C. Lanzieri - Academia.edu (original) (raw)

Papers by C. Lanzieri

In this work we will demonstrate that Self Aligned Proton Implantation (SAPI) devices give excell... more In this work we will demonstrate that Self Aligned Proton Implantation (SAPI) devices give excellent transconductance linearity (i.e. virtually constant at approximately 150 mS/mm for drain current in the range ldss to 15% Idss) and increased output resistance. Said devices, with a 0.5x300 um gate geometry, typically yield 1.6 dB noise figure and 9.0 dB associated gain at 12 GHz.

We show in this work that Alo.25Gao.75/GaAs power HFETs can offer substantial performance improve... more We show in this work that Alo.25Gao.75/GaAs power HFETs can offer substantial performance improvement at J-Band over conventional GaAs power MESFET's with the same geometry. Further performance enhancement is offered by a non-lithographic gate etching technique able to downscale the gate length to 0.3 urn. The paper will discuss the advantages and possible limitations of this gate scaling process; in addition, evidence will be given of the good hot-electron reliability of these devices.

2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)

ABSTRACT This works shows high-field degradation data measured on AlGaAs/GaAs HFETs under differe... more ABSTRACT This works shows high-field degradation data measured on AlGaAs/GaAs HFETs under different stress bias conditions. The aim is at extracting indications on the relevant factors accelerating the gradual degradation of the HFETs under hot-electron and impact ionization conditions. Popular acceleration laws used for MOSFETs are applied, and numerical simulations are used as an aid for the physical interpretation of the results

2008 IEEE Radio Frequency Integrated Circuits Symposium, 2008

In this article the design, fabrication and test of X-band and 2-18 GHz wideband high power SPDT ... more In this article the design, fabrication and test of X-band and 2-18 GHz wideband high power SPDT MMIC switches in GaN technology are presented. Said switches have demonstrated state-of-the-art performance and RF fabrication yields better than 65%. In particular the X-band switch exhibits an on-state power handling capability of better than 37 dBm at the 1 dB insertion loss compression

2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014

ABSTRACT In this paper a characterization technique for the evaluation of transistor performance ... more ABSTRACT In this paper a characterization technique for the evaluation of transistor performance and restrictions is presented, based on a simple and low-cost measurement system. Experimental examples, carried out on a 0.5 × 1000 μm2GaN HEMT, are reported. The validity of the proposed approach is demonstrated by comparing the results with the ones obtained by means of commonly adopted measurement setups.

We report on the pulsed and RF power measurements of passivated GaN HEMTs obtained by two differe... more We report on the pulsed and RF power measurements of passivated GaN HEMTs obtained by two different gate evaporation process. Due to the SiN lateral over-etch prior to the gate metalization step, devices with a selfaligned gate evaporation showed larger dispersion with respect to those where an angled evaporation was performed. The poorer performances of the self-aligned devices have to be related to the surface regions that are not covered by the gate metal, and that have been exposed to the SiN CF4/O2 dry etch process

Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006, 2007

Abstract One of the main expected benefits of AlGaN HEMT technology for microwave applications is... more Abstract One of the main expected benefits of AlGaN HEMT technology for microwave applications is related to the higher operating bias voltage achievable with these devices. However, various technological issues, concerning material properties and device technology must be properly tailored to fully exploit the potential of that kind of devices. In this work we report on the realization of HEMT device showing improved performance in terms of breakdown voltage, device isolation and reverse current leakage achieved by ...

A method for determining the noise parameters of high frequency field-effect transistors is prese... more A method for determining the noise parameters of high frequency field-effect transistors is presented. It has been developed by expressing the chain correlation matrix of the device as a function of its H-parameters and two frequency- dependent equivalent noise temperatures. The noise temperatures are determined utilizing the H-parameters and the 50 Omega noise figure of the device measured at a

2006 International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits, INMMIC 2006 - Proceedings, 2007

Abstract In this paper the design of a two-stage class F high power amplifier made up by ten acti... more Abstract In this paper the design of a two-stage class F high power amplifier made up by ten active devices is presented. The design is based on a new approach for combining the devices and designing the matching networks. The amplifier has been designed for ...

2008 European Microwave Integrated Circuit Conference, 2008

Page 1. 2-6 GHz GaN MMIC Power Amplifiers for Electronic Warfare Applications M. AngelesGonzalez-... more Page 1. 2-6 GHz GaN MMIC Power Amplifiers for Electronic Warfare Applications M. AngelesGonzalez-Garrido 1*, Jesus Grajal 1*, Pablo Cubilla 2, Antonio Cetronio 3, Claudio Lanzieri 3, Mike Uren 4 1 ETSIT, Universidad Politecnica de Madrid. ...

Nuclear Physics B - Proceedings Supplements, 1995

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005

Microelectronics Reliability, 2011

... M. Riccio a , Corresponding Author Contact Information , E-mail The Corresponding Author , A.... more ... M. Riccio a , Corresponding Author Contact Information , E-mail The Corresponding Author , A. Pantellini b , A. Irace a , G. Breglio a , A. Nanni b and C. Lanzieri b. ... Electrical characteristics. The static measurement performed by Dynamic I–V Analyzer (DIVA), represented in Fig. ...

IEEE Transactions on Nuclear Science, 1996

The slow component of the output pulse of Semi-Insulating (SI) Gallium Arsenide (GaAs) particle d... more The slow component of the output pulse of Semi-Insulating (SI) Gallium Arsenide (GaAs) particle detectors, which affects charge collection efficiency (cce), has been generally attributed to trapping/detrapping effects. However, most of the detectors analyzed in the literature can only be operated below the voltage Vd necessary to extend the electric field all the way to the ohmic contact, making difficult

$Research paper thumbnail of X-$\gamma$ Ray Spectroscopy With Semi-Insulating 4H-Silicon Carbide$

IEEE Transactions on Nuclear Science, 2013

Radiation detectors on a semi-insulating (SI) 4H silicon carbide (SiC) wafer have been manufactur... more Radiation detectors on a semi-insulating (SI) 4H silicon carbide (SiC) wafer have been manufactured and characterized with X and γ photons in the range 8-59 keV. The detectors were 400-μm-diameter circular Ni-SiC junctions on an SI 4H-SiC wafer thinned to 70 μm. Dark current densities of 3.5 nA/cm2 at +20°C and 0.3 μA / cm2 at +104°C with an internal electric field of 7 kV/cm have been measured. X- γ ray spectra from 241Am have been acquired at room temperature with pulser line width of 756 eV FWHM. The charge collection efficiency (CCE) has been measured under different experimental conditions with a maximum CCE = 75% at room temperature. Polarization effects have been observed, and the dependence of CCE on time and temperature has been measured and analyzed. The charge trapping has been described by the Hecht model with a maximum total mean drift length of 107 μm at room temperature.

The European Physical Journal B, 2000

ABSTRACT : GaAs Schottky diodes, made on semi-insulating liquid encapsulated Czochralski grown ma... more ABSTRACT : GaAs Schottky diodes, made on semi-insulating liquid encapsulated Czochralski grown material with concentrations of acceptor dopants varying from 1014 to 1017 cm-3, were investigated as alpha particle detectors. The charge collection efficiency (CCE) was found to decrease dramatically with increasing . Optical spectra in transmittance and reflectance were accurately measured to determine the concentrations of both neutral and ionised EL2 defects as a function of . The concentration of ionised EL2+ centres was shown to increase with , and to be quasi inversely proportional to the CCE values. This behaviour strongly supports the hypothesis that the EL2 defects play the main role in the compensation of the material and in limitation of the detection properties.

2012 19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012, 2012

ABSTRACT This contribution describes the design of an ultra wide band hybrid power amplifier for ... more ABSTRACT This contribution describes the design of an ultra wide band hybrid power amplifier for applications in the frequency range from 1 GHz to 6 GHz. The amplifier is designed with a GaN-on-Si HEMT device provided by SELEX-SI, in a single ended configuration and using the source/load-pull and Scattering parameters measured data. The amplifier has been designed using a CAD oriented broad band matching approach for both input and output networks. From 1 GHz to 6 GHz, the expected output power at 3dB of gain compression is around 41 dBm.

Nuclear Physics B - Proceedings Supplements, 1999