High-power laser diode at 9xx nm with 81.10% efficiency (original) (raw)

Author Affiliations

Liang Wang,1,2Hongwei Qu,1,3,4,5Aiyi Qi,1,4,5,6Xuyan Zhou,1,5,7and Wanhua Zheng1,2,3,4,5,8

1Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, CAS, Beijing 100083, China

2College of Future Technology, University of Chinese Academy of Sciences, Beijing 100049, China

3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

4State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China

5Weifang Academy of Advanced Opto-Electronic Circuits, Weifang, Shandong Province 261021, China

6e-mail: qiaiyi@semi.ac.cn

7e-mail: zhouxuyan@semi.ac.cn

8e-mail: whzheng@semi.ac.cn