Department of Solid State Physics, Jadavpur, Kolkata 700 032, India
Search for other works by this author on:
Anirban Bandyopadhyay, Amlan J. Pal
Indian Association for the Cultivation of Science, Department of Solid State Physics, Jadavpur, Kolkata 700 032, India
Appl. Phys. Lett. 82, 1215–1217 (2003)
We have observed a large electrical conductance switching (ON:OFF ratio=105) in single-layer sandwich structures based on organic molecules at room temperature. The switching devices showed an associated memory effect for data-storage applications. We could write or erase a state and read it for many cycles. In switching devices, the active semiconductor retained its high conducting state until a reverse voltage erased it. A high conducting state arose due to restoration of conjugation in the molecule via electroreduction. Such a high ON–OFF ratio in a single layer sandwich structure, as compared to contemporary switching devices, is due to low off-state leakage current. The concept of conjugation restoration has been verified in supramolecular structures by adding donor groups to the molecule, which resulted in increased off-state current and hence lower ON–OFF ratio. Our work set a generalized example of selecting organic molecules to obtain higher ON–OFF ratio in molecular switching devices.
REFERENCES
W.
Brütting
,
S.
Berleb
, and
A. G.
Mückl
,
Org. Electron.
2
,
1
(
2001
).
R. H.
Friend
,
R. W.
Gymer
,
A. B.
Holmes
,
J. H.
Burroughes
,
R. N.
Marks
,
C.
Taliani
,
D. D. C.
Bradley
,
D. A.
Dos Santos
,
J. L.
Brédas
,
M.
Lögdlund
, and
W. R.
Salaneck
,
Nature (London)
397
,
121
(
1999
).
B.
Crone
,
A.
Dodabalapur
,
Y.-Y.
Lin
,
R. W.
Filas
,
Z.
Bao
,
A.
LaDuca
,
R.
Sarpeshkar
,
H. E.
Katz
, and
W.
Li
,
Nature (London)
403
,
521
(
2000
).
F. M.
Raymo
,
Adv. Mater.
14
,
401
(
2002
).
J.
Chen
,
M. A.
Reed
,
A. M.
Rawlett
, and
J. M.
Tour
,
Science
286
,
1550
(
1999
).
C. P.
Collier
,
E. W.
Wong
,
M.
Belohradsḱy
,
F. M.
Raymo
,
J. F.
Stoddart
,
P. J.
Kuekes
,
R. S.
Williams
, and
J. R.
Heath
,
Science
285
,
391
(
1999
).
Z. J.
Donhauser
,
B. A.
Mantooth
,
K. F.
Kelly
,
L. A.
Bumm
,
J. D.
Monnell
,
J. J.
Stapleton
,
D. W.
Price Jr.
,
A. M.
Rawlett
,
D. L.
Allara
,
J. M.
Tour
, and
P. S.
Weiss
,
Science
292
,
2303
(
2001
).
J. M.
Seminario
,
A. G.
Zacarias
, and
P. A.
Derosa
,
J. Chem. Phys.
116
,
1671
(
2002
).
D. M.
Taylor
and
C. A.
Mills
,
J. Appl. Phys.
90
,
306
(
2001
).
L.
Ma
,
J.
Liu
,
S.
Pyo
, and
Y.
Yang
,
Appl. Phys. Lett.
80
,
2997
(
2002
).
S. R.
Ovshinsky
,
Phys. Rev. Lett.
21
,
1450
(
1968
).
A. R.
Elsharkawi
and
K. C.
Kao
,
J. Phys. Chem. Solids
38
,
95
(
1977
).
A.
Beck
,
J. G.
Bednorz
,
Ch.
Gerber
,
C.
Rossel
, and
D.
Widmer
,
Appl. Phys. Lett.
77
,
139
(
2000
).
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