Jean-daniel Arnould | Institut polytechnique de Grenoble - Grenoble INP (original) (raw)
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Papers by Jean-daniel Arnould
HAL (Le Centre pour la Communication Scientifique Directe), Jun 4, 2015
National audienc
2007 European Microwave Conference, 2007
... Complete Design and Measurement Methodology C. Hoarau1, P.-E. Bailly, J.-D. Arnould, P. Ferra... more ... Complete Design and Measurement Methodology C. Hoarau1, P.-E. Bailly, J.-D. Arnould, P. Ferrari, and P. Xavier ... [7] CE McIntosh, RD Pollard, and RE Miles, “Novel MMIC source-impedance tuners for on-wafer microwave noise-parameter measurements”, IEEE Trans. ...
IEEE Transactions on Microwave Theory and Techniques, Nov 1, 2008
Microwave and Optical Technology Letters, Mar 25, 2015
2022 IEEE International Reliability Physics Symposium (IRPS), Mar 1, 2022
HAL (Le Centre pour la Communication Scientifique Directe), Apr 1, 2014
In this paper, a monolithic solution based on integrated coreless transformer (ICT) for galvanic ... more In this paper, a monolithic solution based on integrated coreless transformer (ICT) for galvanic isolation and power transfer application is demonstrated. First, the characterization of ICTs is investigated by a set of five devices with stacked topology but different geometrical parameters fabricated in a 0.35 μm H35B4M3 CMOS technology from AMS. Second, the behavior of these ICTs is also predicted by electromagnetic (EM) simulation in Ansoft HFSS and analyzed by their equivalent electrical model. The measured results have shown a peak of voltage gain of -3 dB with the design of 300 μm of diameter while charging with the input capacitance of 900 fF of the demodulated circuit. Finally, an integrated gate driver is also fabricated using the optimal design of ICT, achieving a compact area of 0.72 mm2 and offers 1.8 kV of isolation. The experimental results of this gate driver have validated the use of isolated signal and energy transfer by on-chip transformer for both high side and low side applications.
HAL (Le Centre pour la Communication Scientifique Directe), Jun 7, 2022
2022 44th Annual EOS/ESD Symposium (EOS/ESD)
IEEE Transactions on Circuits and Systems I: Regular Papers
J3eA
Il s’agit de former des étudiants de Master 2 et des ingénieurs en formation continue à la mesure... more Il s’agit de former des étudiants de Master 2 et des ingénieurs en formation continue à la mesure RF sous pointes pour caractériser des capacités Métal-Isolant-Métal (MIM) intégrées sur un wafer. La problématique est d’obtenir le modèle électrique le plus fiable possible de ces capacités entre 40MHz et 26GHz tout en s’affranchissant des contraintes de mesures et des éléments d’accès RF à cette capacité.
IEEE Solid-State Circuits Letters
2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2017
In this paper, a new balanced frequency doubler based on a Marchand Balun with Coupled Slow-wave ... more In this paper, a new balanced frequency doubler based on a Marchand Balun with Coupled Slow-wave Coplanar Wave (CS-CPW) lines in G band is presented and analyzed. The experimental results of the frequency doubler exhibit at 174 GHz a peak output power of +2 dBm associate with a linear conversion gain of −3.8 dB, a frequency bandwidth of 160 to 190 GHz and a DC power consumption of 25 mW. This doubler is fabricated in a 55 nm SiGe BiCMOS technology from STMicroelectronics with ft/fmax 320/370 GHz respectively and an area of 1200×700 µm2 including the pads.
HAL (Le Centre pour la Communication Scientifique Directe), Jun 4, 2015
National audienc
2007 European Microwave Conference, 2007
... Complete Design and Measurement Methodology C. Hoarau1, P.-E. Bailly, J.-D. Arnould, P. Ferra... more ... Complete Design and Measurement Methodology C. Hoarau1, P.-E. Bailly, J.-D. Arnould, P. Ferrari, and P. Xavier ... [7] CE McIntosh, RD Pollard, and RE Miles, “Novel MMIC source-impedance tuners for on-wafer microwave noise-parameter measurements”, IEEE Trans. ...
IEEE Transactions on Microwave Theory and Techniques, Nov 1, 2008
Microwave and Optical Technology Letters, Mar 25, 2015
2022 IEEE International Reliability Physics Symposium (IRPS), Mar 1, 2022
HAL (Le Centre pour la Communication Scientifique Directe), Apr 1, 2014
In this paper, a monolithic solution based on integrated coreless transformer (ICT) for galvanic ... more In this paper, a monolithic solution based on integrated coreless transformer (ICT) for galvanic isolation and power transfer application is demonstrated. First, the characterization of ICTs is investigated by a set of five devices with stacked topology but different geometrical parameters fabricated in a 0.35 μm H35B4M3 CMOS technology from AMS. Second, the behavior of these ICTs is also predicted by electromagnetic (EM) simulation in Ansoft HFSS and analyzed by their equivalent electrical model. The measured results have shown a peak of voltage gain of -3 dB with the design of 300 μm of diameter while charging with the input capacitance of 900 fF of the demodulated circuit. Finally, an integrated gate driver is also fabricated using the optimal design of ICT, achieving a compact area of 0.72 mm2 and offers 1.8 kV of isolation. The experimental results of this gate driver have validated the use of isolated signal and energy transfer by on-chip transformer for both high side and low side applications.
HAL (Le Centre pour la Communication Scientifique Directe), Jun 7, 2022
2022 44th Annual EOS/ESD Symposium (EOS/ESD)
IEEE Transactions on Circuits and Systems I: Regular Papers
J3eA
Il s’agit de former des étudiants de Master 2 et des ingénieurs en formation continue à la mesure... more Il s’agit de former des étudiants de Master 2 et des ingénieurs en formation continue à la mesure RF sous pointes pour caractériser des capacités Métal-Isolant-Métal (MIM) intégrées sur un wafer. La problématique est d’obtenir le modèle électrique le plus fiable possible de ces capacités entre 40MHz et 26GHz tout en s’affranchissant des contraintes de mesures et des éléments d’accès RF à cette capacité.
IEEE Solid-State Circuits Letters
2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2017
In this paper, a new balanced frequency doubler based on a Marchand Balun with Coupled Slow-wave ... more In this paper, a new balanced frequency doubler based on a Marchand Balun with Coupled Slow-wave Coplanar Wave (CS-CPW) lines in G band is presented and analyzed. The experimental results of the frequency doubler exhibit at 174 GHz a peak output power of +2 dBm associate with a linear conversion gain of −3.8 dB, a frequency bandwidth of 160 to 190 GHz and a DC power consumption of 25 mW. This doubler is fabricated in a 55 nm SiGe BiCMOS technology from STMicroelectronics with ft/fmax 320/370 GHz respectively and an area of 1200×700 µm2 including the pads.