Asifa Amin - Academia.edu (original) (raw)

Papers by Asifa Amin

Research paper thumbnail of Investigation and Modeling of Multifrequency CV characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures

Research paper thumbnail of High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al2O3, Ferro-Electric Charge-Trap (FEG) GaN-HEMT

IEEE Transactions on Electron Devices

Research paper thumbnail of Impact of Chuck Temperature on Flicker Noise (1/f) Performance of PDSOI n-channel MOSFETs

2022 IEEE Latin American Electron Devices Conference (LAEDC)

Research paper thumbnail of Time-Dependent Dielectric Breakdown in 45-nm PD-SOI N-channel FETs at Cryogenic Temperatures for Quantum Computing Applications

IEEE Transactions on Device and Materials Reliability

Research paper thumbnail of Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications

2022 IEEE International Reliability Physics Symposium (IRPS)

Research paper thumbnail of Ijesrt International Journal of Engineering Sciences & Research Technology Low Power Sram Designs: A Review

With on growing technology scaling, low power operation has become important in VLSI design. SRAM... more With on growing technology scaling, low power operation has become important in VLSI design. SRAM consists large portion of the modern VLSI designs, thus efforts are being made to design low power SRAM using different ways. This paper discusses various existing SRAM designs, consisting of different number of transistors from one another. This paper focuses on the study of these designs and their comparison on the basis of parameters like power dissipation, access time , stability and power delay product. All the SRAM designs has different read write operation and hence different results. It was found that 12T SRAM has better performance in case of power dissipation and power dealy product but high access time than the other existing SRAM cells when compared on the basis of simulation results obtained on 45nm environment using Microwind tool.

Research paper thumbnail of Investigation and Modeling of Multifrequency CV characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures

Research paper thumbnail of High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al2O3, Ferro-Electric Charge-Trap (FEG) GaN-HEMT

IEEE Transactions on Electron Devices

Research paper thumbnail of Impact of Chuck Temperature on Flicker Noise (1/f) Performance of PDSOI n-channel MOSFETs

2022 IEEE Latin American Electron Devices Conference (LAEDC)

Research paper thumbnail of Time-Dependent Dielectric Breakdown in 45-nm PD-SOI N-channel FETs at Cryogenic Temperatures for Quantum Computing Applications

IEEE Transactions on Device and Materials Reliability

Research paper thumbnail of Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications

2022 IEEE International Reliability Physics Symposium (IRPS)

Research paper thumbnail of Ijesrt International Journal of Engineering Sciences & Research Technology Low Power Sram Designs: A Review

With on growing technology scaling, low power operation has become important in VLSI design. SRAM... more With on growing technology scaling, low power operation has become important in VLSI design. SRAM consists large portion of the modern VLSI designs, thus efforts are being made to design low power SRAM using different ways. This paper discusses various existing SRAM designs, consisting of different number of transistors from one another. This paper focuses on the study of these designs and their comparison on the basis of parameters like power dissipation, access time , stability and power delay product. All the SRAM designs has different read write operation and hence different results. It was found that 12T SRAM has better performance in case of power dissipation and power dealy product but high access time than the other existing SRAM cells when compared on the basis of simulation results obtained on 45nm environment using Microwind tool.