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Mustafa Özen

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Papers by Mustafa Özen

Research paper thumbnail of High efficiency RF pulse width modulation with tunable load network class-E PA

... Mustafa Acar, Mark P. van der Heijden and Rik Jos NXP Semiconductors Eindhoven, The Netherlan... more ... Mustafa Acar, Mark P. van der Heijden and Rik Jos NXP Semiconductors Eindhoven, The Netherlands Sweden, Gothenburg e-mail: mustafa.ozen@chalmers.se ... In prac-e-mail:mustafa.acar@nxp.com .IL...fl.....fL f\ . V RF pulse width modulator JUU1Jl Fig. ...

Research paper thumbnail of High-Efficiency RF Pulsewidth Modulation of Class-E Power Amplifiers

IEEE Transactions on Microwave Theory and Techniques, 2011

A new switch mode power amplifier (SMPA) topology particularly suitable for energy efficient ampl... more A new switch mode power amplifier (SMPA) topology particularly suitable for energy efficient amplification of radio frequency pulse width modulation (RF-PWM) signals is derived. It is analytically shown that high efficiency can be maintained over a wide power dynamic range if the imaginary part of the Class-E load impedance is varied along with the duty cycle (pulse width). Using the theory developed, an explicit design procedure is presented that allows practical realization of the proposed topology from the circuit and component specifications. Following the design procedure, and using in-house (Chalmers University) SiC varactor diodes to implement the tunable imaginary load impedance, a 2 GHz 10 W peak output power GaN HEMT circuit demonstrator is realized. RF-PWM input signals for characterization of the prototype PA is generated with a dedicated 65 nm CMOS modulator. The measurements show that a drain efficiency > 70% can be obtained over an 6.5 dB dynamic range, which verifies the theory presented and demonstrates the feasibility of the proposed PA topology.

Research paper thumbnail of High efficiency RF pulse width modulation with tunable load network class-E PA

... Mustafa Acar, Mark P. van der Heijden and Rik Jos NXP Semiconductors Eindhoven, The Netherlan... more ... Mustafa Acar, Mark P. van der Heijden and Rik Jos NXP Semiconductors Eindhoven, The Netherlands Sweden, Gothenburg e-mail: mustafa.ozen@chalmers.se ... In prac-e-mail:mustafa.acar@nxp.com .IL...fl.....fL f\ . V RF pulse width modulator JUU1Jl Fig. ...

Research paper thumbnail of High-Efficiency RF Pulsewidth Modulation of Class-E Power Amplifiers

IEEE Transactions on Microwave Theory and Techniques, 2011

A new switch mode power amplifier (SMPA) topology particularly suitable for energy efficient ampl... more A new switch mode power amplifier (SMPA) topology particularly suitable for energy efficient amplification of radio frequency pulse width modulation (RF-PWM) signals is derived. It is analytically shown that high efficiency can be maintained over a wide power dynamic range if the imaginary part of the Class-E load impedance is varied along with the duty cycle (pulse width). Using the theory developed, an explicit design procedure is presented that allows practical realization of the proposed topology from the circuit and component specifications. Following the design procedure, and using in-house (Chalmers University) SiC varactor diodes to implement the tunable imaginary load impedance, a 2 GHz 10 W peak output power GaN HEMT circuit demonstrator is realized. RF-PWM input signals for characterization of the prototype PA is generated with a dedicated 65 nm CMOS modulator. The measurements show that a drain efficiency > 70% can be obtained over an 6.5 dB dynamic range, which verifies the theory presented and demonstrates the feasibility of the proposed PA topology.

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