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Catherine Dubourdieu

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Papers by Catherine Dubourdieu

Research paper thumbnail of Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2

Nature communications, Jan 29, 2024

Research paper thumbnail of Strain and Cation Stoichiometry in Epitaxial BaTiO3 Thin Films Grown on Silicon

Research paper thumbnail of Epitaxial pyroelectric thin films on silicon for thermal energy harvesting

Research paper thumbnail of Growth parameters and tetragonality at the nanoscale of MBE epitaxial BaTiO3 films on Si

Research paper thumbnail of Thermal energy harvesting through epitaxial pyroelectric oxide films integrated on silicon

Research paper thumbnail of Integration of functional oxides on silicon for nanoelectronics and energy

Research paper thumbnail of Electro-optic modulation with functional oxides monolithically integrated on silicon

june 29-july 4 2014International audienceno abstrac

Research paper thumbnail of Epitaxial pyroelectric Pb(Zr,Ti)O3 thin films on silicon for thermal energy harvesting

11-15 mai 2015International audienceno abstrac

Research paper thumbnail of Pulsed-MOCVD Growth of Transition Metal Oxides

ECS Meeting Abstracts, 2005

not Available.

Research paper thumbnail of Toward van der Waals epitaxy of transferable ferroelectric barium titanate films via a graphene monolayer

Journal of Materials Chemistry C, 2020

Transferable highly (001)-oriented textured ferroelectric BaTiO3 thin films have been achieved on... more Transferable highly (001)-oriented textured ferroelectric BaTiO3 thin films have been achieved on a graphene monolayer for wearable devices like sensors and actuators for future “Internet of Things” era.

Research paper thumbnail of Correlation between the microwave surface resistance and the volumic fraction of a-axis grains in YBa2Cu3O7−x films

Physica C: Superconductivity, 1998

A quantitative study of the effect of a-axis grains (the a-axis is perpendicular to the substrate... more A quantitative study of the effect of a-axis grains (the a-axis is perpendicular to the substrate plane) on the microwave surface resistance in epitaxial YBa2Cu3O7−x films is reported. The films were grown by Metal Organic Chemical Vapor Deposition on MgO and LaAlO3 substrates. The fraction of a-axis grains %a has been varied in the range 0–70% by changing the oxygen partial pressure during the growth. A clear correlation between the surface resistance Rs(0.85Tc), measured at 87 GHz, and the volumic fraction %a is found. At variance, the residual surface resistance Rs(4.2 K) does not correlate to %a.

Research paper thumbnail of Mixed electrochemical–ferroelectric states in nanoscale ferroelectrics

Nature Physics, 2017

Ferroelectricity on the nanoscale has been the subject of much fascination in condensed-matter ph... more Ferroelectricity on the nanoscale has been the subject of much fascination in condensed-matter physics for over half a century. In recent years, multiple reports claiming ferroelectricity in ultrathin ferroelectric films based on the formation of remnant polarization states, local electromechanical hysteresis loops, and pressure-induced switching were made. However, similar phenomena were reported for traditionally non-ferroelectric materials, creating a significant level of uncertainty in the field. Here we show that in nanoscale systems the ferroelectric state is fundamentally inseparable from the electrochemical state of the surface, leading to the emergence of a mixed electrochemical-ferroelectric state. We explore the nature, thermodynamics, and thickness evolution of such states, and demonstrate the experimental pathway to establish its presence. This analysis reconciles multiple prior studies, provides guidelines for studies of ferroelectric materials on the nanoscale, and establishes the design paradigm for new generations of ferroelectric-based devices.

Research paper thumbnail of Method for Developing Thin Film from Oxide or Silicate of Hafnium Nitride, Coordination Compound Used in Said Method, and Method for Producing Integrated Electronic Circuit

Research paper thumbnail of Phase Change Material Cell with Piezoelectric or Ferroelectric Stress Inducer Liner

Research paper thumbnail of A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States

Nano letters, Jan 9, 2016

Memristive devices, whose conductance depends on previous programming history, are of significant... more Memristive devices, whose conductance depends on previous programming history, are of significant interest for building nonvolatile memory and brain-inspired computing systems. Here, we report half-integer quantized conductance transitions G = (n/2) (2e(2)/h) for n = 1, 2, 3, etc., in Cu/SiO2/W memristive devices observed below 300 mV at room temperature. This is attributed to the nanoscale filamentary nature of Cu conductance pathways formed inside SiO2. Retention measurements also show spontaneous filament decay with quantized conductance levels. Numerical simulations shed light into the dynamics underlying the data retention loss mechanisms and provide new insights into the nanoscale physics of memristive devices and trade-offs involved in engineering them for computational applications.

Research paper thumbnail of Controlling ferroelectricity in dielectric films by process induced uniaxial strain

Research paper thumbnail of Engineering multiple threshold voltages in an integrated circuit

Research paper thumbnail of Phase change material cell with stress inducer liner

Research paper thumbnail of Application of pulsed liquid-injection MOCVD to the growth of ultrathin epitaxial oxides for magnetic heterostructures

Thin Solid Films, 2001

We illustrate the capabilities of pulsed-liquid injection metal-organic chemical vapor deposition... more We illustrate the capabilities of pulsed-liquid injection metal-organic chemical vapor deposition in the nano-engineering of complex oxides with results obtained on (La Sr MnO ySrTiO) (LSMOySTO) superlattices. Superlattices with ultrathin 0.7 0.3 3 3 15 films of a few monolayers have been successfully prepared, as shown by synchrotron radiation diffraction experiments. Laue oscillations were observed between the satellite peaks, indicating a smooth upper surface. Sets of superlattices with varying LSMO or STO thickness were synthesized on different substrates (LaAlO , SrTiO , MgO). By varying the relative thickness of 3 3 each compound and changing the substrate, the strain in the stackings could be changed.

Research paper thumbnail of In situ characterization of iron oxide quantum dots and thin film growth using AFM

Research paper thumbnail of Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2

Nature communications, Jan 29, 2024

Research paper thumbnail of Strain and Cation Stoichiometry in Epitaxial BaTiO3 Thin Films Grown on Silicon

Research paper thumbnail of Epitaxial pyroelectric thin films on silicon for thermal energy harvesting

Research paper thumbnail of Growth parameters and tetragonality at the nanoscale of MBE epitaxial BaTiO3 films on Si

Research paper thumbnail of Thermal energy harvesting through epitaxial pyroelectric oxide films integrated on silicon

Research paper thumbnail of Integration of functional oxides on silicon for nanoelectronics and energy

Research paper thumbnail of Electro-optic modulation with functional oxides monolithically integrated on silicon

june 29-july 4 2014International audienceno abstrac

Research paper thumbnail of Epitaxial pyroelectric Pb(Zr,Ti)O3 thin films on silicon for thermal energy harvesting

11-15 mai 2015International audienceno abstrac

Research paper thumbnail of Pulsed-MOCVD Growth of Transition Metal Oxides

ECS Meeting Abstracts, 2005

not Available.

Research paper thumbnail of Toward van der Waals epitaxy of transferable ferroelectric barium titanate films via a graphene monolayer

Journal of Materials Chemistry C, 2020

Transferable highly (001)-oriented textured ferroelectric BaTiO3 thin films have been achieved on... more Transferable highly (001)-oriented textured ferroelectric BaTiO3 thin films have been achieved on a graphene monolayer for wearable devices like sensors and actuators for future “Internet of Things” era.

Research paper thumbnail of Correlation between the microwave surface resistance and the volumic fraction of a-axis grains in YBa2Cu3O7−x films

Physica C: Superconductivity, 1998

A quantitative study of the effect of a-axis grains (the a-axis is perpendicular to the substrate... more A quantitative study of the effect of a-axis grains (the a-axis is perpendicular to the substrate plane) on the microwave surface resistance in epitaxial YBa2Cu3O7−x films is reported. The films were grown by Metal Organic Chemical Vapor Deposition on MgO and LaAlO3 substrates. The fraction of a-axis grains %a has been varied in the range 0–70% by changing the oxygen partial pressure during the growth. A clear correlation between the surface resistance Rs(0.85Tc), measured at 87 GHz, and the volumic fraction %a is found. At variance, the residual surface resistance Rs(4.2 K) does not correlate to %a.

Research paper thumbnail of Mixed electrochemical–ferroelectric states in nanoscale ferroelectrics

Nature Physics, 2017

Ferroelectricity on the nanoscale has been the subject of much fascination in condensed-matter ph... more Ferroelectricity on the nanoscale has been the subject of much fascination in condensed-matter physics for over half a century. In recent years, multiple reports claiming ferroelectricity in ultrathin ferroelectric films based on the formation of remnant polarization states, local electromechanical hysteresis loops, and pressure-induced switching were made. However, similar phenomena were reported for traditionally non-ferroelectric materials, creating a significant level of uncertainty in the field. Here we show that in nanoscale systems the ferroelectric state is fundamentally inseparable from the electrochemical state of the surface, leading to the emergence of a mixed electrochemical-ferroelectric state. We explore the nature, thermodynamics, and thickness evolution of such states, and demonstrate the experimental pathway to establish its presence. This analysis reconciles multiple prior studies, provides guidelines for studies of ferroelectric materials on the nanoscale, and establishes the design paradigm for new generations of ferroelectric-based devices.

Research paper thumbnail of Method for Developing Thin Film from Oxide or Silicate of Hafnium Nitride, Coordination Compound Used in Said Method, and Method for Producing Integrated Electronic Circuit

Research paper thumbnail of Phase Change Material Cell with Piezoelectric or Ferroelectric Stress Inducer Liner

Research paper thumbnail of A 250 mV Cu/SiO2/W Memristor with Half-Integer Quantum Conductance States

Nano letters, Jan 9, 2016

Memristive devices, whose conductance depends on previous programming history, are of significant... more Memristive devices, whose conductance depends on previous programming history, are of significant interest for building nonvolatile memory and brain-inspired computing systems. Here, we report half-integer quantized conductance transitions G = (n/2) (2e(2)/h) for n = 1, 2, 3, etc., in Cu/SiO2/W memristive devices observed below 300 mV at room temperature. This is attributed to the nanoscale filamentary nature of Cu conductance pathways formed inside SiO2. Retention measurements also show spontaneous filament decay with quantized conductance levels. Numerical simulations shed light into the dynamics underlying the data retention loss mechanisms and provide new insights into the nanoscale physics of memristive devices and trade-offs involved in engineering them for computational applications.

Research paper thumbnail of Controlling ferroelectricity in dielectric films by process induced uniaxial strain

Research paper thumbnail of Engineering multiple threshold voltages in an integrated circuit

Research paper thumbnail of Phase change material cell with stress inducer liner

Research paper thumbnail of Application of pulsed liquid-injection MOCVD to the growth of ultrathin epitaxial oxides for magnetic heterostructures

Thin Solid Films, 2001

We illustrate the capabilities of pulsed-liquid injection metal-organic chemical vapor deposition... more We illustrate the capabilities of pulsed-liquid injection metal-organic chemical vapor deposition in the nano-engineering of complex oxides with results obtained on (La Sr MnO ySrTiO) (LSMOySTO) superlattices. Superlattices with ultrathin 0.7 0.3 3 3 15 films of a few monolayers have been successfully prepared, as shown by synchrotron radiation diffraction experiments. Laue oscillations were observed between the satellite peaks, indicating a smooth upper surface. Sets of superlattices with varying LSMO or STO thickness were synthesized on different substrates (LaAlO , SrTiO , MgO). By varying the relative thickness of 3 3 each compound and changing the substrate, the strain in the stackings could be changed.

Research paper thumbnail of In situ characterization of iron oxide quantum dots and thin film growth using AFM

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