Agoston Agoston - Academia.edu (original) (raw)
Papers by Agoston Agoston
[1991] GaAs IC Symposium Technical Digest, 1991
A non-self-aligned HBT (heterojunction bipolar transistor) IC process with fT and fmax of 45 GHz ... more A non-self-aligned HBT (heterojunction bipolar transistor) IC process with fT and fmax of 45 GHz is reported. The process provides 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not use any ion implantation. An HBT prescalar circuit designed with this process clocks at 13.5 GHz. A pulser circuit using Schottky diodes demonstrates 8.6 ps
[1991] GaAs IC Symposium Technical Digest, 1991
A non-self-aligned HBT (heterojunction bipolar transistor) IC process with fT and fmax of 45 GHz ... more A non-self-aligned HBT (heterojunction bipolar transistor) IC process with fT and fmax of 45 GHz is reported. The process provides 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not use any ion implantation. An HBT prescalar circuit designed with this process clocks at 13.5 GHz. A pulser circuit using Schottky diodes demonstrates 8.6 ps