Stijn De Jonge - Academia.edu (original) (raw)
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Indian Institute Of Technology, Roorkee
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Papers by Stijn De Jonge
Applied physics …, Jan 1, 2004
The properties of the dielectric strongly influence the performance of organic thin-film transist... more The properties of the dielectric strongly influence the performance of organic thin-film transistors. In this letter, we show experimental results that quantify the influence of the roughness of the dielectric on the mobility of pentacene transistors and discuss the cause of it. We consider the movement of charge carriers out of the "roughness valleys" or across those valleys at the dielectricsemiconductor interface as the limiting step for the roughness-dependent mobility in the transistor channel.
![Research paper thumbnail of Organic CuTCNQ non-volatile memories for integration in the CMOS backend-of-line: Preparation from gas/solid reaction and downscaling to an area of 0.25 [mu] m2](https://attachments.academia-assets.com/5412780/thumbnails/1.jpg)
](Solid-state …, Jan 1, 2006
CuTCNQ is an organic semiconductor charge transfer material that allows the realization of non-vo... more CuTCNQ is an organic semiconductor charge transfer material that allows the realization of non-volatile cross-bar memory arrays with conductivity switching. In this work, we present a simple preparation method of this organic memory material, compatible with industrial processing and downsizing of the memory cells. CuTCNQ nanowires were prepared on Cu by a solid-gas phase corrosion reaction between the metal and hot TCNQ gas at low pressure. Surface coverage increased with reaction time and temperature. Cu/CuT-CNQ/Al cross-point cell arrays with memory areas of 0.01 mm 2 exhibited I-V curves with ON/OFF current ratios of about 10. Further downscaling of the CuTCNQ nanowire memory elements was successful on top of 0.25 lm 2 copper-filled vias. Corresponding memories achieved ON/OFF current ratio of about 100. This is, to our knowledge, the first report on downscaling of organic memories to this size.
Applied physics …, Jan 1, 2006
Nanowires of the organometallic semiconductor CuTCNQ were grown from TCNQ vapor in 250 nm diamete... more Nanowires of the organometallic semiconductor CuTCNQ were grown from TCNQ vapor in 250 nm diameter vias of a Cu back end-of-line process. Corresponding prototypes of cross-point Cu/ CuTCNQ nanowire/Al memories exhibited nonvolatile bistable conductive switching for several ten write-erase cycles with switching currents below 10 A and current densities 1000 times higher than for large-area devices. Scaling of memory elements was also investigated.
Applied physics …, Jan 1, 2006
For organic thin-film transistors where source-drain contacts are defined on the gate dielectric ... more For organic thin-film transistors where source-drain contacts are defined on the gate dielectric prior to the deposition of the semiconductor ͑"bottom-contact" configuration͒, the gate dielectric is often treated with a self-assembled molecular monolayer prior to deposition of the organic semiconductor. In this letter, we describe a method to apply an ultrathin solution-processed polymer layer as surface treatment. Our method is compatible with the use of the bottom-contact configuration, despite the fact that the polymeric surface treatment does not stand a photolithographic step. Furthermore, we show that our surface treatment results in superior transistor performance.
Proceedings of …, Jan 1, 2003
We propose a new process for thin-film surface-textured LEDs that provides uniform current inject... more We propose a new process for thin-film surface-textured LEDs that provides uniform current injection for both top and bottom contacts. The structure uses a partially conductive mirror. This eliminates the need for thick epitaxial layers and makes it possible to fabricate very large LEDs. ...
MRS Symp. …, Jan 1, 2003
We describe and demonstrate a micromachined shadowmask that allows the realization of intra-grain... more We describe and demonstrate a micromachined shadowmask that allows the realization of intra-grain and oligo-grain top-contact organic thin film transistors (OTFTs). First experimental results of OTFT's show that for small channel lengths, grain boundary barriers indeed appear to dominate the output characteristics of OTFTs.
status: …, Jan 1, 2006
KULeuven. ...
Applied physics …, Jan 1, 2004
The properties of the dielectric strongly influence the performance of organic thin-film transist... more The properties of the dielectric strongly influence the performance of organic thin-film transistors. In this letter, we show experimental results that quantify the influence of the roughness of the dielectric on the mobility of pentacene transistors and discuss the cause of it. We consider the movement of charge carriers out of the "roughness valleys" or across those valleys at the dielectricsemiconductor interface as the limiting step for the roughness-dependent mobility in the transistor channel.
Solid-state …, Jan 1, 2006
CuTCNQ is an organic semiconductor charge transfer material that allows the realization of non-vo... more CuTCNQ is an organic semiconductor charge transfer material that allows the realization of non-volatile cross-bar memory arrays with conductivity switching. In this work, we present a simple preparation method of this organic memory material, compatible with industrial processing and downsizing of the memory cells. CuTCNQ nanowires were prepared on Cu by a solid-gas phase corrosion reaction between the metal and hot TCNQ gas at low pressure. Surface coverage increased with reaction time and temperature. Cu/CuT-CNQ/Al cross-point cell arrays with memory areas of 0.01 mm 2 exhibited I-V curves with ON/OFF current ratios of about 10. Further downscaling of the CuTCNQ nanowire memory elements was successful on top of 0.25 lm 2 copper-filled vias. Corresponding memories achieved ON/OFF current ratio of about 100. This is, to our knowledge, the first report on downscaling of organic memories to this size.
Applied physics …, Jan 1, 2006
Nanowires of the organometallic semiconductor CuTCNQ were grown from TCNQ vapor in 250 nm diamete... more Nanowires of the organometallic semiconductor CuTCNQ were grown from TCNQ vapor in 250 nm diameter vias of a Cu back end-of-line process. Corresponding prototypes of cross-point Cu/ CuTCNQ nanowire/Al memories exhibited nonvolatile bistable conductive switching for several ten write-erase cycles with switching currents below 10 A and current densities 1000 times higher than for large-area devices. Scaling of memory elements was also investigated.
Applied physics …, Jan 1, 2006
For organic thin-film transistors where source-drain contacts are defined on the gate dielectric ... more For organic thin-film transistors where source-drain contacts are defined on the gate dielectric prior to the deposition of the semiconductor ͑"bottom-contact" configuration͒, the gate dielectric is often treated with a self-assembled molecular monolayer prior to deposition of the organic semiconductor. In this letter, we describe a method to apply an ultrathin solution-processed polymer layer as surface treatment. Our method is compatible with the use of the bottom-contact configuration, despite the fact that the polymeric surface treatment does not stand a photolithographic step. Furthermore, we show that our surface treatment results in superior transistor performance.
Proceedings of …, Jan 1, 2003
We propose a new process for thin-film surface-textured LEDs that provides uniform current inject... more We propose a new process for thin-film surface-textured LEDs that provides uniform current injection for both top and bottom contacts. The structure uses a partially conductive mirror. This eliminates the need for thick epitaxial layers and makes it possible to fabricate very large LEDs. ...
MRS Symp. …, Jan 1, 2003
We describe and demonstrate a micromachined shadowmask that allows the realization of intra-grain... more We describe and demonstrate a micromachined shadowmask that allows the realization of intra-grain and oligo-grain top-contact organic thin film transistors (OTFTs). First experimental results of OTFT's show that for small channel lengths, grain boundary barriers indeed appear to dominate the output characteristics of OTFTs.
status: …, Jan 1, 2006
KULeuven. ...