Arif Hossain - Academia.edu (original) (raw)
Papers by Arif Hossain
The ultimate goal in transistor scaling is to successfully fabricate (with acceptable yield) stru... more The ultimate goal in transistor scaling is to successfully fabricate (with acceptable yield) structures with ever smaller dimensions to be able to put more functions on a chip. At the end of the roadmap (more than Moore scenario), amongst other devices, nanowire transistors are speculated to replace conventional MOSFET devices. In fact, the 22 nm technology node is based on FinFET technology. Since nanowire transistors belong to the category of silicon on insulator devices, it is expected that self-heating effects will have impact on the transistor operation and will degrade the ONcurrent. In our previous studies [1] we have shown that the degradation effect decreases with shrinking device dimensions due to the pronounced non-stationary transport that manifests itself via the pronounced velocity overshoot effect. Another important aspect related to operation of nanowire transistors is the amount of current degradation due to presence of charged traps placed at arbitrary location of ...
2010 Silicon Nanoelectronics Workshop, 2010
We investigate the role of self-heating effects on the electrical characteristics of a silicon na... more We investigate the role of self-heating effects on the electrical characteristics of a silicon nanowire transistor using a 3-D Monte Carlo device simulator that includes self-consistent solution of the energy balance equations for both acoustic and optical phonons. We find that self-heating effects in the nanowire transistor lead to more than 10.35 % degradation in the ON-current for V G =V D =1 V.
Abstract: Knowledge is the multidimensional outcome of human intellect. Intellectual Property Rig... more Abstract: Knowledge is the multidimensional outcome of human intellect. Intellectual Property Rights system (IPRs) is considered from economic and legal aspect as the ownership rights for the excessive use of innovation and creative work. IPRs are measured to encourage innovation, promote investment in S&T and make the technologies for public benefit. But history shows that from the time of industrial revolution in Europe and during twentieth century in the North America and Japan, IPRs contribute to the S&T driven economic growth. Therefore, there is a fair and consistent relationship between strength of IPRs and per capital income. A recent study of World Bank suggested that the major beneficiaries of IPRs in terms of enhanced value of patents are the developed countries with USA along made an annual gain of US $ 20 billion while developing country face an annual loss of 7.5 billion on royalties and license fees. Moreover, for the developing county, while indigenous technological ...
Advances in Intelligent Systems and Computing, 2021
1. Importance of MC Particle-Based Device Simulations 1.1 Industry Trends and the Need for Modeli... more 1. Importance of MC Particle-Based Device Simulations 1.1 Industry Trends and the Need for Modeling and Simulation 1.2 Drift-Diffusion and Hydrodynamic Models 1.2.1 Extensions of the Drift-Diffusion model 1.2.2 Stratton’s Approach 1.2.3 Balance Equations Model 1.3 Failure of the Drift-Diffusion and Hydrodynamic Models 2. Bulk Monte Carlo Method 2.1 Monte Carlo and Path-Integral Methods 2.2 Bulk Monte Carlo Method 3. Particle-Based Device Simulation 3.1 Calculation of the current 3.2 Ohmic Contacts 3.3 Time Step 3.4 Particle-mesh (PM) coupling 3.5 Higher order effects 3.5.1 Pauli exclusion principle 3.5.2 Carrier-carrier interactions 3.5.3 Band to Band Impact Ionization 4. Quantum Corrections 4.1 Effective Potential Approach 4.2 Effective Potential from the Wigner-Boltzmann Equation 4.3 Description of Gate Current Models Used in Device Simulations 5. Representative simulation results 5.1 Bulk Monte Carlo Simulations of Different Materials 5.2 Particle-Based Device Simulations of Rand...
Advances in Automation, Signal Processing, Instrumentation, and Control, 2021
The work is focused on numeric analysis of compressible flow around National Renewable Energy Lab... more The work is focused on numeric analysis of compressible flow around National Renewable Energy Laboratory (NREL) phase VI wind turbine blade airfoil S809. Although wind turbine airfoils are low Reynolds number airfoils, a reasonable investigation of compressible flow under extreme condition might be helpful. A subsonic flow (mach no. = 0.8) has been considered for this analysis and the impacts of this flow under seven different angles of attack have been determined. The results show that shock takes place just after the mid span at the top surface and just before the mid span at the bottom surface at zero angle of attack. Slowly the shock waves translate their positions as angle of attack increases. A relative translation of the shock waves in upper and lower face of the airfoil are presented. Variation of Turbulent viscosity ratio and surface Y+ have also been determined. A k-SST turbulent model is considered and the commercial CFD code ANSYS FLUENT is used to find the pressure coefficient (Cp) as well as the lift (CL) and drag coefficients (CD). A graphical comparison of shock propagation has been shown with different angle of attack. Flow separation and stream function are also determined.
50th AIAA/ASME/SAE/ASEE Joint Propulsion Conference, 2014
ABSTRACT
Journal of Computational Electronics, 2012
ABSTRACT In this paper we present a study of self-heating effects in nanoscale SOI (Silicon-On-In... more ABSTRACT In this paper we present a study of self-heating effects in nanoscale SOI (Silicon-On-Insulator) devices and conventional MOSFETs using an in-house electro-thermal particle-based device simulator. We first describe the key features of the electro-thermal Monte Carlo device simulator (the two-dimensional (2D) and the three-dimensional version (3D) of the tool) and then we present a series of representative simulation results that clearly illustrate the importance of self-heating in larger nanoscale devices made in SOI technology. Our simulation results for planar SOI devices (using 2D version of the tool) show that in the smallest devices considered, heat dissipation occurs in the contacts, not in the active channel region of the device. This is because of two factors: pronounced velocity overshoot effect and the smaller thermal resistance of the buried oxide layer. We propose methods in which heat can be effectively removed from the device by using silicon on diamond and silicon on AlN technologies. To simulate self heating in nanowire transistors, the 2D simulator was extended to three spatial dimensions. We study the interplay of Coulomb interactions due to the presence of a random trap at the source end of the channel in nanowire transistors, the influence of a positive and a negative trap on the magnitude of the on-current and the role of the potential barrier at the source end of the channel. Finally, we examine the importance of self-heating effects in conventional MOSFETs used for low-power applications. We find that the average temperature increase obtained with our simulator of about 10 K is almost identical to the value that has to be used in low-power circuit simulations.
The ultimate goal in transistor scaling is to successfully fabricate (with acceptable yield) stru... more The ultimate goal in transistor scaling is to successfully fabricate (with acceptable yield) structures with ever smaller dimensions to be able to put more functions on a chip. At the end of the roadmap (more than Moore scenario), amongst other devices, nanowire transistors are speculated to replace conventional MOSFET devices. In fact, the 22 nm technology node is based on FinFET technology. Since nanowire transistors belong to the category of silicon on insulator devices, it is expected that self-heating effects will have impact on the transistor operation and will degrade the ONcurrent. In our previous studies [1] we have shown that the degradation effect decreases with shrinking device dimensions due to the pronounced non-stationary transport that manifests itself via the pronounced velocity overshoot effect. Another important aspect related to operation of nanowire transistors is the amount of current degradation due to presence of charged traps placed at arbitrary location of ...
2010 Silicon Nanoelectronics Workshop, 2010
We investigate the role of self-heating effects on the electrical characteristics of a silicon na... more We investigate the role of self-heating effects on the electrical characteristics of a silicon nanowire transistor using a 3-D Monte Carlo device simulator that includes self-consistent solution of the energy balance equations for both acoustic and optical phonons. We find that self-heating effects in the nanowire transistor lead to more than 10.35 % degradation in the ON-current for V G =V D =1 V.
Abstract: Knowledge is the multidimensional outcome of human intellect. Intellectual Property Rig... more Abstract: Knowledge is the multidimensional outcome of human intellect. Intellectual Property Rights system (IPRs) is considered from economic and legal aspect as the ownership rights for the excessive use of innovation and creative work. IPRs are measured to encourage innovation, promote investment in S&T and make the technologies for public benefit. But history shows that from the time of industrial revolution in Europe and during twentieth century in the North America and Japan, IPRs contribute to the S&T driven economic growth. Therefore, there is a fair and consistent relationship between strength of IPRs and per capital income. A recent study of World Bank suggested that the major beneficiaries of IPRs in terms of enhanced value of patents are the developed countries with USA along made an annual gain of US $ 20 billion while developing country face an annual loss of 7.5 billion on royalties and license fees. Moreover, for the developing county, while indigenous technological ...
Advances in Intelligent Systems and Computing, 2021
1. Importance of MC Particle-Based Device Simulations 1.1 Industry Trends and the Need for Modeli... more 1. Importance of MC Particle-Based Device Simulations 1.1 Industry Trends and the Need for Modeling and Simulation 1.2 Drift-Diffusion and Hydrodynamic Models 1.2.1 Extensions of the Drift-Diffusion model 1.2.2 Stratton’s Approach 1.2.3 Balance Equations Model 1.3 Failure of the Drift-Diffusion and Hydrodynamic Models 2. Bulk Monte Carlo Method 2.1 Monte Carlo and Path-Integral Methods 2.2 Bulk Monte Carlo Method 3. Particle-Based Device Simulation 3.1 Calculation of the current 3.2 Ohmic Contacts 3.3 Time Step 3.4 Particle-mesh (PM) coupling 3.5 Higher order effects 3.5.1 Pauli exclusion principle 3.5.2 Carrier-carrier interactions 3.5.3 Band to Band Impact Ionization 4. Quantum Corrections 4.1 Effective Potential Approach 4.2 Effective Potential from the Wigner-Boltzmann Equation 4.3 Description of Gate Current Models Used in Device Simulations 5. Representative simulation results 5.1 Bulk Monte Carlo Simulations of Different Materials 5.2 Particle-Based Device Simulations of Rand...
Advances in Automation, Signal Processing, Instrumentation, and Control, 2021
The work is focused on numeric analysis of compressible flow around National Renewable Energy Lab... more The work is focused on numeric analysis of compressible flow around National Renewable Energy Laboratory (NREL) phase VI wind turbine blade airfoil S809. Although wind turbine airfoils are low Reynolds number airfoils, a reasonable investigation of compressible flow under extreme condition might be helpful. A subsonic flow (mach no. = 0.8) has been considered for this analysis and the impacts of this flow under seven different angles of attack have been determined. The results show that shock takes place just after the mid span at the top surface and just before the mid span at the bottom surface at zero angle of attack. Slowly the shock waves translate their positions as angle of attack increases. A relative translation of the shock waves in upper and lower face of the airfoil are presented. Variation of Turbulent viscosity ratio and surface Y+ have also been determined. A k-SST turbulent model is considered and the commercial CFD code ANSYS FLUENT is used to find the pressure coefficient (Cp) as well as the lift (CL) and drag coefficients (CD). A graphical comparison of shock propagation has been shown with different angle of attack. Flow separation and stream function are also determined.
50th AIAA/ASME/SAE/ASEE Joint Propulsion Conference, 2014
ABSTRACT
Journal of Computational Electronics, 2012
ABSTRACT In this paper we present a study of self-heating effects in nanoscale SOI (Silicon-On-In... more ABSTRACT In this paper we present a study of self-heating effects in nanoscale SOI (Silicon-On-Insulator) devices and conventional MOSFETs using an in-house electro-thermal particle-based device simulator. We first describe the key features of the electro-thermal Monte Carlo device simulator (the two-dimensional (2D) and the three-dimensional version (3D) of the tool) and then we present a series of representative simulation results that clearly illustrate the importance of self-heating in larger nanoscale devices made in SOI technology. Our simulation results for planar SOI devices (using 2D version of the tool) show that in the smallest devices considered, heat dissipation occurs in the contacts, not in the active channel region of the device. This is because of two factors: pronounced velocity overshoot effect and the smaller thermal resistance of the buried oxide layer. We propose methods in which heat can be effectively removed from the device by using silicon on diamond and silicon on AlN technologies. To simulate self heating in nanowire transistors, the 2D simulator was extended to three spatial dimensions. We study the interplay of Coulomb interactions due to the presence of a random trap at the source end of the channel in nanowire transistors, the influence of a positive and a negative trap on the magnitude of the on-current and the role of the potential barrier at the source end of the channel. Finally, we examine the importance of self-heating effects in conventional MOSFETs used for low-power applications. We find that the average temperature increase obtained with our simulator of about 10 K is almost identical to the value that has to be used in low-power circuit simulations.