Growth of Large Single Crystals of Black Phosphorus under High Pressure (original) (raw)

Copyright (c) 1982 The Japan Society of Applied Physics
Japanese Journal of Applied Physics,Volume 21,Number 8ACitation Shoichi Endo et al 1982 Jpn. J. Appl. Phys. 21 L482DOI 10.1143/JJAP.21.L482

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1347-4065/21/8A/L482

Abstract

A large volume high pressure apparatus has made it possible to grow large single crystals of black phosphorus, P. After converting red P powder into black P under a high pressure of 10 kbar at high temperature, a melt of polycrystalline black P has been gradually solidified to bring about the growth of single crystals. Crystal sizes larger than 5×5×10 mm3 are, for the first time, adequate for various measurements of the physical properties expected for this narrow gap semiconductor with a special layered structure. An X-ray analysis has proved the good single crystalline structure.

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