Effect of Substrate Temperature on the Selectivity in Low Pressure Chemical Vapor Deposition of Aluminum (original) (raw)

© 1992 ECS - The Electrochemical Society
Journal of The Electrochemical Society,Volume 139,Number 12Citation K. Lee I. et al 1992 J. Electrochem. Soc. 139 3578DOI 10.1149/1.2069125

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1945-7111/139/12/3578

Abstract

Selective deposition of aluminum was carried out by the low pressure chemical vapor deposition (LPCVD) method. Selectivity between silicon and silicon dioxide was investigated in a cold wall LPCVD system with tri‐isobutyl‐aluminum (TIBA) source. It has been found that the substrate temperature is the most important variable in determining the selectivity among other variables such as TIBA flow rate and TIBA pressure. Growth activation energy and nucleation activation energy for the aluminum deposition were determined from Arrhenius plot, and it could be concluded that the temperature dependence of the selectivity of aluminum between Si and came from the large difference (∼1 eV) in nucleation activation energies. It was suggested that topology improvement in chemically vapor deposited films could be made by pretreatment of the substrate which reduces the nucleation activation energy.

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