Electron-beam-induced deformations of SiO2 nanostructures (original) (raw)

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Research Article| July 06 2005

A. J. Storm;

Kavli Institute of Nanoscience, Delft University of Technology

, Lorentzweg 1, 2628 CJ Delft, The Netherlands

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J. H. Chen;

Kavli Institute of Nanoscience, Delft University of Technology

, Lorentzweg 1, 2628 CJ Delft, The Netherlands and

Netherlands Institute for Metals Research

, 2628 AL Delft, The Netherlands

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X. S. Ling;

Kavli Institute of Nanoscience, Delft University of Technology

, Lorentzweg 1, 2628 CJ Delft, The Netherlands

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H. W. Zandbergen;

Kavli Institute of Nanoscience, Delft University of Technology

, Lorentzweg 1, 2628 CJ Delft, The Netherlands

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C. Dekker

Kavli Institute of Nanoscience, Delft University of Technology

, Lorentzweg 1, 2628 CJ Delft, The Netherlands

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Crossmark: Check for Updates

a)

Electronic mail: storm@mb.tn.tudelft.nl

b)

Permanent address: Department of Physics, Brown University, Providence, Rhode Island 02912.

J. Appl. Phys. 98, 014307 (2005)

The imaging beam of a transmission electron microscope can be used to fine tune critical dimensions in silicon oxide nanostructures. This technique is particularly useful for the fabrication of nanopores with single-nanometer precision, down to 2 nm. We report a detailed study on the effect of electron-beam irradiation on apertures with various geometries. We show that, on the same wafer, pores that are smaller than a certain critical size shrink and that larger ones expand. Our results are in agreement with the hypothesis that surface-tension effects drive the modifications. Additionally, we have determined the chemical composition in the pore region before and after modifications and found no significant changes. This result proves that contamination growth is not the underlying mechanism of pore closure.

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© 2005 American Institute of Physics.

2005

American Institute of Physics

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