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Artem Shulga

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Papers by Artem Shulga

Research paper thumbnail of Room-temperature direct synthesis of semi-conductive PbS nanocrystal inks for optoelectronic applications

Nature Communications

Lead sulphide (PbS) nanocrystals (NCs) are promising materials for low-cost, high-performance opt... more Lead sulphide (PbS) nanocrystals (NCs) are promising materials for low-cost, high-performance optoelectronic devices. So far, PbS NCs have to be first synthesized with long-alkyl chain organic surface ligands and then be ligand-exchanged with shorter ligands (two-steps) to enable charge transport. However, the initial synthesis of insulated PbS NCs show no necessity and the ligand-exchange process is tedious and extravagant. Herein, we have developed a direct one-step, scalable synthetic method for iodide capped PbS (PbS-I) NC inks. The estimated cost for PbS-I NC inks is decreased to less than 6 ⋅g−1,comparedwith16·g−1, compared with 16 g1,comparedwith16·g−1 for conventional methods. Furthermore, based on these PbS-I NCs, photodetector devices show a high detectivity of 1.4 × 1011Jones and solar cells show an air-stable power conversion efficiency (PCE) up to 10%. This scalable and low-cost direct preparation of high-quality PbS-I NC inks may pave a path for the future commercialization of NC based optoelectronics.

Research paper thumbnail of Quantum Dot Light‐Emitting Transistors—Powerful Research Tools and Their Future Applications

Advanced Functional Materials

In this progress report, the recent work in the field of light-emitting field-effect transistors ... more In this progress report, the recent work in the field of light-emitting field-effect transistors (LEFETs) based on colloidal quantum dots (CQDs) as emitters is highlighted. These devices combine the possibility of electrical switching, as known from field-effect transistors, with the possibility of light emission in a single device. The properties of field-effect transistors and the prerequisites of LEFETs are reviewed, before motivating the use of colloidal quantum dots for light emission. Recent reports on these quantum dot light-emitting field-effect transistors (QDLEFETs) include both materials emitting in the near infrared and the visible spectral range-underlining the great potential and breadth of applications for QDLEFETs. The way in which LEFETs can further the understanding of the CQD material properties-their photophysics as well as the carrier transport through films-is discussed. In addition, an overview of technology areas offering the potential for large impact is provided.

Research paper thumbnail of Room-temperature direct synthesis of semi-conductive PbS nanocrystal inks for optoelectronic applications

Nature Communications

Lead sulphide (PbS) nanocrystals (NCs) are promising materials for low-cost, high-performance opt... more Lead sulphide (PbS) nanocrystals (NCs) are promising materials for low-cost, high-performance optoelectronic devices. So far, PbS NCs have to be first synthesized with long-alkyl chain organic surface ligands and then be ligand-exchanged with shorter ligands (two-steps) to enable charge transport. However, the initial synthesis of insulated PbS NCs show no necessity and the ligand-exchange process is tedious and extravagant. Herein, we have developed a direct one-step, scalable synthetic method for iodide capped PbS (PbS-I) NC inks. The estimated cost for PbS-I NC inks is decreased to less than 6 ⋅g−1,comparedwith16·g−1, compared with 16 g1,comparedwith16·g−1 for conventional methods. Furthermore, based on these PbS-I NCs, photodetector devices show a high detectivity of 1.4 × 1011Jones and solar cells show an air-stable power conversion efficiency (PCE) up to 10%. This scalable and low-cost direct preparation of high-quality PbS-I NC inks may pave a path for the future commercialization of NC based optoelectronics.

Research paper thumbnail of Quantum Dot Light‐Emitting Transistors—Powerful Research Tools and Their Future Applications

Advanced Functional Materials

In this progress report, the recent work in the field of light-emitting field-effect transistors ... more In this progress report, the recent work in the field of light-emitting field-effect transistors (LEFETs) based on colloidal quantum dots (CQDs) as emitters is highlighted. These devices combine the possibility of electrical switching, as known from field-effect transistors, with the possibility of light emission in a single device. The properties of field-effect transistors and the prerequisites of LEFETs are reviewed, before motivating the use of colloidal quantum dots for light emission. Recent reports on these quantum dot light-emitting field-effect transistors (QDLEFETs) include both materials emitting in the near infrared and the visible spectral range-underlining the great potential and breadth of applications for QDLEFETs. The way in which LEFETs can further the understanding of the CQD material properties-their photophysics as well as the carrier transport through films-is discussed. In addition, an overview of technology areas offering the potential for large impact is provided.

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