Benno Orschel - Academia.edu (original) (raw)

Papers by Benno Orschel

AIP Conference Proceedings, 2005

ABSTRACT Clean thermal processing (CTP) was developed to reduce silicon wafer metal contamination... more ABSTRACT Clean thermal processing (CTP) was developed to reduce silicon wafer metal contamination. Silicon carbide (SiC) and quartz boats were investigated to find and eliminate Fe contamination sources at 1050 and 1250°C. Contamination originates from (a) metal diffusion in direct wafer to boat contact area (MDD - Metals Direct Diffusion) and (b) as adsorption of metal species from gas phase (MAG - Metals Adsorption from Gas Phase). To reduce both, MDD and MAG contamination, additional cleaning procedures were implemented using Trans-LC treatment at 1250°C, followed by steam oxidation. Metal contamination levels were evaluated using surface photo-voltage (SPV), photo-conductance decay (PCD) and photoluminescence (PL) high-resolution mapping. SPV iron, PCD lifetime and PL intensity maps indicate cleaning procedures are effective for both Quartz and SiC boats.

Journal of Applied Physics, 2010

Two-side surface photovoltage ͑TS-SPV͒ based on measuring SPV from both wafer sides is proposed a... more Two-side surface photovoltage ͑TS-SPV͒ based on measuring SPV from both wafer sides is proposed as the approach for silicon iron contamination monitoring. TS-SPV is applied to follow diffusion of implanted iron in a lightly doped p-type silicon during rapid thermal anneal ͑RTA͒. Good correlation is found between the iron distribution versus RTA conditions in the range of 375-1100°C. The impact of thermal donors in silicon after RTA at below 700°C is illustrated. The portion of iron detectable by SPV ͑FeB pairs͒ is found as a function of RTA time and temperature. Iron diffusion activation energy was evaluated for the interstitial ionized iron Fe i+ and for the interstitial neutral iron Fe i0. Low thermal budget RTA combined with TS-SPV has been proven to be an effective iron contamination monitor to identify contamination sources, character, and location.

L'invention concerne un procede et des dispositifs de mesure d'une ou de plusieurs propri... more L'invention concerne un procede et des dispositifs de mesure d'une ou de plusieurs proprietes d'un echantillon (16), et a pour but de reduire le temps de mesure pour un tel procede. A cet effet, des parametres individuels de l'echantillon (10) sont modifies de facon appropriee, et l'on produit un ou plusieurs signaux de mesure modulables (20, 20A, 20B) qui renferment chacun une grandeur de mesure a determiner, fonction d'un ou de plusieurs parametres de l'echantillon (10). Les signaux de mesure (20, 20A, 20B) sont detectes pour la production de signaux detecteurs (30), et les grandeurs de mesure sont determinees a partir des signaux detecteurs ainsi produits (30). Les signaux de mesure (20, 20A, 20B) sont soumis, avant detection, a une modulation par des parametres de modulation determines. Les signaux de mesure modules (20, 20A, 20B) sont alors integres par rapport au temps, et les informations relatives aux grandeurs de mesure sont determinees au moyen ...

ECS Transactions, 2006

One major source of metals contamination during high temperature processing are metals pre-deposi... more One major source of metals contamination during high temperature processing are metals pre-deposited on the wafers surface before thermal treatment and metals cross- contamination from other wafers and/or furnace components. This study investigates the mechanism of metals transfer via gas phase vs. temperature and oxygen gas flow conditions. We also investigated the cross-contamination from Silicon Carbide (SiC) components at elevated temperatures. Cross-contamination from SiC can be explained as (a) metal diffusion from the direct contact area between silicon wafer and SiC (MDD - Metals Direct Diffusion) and (b) metal desorption from the SiC surface and re-adsorption on the silicon wafer surface from the gas phase (MAG - Metals Adsorption from Gas Phase). Both MDD and MAG contamination components are driven by SiC surface metal contamination. Using high resolution Surface Photo- Voltage (SPV) iron mapping we investigated the character of iron cross-contamination. Iron diffusion and...

We use photoluminescence to examine GaAs/(AlGa)As single quantum wells of different thickness gro... more We use photoluminescence to examine GaAs/(AlGa)As single quantum wells of different thickness grown by molecular beam epitaxy with and without growth interruptions. We observed distinctive peaks arising from the heavy-hole exciton splitting associated with heterointerface growth "islands." Comparison of the exciton peak energies with the predictions of the theory proposed by L. C. Andreani and A. Pasquarello [Phys. Rev. B 42, 8928 (1990)] (which was supported by independent experiments) yields a constant value of 0.85 monolayers for the apparent thickness fluctuations given rise to the different exciton peaks observed from each well. This behavior strongly supports the bimodal roughness model of the heterointerface in quantum wells prepared with growth interruptions as it was recently suggested by C. A.

Physical Review B, 1994

High-quality molecular-beam-epitaxy-grown decoupled GaAs-(Al, Ga)As multiple quantum wells (MQW) ... more High-quality molecular-beam-epitaxy-grown decoupled GaAs-(Al, Ga)As multiple quantum wells (MQW) of various well thickness (2.7 Ls 11.9 nm; x=0.3) and different barrier compositions (0.12 x 1; L~= 11 nm) have been studied by x-ray diffraction (XRD), photoluminescence excitation, and emission (PL). The temperature dependence of the MQW properties has also been studied. The well width and barrier composition of the MQW were obtained by XRD and PL, respectively. 2s-excitonic features and the free electron-hole sublevel transitions can be resolved. We compare the 1s-2s energy difference and the ground-state binding energies of the heavy-and light-hole excitons with a recent accurate theory of exciton binding energies, taking the structure parameters from an independent determination. Experimental and theoretical values of the heavy-and light-hole exciton binding energies are found to agree within 1 meV. The theoretically predicted and experimentally observed excitonic transition energies associated with the lowest (n =1) electron, heavy-hole, and light-hole sublevels agree well, if the theoretical approach includes the split-off valence band. Interpolation formulas for the heavy-and light-hole ground-state exciton binding energies and for the n = 1 electron, heavy-, and light-hole sublevel energies are given.

Journal of Applied Physics, 2010

Two-side surface photovoltage ͑TS-SPV͒ based on measuring SPV from both wafer sides is proposed a... more Two-side surface photovoltage ͑TS-SPV͒ based on measuring SPV from both wafer sides is proposed as the approach for silicon iron contamination monitoring. TS-SPV is applied to follow diffusion of implanted iron in a lightly doped p-type silicon during rapid thermal anneal ͑RTA͒. Good correlation is found between the iron distribution versus RTA conditions in the range of 375-1100°C. The impact of thermal donors in silicon after RTA at below 700°C is illustrated. The portion of iron detectable by SPV ͑FeB pairs͒ is found as a function of RTA time and temperature. Iron diffusion activation energy was evaluated for the interstitial ionized iron Fe i+ and for the interstitial neutral iron Fe i0. Low thermal budget RTA combined with TS-SPV has been proven to be an effective iron contamination monitor to identify contamination sources, character, and location.

Electro Chemical Society, 2003

A photoluminescence ͑PL͒ signal has been modeled under conditions of steady-state, depth-dependen... more A photoluminescence ͑PL͒ signal has been modeled under conditions of steady-state, depth-dependent excitation, ignored surface recombination, and neglected carrier diffusion. In spite of serious model limitations, the experimental data of PL vs. resistivity collected in the 0.0009 to 20 ⍀ cm range showed a reasonably good agreement with the simulation output. The PL signal reaches maximum within the 0.01 to 0.1 ⍀ cm range. At lower resistivity, the signal strongly depends on doping level and it can be used for doping striation monitoring. At higher resistivity, PL depends on the applied excitation levels and the concentration of deep recombination centers ͑material contamination͒. Within the entire range, PL can be used for imaging of extended defects, such as dislocations and precipitates.

J. Appl. Phys., 1993

The photoluminescence (PL) peak positions of the ground state heavy and light-hole excitons on hi... more The photoluminescence (PL) peak positions of the ground state heavy and light-hole excitons on high-quality Molecular Beam Epitaxy grown GaAs/A1,Ga,-.& (x=0.3 and 1) multiquantum-well structures have been experimentally determined in the temperature range 4.2<T<340 K. Using these values and the well-known low-temperature energy of the GaAs I'srFsc gap [EL(GaAs,T=O K) = 1.5192 ev], we propose the temperature dependence to be E~(GaAs,T)=1.5192+5.16X10~5XT-l.99X10~6~T2+2.60~10~gXT3 (ELineV). The nearly linear variation of EF(GaAs,T) versus the temperature in the range 170 K<T<340 K can be approximated by a coefficient (dEF/dT) =-4.4X 10m4 eV/K, in excellent agreement with theoretical predictions.

Verfahren zur Messung von einer oder mehreren Eigenschaften einer Probe (10), bei welchem (a) zum... more Verfahren zur Messung von einer oder mehreren Eigenschaften einer Probe (10), bei welchem (a) zumindest einer Parameter der Probe (10) zeitlich definiert verandert wird, (b) ein oder mehrere modulierbare Messignale (20,20A,20B) erzeugt werden, welche zumindest jeweils eine von zumindest einem der zeitlich veranderten Parameter der Probe (10) abhangige, zu ermittelnde Mesgrose enthalten, (c) das bzw. die Messignale (20,20A,20B) zur Erzeugung von Detektorsignalen (30) detektiert werden, (d) die Mesgrose bzw. die Mesgrosen aus den erzeugten Detektorsignalen (30) ermittelt werden, (e) das bzw. die Messignale (20,20A,20B) nach Verlassen der Probe (10) und vor dem Detektieren einer von der zeitlichen definierten Veranderung des bzw. der Parameter der Probe (10) abhangigen Modulation mit bestimmten Modulationsparametern unterworfen werden, (f) das bzw. die modulierten Messignale (20,20A,20B) zeitlich integriert werden, und (g) Aussagen uber die Mesgrosen anhand der Detektorsignale (30) und...

To determine the dependence of a first measured quantity (Y) on a second measured quantity (P) th... more To determine the dependence of a first measured quantity (Y) on a second measured quantity (P) the second measured quantity (P) is periodically modified with a frequency (f0). The first measured quantity (Y), which changes accordingly, is measured. From the first measurement signal of the first measured quantity (Y) the components of the first measured quantity (Y) are determined with at least a plurality of frequencies. From the components determined in this way the first measured quantity (Y) is reconstructed by signal processing for at least a plurality of values of the second measured quantity (P).

A method for measuring one or more properties of a sample (10), wherein (A) is changed over time ... more A method for measuring one or more properties of a sample (10), wherein (A) is changed over time defining at least one parameter of the sample (10), (B) containing one or more modulated measuring signals (20,20A, 20B) are generated, which is at least dependent in each case one of at least one of the temporally altered parameter of the sample (10) to be detected measurable variable, (C) or the measurement signals (20,20A, 20B) for generating detector signals (30) are detected, (D) the measured variable or measured variables are determined from the generated detector signals (30) (E) or the measurement signals (20,20A, 20B) are subjected after leaving the sample (10) and prior to detection of a defined by the time variation of the parameter or the sample (10) dependent modulation with specific modulation parameters, (F) or the modulated measuring signals (20,20A, 20B) are integrated over time, and (G) determined statements about the measured variables on the basis of the detection sig...

AIP Conference Proceedings, 2005

ABSTRACT Clean thermal processing (CTP) was developed to reduce silicon wafer metal contamination... more ABSTRACT Clean thermal processing (CTP) was developed to reduce silicon wafer metal contamination. Silicon carbide (SiC) and quartz boats were investigated to find and eliminate Fe contamination sources at 1050 and 1250°C. Contamination originates from (a) metal diffusion in direct wafer to boat contact area (MDD - Metals Direct Diffusion) and (b) as adsorption of metal species from gas phase (MAG - Metals Adsorption from Gas Phase). To reduce both, MDD and MAG contamination, additional cleaning procedures were implemented using Trans-LC treatment at 1250°C, followed by steam oxidation. Metal contamination levels were evaluated using surface photo-voltage (SPV), photo-conductance decay (PCD) and photoluminescence (PL) high-resolution mapping. SPV iron, PCD lifetime and PL intensity maps indicate cleaning procedures are effective for both Quartz and SiC boats.

Journal of Applied Physics, 2010

Two-side surface photovoltage ͑TS-SPV͒ based on measuring SPV from both wafer sides is proposed a... more Two-side surface photovoltage ͑TS-SPV͒ based on measuring SPV from both wafer sides is proposed as the approach for silicon iron contamination monitoring. TS-SPV is applied to follow diffusion of implanted iron in a lightly doped p-type silicon during rapid thermal anneal ͑RTA͒. Good correlation is found between the iron distribution versus RTA conditions in the range of 375-1100°C. The impact of thermal donors in silicon after RTA at below 700°C is illustrated. The portion of iron detectable by SPV ͑FeB pairs͒ is found as a function of RTA time and temperature. Iron diffusion activation energy was evaluated for the interstitial ionized iron Fe i+ and for the interstitial neutral iron Fe i0. Low thermal budget RTA combined with TS-SPV has been proven to be an effective iron contamination monitor to identify contamination sources, character, and location.

L'invention concerne un procede et des dispositifs de mesure d'une ou de plusieurs propri... more L'invention concerne un procede et des dispositifs de mesure d'une ou de plusieurs proprietes d'un echantillon (16), et a pour but de reduire le temps de mesure pour un tel procede. A cet effet, des parametres individuels de l'echantillon (10) sont modifies de facon appropriee, et l'on produit un ou plusieurs signaux de mesure modulables (20, 20A, 20B) qui renferment chacun une grandeur de mesure a determiner, fonction d'un ou de plusieurs parametres de l'echantillon (10). Les signaux de mesure (20, 20A, 20B) sont detectes pour la production de signaux detecteurs (30), et les grandeurs de mesure sont determinees a partir des signaux detecteurs ainsi produits (30). Les signaux de mesure (20, 20A, 20B) sont soumis, avant detection, a une modulation par des parametres de modulation determines. Les signaux de mesure modules (20, 20A, 20B) sont alors integres par rapport au temps, et les informations relatives aux grandeurs de mesure sont determinees au moyen ...

ECS Transactions, 2006

One major source of metals contamination during high temperature processing are metals pre-deposi... more One major source of metals contamination during high temperature processing are metals pre-deposited on the wafers surface before thermal treatment and metals cross- contamination from other wafers and/or furnace components. This study investigates the mechanism of metals transfer via gas phase vs. temperature and oxygen gas flow conditions. We also investigated the cross-contamination from Silicon Carbide (SiC) components at elevated temperatures. Cross-contamination from SiC can be explained as (a) metal diffusion from the direct contact area between silicon wafer and SiC (MDD - Metals Direct Diffusion) and (b) metal desorption from the SiC surface and re-adsorption on the silicon wafer surface from the gas phase (MAG - Metals Adsorption from Gas Phase). Both MDD and MAG contamination components are driven by SiC surface metal contamination. Using high resolution Surface Photo- Voltage (SPV) iron mapping we investigated the character of iron cross-contamination. Iron diffusion and...

We use photoluminescence to examine GaAs/(AlGa)As single quantum wells of different thickness gro... more We use photoluminescence to examine GaAs/(AlGa)As single quantum wells of different thickness grown by molecular beam epitaxy with and without growth interruptions. We observed distinctive peaks arising from the heavy-hole exciton splitting associated with heterointerface growth "islands." Comparison of the exciton peak energies with the predictions of the theory proposed by L. C. Andreani and A. Pasquarello [Phys. Rev. B 42, 8928 (1990)] (which was supported by independent experiments) yields a constant value of 0.85 monolayers for the apparent thickness fluctuations given rise to the different exciton peaks observed from each well. This behavior strongly supports the bimodal roughness model of the heterointerface in quantum wells prepared with growth interruptions as it was recently suggested by C. A.

Physical Review B, 1994

High-quality molecular-beam-epitaxy-grown decoupled GaAs-(Al, Ga)As multiple quantum wells (MQW) ... more High-quality molecular-beam-epitaxy-grown decoupled GaAs-(Al, Ga)As multiple quantum wells (MQW) of various well thickness (2.7 Ls 11.9 nm; x=0.3) and different barrier compositions (0.12 x 1; L~= 11 nm) have been studied by x-ray diffraction (XRD), photoluminescence excitation, and emission (PL). The temperature dependence of the MQW properties has also been studied. The well width and barrier composition of the MQW were obtained by XRD and PL, respectively. 2s-excitonic features and the free electron-hole sublevel transitions can be resolved. We compare the 1s-2s energy difference and the ground-state binding energies of the heavy-and light-hole excitons with a recent accurate theory of exciton binding energies, taking the structure parameters from an independent determination. Experimental and theoretical values of the heavy-and light-hole exciton binding energies are found to agree within 1 meV. The theoretically predicted and experimentally observed excitonic transition energies associated with the lowest (n =1) electron, heavy-hole, and light-hole sublevels agree well, if the theoretical approach includes the split-off valence band. Interpolation formulas for the heavy-and light-hole ground-state exciton binding energies and for the n = 1 electron, heavy-, and light-hole sublevel energies are given.

Journal of Applied Physics, 2010

Two-side surface photovoltage ͑TS-SPV͒ based on measuring SPV from both wafer sides is proposed a... more Two-side surface photovoltage ͑TS-SPV͒ based on measuring SPV from both wafer sides is proposed as the approach for silicon iron contamination monitoring. TS-SPV is applied to follow diffusion of implanted iron in a lightly doped p-type silicon during rapid thermal anneal ͑RTA͒. Good correlation is found between the iron distribution versus RTA conditions in the range of 375-1100°C. The impact of thermal donors in silicon after RTA at below 700°C is illustrated. The portion of iron detectable by SPV ͑FeB pairs͒ is found as a function of RTA time and temperature. Iron diffusion activation energy was evaluated for the interstitial ionized iron Fe i+ and for the interstitial neutral iron Fe i0. Low thermal budget RTA combined with TS-SPV has been proven to be an effective iron contamination monitor to identify contamination sources, character, and location.

Electro Chemical Society, 2003

A photoluminescence ͑PL͒ signal has been modeled under conditions of steady-state, depth-dependen... more A photoluminescence ͑PL͒ signal has been modeled under conditions of steady-state, depth-dependent excitation, ignored surface recombination, and neglected carrier diffusion. In spite of serious model limitations, the experimental data of PL vs. resistivity collected in the 0.0009 to 20 ⍀ cm range showed a reasonably good agreement with the simulation output. The PL signal reaches maximum within the 0.01 to 0.1 ⍀ cm range. At lower resistivity, the signal strongly depends on doping level and it can be used for doping striation monitoring. At higher resistivity, PL depends on the applied excitation levels and the concentration of deep recombination centers ͑material contamination͒. Within the entire range, PL can be used for imaging of extended defects, such as dislocations and precipitates.

J. Appl. Phys., 1993

The photoluminescence (PL) peak positions of the ground state heavy and light-hole excitons on hi... more The photoluminescence (PL) peak positions of the ground state heavy and light-hole excitons on high-quality Molecular Beam Epitaxy grown GaAs/A1,Ga,-.& (x=0.3 and 1) multiquantum-well structures have been experimentally determined in the temperature range 4.2<T<340 K. Using these values and the well-known low-temperature energy of the GaAs I'srFsc gap [EL(GaAs,T=O K) = 1.5192 ev], we propose the temperature dependence to be E~(GaAs,T)=1.5192+5.16X10~5XT-l.99X10~6~T2+2.60~10~gXT3 (ELineV). The nearly linear variation of EF(GaAs,T) versus the temperature in the range 170 K<T<340 K can be approximated by a coefficient (dEF/dT) =-4.4X 10m4 eV/K, in excellent agreement with theoretical predictions.

Verfahren zur Messung von einer oder mehreren Eigenschaften einer Probe (10), bei welchem (a) zum... more Verfahren zur Messung von einer oder mehreren Eigenschaften einer Probe (10), bei welchem (a) zumindest einer Parameter der Probe (10) zeitlich definiert verandert wird, (b) ein oder mehrere modulierbare Messignale (20,20A,20B) erzeugt werden, welche zumindest jeweils eine von zumindest einem der zeitlich veranderten Parameter der Probe (10) abhangige, zu ermittelnde Mesgrose enthalten, (c) das bzw. die Messignale (20,20A,20B) zur Erzeugung von Detektorsignalen (30) detektiert werden, (d) die Mesgrose bzw. die Mesgrosen aus den erzeugten Detektorsignalen (30) ermittelt werden, (e) das bzw. die Messignale (20,20A,20B) nach Verlassen der Probe (10) und vor dem Detektieren einer von der zeitlichen definierten Veranderung des bzw. der Parameter der Probe (10) abhangigen Modulation mit bestimmten Modulationsparametern unterworfen werden, (f) das bzw. die modulierten Messignale (20,20A,20B) zeitlich integriert werden, und (g) Aussagen uber die Mesgrosen anhand der Detektorsignale (30) und...

To determine the dependence of a first measured quantity (Y) on a second measured quantity (P) th... more To determine the dependence of a first measured quantity (Y) on a second measured quantity (P) the second measured quantity (P) is periodically modified with a frequency (f0). The first measured quantity (Y), which changes accordingly, is measured. From the first measurement signal of the first measured quantity (Y) the components of the first measured quantity (Y) are determined with at least a plurality of frequencies. From the components determined in this way the first measured quantity (Y) is reconstructed by signal processing for at least a plurality of values of the second measured quantity (P).

A method for measuring one or more properties of a sample (10), wherein (A) is changed over time ... more A method for measuring one or more properties of a sample (10), wherein (A) is changed over time defining at least one parameter of the sample (10), (B) containing one or more modulated measuring signals (20,20A, 20B) are generated, which is at least dependent in each case one of at least one of the temporally altered parameter of the sample (10) to be detected measurable variable, (C) or the measurement signals (20,20A, 20B) for generating detector signals (30) are detected, (D) the measured variable or measured variables are determined from the generated detector signals (30) (E) or the measurement signals (20,20A, 20B) are subjected after leaving the sample (10) and prior to detection of a defined by the time variation of the parameter or the sample (10) dependent modulation with specific modulation parameters, (F) or the modulated measuring signals (20,20A, 20B) are integrated over time, and (G) determined statements about the measured variables on the basis of the detection sig...