${X}$ , the design space is expanded so that the impedance terminations of the fundamental and harmonics are no longer fixed points. Based on the broadband capability of the proposed structure, using a GaN HEMT transistor, a proof-of-concept circuit implemented with the Chebyshev impedance transformation network is designed and fabricated. Experimental results demonstrate a high-efficiency broadband PA operating from 2.6-3.9 GHz, with the average efficiency of 71.5%, the measured output power (

${P}_{\textit {out}}$

) of 38.8-40.9 dBm and the power gain of 8.5-10.6 dB.">

Novel Design Space of Broadband High-Efficiency Parallel-Circuit Class-EF Power Amplifiers (original) (raw)

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