Charles Szmanda - Academia.edu (original) (raw)
Papers by Charles Szmanda
Building on the success of organic electronic devices, such as light-emitting diodes and fi eld-e... more Building on the success of organic electronic devices, such as light-emitting diodes and fi eld-effect transistors, procedures for fabricating non-volatile organic memory devices are now being explored. Here, we demonstrate a novel organic memory device fabricated by solution processing. Programmable electrical bistability was observed in a device made from a polystyrene fi lm containing gold nanoparticles and 8-hydroxyquinoline sandwiched between two metal electrodes. The as-prepared device, which is in a low-conductivity state, displays an abrupt transition to a high-conductivity state under an external bias of 2.8 V. These two states differ in conductivity by about four orders of magnitude. Applying a negative bias of 1.8 V causes the device to return to the low-conductivity state. The electronic
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
ABSTRACT The threshold cross‐link density model describes the effect of cross‐link density (Θ) on... more ABSTRACT The threshold cross‐link density model describes the effect of cross‐link density (Θ) on image formation and the relationship of the cross‐link density to acid concentration in the resist. This method was used to determine experimentally the reaction order of acid in the cross‐linking reaction of negative acid catalyzed resists. The order of the cross‐linking reaction in acid effectively modulates the aerial image of the resist by transforming the initial acid concentration defined by the aerial image by a power equal to the reaction order of the acid. The reaction order of the acid catalyzed cross‐linking reaction is also determined via the measurement of bulk resist properties. Determining the reaction order by bulk methods generates a quantity that is independent of the effects of acid diffusion in the resist and is similar to that obtained by the threshold cross‐link density model. Also described is the effect acid diffusion will have on mitigating the enhancement of the image obtained with large reaction orders. Finally, the effect of developer selectivity is addressed and a method to determine developer selectivity is presented. The effect on the modulation of the initial energy distribution which is defined by the aerial image from diffusion, reaction order, and developer selectivity is described.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
For KrF based lithographic systems, resist design philosophy focuses on methods to maximize resis... more For KrF based lithographic systems, resist design philosophy focuses on methods to maximize resist performance while providing both a reliable and cost effective lithographic process. Such systems will, out of necessity, be high sensitivity and high contrast. A key evaluation criterion for resists is the lithographic process window, as defined by the focus and exposure latitudes of the resist. As the process window is dependent on the type of feature being printed, the overlap of resist process windows between isolated and dense lines is often employed to define the overall resist process window. Two general methods can be employed to manipulate the lithographic performance. One way is to manipulate the image through the numerical aperture of the lens, coherence of the source and bias of the mask. The second is to manipulate the latent image by changing the relative response of the resist to changes in the energy dose. Both methods will directly influence the lithographic performance of the resist and wil...
PURPOSE: Dichalcogenide selenium ink is provided to facilitate intimate mixing of the CIGS compon... more PURPOSE: Dichalcogenide selenium ink is provided to facilitate intimate mixing of the CIGS components and clog free spraying of the selenium ink, and to facilitate extended shelf-life of the selenium ink. CONSTITUTION: Dichalcogenide selenium ink comprises: a chemical compound having a formula RZ-Sex-Z'R; and a liquid carrier, wherein the selenium ink comprises >= 1 wt% selenium; wherein the selenium ink is a stable dispersion and wherein the selenium ink is hydrazine and hydrazinium free. In formula, Z and Z' are each independently selected from sulfur, selenium and tellurium; x is 2 to 20; R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; R' is selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group.
Building on the success of organic electronic devices, such as light-emitting diodes and fi eld-e... more Building on the success of organic electronic devices, such as light-emitting diodes and fi eld-effect transistors, procedures for fabricating non-volatile organic memory devices are now being explored. Here, we demonstrate a novel organic memory device fabricated by solution processing. Programmable electrical bistability was observed in a device made from a polystyrene fi lm containing gold nanoparticles and 8-hydroxyquinoline sandwiched between two metal electrodes. The as-prepared device, which is in a low-conductivity state, displays an abrupt transition to a high-conductivity state under an external bias of 2.8 V. These two states differ in conductivity by about four orders of magnitude. Applying a negative bias of 1.8 V causes the device to return to the low-conductivity state. The electronic
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
ABSTRACT The threshold cross‐link density model describes the effect of cross‐link density (Θ) on... more ABSTRACT The threshold cross‐link density model describes the effect of cross‐link density (Θ) on image formation and the relationship of the cross‐link density to acid concentration in the resist. This method was used to determine experimentally the reaction order of acid in the cross‐linking reaction of negative acid catalyzed resists. The order of the cross‐linking reaction in acid effectively modulates the aerial image of the resist by transforming the initial acid concentration defined by the aerial image by a power equal to the reaction order of the acid. The reaction order of the acid catalyzed cross‐linking reaction is also determined via the measurement of bulk resist properties. Determining the reaction order by bulk methods generates a quantity that is independent of the effects of acid diffusion in the resist and is similar to that obtained by the threshold cross‐link density model. Also described is the effect acid diffusion will have on mitigating the enhancement of the image obtained with large reaction orders. Finally, the effect of developer selectivity is addressed and a method to determine developer selectivity is presented. The effect on the modulation of the initial energy distribution which is defined by the aerial image from diffusion, reaction order, and developer selectivity is described.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
For KrF based lithographic systems, resist design philosophy focuses on methods to maximize resis... more For KrF based lithographic systems, resist design philosophy focuses on methods to maximize resist performance while providing both a reliable and cost effective lithographic process. Such systems will, out of necessity, be high sensitivity and high contrast. A key evaluation criterion for resists is the lithographic process window, as defined by the focus and exposure latitudes of the resist. As the process window is dependent on the type of feature being printed, the overlap of resist process windows between isolated and dense lines is often employed to define the overall resist process window. Two general methods can be employed to manipulate the lithographic performance. One way is to manipulate the image through the numerical aperture of the lens, coherence of the source and bias of the mask. The second is to manipulate the latent image by changing the relative response of the resist to changes in the energy dose. Both methods will directly influence the lithographic performance of the resist and wil...
PURPOSE: Dichalcogenide selenium ink is provided to facilitate intimate mixing of the CIGS compon... more PURPOSE: Dichalcogenide selenium ink is provided to facilitate intimate mixing of the CIGS components and clog free spraying of the selenium ink, and to facilitate extended shelf-life of the selenium ink. CONSTITUTION: Dichalcogenide selenium ink comprises: a chemical compound having a formula RZ-Sex-Z'R; and a liquid carrier, wherein the selenium ink comprises >= 1 wt% selenium; wherein the selenium ink is a stable dispersion and wherein the selenium ink is hydrazine and hydrazinium free. In formula, Z and Z' are each independently selected from sulfur, selenium and tellurium; x is 2 to 20; R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; R' is selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group.