Chayma Abed - Academia.edu (original) (raw)

Papers by Chayma Abed

Materials, May 6, 2020

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputte... more In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al 2 O 3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 • C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10 −2 Ω cm −1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputte... more In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al 2 O 3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 • C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10 −2 Ω cm −1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

Materials, Mar 18, 2022

This article is an open access article distributed under the terms and conditions of the Creative... more This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY

Materials, 2022

Magnesium-doped zinc oxide “ZnO:Mg” nanocrystals (NCs) were fabricated using a sol gel method. Th... more Magnesium-doped zinc oxide “ZnO:Mg” nanocrystals (NCs) were fabricated using a sol gel method. The Mg concentration impact on the structural, morphological, electrical, and dielectric characteristics of ZnO:Mg NCs were inspected. X-ray diffraction (XRD) patterns display the hexagonal wurtzite structure without any additional phase. TEM images revealed the nanometric size of the particles with a spherical-like shape. The electrical conductivity of the ZnO NCs, thermally activated, was found to be dependent on the Mg content. The impedance spectra were represented via a corresponding circuit formed by a resistor and constant phase element (CPE). A non-Debye type relaxation was located through the analyses of the complex impedance. The conductivity diminished with the incorporation of the Mg element. The AC conductivity is reduced by raising the temperature. Its plot obeys the Arrhenius law demonstrating a single activation energy during the conduction process. The complex impedance hi...

Applied Surface Science, 2015

ABSTRACT

Materials

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputte... more In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved ...

Materials Research Bulletin

Materials, May 6, 2020

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputte... more In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al 2 O 3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 • C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10 −2 Ω cm −1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputte... more In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al 2 O 3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 • C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10 −2 Ω cm −1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

Materials, Mar 18, 2022

This article is an open access article distributed under the terms and conditions of the Creative... more This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY

Materials, 2022

Magnesium-doped zinc oxide “ZnO:Mg” nanocrystals (NCs) were fabricated using a sol gel method. Th... more Magnesium-doped zinc oxide “ZnO:Mg” nanocrystals (NCs) were fabricated using a sol gel method. The Mg concentration impact on the structural, morphological, electrical, and dielectric characteristics of ZnO:Mg NCs were inspected. X-ray diffraction (XRD) patterns display the hexagonal wurtzite structure without any additional phase. TEM images revealed the nanometric size of the particles with a spherical-like shape. The electrical conductivity of the ZnO NCs, thermally activated, was found to be dependent on the Mg content. The impedance spectra were represented via a corresponding circuit formed by a resistor and constant phase element (CPE). A non-Debye type relaxation was located through the analyses of the complex impedance. The conductivity diminished with the incorporation of the Mg element. The AC conductivity is reduced by raising the temperature. Its plot obeys the Arrhenius law demonstrating a single activation energy during the conduction process. The complex impedance hi...

Applied Surface Science, 2015

ABSTRACT

Materials

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputte... more In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved ...

Materials Research Bulletin