$\mu \text{m}\,\,\times $ 240

$\mu \text{m}$

and a low measured insertion loss of 0.5 dB. The 3-dB bandwidth is over 80 GHz covering the whole G-band (140–220 GHz). Based on this structure, a high-efficiency mm-Wave PA has been fabricated in the 130-nm SiGe BiCMOS technology. The three-stage PA achieves a peak power gain of 30.7 dB, 3-dB small-signal gain bandwidth of 40 GHz from 142 to 182 GHz, a measured maximum saturated output power of 18.1 dBm, and a peak power-added efficiency (PAE) of 12.4% at 161 GHz. The extremely compact power combining methodology leads to a small core area of 488

$\mu \text{m}\,\,\times $

214

$\mu \text{m}$

and an output power per unit die area of 662 mW/mm².">

A High-Efficiency 142–182-GHz SiGe BiCMOS Power Amplifier With Broadband Slotline-Based Power Combining Technique (original) (raw)

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