Karel De Smet - Academia.edu (original) (raw)

Uploads

Papers by Karel De Smet

Research paper thumbnail of Towards twin-free molecular beam epitaxy of 2D chalcogenides explained by stronger interlayer van der Waals coupling

arXiv: Materials Science, 2020

Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integrati... more Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integration of van der Waals (vdW) materials in the semiconductor industry. The large-area (quasi-)vdW epitaxy of layered 2D chalcogenides is consequently carefully being researched since these materials hold very promising properties for future nanoelectronic applications. The formation of defects such as stacking faults like 60o twins and consequently 60o grain boundaries is still of major concern for the defect-free epitaxial growth of 2D chalcogenides. Although growth strategies to overcome the occurrence of these defects are currently being considered, more fundamental understanding on the origin of these defects at the initial stages of the growth is highly essential. Therefore this work focuses on the understanding of 60o twin formation in (quasi-)vdW epitaxy of 2D chalcogenides relying on systematic molecular beam epitaxy (MBE) experiments supported by density functional theory (DFT) calc...

Research paper thumbnail of Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

Advanced Materials Interfaces, 2021

Research paper thumbnail of Towards twin-free molecular beam epitaxy of 2D chalcogenides explained by stronger interlayer van der Waals coupling

arXiv: Materials Science, 2020

Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integrati... more Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integration of van der Waals (vdW) materials in the semiconductor industry. The large-area (quasi-)vdW epitaxy of layered 2D chalcogenides is consequently carefully being researched since these materials hold very promising properties for future nanoelectronic applications. The formation of defects such as stacking faults like 60o twins and consequently 60o grain boundaries is still of major concern for the defect-free epitaxial growth of 2D chalcogenides. Although growth strategies to overcome the occurrence of these defects are currently being considered, more fundamental understanding on the origin of these defects at the initial stages of the growth is highly essential. Therefore this work focuses on the understanding of 60o twin formation in (quasi-)vdW epitaxy of 2D chalcogenides relying on systematic molecular beam epitaxy (MBE) experiments supported by density functional theory (DFT) calc...

Research paper thumbnail of Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

Advanced Materials Interfaces, 2021

Log In