David Grider - Academia.edu (original) (raw)
Papers by David Grider
Infrared Readout Electronics, 1992
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999
Abstract This work addresses the scalability of power performance of AlGaN/GaN MODFETs with large... more Abstract This work addresses the scalability of power performance of AlGaN/GaN MODFETs with large gate periphery, as necessary for microwave power devices. High-frequency large-signal characteristics of AlGaN/GaN MODFETs have been studied for devices with gate ...
2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2011
Comparison of 4.5 kV SiC JBS and Si PiN Diodes ... Tam Duong1, Allen Hefner1, Karl Hobart2, Sei-H... more Comparison of 4.5 kV SiC JBS and Si PiN Diodes ... Tam Duong1, Allen Hefner1, Karl Hobart2, Sei-Hyung Ryu3, David Grider3, David Berning1, Jose M. Ortiz-Rodriguez1, Eugene Imhoff2, Jerry Sherbondy4 ... 1National Institute of Standards and Technology, ...
II. Characterization System used for Frequency Dependent Properties of GaN-based MODFETs Measurem... more II. Characterization System used for Frequency Dependent Properties of GaN-based MODFETs Measurements of the frequency dispersion of the output resistance ( RDS) and transconductance (gm) in this study were made by direct evaluation of the AC current and voltage components to determine these parameters (2). Coaxial transmission lines were employed for signal and bias paths to avoid device oscillation problems
IEEE Transactions on Microwave Theory and Techniques, 2000
Page 1. 1694 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 48, NO. 10, OCTOBER 2000 ... more Page 1. 1694 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 48, NO. 10, OCTOBER 2000 Power Performance and Scalability of AlGaN/GaN Power MODFETs Egor Alekseev, Member, IEEE, Dimitris ...
IEEE Transactions on Electron Devices, 1992
IEEE Electron Device Letters, 2000
Page 1. IEEE ELECTRON DEVICE LETTERS, VOL. 12, NO. 10, OCTOBER 1991 571 Gate Current in Self-Alig... more Page 1. IEEE ELECTRON DEVICE LETTERS, VOL. 12, NO. 10, OCTOBER 1991 571 Gate Current in Self-Aligned n-Channel and p-Channel Pseudomorphic Heterostructure Field-E ffect Transis tors Fritz L. Schuermever, Senior Member, IEEE, Michael Shur, Fellow, IEEE, and ...
2015 IEEE Energy Conversion Congress and Exposition (ECCE), 2015
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP), 2015
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015
2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 2015
2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 2015
2013 IEEE Energy Conversion Congress and Exposition, 2013
ABSTRACT The complementary inverter topology with N-channel and P-channel switching devices is a ... more ABSTRACT The complementary inverter topology with N-channel and P-channel switching devices is a known method of eliminating dv/dt stress on the gate drivers. In the Silicon (Si) based applications, this advantage did not gain wide attention due to inherent inefficiency of the P-type devices, and the matured technology to handle the dv/dt stress levels produced by these devices with highest blocking voltage rating of 6.5 kV. On the other hand, the ultrahigh voltage (> 12 kV) SiC devices generate high dv/dt due to their high speed switching. This requires meticulous design of the gate drivers for reliable operation of high power converters. As an easy alternative, the option of using a complementary inverter has been explored in this paper. Both N-channel and P-channel IGBTs with blocking capability of 15 kV have been investigated for the complementary structure. The N-IGBT is found to be more efficient than the P-IGBT, based on the experimental switching characterization results at 6 kV and 5 A. The results of the 3 kV half-bridge complementary inverter prototype are also presented. The option of trade-off of P-IGBT field-stop buffer layer parameters (thickness, doping concentration and lifetime) for better switching characteristics can provide the use of complementary topologies a promising alternative for high power conversion.
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014
2013 IEEE Energy Conversion Congress and Exposition, 2013
2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2012
ABSTRACT Silicon Carbide (SiC) devices and modules have been developed with high blocking voltage... more ABSTRACT Silicon Carbide (SiC) devices and modules have been developed with high blocking voltages for Medium Voltage power electronics applications. Silicon devices do not exhibit higher blocking voltage capability due to its relatively low band gap energy compared to SiC counterparts. For the first time, 12kV SiC IGBTs have been fabricated. These devices exhibit excellent switching and static characteristics. A Three-level Neutral Point Clamped Voltage Source Converter (3L-NPC VSC) has been simulated with newly developed SiC IGBTs. This 3L-NPC Converter is used as a 7.2kV grid interface for the solid state transformer and STATCOM operation. Also a comparative study is carried out with 3L-NPC VSC simulated with 10kV SiC MOSFET and 6.5kV Silicon IGBT device data.
2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2012
ABSTRACT Transformer less Intelligent Power Substation (TIPS) is a solid state replacement for th... more ABSTRACT Transformer less Intelligent Power Substation (TIPS) is a solid state replacement for the conventional bulky distribution transformers used for 13.8kV and 480V grid interconnectivity. A 100kVA 3L NPC converter is being built using 12kV SiC n-IGBT for the high voltage grid interface. In this paper, detailed thermal behavior of this converter is studied for optimum thermal design. The thermal profile at the die level at different power factor of operation is studied. This study helps the optimum component placement in the converter. Also it shows that the operating modes of the converter play a key role in optimum thermal design.
2011 IEEE Energy Conversion Congress and Exposition, 2011
Abstract The majority carrier domain of power semiconductor devices has been extended to 10 kV wi... more Abstract The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes. The devices exhibit excellent static and dynamic properties with encouraging preliminary reliability. Twenty-four ...
Infrared Readout Electronics, 1992
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999
Abstract This work addresses the scalability of power performance of AlGaN/GaN MODFETs with large... more Abstract This work addresses the scalability of power performance of AlGaN/GaN MODFETs with large gate periphery, as necessary for microwave power devices. High-frequency large-signal characteristics of AlGaN/GaN MODFETs have been studied for devices with gate ...
2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2011
Comparison of 4.5 kV SiC JBS and Si PiN Diodes ... Tam Duong1, Allen Hefner1, Karl Hobart2, Sei-H... more Comparison of 4.5 kV SiC JBS and Si PiN Diodes ... Tam Duong1, Allen Hefner1, Karl Hobart2, Sei-Hyung Ryu3, David Grider3, David Berning1, Jose M. Ortiz-Rodriguez1, Eugene Imhoff2, Jerry Sherbondy4 ... 1National Institute of Standards and Technology, ...
II. Characterization System used for Frequency Dependent Properties of GaN-based MODFETs Measurem... more II. Characterization System used for Frequency Dependent Properties of GaN-based MODFETs Measurements of the frequency dispersion of the output resistance ( RDS) and transconductance (gm) in this study were made by direct evaluation of the AC current and voltage components to determine these parameters (2). Coaxial transmission lines were employed for signal and bias paths to avoid device oscillation problems
IEEE Transactions on Microwave Theory and Techniques, 2000
Page 1. 1694 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 48, NO. 10, OCTOBER 2000 ... more Page 1. 1694 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 48, NO. 10, OCTOBER 2000 Power Performance and Scalability of AlGaN/GaN Power MODFETs Egor Alekseev, Member, IEEE, Dimitris ...
IEEE Transactions on Electron Devices, 1992
IEEE Electron Device Letters, 2000
Page 1. IEEE ELECTRON DEVICE LETTERS, VOL. 12, NO. 10, OCTOBER 1991 571 Gate Current in Self-Alig... more Page 1. IEEE ELECTRON DEVICE LETTERS, VOL. 12, NO. 10, OCTOBER 1991 571 Gate Current in Self-Aligned n-Channel and p-Channel Pseudomorphic Heterostructure Field-E ffect Transis tors Fritz L. Schuermever, Senior Member, IEEE, Michael Shur, Fellow, IEEE, and ...
2015 IEEE Energy Conversion Congress and Exposition (ECCE), 2015
2015 IEEE International Workshop on Integrated Power Packaging (IWIPP), 2015
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015
2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 2015
2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 2015
2013 IEEE Energy Conversion Congress and Exposition, 2013
ABSTRACT The complementary inverter topology with N-channel and P-channel switching devices is a ... more ABSTRACT The complementary inverter topology with N-channel and P-channel switching devices is a known method of eliminating dv/dt stress on the gate drivers. In the Silicon (Si) based applications, this advantage did not gain wide attention due to inherent inefficiency of the P-type devices, and the matured technology to handle the dv/dt stress levels produced by these devices with highest blocking voltage rating of 6.5 kV. On the other hand, the ultrahigh voltage (> 12 kV) SiC devices generate high dv/dt due to their high speed switching. This requires meticulous design of the gate drivers for reliable operation of high power converters. As an easy alternative, the option of using a complementary inverter has been explored in this paper. Both N-channel and P-channel IGBTs with blocking capability of 15 kV have been investigated for the complementary structure. The N-IGBT is found to be more efficient than the P-IGBT, based on the experimental switching characterization results at 6 kV and 5 A. The results of the 3 kV half-bridge complementary inverter prototype are also presented. The option of trade-off of P-IGBT field-stop buffer layer parameters (thickness, doping concentration and lifetime) for better switching characteristics can provide the use of complementary topologies a promising alternative for high power conversion.
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014
2013 IEEE Energy Conversion Congress and Exposition, 2013
2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2012
ABSTRACT Silicon Carbide (SiC) devices and modules have been developed with high blocking voltage... more ABSTRACT Silicon Carbide (SiC) devices and modules have been developed with high blocking voltages for Medium Voltage power electronics applications. Silicon devices do not exhibit higher blocking voltage capability due to its relatively low band gap energy compared to SiC counterparts. For the first time, 12kV SiC IGBTs have been fabricated. These devices exhibit excellent switching and static characteristics. A Three-level Neutral Point Clamped Voltage Source Converter (3L-NPC VSC) has been simulated with newly developed SiC IGBTs. This 3L-NPC Converter is used as a 7.2kV grid interface for the solid state transformer and STATCOM operation. Also a comparative study is carried out with 3L-NPC VSC simulated with 10kV SiC MOSFET and 6.5kV Silicon IGBT device data.
2012 IEEE Energy Conversion Congress and Exposition (ECCE), 2012
ABSTRACT Transformer less Intelligent Power Substation (TIPS) is a solid state replacement for th... more ABSTRACT Transformer less Intelligent Power Substation (TIPS) is a solid state replacement for the conventional bulky distribution transformers used for 13.8kV and 480V grid interconnectivity. A 100kVA 3L NPC converter is being built using 12kV SiC n-IGBT for the high voltage grid interface. In this paper, detailed thermal behavior of this converter is studied for optimum thermal design. The thermal profile at the die level at different power factor of operation is studied. This study helps the optimum component placement in the converter. Also it shows that the operating modes of the converter play a key role in optimum thermal design.
2011 IEEE Energy Conversion Congress and Exposition, 2011
Abstract The majority carrier domain of power semiconductor devices has been extended to 10 kV wi... more Abstract The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes. The devices exhibit excellent static and dynamic properties with encouraging preliminary reliability. Twenty-four ...