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Papers by Robert Bachrach
Solid State Communications, 1969
Abstract The optical absorption of strain reduced thallous iodide films has been measured. Strong... more Abstract The optical absorption of strain reduced thallous iodide films has been measured. Strong absorption of the order of 105 cm-1 is observed and a number of relatively sharp lines appear. An exciton-longitudinal optical phonon coupled state sideband to the first exciton peak is observed.
2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)
A sernicoriductor fkbriccitot is a highly cotnplex system that hosts the process tools capable of... more A sernicoriductor fkbriccitot is a highly cotnplex system that hosts the process tools capable ofnzanuj2cturing IC product devices based upon their process jlows. A typical process flow for a 0.15 p i logic process consists of 300 to 400 steps with 22 to 24 mask steps. A variety of equipment sets and organizational architectures are possible for any process jlow. The results of a cotnpnrative analysis of two such 3oonzrn FAB arcliitectures clre presented in this report. The impact of equipmerit sets on fab Sizing, Cost, and Perfornlance are described as a fiinction of operrrting characteristics.
2000 Winter Simulation Conference Proceedings (Cat. No.00CH37165)
La presente invention concerne un procede et un appareil qu'on utilise pour traiter et condit... more La presente invention concerne un procede et un appareil qu'on utilise pour traiter et conditionner un substrat, telle qu'une partie de pile a combustible. Le procede consiste a deposer sur une partie de la surface du substrat dans une chambre de traitement, une couche de matiere hydrophile formee d'un melange de precurseurs de la couche de matiere hydrophile. Le procede consiste egalement a reduire un angle de contact avec le fluide de la surface du substrat. La couche de matiere hydrophile presente une vitesse de gravure humide inferieure a environ 0,03 A/min, en presence d'environ 10 ppm d'acide fluorhydrique dans de l'eau. La couche de matiere peut etre utilisee pour conditionner diverses parties d'une pile a combustible utiles dans des applications de production d'electricite.
PROBLEM TO BE SOLVED: To reduce the occupied floor area of a treating system with keeping a very ... more PROBLEM TO BE SOLVED: To reduce the occupied floor area of a treating system with keeping a very high throughput and product quality by providing treating chambers different in vertical height and elevator chamber for carrying works between the areas of various treating heights. SOLUTION: The system 10 comprises a lower housing 12 for forming a robot buffer chamber at a first height 16 and upper housing 18 for forming a carrying robot chamber at a second height above the lower housing 12. An elevator chamber 24 is connected to the robot buffer chamber at the lower side 16 and robot carrying chamber at the upper side 22. Using one or more elevator chambers 24, the upper and lower treating positions are stacked to substantially reduce the occupied floor area with keeping specified product quality and throughput.
L'invention concerne un systeme qui peut etre utilise pour former un dispositif photovoltaiqu... more L'invention concerne un systeme qui peut etre utilise pour former un dispositif photovoltaique au moyen de modules de traitement concus pour realiser une ou plusieurs etapes du processus de formation de piles photovoltaiques. L'usine de fabrication de piles photovoltaiques automatisee est un ensemble de modules de traitement automatises et d'equipement d'automatisation utilise pour former des dispositifs equipes de piles photovoltaiques. L'usine de fabrication de piles photovoltaiques comprend, de maniere generale, un module de reception de substrats concu pour recevoir un substrat, un ou plusieurs outils en groupes de depot de couches absorbantes presentant au moins une chambre de traitement, concue pour deposer une couche contenant du silicium a la surface d'un substrat, une ou plusieurs chambres de depot de contact arriere, une ou plusieurs chambres d'elimination de materiaux; un dispositif d'encapsulation de la pile photovoltaique; un module autoc...
La presente invention concerne un procede de recristallisation d'un feuillet de silicium, et ... more La presente invention concerne un procede de recristallisation d'un feuillet de silicium, et en particulier la recristallisation d'un feuillet de silicium a grains fins afin d'ameliorer les proprietes du materiau telles que la taille et l'orientation des grains. Selon un aspect, le procede comprend l'utilisation d'un traitement thermique rapide (RTP) pour faire fondre et recristalliser un ou plus du (des) feuillet(s) de silicium entier(s) dans une sequence de chauffage. Selon un autre aspect, le procede comprend le controle de maniere directionnelle d'une chute de la temperature le long de l'epaisseur du feuillet de sorte a faciliter la production d'un petit nombre de noyaux dans le materiau fondu et leur croissance en de gros grains. Selon un aspect supplementaire, l'invention comprend une chambre de recristallisation dans un flux de traitement total qui permet un traitement a debit eleve des feuillets de silicium ayant les proprietes souhait...
L'invention concerne un procede et un appareil pour former une couche electrochimique de batt... more L'invention concerne un procede et un appareil pour former une couche electrochimique de batterie en couche mince. Un melange precurseur contenant des particules precurseurs a activite electrochimique dispersees dans un milieu de support est introduit dans une chambre de traitement et soumis a un traitement thermique au moyen d'un melange gazeux combustible egalement introduit dans la chambre. Le precurseur est converti en nanocristaux par l'energie thermique, et les nanocristaux sont deposes sur un substrat. Un second precurseur peut etre melange avec les nanocristaux au moment de leur depot sur la surface pour ameliorer l'adherence et la conductivite.
L'invention concerne un procede et un appareil permettant de fabriquer une pile solaire et de... more L'invention concerne un procede et un appareil permettant de fabriquer une pile solaire et de former un contact metallique. Le contact de la pile solaire et son câblage sont formes par depot d'un empilement de films minces constitues d'une premiere matiere metallique et d'une seconde matiere metallique servant de couche d'amorcage ou de couche d'ensemencement pour deposer une couche metallique formant substrat, conjointement a des procedes supplementaires de traitement de feuille, de photolithographie, d'attaque, de nettoyage et de traitement de recuit. Dans un mode de realisation de l'invention, l'empilement de films minces destine a former du siliciure metallique presentant une resistance de contact reduite sur la feuille est depose par pulverisation cathodique ou par depot physique en phase vapeur. Dans un autre mode de realisation de l'invention, la couche metallique formant substrat destinee a former des lignes metalliques et du câblage e...
Nuclear Instruments and Methods in Physics Research, 1983
The results of a design study and current planning are presented for a soft X-ray Synchrotron Rad... more The results of a design study and current planning are presented for a soft X-ray Synchrotron Radiation Beam Line utilizing a permanent magnet undulator insertion on SPEAR at the Stanford Synchrotron Radiation Laboratory. Modeling studies have shown that significant advantages can be obtained in the desired energy range 10-1000 eV using such a device rather than a bending magnet. The parameters which achieve this energy range best characterize the device as between a wiggler and an undulator. We have named this device a wunder and are pursuing its implementation. Relative to a bending magnet, one gains approximately two orders of magnitude of useful flux and in addition, the horizontal beam divergence is reduced by approximately one order of magnitude. The various aspects of the project are reviewed, including expected input power from the wunder, strategies for cooling the optical components, and the beam transport and LOCUST monochromator design.
Nuclear Instruments and Methods, 1978
ABSTRACT Spectral distribution measurements have been made on the large, super-smooth, copper M0 ... more ABSTRACT Spectral distribution measurements have been made on the large, super-smooth, copper M0 collection mirrors used on the Stanford Synchrotron-Radiation Laboratory 4° beam line. The recent installation of a new mirror has presented the opportunity to characterize the effect of the high synchrotron flux on such mirrors. The original mirror was found to have an RMS roughness (186±14) Å, while the new mirror has a roughness of (38.9±1.6) Å. Visual observation of the original mirror showed no evidence for carbon buildup resulting from hydrocarbon cracking in the presence of the intense synchrotron radiation. A dramatic improvement in the spectral throughput of the beam line was observed upon installation of the smoother mirror. This amounted to an order of magnitude improvement before the dispersive loss at the carbon K edge. the monochromatized contrast at the carbon K edge is found to be betterthan 60:1. The effective cutoff range of the monochromator (where the monochromatized contrast is 1) has been extended to above 700 eV. Examples of high-energy photoemission measurements will be given.
Review of Scientific Instruments, 1981
A high-resolution, angle-resolved photoemission electron spectrometer has been built which incorp... more A high-resolution, angle-resolved photoemission electron spectrometer has been built which incorporates a position-sensitive multidetection system. The spectrometer is a 180 ° hemispherical electrostatic deflection analyzer utilizing preretardation, 1.5 ° angle-resolving optics mounted on a two-axis angular manipulator. Combined with the sample holder, independent control of the polar and azimuthal angles of both the sample and detector are available. The multidetection spectrometer collects through a PDP-11 based data acquisition and control system up to 32 resolution elements per spectral frame.
Nuclear Instruments and Methods in Physics Research, 1984
SSRL Beam Line Wunder will be the first soft X-ray energy range synchrotron radiation beam line s... more SSRL Beam Line Wunder will be the first soft X-ray energy range synchrotron radiation beam line specifically designed to exploit the unique aspects of periodic insertion devices in the wiggler-undulator (wunder) regime. Aspects of the development of this beam line are described in this paper and in particular, we discuss the design methodology adopted and emphasize the joint optical, thermal and mechanical optimization studies that were required.
Journal of Vacuum Science and Technology, 1981
The room temperature surface reconstructions of GaAs and AlAs have been investigated with angle i... more The room temperature surface reconstructions of GaAs and AlAs have been investigated with angle integrated photoemission as a function of the metal to arsenic ratio. Detailed information on both the (110) and (100) surface as a function of reconstruction has been obtained from changes in the surface core level intensities, binding energy shifts, and changes in the surface valence band density of states. The GaAs(100) surface shows ordered reconstructions over a wide composition range. The ordering proceeds through a series of centered structures formed from As and vacancies in the outer layer in the As rich range to noncentered structures derived from As, Ga antisite defects, and vacancies on the Ga rich end. The AlAs(100) surface is predominantly disordered and only a 3×2 reconstruction was found in a narrow composition range. Aspects of the Al–Ga exchange reaction on GaAs(110) are discussed.
Solid State Communications, 1969
Abstract The optical absorption of strain reduced thallous iodide films has been measured. Strong... more Abstract The optical absorption of strain reduced thallous iodide films has been measured. Strong absorption of the order of 105 cm-1 is observed and a number of relatively sharp lines appear. An exciton-longitudinal optical phonon coupled state sideband to the first exciton peak is observed.
2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)
A sernicoriductor fkbriccitot is a highly cotnplex system that hosts the process tools capable of... more A sernicoriductor fkbriccitot is a highly cotnplex system that hosts the process tools capable ofnzanuj2cturing IC product devices based upon their process jlows. A typical process flow for a 0.15 p i logic process consists of 300 to 400 steps with 22 to 24 mask steps. A variety of equipment sets and organizational architectures are possible for any process jlow. The results of a cotnpnrative analysis of two such 3oonzrn FAB arcliitectures clre presented in this report. The impact of equipmerit sets on fab Sizing, Cost, and Perfornlance are described as a fiinction of operrrting characteristics.
2000 Winter Simulation Conference Proceedings (Cat. No.00CH37165)
La presente invention concerne un procede et un appareil qu'on utilise pour traiter et condit... more La presente invention concerne un procede et un appareil qu'on utilise pour traiter et conditionner un substrat, telle qu'une partie de pile a combustible. Le procede consiste a deposer sur une partie de la surface du substrat dans une chambre de traitement, une couche de matiere hydrophile formee d'un melange de precurseurs de la couche de matiere hydrophile. Le procede consiste egalement a reduire un angle de contact avec le fluide de la surface du substrat. La couche de matiere hydrophile presente une vitesse de gravure humide inferieure a environ 0,03 A/min, en presence d'environ 10 ppm d'acide fluorhydrique dans de l'eau. La couche de matiere peut etre utilisee pour conditionner diverses parties d'une pile a combustible utiles dans des applications de production d'electricite.
PROBLEM TO BE SOLVED: To reduce the occupied floor area of a treating system with keeping a very ... more PROBLEM TO BE SOLVED: To reduce the occupied floor area of a treating system with keeping a very high throughput and product quality by providing treating chambers different in vertical height and elevator chamber for carrying works between the areas of various treating heights. SOLUTION: The system 10 comprises a lower housing 12 for forming a robot buffer chamber at a first height 16 and upper housing 18 for forming a carrying robot chamber at a second height above the lower housing 12. An elevator chamber 24 is connected to the robot buffer chamber at the lower side 16 and robot carrying chamber at the upper side 22. Using one or more elevator chambers 24, the upper and lower treating positions are stacked to substantially reduce the occupied floor area with keeping specified product quality and throughput.
L'invention concerne un systeme qui peut etre utilise pour former un dispositif photovoltaiqu... more L'invention concerne un systeme qui peut etre utilise pour former un dispositif photovoltaique au moyen de modules de traitement concus pour realiser une ou plusieurs etapes du processus de formation de piles photovoltaiques. L'usine de fabrication de piles photovoltaiques automatisee est un ensemble de modules de traitement automatises et d'equipement d'automatisation utilise pour former des dispositifs equipes de piles photovoltaiques. L'usine de fabrication de piles photovoltaiques comprend, de maniere generale, un module de reception de substrats concu pour recevoir un substrat, un ou plusieurs outils en groupes de depot de couches absorbantes presentant au moins une chambre de traitement, concue pour deposer une couche contenant du silicium a la surface d'un substrat, une ou plusieurs chambres de depot de contact arriere, une ou plusieurs chambres d'elimination de materiaux; un dispositif d'encapsulation de la pile photovoltaique; un module autoc...
La presente invention concerne un procede de recristallisation d'un feuillet de silicium, et ... more La presente invention concerne un procede de recristallisation d'un feuillet de silicium, et en particulier la recristallisation d'un feuillet de silicium a grains fins afin d'ameliorer les proprietes du materiau telles que la taille et l'orientation des grains. Selon un aspect, le procede comprend l'utilisation d'un traitement thermique rapide (RTP) pour faire fondre et recristalliser un ou plus du (des) feuillet(s) de silicium entier(s) dans une sequence de chauffage. Selon un autre aspect, le procede comprend le controle de maniere directionnelle d'une chute de la temperature le long de l'epaisseur du feuillet de sorte a faciliter la production d'un petit nombre de noyaux dans le materiau fondu et leur croissance en de gros grains. Selon un aspect supplementaire, l'invention comprend une chambre de recristallisation dans un flux de traitement total qui permet un traitement a debit eleve des feuillets de silicium ayant les proprietes souhait...
L'invention concerne un procede et un appareil pour former une couche electrochimique de batt... more L'invention concerne un procede et un appareil pour former une couche electrochimique de batterie en couche mince. Un melange precurseur contenant des particules precurseurs a activite electrochimique dispersees dans un milieu de support est introduit dans une chambre de traitement et soumis a un traitement thermique au moyen d'un melange gazeux combustible egalement introduit dans la chambre. Le precurseur est converti en nanocristaux par l'energie thermique, et les nanocristaux sont deposes sur un substrat. Un second precurseur peut etre melange avec les nanocristaux au moment de leur depot sur la surface pour ameliorer l'adherence et la conductivite.
L'invention concerne un procede et un appareil permettant de fabriquer une pile solaire et de... more L'invention concerne un procede et un appareil permettant de fabriquer une pile solaire et de former un contact metallique. Le contact de la pile solaire et son câblage sont formes par depot d'un empilement de films minces constitues d'une premiere matiere metallique et d'une seconde matiere metallique servant de couche d'amorcage ou de couche d'ensemencement pour deposer une couche metallique formant substrat, conjointement a des procedes supplementaires de traitement de feuille, de photolithographie, d'attaque, de nettoyage et de traitement de recuit. Dans un mode de realisation de l'invention, l'empilement de films minces destine a former du siliciure metallique presentant une resistance de contact reduite sur la feuille est depose par pulverisation cathodique ou par depot physique en phase vapeur. Dans un autre mode de realisation de l'invention, la couche metallique formant substrat destinee a former des lignes metalliques et du câblage e...
Nuclear Instruments and Methods in Physics Research, 1983
The results of a design study and current planning are presented for a soft X-ray Synchrotron Rad... more The results of a design study and current planning are presented for a soft X-ray Synchrotron Radiation Beam Line utilizing a permanent magnet undulator insertion on SPEAR at the Stanford Synchrotron Radiation Laboratory. Modeling studies have shown that significant advantages can be obtained in the desired energy range 10-1000 eV using such a device rather than a bending magnet. The parameters which achieve this energy range best characterize the device as between a wiggler and an undulator. We have named this device a wunder and are pursuing its implementation. Relative to a bending magnet, one gains approximately two orders of magnitude of useful flux and in addition, the horizontal beam divergence is reduced by approximately one order of magnitude. The various aspects of the project are reviewed, including expected input power from the wunder, strategies for cooling the optical components, and the beam transport and LOCUST monochromator design.
Nuclear Instruments and Methods, 1978
ABSTRACT Spectral distribution measurements have been made on the large, super-smooth, copper M0 ... more ABSTRACT Spectral distribution measurements have been made on the large, super-smooth, copper M0 collection mirrors used on the Stanford Synchrotron-Radiation Laboratory 4° beam line. The recent installation of a new mirror has presented the opportunity to characterize the effect of the high synchrotron flux on such mirrors. The original mirror was found to have an RMS roughness (186±14) Å, while the new mirror has a roughness of (38.9±1.6) Å. Visual observation of the original mirror showed no evidence for carbon buildup resulting from hydrocarbon cracking in the presence of the intense synchrotron radiation. A dramatic improvement in the spectral throughput of the beam line was observed upon installation of the smoother mirror. This amounted to an order of magnitude improvement before the dispersive loss at the carbon K edge. the monochromatized contrast at the carbon K edge is found to be betterthan 60:1. The effective cutoff range of the monochromator (where the monochromatized contrast is 1) has been extended to above 700 eV. Examples of high-energy photoemission measurements will be given.
Review of Scientific Instruments, 1981
A high-resolution, angle-resolved photoemission electron spectrometer has been built which incorp... more A high-resolution, angle-resolved photoemission electron spectrometer has been built which incorporates a position-sensitive multidetection system. The spectrometer is a 180 ° hemispherical electrostatic deflection analyzer utilizing preretardation, 1.5 ° angle-resolving optics mounted on a two-axis angular manipulator. Combined with the sample holder, independent control of the polar and azimuthal angles of both the sample and detector are available. The multidetection spectrometer collects through a PDP-11 based data acquisition and control system up to 32 resolution elements per spectral frame.
Nuclear Instruments and Methods in Physics Research, 1984
SSRL Beam Line Wunder will be the first soft X-ray energy range synchrotron radiation beam line s... more SSRL Beam Line Wunder will be the first soft X-ray energy range synchrotron radiation beam line specifically designed to exploit the unique aspects of periodic insertion devices in the wiggler-undulator (wunder) regime. Aspects of the development of this beam line are described in this paper and in particular, we discuss the design methodology adopted and emphasize the joint optical, thermal and mechanical optimization studies that were required.
Journal of Vacuum Science and Technology, 1981
The room temperature surface reconstructions of GaAs and AlAs have been investigated with angle i... more The room temperature surface reconstructions of GaAs and AlAs have been investigated with angle integrated photoemission as a function of the metal to arsenic ratio. Detailed information on both the (110) and (100) surface as a function of reconstruction has been obtained from changes in the surface core level intensities, binding energy shifts, and changes in the surface valence band density of states. The GaAs(100) surface shows ordered reconstructions over a wide composition range. The ordering proceeds through a series of centered structures formed from As and vacancies in the outer layer in the As rich range to noncentered structures derived from As, Ga antisite defects, and vacancies on the Ga rich end. The AlAs(100) surface is predominantly disordered and only a 3×2 reconstruction was found in a narrow composition range. Aspects of the Al–Ga exchange reaction on GaAs(110) are discussed.