c0 by a factor of two when compared to conventional single MTJs. In single MTJs, the overdrive required to reach a write-error rate (WER) of 1E-6 was reduced by materials optimization from 53% to 29% a write-error rate (WER) of 1E-6 by materials optimization. Ultra-low switching current of 8 µA at WER = 1E-9 was achieved in an 11 nm MTJ with 10 ns write pulses.">

Low-current Spin Transfer Torque MRAM (original) (raw)

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