sw)-zone operation. It relaxes on-times of high-side power switches at high Isw and retains independent Vo regulation with no jittering under spread-spectrum modulations (SSMs). The design work is validated by an IC prototype, which is fabricated on a 180nm HV BCD process using a die area of 1.84mm². It achieves a high step-down conversion from 24V to 1V over a load range of 100mW to 2.7W. Compared to classic half-bridge topology, it relaxes the on-time of high-side switch by about 12 times from 10.4ns to 125ns at 4MHz. Compatible with all major SSM techniques, it reduces peak EMI by 18.25 dB and 20.75 dB, with fixed-rate SSM (FR-SSM) and random SSM (RSSM), respectively. In both cases, the converter experiences no Vo jittering with Vo ripples below 50mV.">

An Automotive-Use Dual-fsw-Zone Hybrid Switching Power Converter with Vo-Jitter-Immune Spread-Spectrum Modulation (original) (raw)

IEEE Account

Purchase Details

Profile Information

Need Help?

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2026 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.