A. Zabrodskii - Academia.edu (original) (raw)

Papers by A. Zabrodskii

Research paper thumbnail of Legendary Ioffe Institute: 100 Years of Service to Science and Homeland

Research paper thumbnail of Kurchatov and Physical-Technical Institute (Ioffe Institute)

Research paper thumbnail of Composition dependence of the compensation of neutron-doped Si/sub 1-x/Ge/sub x/ alloys

A theoretical calculation is made of the composition x = x/sub 0/ at which complete compensation ... more A theoretical calculation is made of the composition x = x/sub 0/ at which complete compensation is achieved as a result of formation of various donor and acceptor impurities by transmutation of germanium and silicon due to reactions with moderated reactor neutrons. (AIP)

Research paper thumbnail of Alloy fluctuations in Si1−xGex crystals

Physica B: Condensed Matter, 2001

ABSTRACT We have introduced /S donors into SiGe alloys as probe atoms for a spectroscopic investi... more ABSTRACT We have introduced /S donors into SiGe alloys as probe atoms for a spectroscopic investigation of the local environment of these donors. Even for low Ge content (/x=2.4%), we already observe strongly broadened lines for the intra-centre transitions, whereas the onset of the photo-ionisation stays at approximately the same energy, in contrast to expectations from a linear extrapolation of the impurity level from values of the pure compounds or from deformation potentials. We thus conclude that the /S centres seen are located in the neighbourhood of significantly lower Ge content suggesting that Ge clusters may exist with much higher Ge content which, however, cannot be resolved in the photo-conductivity spectra. This finding, together with the observed line broadening demonstrates strong, non-statistical fluctuations in the alloy distribution.

Research paper thumbnail of Alloy fluctuations in Si1−xGex crystals

Physica B: Condensed Matter, 2001

ABSTRACT We have introduced /S donors into SiGe alloys as probe atoms for a spectroscopic investi... more ABSTRACT We have introduced /S donors into SiGe alloys as probe atoms for a spectroscopic investigation of the local environment of these donors. Even for low Ge content (/x=2.4%), we already observe strongly broadened lines for the intra-centre transitions, whereas the onset of the photo-ionisation stays at approximately the same energy, in contrast to expectations from a linear extrapolation of the impurity level from values of the pure compounds or from deformation potentials. We thus conclude that the /S centres seen are located in the neighbourhood of significantly lower Ge content suggesting that Ge clusters may exist with much higher Ge content which, however, cannot be resolved in the photo-conductivity spectra. This finding, together with the observed line broadening demonstrates strong, non-statistical fluctuations in the alloy distribution.

Research paper thumbnail of Simulation of Low Gain Avalanche Detector characteristics based on the concept of negative feedback in irradiated silicon detectors with carrier impact ionization

Journal of Instrumentation

Research paper thumbnail of Development of silicon detectors for Beam Loss Monitoring at HL-LHC

Journal of Instrumentation

Research paper thumbnail of The impact of neutral base region on the collected charge in heavily irradiated silicon detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Research paper thumbnail of Observation of the Quantum Correction Term for the Microwave Magnetoresistance in Weakly Doped Ge

AIP Conference Proceedings, 2005

The anomalous magnetoresistance (MR) of the interference origin was first observed in the weakly ... more The anomalous magnetoresistance (MR) of the interference origin was first observed in the weakly doped nongenerated n-Ge:Sb and p-Ge:Ga. Early proposed for the MR detection, the electron spin resonance technique was used for this investigation. It was found that the anomalous MR was observed in these materials in the temperature range of the classical (nonhopping) motion and in the magnetic fields not higher than some hundred Oersteds. Some peculiarities of the classical MR were observed and explained too.

Research paper thumbnail of Antiferromagnetic Spin Glass Ordering in the Vicinity of Insulator — Metal Transition in n-Ge:As

AIP Conference Proceedings, 2005

ABSTRACT Electron spin resonance investigation in the insulator phase of compensated n-Ge:As show... more ABSTRACT Electron spin resonance investigation in the insulator phase of compensated n-Ge:As shows that near the insulator - metal transition the weakly localized electrons are connected in the pairs with the antiparallel coupled spins. As a result, the antiferromagnetic spin glass structure is created. The main manifestations of the phenomenon are the fall of the free (unpaired) spin density, the free spin increase with temperature, and characteristic antiferromagnetic g-factor shift with the electron density in the pretransition range.

Research paper thumbnail of The Coulomb gap: The view of an experimenter

Philosophical Magazine Part B, 2001

Research paper thumbnail of In situ radiation test of silicon and diamond detectors operating in superfluid helium and developed for beam loss monitoring

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015

Research paper thumbnail of Kinetics of impact ionization in three-level system

Physics of the Solid State

ABSTRACT

Research paper thumbnail of Peculiarities of the electric and magnetic properties of 6H-SiC on the insulator side of the metal-insulator transition

Research paper thumbnail of Effect of the Coulomb interaction on the thermal ionization energy of the dominant impurity in compensated Ge:Ga

Research paper thumbnail of Restriction on the gain in collected charge due to carrier avalanche multiplication in heavily irradiated Si strip detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2013

ABSTRACT

Research paper thumbnail of The Peierls phase transition in n-Ge caused by impurity interaction

Bulletin of the Russian Academy of Sciences: Physics, 2009

ABSTRACT The study of the electron paramagnetic resonance in Ge:As has revealed that the insulati... more ABSTRACT The study of the electron paramagnetic resonance in Ge:As has revealed that the insulating state in uncompensated semiconductors is preserved near the insulator-metal phase transition because of the appearance of lattice distortions. The latter are caused by the interaction of the spins localized on impurity atoms due to the spin-Peierls transition. In Ge:As, this effect manifests itself in the concentration range n = n = 3 × 1017–3.7 × 1017 cm−3.

Research paper thumbnail of Low-temperature ordering caused by exchange interaction in the Si:P impurity system near the insulator - Metal phase transition

ABSTRACT Behavior of the paramagnetic susceptibility in Si: P at low temperatures was investigate... more ABSTRACT Behavior of the paramagnetic susceptibility in Si: P at low temperatures was investigated by Electron Spin Resonance in order to detect the antiferromagnetic and ferromagnetic ordering in the vicinity of the insulator-metal phase transition. The procedure was developed to operate sufficiently smooth changes of the spin density, by proton irradiated.

Research paper thumbnail of Low temperature transformation from antiferromagnetic to ferromagnetic order in impurity system Ge:As near the insulator-metal phase transition

ABSTRACT The low-temperature transformation from antiparallel to parallel spin orientation in a n... more ABSTRACT The low-temperature transformation from antiparallel to parallel spin orientation in a nonmagnetic compensated system Ge:As semiconductor near the metal-insulator phase transition has been experimentally observed. This effect is manifested in the temperature dependences of the impurity magnetic susceptibility obtained by integration of the spin resonance absorption line. These dependences show that the spin density falls in the medium temperature range (10-100 K) and grows at low temperatures. The effect is confirmed by the specific temperature features of the g-factor and inverse magnetic susceptibility. As the relative content of a compensating impurity (gallium) is made lower than 0.7, the transition temperature begins to decrease and, at a degree of compensation < 0.3, falls outside the temperature range under study (i.e., below 2 K).

Research paper thumbnail of Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

Research paper thumbnail of Legendary Ioffe Institute: 100 Years of Service to Science and Homeland

Research paper thumbnail of Kurchatov and Physical-Technical Institute (Ioffe Institute)

Research paper thumbnail of Composition dependence of the compensation of neutron-doped Si/sub 1-x/Ge/sub x/ alloys

A theoretical calculation is made of the composition x = x/sub 0/ at which complete compensation ... more A theoretical calculation is made of the composition x = x/sub 0/ at which complete compensation is achieved as a result of formation of various donor and acceptor impurities by transmutation of germanium and silicon due to reactions with moderated reactor neutrons. (AIP)

Research paper thumbnail of Alloy fluctuations in Si1−xGex crystals

Physica B: Condensed Matter, 2001

ABSTRACT We have introduced /S donors into SiGe alloys as probe atoms for a spectroscopic investi... more ABSTRACT We have introduced /S donors into SiGe alloys as probe atoms for a spectroscopic investigation of the local environment of these donors. Even for low Ge content (/x=2.4%), we already observe strongly broadened lines for the intra-centre transitions, whereas the onset of the photo-ionisation stays at approximately the same energy, in contrast to expectations from a linear extrapolation of the impurity level from values of the pure compounds or from deformation potentials. We thus conclude that the /S centres seen are located in the neighbourhood of significantly lower Ge content suggesting that Ge clusters may exist with much higher Ge content which, however, cannot be resolved in the photo-conductivity spectra. This finding, together with the observed line broadening demonstrates strong, non-statistical fluctuations in the alloy distribution.

Research paper thumbnail of Alloy fluctuations in Si1−xGex crystals

Physica B: Condensed Matter, 2001

ABSTRACT We have introduced /S donors into SiGe alloys as probe atoms for a spectroscopic investi... more ABSTRACT We have introduced /S donors into SiGe alloys as probe atoms for a spectroscopic investigation of the local environment of these donors. Even for low Ge content (/x=2.4%), we already observe strongly broadened lines for the intra-centre transitions, whereas the onset of the photo-ionisation stays at approximately the same energy, in contrast to expectations from a linear extrapolation of the impurity level from values of the pure compounds or from deformation potentials. We thus conclude that the /S centres seen are located in the neighbourhood of significantly lower Ge content suggesting that Ge clusters may exist with much higher Ge content which, however, cannot be resolved in the photo-conductivity spectra. This finding, together with the observed line broadening demonstrates strong, non-statistical fluctuations in the alloy distribution.

Research paper thumbnail of Simulation of Low Gain Avalanche Detector characteristics based on the concept of negative feedback in irradiated silicon detectors with carrier impact ionization

Journal of Instrumentation

Research paper thumbnail of Development of silicon detectors for Beam Loss Monitoring at HL-LHC

Journal of Instrumentation

Research paper thumbnail of The impact of neutral base region on the collected charge in heavily irradiated silicon detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Research paper thumbnail of Observation of the Quantum Correction Term for the Microwave Magnetoresistance in Weakly Doped Ge

AIP Conference Proceedings, 2005

The anomalous magnetoresistance (MR) of the interference origin was first observed in the weakly ... more The anomalous magnetoresistance (MR) of the interference origin was first observed in the weakly doped nongenerated n-Ge:Sb and p-Ge:Ga. Early proposed for the MR detection, the electron spin resonance technique was used for this investigation. It was found that the anomalous MR was observed in these materials in the temperature range of the classical (nonhopping) motion and in the magnetic fields not higher than some hundred Oersteds. Some peculiarities of the classical MR were observed and explained too.

Research paper thumbnail of Antiferromagnetic Spin Glass Ordering in the Vicinity of Insulator — Metal Transition in n-Ge:As

AIP Conference Proceedings, 2005

ABSTRACT Electron spin resonance investigation in the insulator phase of compensated n-Ge:As show... more ABSTRACT Electron spin resonance investigation in the insulator phase of compensated n-Ge:As shows that near the insulator - metal transition the weakly localized electrons are connected in the pairs with the antiparallel coupled spins. As a result, the antiferromagnetic spin glass structure is created. The main manifestations of the phenomenon are the fall of the free (unpaired) spin density, the free spin increase with temperature, and characteristic antiferromagnetic g-factor shift with the electron density in the pretransition range.

Research paper thumbnail of The Coulomb gap: The view of an experimenter

Philosophical Magazine Part B, 2001

Research paper thumbnail of In situ radiation test of silicon and diamond detectors operating in superfluid helium and developed for beam loss monitoring

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015

Research paper thumbnail of Kinetics of impact ionization in three-level system

Physics of the Solid State

ABSTRACT

Research paper thumbnail of Peculiarities of the electric and magnetic properties of 6H-SiC on the insulator side of the metal-insulator transition

Research paper thumbnail of Effect of the Coulomb interaction on the thermal ionization energy of the dominant impurity in compensated Ge:Ga

Research paper thumbnail of Restriction on the gain in collected charge due to carrier avalanche multiplication in heavily irradiated Si strip detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2013

ABSTRACT

Research paper thumbnail of The Peierls phase transition in n-Ge caused by impurity interaction

Bulletin of the Russian Academy of Sciences: Physics, 2009

ABSTRACT The study of the electron paramagnetic resonance in Ge:As has revealed that the insulati... more ABSTRACT The study of the electron paramagnetic resonance in Ge:As has revealed that the insulating state in uncompensated semiconductors is preserved near the insulator-metal phase transition because of the appearance of lattice distortions. The latter are caused by the interaction of the spins localized on impurity atoms due to the spin-Peierls transition. In Ge:As, this effect manifests itself in the concentration range n = n = 3 × 1017–3.7 × 1017 cm−3.

Research paper thumbnail of Low-temperature ordering caused by exchange interaction in the Si:P impurity system near the insulator - Metal phase transition

ABSTRACT Behavior of the paramagnetic susceptibility in Si: P at low temperatures was investigate... more ABSTRACT Behavior of the paramagnetic susceptibility in Si: P at low temperatures was investigated by Electron Spin Resonance in order to detect the antiferromagnetic and ferromagnetic ordering in the vicinity of the insulator-metal phase transition. The procedure was developed to operate sufficiently smooth changes of the spin density, by proton irradiated.

Research paper thumbnail of Low temperature transformation from antiferromagnetic to ferromagnetic order in impurity system Ge:As near the insulator-metal phase transition

ABSTRACT The low-temperature transformation from antiparallel to parallel spin orientation in a n... more ABSTRACT The low-temperature transformation from antiparallel to parallel spin orientation in a nonmagnetic compensated system Ge:As semiconductor near the metal-insulator phase transition has been experimentally observed. This effect is manifested in the temperature dependences of the impurity magnetic susceptibility obtained by integration of the spin resonance absorption line. These dependences show that the spin density falls in the medium temperature range (10-100 K) and grows at low temperatures. The effect is confirmed by the specific temperature features of the g-factor and inverse magnetic susceptibility. As the relative content of a compensating impurity (gallium) is made lower than 0.7, the transition temperature begins to decrease and, at a degree of compensation < 0.3, falls outside the temperature range under study (i.e., below 2 K).

Research paper thumbnail of Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance