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Papers by Bernt Ketterer
Nano Letters, 2012
The development of low-temperature carbonization procedures promises to provide novel nanostructu... more The development of low-temperature carbonization procedures promises to provide novel nanostructured carbon materials that are of high current interest in materials science and technology. Here, we report a "wet-chemical" carbonization method that utilizes hexayne amphiphiles as metastable carbon precursors. Nearly perfect control of the nanoscopic morphology was achieved by self-assembly of the precursors into colloidal aggregates with tailored diameter in water. Subsequent carbonization furnished carbon nanocapsules with a carbon microstructure resembling graphite-like amorphous carbon materials.
Nano Letters, 2010
Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-ass... more Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurements. Along with theoretical considerations, the doping mechanisms have been revealed. Two competing mechanisms have been revealed: dopant incorporation from the side facets and from the gallium droplet. In the latter incorporation path, doping compensation seems to play an important role in the effective dopant concentration. Hole concentrations of at least 2.4 x 10(18) cm(-3) have been achieved, which to our knowledge is the largest p doping range obtained up to date. This work opens the avenue for the use of doped GaAs nanowires in advanced applications and in mesoscopic physics experiments.
Applied Physics Letters, 2010
P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The in... more P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The incorporation is monitored by Raman spectroscopy of the local vibrational modes. For Si-concentrations up to 1.4×1018 cm-3, silicon incorporates mainly in arsenic sites. For higher concentrations, we observe the formation of silicon pairs. This is related to the Coulomb interaction between charged defects during growth. An electrical deactivation
ACS Nano, 2011
In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engine... more In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engineering of the electronic structure within a single material. This presupposes an exact knowledge of the band structure in the wurtzite phase. We demonstrate that resonant Raman scattering is a important tool to probe the electronic structure of novel materials. Exemplarily, we use this technique to elucidate the band structure of wurtzite GaAs at the Γ point. Within the experimental uncertainty we find that the free excitons at the edge of the wurtzite and the zinc-blende band gap exhibit equal energies. For the first time we show that the conduction band minimum in wurtzite GaAs is of Γ(7) symmetry, meaning a small effective mass. We further find evidence for a light-hole-heavy-hole splitting of 103 meV at 10 K.
Nanotechnology, Jan 13, 2011
Growth of GaAs and In(x)Ga(1-x)As nanowires by the group-III assisted molecular beam epitaxy grow... more Growth of GaAs and In(x)Ga(1-x)As nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO(2) substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550 °C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium achieved by lowering the growth temperature does not have the effect of increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575 °C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit spectrally narrow luminescence.
Nano Letters, 2012
The development of low-temperature carbonization procedures promises to provide novel nanostructu... more The development of low-temperature carbonization procedures promises to provide novel nanostructured carbon materials that are of high current interest in materials science and technology. Here, we report a "wet-chemical" carbonization method that utilizes hexayne amphiphiles as metastable carbon precursors. Nearly perfect control of the nanoscopic morphology was achieved by self-assembly of the precursors into colloidal aggregates with tailored diameter in water. Subsequent carbonization furnished carbon nanocapsules with a carbon microstructure resembling graphite-like amorphous carbon materials.
Nano Letters, 2010
Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-ass... more Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurements. Along with theoretical considerations, the doping mechanisms have been revealed. Two competing mechanisms have been revealed: dopant incorporation from the side facets and from the gallium droplet. In the latter incorporation path, doping compensation seems to play an important role in the effective dopant concentration. Hole concentrations of at least 2.4 x 10(18) cm(-3) have been achieved, which to our knowledge is the largest p doping range obtained up to date. This work opens the avenue for the use of doped GaAs nanowires in advanced applications and in mesoscopic physics experiments.
Applied Physics Letters, 2010
P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The in... more P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The incorporation is monitored by Raman spectroscopy of the local vibrational modes. For Si-concentrations up to 1.4×1018 cm-3, silicon incorporates mainly in arsenic sites. For higher concentrations, we observe the formation of silicon pairs. This is related to the Coulomb interaction between charged defects during growth. An electrical deactivation
ACS Nano, 2011
In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engine... more In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engineering of the electronic structure within a single material. This presupposes an exact knowledge of the band structure in the wurtzite phase. We demonstrate that resonant Raman scattering is a important tool to probe the electronic structure of novel materials. Exemplarily, we use this technique to elucidate the band structure of wurtzite GaAs at the Γ point. Within the experimental uncertainty we find that the free excitons at the edge of the wurtzite and the zinc-blende band gap exhibit equal energies. For the first time we show that the conduction band minimum in wurtzite GaAs is of Γ(7) symmetry, meaning a small effective mass. We further find evidence for a light-hole-heavy-hole splitting of 103 meV at 10 K.
Nanotechnology, Jan 13, 2011
Growth of GaAs and In(x)Ga(1-x)As nanowires by the group-III assisted molecular beam epitaxy grow... more Growth of GaAs and In(x)Ga(1-x)As nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO(2) substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550 °C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium achieved by lowering the growth temperature does not have the effect of increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575 °C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit spectrally narrow luminescence.