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Papers by Anthony Domenicucci

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials, 2011

MRS Proceedings, 2011

ABSTRACTThree techniques based on transmission electron microscope (TEM) have been successfully a... more ABSTRACTThree techniques based on transmission electron microscope (TEM) have been successfully applied to measure strain/stress in the channel area of PMOS semiconductor devices with embedded SiGe in the source/drain areas: convergent beam electron diffraction (CBED), nano beam diffraction (NBD) and dark-filed holography (DFH). Consistent channel strain measurements from the three techniques on the same TEM sample (eSiGe PMOS with 17%Ge) were obtained. Reliable strain/stress measurement results in the channel area have been achieved with very good agreement with computer-aided design (TCAD) calculations.

Powder Metallurgy, 2003

ABSTRACT

MRS Proceedings, 2000

ABSTRACTA highly selective nitride etch was developed for gate stack spacer process in advanced m... more ABSTRACTA highly selective nitride etch was developed for gate stack spacer process in advanced memory programs. Based on methyl fluoride chemistry with better than 8:1 selectivity of nitride:oxide, this process exhibits minimal erosion to the underlying RTO thermal oxide for consistent diffusion ion-implant control. As the groundrule changed to 0.175um and below, a two-step etch scheme was employed to maintain the profile control in high-aspect-ratio structures. The stability and repeatability of the process is demonstrated in the SPC chart of the post etch FTA site measurement.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2008

Importance of effects of charging and sample thickness variation across depletion region is discu... more Importance of effects of charging and sample thickness variation across depletion region is discussed using one-dimensional p-n junction in bulk Si and silicon-on-insulator (SOI) structures prepared by mechanical polishing. It is shown that good correlation between results of electron holography and secondary ion mass spectroscopy can be achieved without consideration of “dead layers.” Analysis of laser annealed n-type field-effect transistor (n-FET) devices in SOI structures showed that laser annealing does not cause lateral dopant diffusion of arsenic to resolution of electron holography. It is demonstrated that junction overlap can be achieved with “laser-only” integration scheme. Examples are given on how electron holography can provide insight into integration scheme for development of a p-FET device with embedded SiGe source/drain regions and evaluation of effect of proximity of shallow trench isolation on dopant depletion.

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991

Composite Al/Pd/Al films were thermally evaporated onto SiO2 in an ultrahigh vacuum environment. ... more Composite Al/Pd/Al films were thermally evaporated onto SiO2 in an ultrahigh vacuum environment. The thickness of the Pd layer was varied in the range of 0–66 Å. The Pd layer was exposed to various partial pressures of H2 in situ. Secondary ion mass spectrometry showed that the amount of hydrogen dissolved in the Pd layer depended on the thickness of the Pd layer exposed. Transmission electron microscopy revealed that the grain structure of the composite films became more complex with the addition of Pd to the structure. The electromigration resistance of the films increased with the incorporation of even the thinnest of Pd layers. However, no beneficial effect due to the hydrogen dissolved in the Pd layer was evident.

Applied Physics Letters, 2006

Implant damage and strain relaxation in thin epitaxial silicon germanium (SiGe) layers on silicon... more Implant damage and strain relaxation in thin epitaxial silicon germanium (SiGe) layers on silicon (Si) (001) and their dependence on in situ carbon (C) doping in epitaxial SiGe are studied. For a 65nm SiGe layer with ∼25% germanium (Ge), conventional implants used for p-metal-oxide semiconductor source/drain, halo, and extension led to significant implant damage and strain relaxation. Two defect bands were observed, one close to the surface and the other at SiGe∕Si interface. In situ C doping (1019–1020∕cm3) was found to eliminate the implant damage close to SiGe∕Si interface area and prevent significant strain relaxation.

MRS Proceedings, 2001

ABSTRACTNitrogen diffusion and defect structure were investigated after medium to high dose nitro... more ABSTRACTNitrogen diffusion and defect structure were investigated after medium to high dose nitrogen implantation and anneal. 11 keV N2+ was implanted into silicon at doses ranging from 2×1014 to 2×1015 cm−2. The samples were annealed with an RTA system from 750°C to 900°C in a nitrogen atmosphere or at 1000°C in an oxidizing ambient. Nitrogen profiles were obtained by SIMS, and cross-section TEM was done on selected samples. TOF-SIMS was carried out in the oxidized samples. For lower doses, most of the nitrogen diffuses out of silicon into the silicon/oxide interface as expected. For the highest dose, a significant portion of the nitrogen still remains in silicon even after the highest thermal budget. This is attributed to the finite capacity of the silicon/oxide interface to trap nitrogen. When the interface gets saturated by nitrogen atoms, nitrogen in silicon can not escape into the interface. Implant doses above 7×1014 create continuous amorphous layers from the surface. For th...

Microscopy and Microanalysis, 2010

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, ... more Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

MRS Proceedings, 1999

In this study, we investigate the diffusion of mobile ions through thin PSG or SiN layers using s... more In this study, we investigate the diffusion of mobile ions through thin PSG or SiN layers using secondary ion mass spectrometry (SIMS). The diffusivity of Na through either layer is about 100,000X slower than through SiO2. Hence, thin layers of these materials are effective barriers for short anneals at 400°C. However, there is significant diffusion of both Na and K through these layers at 550°C. This suggests that improved cleans will be required to remove mobile ion contamination after interconnect processes.

Microscopy and Microanalysis, 2005

In this paper, we describe the unique scaling challenges, critical sources of variation, and the ... more In this paper, we describe the unique scaling challenges, critical sources of variation, and the potential trench leakage mechanisms of 32nm trench capacitors that utilize high-κ/metal electrode materials. This is the first eDRAM technology that has successfully integrated high-κ and metal films as part of the trench capacitor. In addition, these films are found to be fully compatible with front-end of line (FEOL) thermal budgets. We explore sources of variation and illustrate process mitigation techniques, including the targeting of key capacitor properties, and reduction in trench leakage. Finally, we illustrate that systematic and random variations do not pose as insurmountable barriers, and that the trench technology is scalable to the 22nm trench and beyond.