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Bharath Cimbili

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Papers by Bharath Cimbili

Research paper thumbnail of 32.5 E-band (71-to-86GHz) GaN Power Amplifier with 4.37W Output Power and 18.5% PAE for 5G Backhaul

Research paper thumbnail of Investigating Feeding Techniques for High-power and High-efficiency E-band Power Amplifiers

Research paper thumbnail of E-band Downlink GaN PA with a Homogeneous Output Power of 2.7W and a Peak PAE of 32.3%

Research paper thumbnail of A 63-73 GHz GaN Power Amplifier with a Compact Power Combiner

Research paper thumbnail of A 2.5W/mm High-Power Density V-Band Power Amplifier Using 150 nm GaN Technology Beyond f<sub>T</sub>

Research paper thumbnail of 2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%

IEEE Microwave and Wireless Technology Letters

In this letter, we report two high-power gallium nitride (GaN) power amplifiers (PAs) in the Satc... more In this letter, we report two high-power gallium nitride (GaN) power amplifiers (PAs) in the Satcom E-band (71-86 GHz) with an output power of 2.6 and 4 W, designed by incorporating an ultralow-loss ON-chip integrated power combiner. The first one is a three-stage four-way combining (unit) PA, and the second one is an eight-way combining balanced PA. The unit PA produces a saturated output power (P SAT) of 34.2 dBm (2.6 W), a peak power-added-efficiency (PAE) of 22%, and an associated power gain of 16.2 dB at 74 GHz. This performance was partly made possible by the design and optimization of the low-loss integrated power combiner, which minimized the losses in the matching networks. In addition, the balanced PA produces a P SAT of 36 dBm (4 W), P 1 dB of 35.6 dBm (3.63 W), with an associated PAE of 15.3% at 80 GHz. To the best of the authors' knowledge, this is the highest output power (4 W) and the highest PAE (22%) for a PA > 2.5 W reported in any of the III-V technologies at E-band. Index Terms-E-band, gallium nitride (GaN), high efficiency, high frequency, high output power, low-loss, mm-wave, monolithic microwave integrated circuit (MMIC), ON-chip, power amplifier (PA), power combining, W-band.

Research paper thumbnail of High-Efficiency Watt-Level E-band GaN Power Amplifier with a Compact Low-loss Combiner

2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications

Research paper thumbnail of 32.5 E-band (71-to-86GHz) GaN Power Amplifier with 4.37W Output Power and 18.5% PAE for 5G Backhaul

Research paper thumbnail of Investigating Feeding Techniques for High-power and High-efficiency E-band Power Amplifiers

Research paper thumbnail of E-band Downlink GaN PA with a Homogeneous Output Power of 2.7W and a Peak PAE of 32.3%

Research paper thumbnail of A 63-73 GHz GaN Power Amplifier with a Compact Power Combiner

Research paper thumbnail of A 2.5W/mm High-Power Density V-Band Power Amplifier Using 150 nm GaN Technology Beyond f<sub>T</sub>

Research paper thumbnail of 2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%

IEEE Microwave and Wireless Technology Letters

In this letter, we report two high-power gallium nitride (GaN) power amplifiers (PAs) in the Satc... more In this letter, we report two high-power gallium nitride (GaN) power amplifiers (PAs) in the Satcom E-band (71-86 GHz) with an output power of 2.6 and 4 W, designed by incorporating an ultralow-loss ON-chip integrated power combiner. The first one is a three-stage four-way combining (unit) PA, and the second one is an eight-way combining balanced PA. The unit PA produces a saturated output power (P SAT) of 34.2 dBm (2.6 W), a peak power-added-efficiency (PAE) of 22%, and an associated power gain of 16.2 dB at 74 GHz. This performance was partly made possible by the design and optimization of the low-loss integrated power combiner, which minimized the losses in the matching networks. In addition, the balanced PA produces a P SAT of 36 dBm (4 W), P 1 dB of 35.6 dBm (3.63 W), with an associated PAE of 15.3% at 80 GHz. To the best of the authors' knowledge, this is the highest output power (4 W) and the highest PAE (22%) for a PA > 2.5 W reported in any of the III-V technologies at E-band. Index Terms-E-band, gallium nitride (GaN), high efficiency, high frequency, high output power, low-loss, mm-wave, monolithic microwave integrated circuit (MMIC), ON-chip, power amplifier (PA), power combining, W-band.

Research paper thumbnail of High-Efficiency Watt-Level E-band GaN Power Amplifier with a Compact Low-loss Combiner

2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications

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