A B M Hamidul Islam (original) (raw)

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Papers by A B M Hamidul Islam

Research paper thumbnail of Size-dependent variation of efficiency in InGaN-based flip-chip near ultraviolet and blue micro light-emitting diodes

Light-Emitting Devices, Materials, and Applications XXVI, 2022

Research paper thumbnail of Precise performances of InGaN/GaN-based sidewall emitted light-emitting diodes for ultrathin backlight unit

Gallium Nitride Materials and Devices XVII, 2022

Research paper thumbnail of Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization (Conference Presentation)

Gallium Nitride Materials and Devices XV, 2020

Research paper thumbnail of Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications

Scientific Reports, 2021

This paper describes the fabrication process and characteristics of dimension- and position-contr... more This paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applications. The characteristics of dimension- and position-controlled growth, which is crucial to fabricate high-performance electronic and optoelectronic devices, were investigated using scanning and transmission electron microscopes and power-dependent photoluminescence spectroscopy measurements. Among the GaN microstructures, GaN microrods exhibited excellent photoluminescence characteristics including room-temperature stimulated emission, which is especially useful for optoelectronic device applications. As one of the device applications of the position-controlled GaN microrod arrays, we fabricated light-emitting diodes (LEDs) by heteroepitaxially growing InxGa1−xN/GaN multiple quantum wells (MQWs) and a p-type GaN layer on the surfaces of...

Research paper thumbnail of Very low input voltage cascaded travelling wave electroabsorption modulator (CTWEAM) for more than 100Gbps

Optics Communications, 2013

Research paper thumbnail of Operation of low driving voltage cascaded modulator over non-cascaded modulator for 4dB extinction ratio at 100 giga bit per second (Gbps)

Optik - International Journal for Light and Electron Optics, 2014

Research paper thumbnail of Size-dependent variation of efficiency in InGaN-based flip-chip near ultraviolet and blue micro light-emitting diodes

Light-Emitting Devices, Materials, and Applications XXVI, 2022

Research paper thumbnail of Precise performances of InGaN/GaN-based sidewall emitted light-emitting diodes for ultrathin backlight unit

Gallium Nitride Materials and Devices XVII, 2022

Research paper thumbnail of Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization (Conference Presentation)

Gallium Nitride Materials and Devices XV, 2020

Research paper thumbnail of Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications

Scientific Reports, 2021

This paper describes the fabrication process and characteristics of dimension- and position-contr... more This paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applications. The characteristics of dimension- and position-controlled growth, which is crucial to fabricate high-performance electronic and optoelectronic devices, were investigated using scanning and transmission electron microscopes and power-dependent photoluminescence spectroscopy measurements. Among the GaN microstructures, GaN microrods exhibited excellent photoluminescence characteristics including room-temperature stimulated emission, which is especially useful for optoelectronic device applications. As one of the device applications of the position-controlled GaN microrod arrays, we fabricated light-emitting diodes (LEDs) by heteroepitaxially growing InxGa1−xN/GaN multiple quantum wells (MQWs) and a p-type GaN layer on the surfaces of...

Research paper thumbnail of Very low input voltage cascaded travelling wave electroabsorption modulator (CTWEAM) for more than 100Gbps

Optics Communications, 2013

Research paper thumbnail of Operation of low driving voltage cascaded modulator over non-cascaded modulator for 4dB extinction ratio at 100 giga bit per second (Gbps)

Optik - International Journal for Light and Electron Optics, 2014

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