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Papers by Daniil Livshits
Conference on Lasers and Electro-Optics, 2016
2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016
A multi-channel ring-based transmitter is excited by a comb laser with 50GHz channel spacing and ... more A multi-channel ring-based transmitter is excited by a comb laser with 50GHz channel spacing and two channels are concurrently modulated at 10Gb/s. Bit error ratio tests show ∼3dB optical power penalty for 50GHz relative to larger channel spacing.
We present a procedure for modeling the energy efficiency of frequency comb sources based on empi... more We present a procedure for modeling the energy efficiency of frequency comb sources based on empirical device measurements. The proposed methodology allows for rapid exploration of the joint source-link design space to identify valid configurations that minimize the energy consumption of the link.
CLEO: 2015, 2015
A five-channel microring modulator-based DWDM silicon photonic transmitter driven by a quantum do... more A five-channel microring modulator-based DWDM silicon photonic transmitter driven by a quantum dot comb laser is demonstrated for the first time. 10Gbps eye diagrams are shown at both 25°C and 40°C.
IEEE Photonics Technology Letters
We present the measurements of the dispersion of InAs/GaAs quantum-dot lasers emitting at 1230 nm... more We present the measurements of the dispersion of InAs/GaAs quantum-dot lasers emitting at 1230 nm (ground state) and 1160 nm (excited state) from the analysis of their subthreshold emission spectra. Measurements from devices with various lengths allow us to deduce that the group velocity dispersion is as high as 2270 fs 2 mm −1 and is mainly due to the dispersion of bulk GaAs. The gain-induced dispersion varies with the injected current at a rate of −2 fs 2 mA −1 mm −1 , whereas the effect of a saturable absorber on the dispersion is found to be negligible. These results suggest that the implementation of integrated dispersion compensation could significantly reduce the pulse duration of these lasers in mode-locked regime and lead to an enhancement of the formation of optical frequency combs in these devices.
Optics letters, 2016
A compact, all-room-temperature, widely tunable, continuous wave laser source in the green spectr... more A compact, all-room-temperature, widely tunable, continuous wave laser source in the green spectral region (502.1-544.2 nm) with a maximum output power of 14.7 mW is demonstrated. This was made possible by utilizing second-harmonic generation (SHG) in a periodically poled potassium titanyl phosphate (PPKTP) crystal waveguide pumped by a quantum-well external-cavity fiber-coupled diode laser and exploiting the multimode-matching approach in nonlinear crystal waveguides. The dual-wavelength SHG in the wavelength region between 505.4 and 537.7 nm (with a wavelength difference ranging from 1.8 to 32.3 nm) and sum-frequency generation in a PPKTP waveguide is also demonstrated.
2016 International Conference Laser Optics (LO), 2016
Conference on Lasers and Electro-Optics, 2016
Broadband Access Communication Technologies X, 2016
2015 International Conference on Photonics in Switching (PS), 2015
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XIV, 2015
Workshop on Optical Components for Broadband Communication, 2006
ABSTRACT 980 nm vertical-cavity surface-emitting laser based on sub-monolayer growth of quantum d... more ABSTRACT 980 nm vertical-cavity surface-emitting laser based on sub-monolayer growth of quantum dots show at 25 and 85°C for 20 Gb/s without current adjustment clearly open eyes and error free operation with bit error rates better than 10-12. For these multimode lasers the small signal modulation bandwidth decreases only from 15 GHz at 25°C to 13 GHz at 85°C. Single mode devices demonstrate at 20°C a small signal modulation bandwidth of 16.6 GHz with 0.8 mW optical output power and a record high modulation current efficiency factor of 19 GHz/mA1/2.
Laser Diodes and Applications, 1995
Fabrication, Testing, and Reliability of Semiconductor Lasers, 1996
Optics Express, 2015
We demonstrate concurrent multi-channel transmission at 10 Gbps per channel of a DWDM silicon pho... more We demonstrate concurrent multi-channel transmission at 10 Gbps per channel of a DWDM silicon photonic transmitter. The DWDM transmitter is based on a single quantum dot comb laser and an array of microring resonator-based modulators. The resonant wavelengths of microrings are thermally tuned to align with the wavelengths provided by the comb laser. No obvious crosstalk is observed at 240 GHz channel spacing.
Conference on Lasers and Electro-Optics, 2016
2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016
A multi-channel ring-based transmitter is excited by a comb laser with 50GHz channel spacing and ... more A multi-channel ring-based transmitter is excited by a comb laser with 50GHz channel spacing and two channels are concurrently modulated at 10Gb/s. Bit error ratio tests show ∼3dB optical power penalty for 50GHz relative to larger channel spacing.
We present a procedure for modeling the energy efficiency of frequency comb sources based on empi... more We present a procedure for modeling the energy efficiency of frequency comb sources based on empirical device measurements. The proposed methodology allows for rapid exploration of the joint source-link design space to identify valid configurations that minimize the energy consumption of the link.
CLEO: 2015, 2015
A five-channel microring modulator-based DWDM silicon photonic transmitter driven by a quantum do... more A five-channel microring modulator-based DWDM silicon photonic transmitter driven by a quantum dot comb laser is demonstrated for the first time. 10Gbps eye diagrams are shown at both 25°C and 40°C.
IEEE Photonics Technology Letters
We present the measurements of the dispersion of InAs/GaAs quantum-dot lasers emitting at 1230 nm... more We present the measurements of the dispersion of InAs/GaAs quantum-dot lasers emitting at 1230 nm (ground state) and 1160 nm (excited state) from the analysis of their subthreshold emission spectra. Measurements from devices with various lengths allow us to deduce that the group velocity dispersion is as high as 2270 fs 2 mm −1 and is mainly due to the dispersion of bulk GaAs. The gain-induced dispersion varies with the injected current at a rate of −2 fs 2 mA −1 mm −1 , whereas the effect of a saturable absorber on the dispersion is found to be negligible. These results suggest that the implementation of integrated dispersion compensation could significantly reduce the pulse duration of these lasers in mode-locked regime and lead to an enhancement of the formation of optical frequency combs in these devices.
Optics letters, 2016
A compact, all-room-temperature, widely tunable, continuous wave laser source in the green spectr... more A compact, all-room-temperature, widely tunable, continuous wave laser source in the green spectral region (502.1-544.2 nm) with a maximum output power of 14.7 mW is demonstrated. This was made possible by utilizing second-harmonic generation (SHG) in a periodically poled potassium titanyl phosphate (PPKTP) crystal waveguide pumped by a quantum-well external-cavity fiber-coupled diode laser and exploiting the multimode-matching approach in nonlinear crystal waveguides. The dual-wavelength SHG in the wavelength region between 505.4 and 537.7 nm (with a wavelength difference ranging from 1.8 to 32.3 nm) and sum-frequency generation in a PPKTP waveguide is also demonstrated.
2016 International Conference Laser Optics (LO), 2016
Conference on Lasers and Electro-Optics, 2016
Broadband Access Communication Technologies X, 2016
2015 International Conference on Photonics in Switching (PS), 2015
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XIV, 2015
Workshop on Optical Components for Broadband Communication, 2006
ABSTRACT 980 nm vertical-cavity surface-emitting laser based on sub-monolayer growth of quantum d... more ABSTRACT 980 nm vertical-cavity surface-emitting laser based on sub-monolayer growth of quantum dots show at 25 and 85°C for 20 Gb/s without current adjustment clearly open eyes and error free operation with bit error rates better than 10-12. For these multimode lasers the small signal modulation bandwidth decreases only from 15 GHz at 25°C to 13 GHz at 85°C. Single mode devices demonstrate at 20°C a small signal modulation bandwidth of 16.6 GHz with 0.8 mW optical output power and a record high modulation current efficiency factor of 19 GHz/mA1/2.
Laser Diodes and Applications, 1995
Fabrication, Testing, and Reliability of Semiconductor Lasers, 1996
Optics Express, 2015
We demonstrate concurrent multi-channel transmission at 10 Gbps per channel of a DWDM silicon pho... more We demonstrate concurrent multi-channel transmission at 10 Gbps per channel of a DWDM silicon photonic transmitter. The DWDM transmitter is based on a single quantum dot comb laser and an array of microring resonator-based modulators. The resonant wavelengths of microrings are thermally tuned to align with the wavelengths provided by the comb laser. No obvious crosstalk is observed at 240 GHz channel spacing.