Dennis Hall - Profile on Academia.edu (original) (raw)
Papers by Dennis Hall
Physical Review B, 1995
Photoluminescence (PL) from the recombination of isoelectronic bound excitons in beryllium-doped ... more Photoluminescence (PL) from the recombination of isoelectronic bound excitons in beryllium-doped bulk silicon is measured at 9 K. Pressure tuning demonstrates that two of the PL peaks, which are in the spectral region of phonon replicas previously associated with the recombination of excitons bound to Be pairs, are certainly not phonon replicas of the zero-phonon peak, and likely correspond to the recombination of excitons bound to other Be complexes. This study illustrates the value of applying pressure to a material to elucidate its properties at ambient pressure.
Optics and Photonics News, 1990
Switching, logic, & storage OPTICS vs. the COMPETITION This article is based on a panel discussio... more Switching, logic, & storage OPTICS vs. the COMPETITION This article is based on a panel discussion on Issues in Optical Technologies: Switching, Logic, and Storage, held in Anaheim on May 22 as part of the 1990 Conference on Lasers and Electro-Optics (CLEO®). The five panelists, representing both optical and competing technologies, were:
Isoelectronic bound exciton photoluminescence from a metastable defect in sulphur-doped silicon
Materials Science and Engineering: B, 1989
Abstract We establish that two deep photoluminescence (PL) systems in Si: S arise from the decay ... more Abstract We establish that two deep photoluminescence (PL) systems in Si: S arise from the decay of isoelectronic bound excitons (IBEs) at two metastable configurations of the constituents of a single defect. Each system has two principal zero-phonon lines. We ...
Integrated Optics III, 1983
The discovery of surface-enhanced Raman scattering (SERS) has generated widespread activity on tw... more The discovery of surface-enhanced Raman scattering (SERS) has generated widespread activity on two fronts: 1) investigations of the physical mechanisms responsible for SERS, and 2) applications of those mechanisms to intensify other optical processes. The term SERS refers to the phenomenon in which the normally weak Stokes-shifted Raman signal from a molecular monolayer is increased by factors of 106 or more when the molecular layer is placed on a suitably roughened metal substrate. It is now rather widely believed that SERS is caused by an interaction between the molecule and localized plasma resonances (LPR) in the roughened substrate. The LPR are oscillations of the conduction electrons within the "bumps on the roughened substrate, and are excited by an incident optical beam. The LPR develop very strong surface electric fields; a molecule placed in close proximity to the "bumps" interacts with the strong field of the LPR giving rise to the enhanced Raman scattering.
A comment on the coupled-mode equations used in guided-wave optics
Optics Communications, 1991
Abstract The neglect of certain second derivatives in an often used derivation of the coupled-mod... more Abstract The neglect of certain second derivatives in an often used derivation of the coupled-mode equations is unnecessary, as pointed out in 1979 by Sipe et al., and more recently by Crosignani et al. A derivation that begins with the wave equation rather than directly with Maxwell's equations is illustrated.
Vacuum, 2005
We describe here a new technology, dislocation engineering, and in particular how this approach, ... more We describe here a new technology, dislocation engineering, and in particular how this approach, when incorporated appropriately in to a p-n junction, can add the new functionality of efficient electroluminescence at room temperature from silicon-based light emitting devices. Simple (undoped) silicon devices emit at 1.15 mm, at the Si band gap energy. In this paper, we show how emission at other wavelengths, such as 1.3 and 1.5 mm, can be achieved by doping a standard dislocation engineered light emitting device with an appropriate optical centre, such as sulphur and erbium.
Scattering of optical guided waves by waveguide surface roughness: a three-dimensional treatment
Optics Letters, 1981
The scattering of optical guided waves by waveguide surface roughness has been analyzed in three ... more The scattering of optical guided waves by waveguide surface roughness has been analyzed in three dimensions. The scattered fields were determined by satisfying the boundary conditions to first order in the height of the surface roughness. The utility of the theory for practical problems is illustrated by developing explicit formulas for the power radiated by a TE guided wave into the medium above the planar waveguide. These formulas are expressed in terms of the surface autocorrelation function.
Highly directional surface emission from concentric-circle gratings on planar optical waveguides: the f ield expansion method
Journal of the Optical Society of America A, 1995
Page 1. 84 J. Opt. Soc. Am. A/Vol. 12, No. 1/January 1995 RH Jordan and DG Hall Highly directiona... more Page 1. 84 J. Opt. Soc. Am. A/Vol. 12, No. 1/January 1995 RH Jordan and DG Hall Highly directional surface emission from concentric-circle gratings on planar optical waveguides: the f ield expansion method Rebecca H. Jordan and Dennis G. Hall ...
Survey of Silicon-Based Integrated Optics
Computer, 1987
Several integrated optical systems have been proposed and demonstrated which employ a simple, Si-... more Several integrated optical systems have been proposed and demonstrated which employ a simple, Si-based optical waveguide geometry. Since it is difficult to find a material with a refractive index greater than the 3.5 of silicon, it is necessary to grow a layer of SiO2, with the much lower refractive index value of about 1.46, on the silicon substrate before depositing
Approved for public release; distribution unlimited. 17. DISTRIBUTION STATEMENT (of the abstract ... more Approved for public release; distribution unlimited. 17. DISTRIBUTION STATEMENT (of the abstract ntered In Block 20. It diflerent from Report) NA II. SUPPLEMENTARY NOTES The view, opinions, and/or findings contained in this report are those of the author(s) and should not be construed as an official Department of the Army position, policy, or decision, unless so dt1Asna Lre by other dclriimpntarinn 19. KEY WOIROS (Coltnue on reverse side It necessary and Identify by block number)
Chapter 3 Radiative Isoelectronic Impurities in Silicon and Silicon-Germanium Alloys and Superlattices
Semiconductors and Semimetals
ABSTRACT
Curved grating fabrication techniques for surface-emitting distributed feedback lasers
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2975 King et at; Curved grating fabrication techniques 2375 CCGSE OUTPUT (8175 A 0 25 65 85 %AI A... more 2975 King et at; Curved grating fabrication techniques 2375 CCGSE OUTPUT (8175 A 0 25 65 85 %AI AIGaAs UPPER CLAD GaAs QUANTUM WELL ■ AIGaAs CORE AIGaAs LOWER CLAD GaAs SUBSTRATE Deoth Fio. í . Schematic drawing of the CCGSE laser structure. The ...
Physical Review B
The spectral density A(Q, E) is calculated exactly for a one-dimensional model of an amorphous so... more The spectral density A(Q, E) is calculated exactly for a one-dimensional model of an amorphous solid. The model contains an adjustable short-range order parameter u, and A(Q, E) is calculated for several values of cl.. The harmonic-oscillator Hamiltonian appropriate to lattice vibrations and a tight-binding Hamiltonian describing in a simplified way either electrons or spin waves are studied for nearest-neighbor interactions. The calculated spectral densities are compared with the recent neutron-scattering measurements of Mook, Wakabayashi, and Pan.
Physical Review B
The interaction between the localized plasma resonances associated with small metal particles and... more The interaction between the localized plasma resonances associated with small metal particles and surface plasmons on a nearby metal-dielectric interface has been observed. Shifts in the surface-plasrnon dispersion relation and changes in the effective absorption of the metal particles {Ag-island resonances) resulting from this interaction were measured as a function of the separation d between the two structures. In our geometry, the two excitations are most strongly coupled for a separation d = 25 nm,
Physical Review B
We report silicon band-edge photoluminescence ͑PL͒ with photon energy of 1.1 eV and external quan... more We report silicon band-edge photoluminescence ͑PL͒ with photon energy of 1.1 eV and external quantum efficiency ͑EQE͒ better than 10 Ϫ3 in samples prepared by high-temperature oxidation of porous silicon. The integrated PL intensity is insensitive to temperature. The EQE strongly depends on the annealing conditions: temperature, time, and ambient. A model is proposed in which the PL originates from silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix. ͓S0163-1829͑96͒52336-2͔
Proceedings of the IEEE
cussion on telecommunication circuits is limited to codecs followed by the typical available IC's... more cussion on telecommunication circuits is limited to codecs followed by the typical available IC's. In the next chapter, various memory types/technologies and their characteristics are compared in table form. CMOS memory cell architecture is d e s m i d followed by memory system organization. Characteristics of RAM and ROM, along with the popular CMOS IC's available and their characterictics are provided in several tables. The book ends with a discussion on CMOS microprocessors Microprocessor organization is presented, followed by a brief discussion of the available CMOS microprocessor organizations, from a 1-bit processor (MC14500) to a 16-bit processor. Tables covering the characteristics of commercially available CMOS microprocessors, microcomputers, and support chips are most usefut Typical applications are also discussed. The main shortcoming of this book is in its condensed treatment of the m a t e d I believe that it would have benefited a larger audience if the fundamental characteristics of CMOS had been dealt with in a more elementary, understandable way, rather than as a quick collection of thoughts.
Physical Review B
We report the observation and characterization of near-infrared optical emission from seleniumdop... more We report the observation and characterization of near-infrared optical emission from seleniumdoped crystalline silicon. The spectrum, radiative lifetime, external quantum ef6ciency, and thermal dissociation energy of the observed emission are strikingly similar to those we reported earlier [T. G. Brown and D. G. Hall, Appl. Phys. Lett. 49, 245 (1986}]for sulfur-doped silicon. We attribute the emission to the radiative decay of an exciton bound to a Se-related isoelectronic complex, and suggest that oxygen is a participant in this complex. The radiative decay of excitons bound to isoelectronic (i.e. , isovalent) impurities is an important mechanism in both direct and indirect band-gap semiconductors. This process was first observed and reported by Dietz et al. in connection with unknown impurities in ZnTe, a directband-gap II-VI compound semiconductor. ' Hopfield et al. subsequently showed that the observed emission near hv=2 eV originates with the decay of an exciton bound to an oxygen atom substituting isoelectronically for a tellurium atom. Bound-exciton emission has been reported for two types of isoelectronic impurity centers in the indirect-band-gap III-V compound semiconductor GaP. The first occurs when a single, group-V, atom, ni-' Only in the case of Si:Be has the nature of the complex been completely identified (Be pairs).
Optics News
The conical geometry can also be implemented in a nov el architecture involving very high density... more The conical geometry can also be implemented in a nov el architecture involving very high density optical inter connects on a photorefractive substrate. In other recent work, 2 we have designed and studied a 100 x 100 optical switch on a 1 cm 2 substrate of LiNb0 3. Planar intercon nect holograms are located in a rectangular grid pattern. Each hologram (grating) is written by short wavelength out-of-plane writing beams located on a conical surface at angles of incidence chosen to facilitate Bragg diffraction at a longer wavelength guided mode. This approach has the advantage that many intersections are simultaneously written and coherency and erasure problems are avoided.
Public reporting burden for this collection of information is estimated to average 1 hour per res... more Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Washington Headquarters Services, Directorate for Information Operations and Reports,
Physical Review B, 1995
Photoluminescence (PL) from the recombination of isoelectronic bound excitons in beryllium-doped ... more Photoluminescence (PL) from the recombination of isoelectronic bound excitons in beryllium-doped bulk silicon is measured at 9 K. Pressure tuning demonstrates that two of the PL peaks, which are in the spectral region of phonon replicas previously associated with the recombination of excitons bound to Be pairs, are certainly not phonon replicas of the zero-phonon peak, and likely correspond to the recombination of excitons bound to other Be complexes. This study illustrates the value of applying pressure to a material to elucidate its properties at ambient pressure.
Optics and Photonics News, 1990
Switching, logic, & storage OPTICS vs. the COMPETITION This article is based on a panel discussio... more Switching, logic, & storage OPTICS vs. the COMPETITION This article is based on a panel discussion on Issues in Optical Technologies: Switching, Logic, and Storage, held in Anaheim on May 22 as part of the 1990 Conference on Lasers and Electro-Optics (CLEO®). The five panelists, representing both optical and competing technologies, were:
Isoelectronic bound exciton photoluminescence from a metastable defect in sulphur-doped silicon
Materials Science and Engineering: B, 1989
Abstract We establish that two deep photoluminescence (PL) systems in Si: S arise from the decay ... more Abstract We establish that two deep photoluminescence (PL) systems in Si: S arise from the decay of isoelectronic bound excitons (IBEs) at two metastable configurations of the constituents of a single defect. Each system has two principal zero-phonon lines. We ...
Integrated Optics III, 1983
The discovery of surface-enhanced Raman scattering (SERS) has generated widespread activity on tw... more The discovery of surface-enhanced Raman scattering (SERS) has generated widespread activity on two fronts: 1) investigations of the physical mechanisms responsible for SERS, and 2) applications of those mechanisms to intensify other optical processes. The term SERS refers to the phenomenon in which the normally weak Stokes-shifted Raman signal from a molecular monolayer is increased by factors of 106 or more when the molecular layer is placed on a suitably roughened metal substrate. It is now rather widely believed that SERS is caused by an interaction between the molecule and localized plasma resonances (LPR) in the roughened substrate. The LPR are oscillations of the conduction electrons within the "bumps on the roughened substrate, and are excited by an incident optical beam. The LPR develop very strong surface electric fields; a molecule placed in close proximity to the "bumps" interacts with the strong field of the LPR giving rise to the enhanced Raman scattering.
A comment on the coupled-mode equations used in guided-wave optics
Optics Communications, 1991
Abstract The neglect of certain second derivatives in an often used derivation of the coupled-mod... more Abstract The neglect of certain second derivatives in an often used derivation of the coupled-mode equations is unnecessary, as pointed out in 1979 by Sipe et al., and more recently by Crosignani et al. A derivation that begins with the wave equation rather than directly with Maxwell's equations is illustrated.
Vacuum, 2005
We describe here a new technology, dislocation engineering, and in particular how this approach, ... more We describe here a new technology, dislocation engineering, and in particular how this approach, when incorporated appropriately in to a p-n junction, can add the new functionality of efficient electroluminescence at room temperature from silicon-based light emitting devices. Simple (undoped) silicon devices emit at 1.15 mm, at the Si band gap energy. In this paper, we show how emission at other wavelengths, such as 1.3 and 1.5 mm, can be achieved by doping a standard dislocation engineered light emitting device with an appropriate optical centre, such as sulphur and erbium.
Scattering of optical guided waves by waveguide surface roughness: a three-dimensional treatment
Optics Letters, 1981
The scattering of optical guided waves by waveguide surface roughness has been analyzed in three ... more The scattering of optical guided waves by waveguide surface roughness has been analyzed in three dimensions. The scattered fields were determined by satisfying the boundary conditions to first order in the height of the surface roughness. The utility of the theory for practical problems is illustrated by developing explicit formulas for the power radiated by a TE guided wave into the medium above the planar waveguide. These formulas are expressed in terms of the surface autocorrelation function.
Highly directional surface emission from concentric-circle gratings on planar optical waveguides: the f ield expansion method
Journal of the Optical Society of America A, 1995
Page 1. 84 J. Opt. Soc. Am. A/Vol. 12, No. 1/January 1995 RH Jordan and DG Hall Highly directiona... more Page 1. 84 J. Opt. Soc. Am. A/Vol. 12, No. 1/January 1995 RH Jordan and DG Hall Highly directional surface emission from concentric-circle gratings on planar optical waveguides: the f ield expansion method Rebecca H. Jordan and Dennis G. Hall ...
Survey of Silicon-Based Integrated Optics
Computer, 1987
Several integrated optical systems have been proposed and demonstrated which employ a simple, Si-... more Several integrated optical systems have been proposed and demonstrated which employ a simple, Si-based optical waveguide geometry. Since it is difficult to find a material with a refractive index greater than the 3.5 of silicon, it is necessary to grow a layer of SiO2, with the much lower refractive index value of about 1.46, on the silicon substrate before depositing
Approved for public release; distribution unlimited. 17. DISTRIBUTION STATEMENT (of the abstract ... more Approved for public release; distribution unlimited. 17. DISTRIBUTION STATEMENT (of the abstract ntered In Block 20. It diflerent from Report) NA II. SUPPLEMENTARY NOTES The view, opinions, and/or findings contained in this report are those of the author(s) and should not be construed as an official Department of the Army position, policy, or decision, unless so dt1Asna Lre by other dclriimpntarinn 19. KEY WOIROS (Coltnue on reverse side It necessary and Identify by block number)
Chapter 3 Radiative Isoelectronic Impurities in Silicon and Silicon-Germanium Alloys and Superlattices
Semiconductors and Semimetals
ABSTRACT
Curved grating fabrication techniques for surface-emitting distributed feedback lasers
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2975 King et at; Curved grating fabrication techniques 2375 CCGSE OUTPUT (8175 A 0 25 65 85 %AI A... more 2975 King et at; Curved grating fabrication techniques 2375 CCGSE OUTPUT (8175 A 0 25 65 85 %AI AIGaAs UPPER CLAD GaAs QUANTUM WELL ■ AIGaAs CORE AIGaAs LOWER CLAD GaAs SUBSTRATE Deoth Fio. í . Schematic drawing of the CCGSE laser structure. The ...
Physical Review B
The spectral density A(Q, E) is calculated exactly for a one-dimensional model of an amorphous so... more The spectral density A(Q, E) is calculated exactly for a one-dimensional model of an amorphous solid. The model contains an adjustable short-range order parameter u, and A(Q, E) is calculated for several values of cl.. The harmonic-oscillator Hamiltonian appropriate to lattice vibrations and a tight-binding Hamiltonian describing in a simplified way either electrons or spin waves are studied for nearest-neighbor interactions. The calculated spectral densities are compared with the recent neutron-scattering measurements of Mook, Wakabayashi, and Pan.
Physical Review B
The interaction between the localized plasma resonances associated with small metal particles and... more The interaction between the localized plasma resonances associated with small metal particles and surface plasmons on a nearby metal-dielectric interface has been observed. Shifts in the surface-plasrnon dispersion relation and changes in the effective absorption of the metal particles {Ag-island resonances) resulting from this interaction were measured as a function of the separation d between the two structures. In our geometry, the two excitations are most strongly coupled for a separation d = 25 nm,
Physical Review B
We report silicon band-edge photoluminescence ͑PL͒ with photon energy of 1.1 eV and external quan... more We report silicon band-edge photoluminescence ͑PL͒ with photon energy of 1.1 eV and external quantum efficiency ͑EQE͒ better than 10 Ϫ3 in samples prepared by high-temperature oxidation of porous silicon. The integrated PL intensity is insensitive to temperature. The EQE strongly depends on the annealing conditions: temperature, time, and ambient. A model is proposed in which the PL originates from silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix. ͓S0163-1829͑96͒52336-2͔
Proceedings of the IEEE
cussion on telecommunication circuits is limited to codecs followed by the typical available IC's... more cussion on telecommunication circuits is limited to codecs followed by the typical available IC's. In the next chapter, various memory types/technologies and their characteristics are compared in table form. CMOS memory cell architecture is d e s m i d followed by memory system organization. Characteristics of RAM and ROM, along with the popular CMOS IC's available and their characterictics are provided in several tables. The book ends with a discussion on CMOS microprocessors Microprocessor organization is presented, followed by a brief discussion of the available CMOS microprocessor organizations, from a 1-bit processor (MC14500) to a 16-bit processor. Tables covering the characteristics of commercially available CMOS microprocessors, microcomputers, and support chips are most usefut Typical applications are also discussed. The main shortcoming of this book is in its condensed treatment of the m a t e d I believe that it would have benefited a larger audience if the fundamental characteristics of CMOS had been dealt with in a more elementary, understandable way, rather than as a quick collection of thoughts.
Physical Review B
We report the observation and characterization of near-infrared optical emission from seleniumdop... more We report the observation and characterization of near-infrared optical emission from seleniumdoped crystalline silicon. The spectrum, radiative lifetime, external quantum ef6ciency, and thermal dissociation energy of the observed emission are strikingly similar to those we reported earlier [T. G. Brown and D. G. Hall, Appl. Phys. Lett. 49, 245 (1986}]for sulfur-doped silicon. We attribute the emission to the radiative decay of an exciton bound to a Se-related isoelectronic complex, and suggest that oxygen is a participant in this complex. The radiative decay of excitons bound to isoelectronic (i.e. , isovalent) impurities is an important mechanism in both direct and indirect band-gap semiconductors. This process was first observed and reported by Dietz et al. in connection with unknown impurities in ZnTe, a directband-gap II-VI compound semiconductor. ' Hopfield et al. subsequently showed that the observed emission near hv=2 eV originates with the decay of an exciton bound to an oxygen atom substituting isoelectronically for a tellurium atom. Bound-exciton emission has been reported for two types of isoelectronic impurity centers in the indirect-band-gap III-V compound semiconductor GaP. The first occurs when a single, group-V, atom, ni-' Only in the case of Si:Be has the nature of the complex been completely identified (Be pairs).
Optics News
The conical geometry can also be implemented in a nov el architecture involving very high density... more The conical geometry can also be implemented in a nov el architecture involving very high density optical inter connects on a photorefractive substrate. In other recent work, 2 we have designed and studied a 100 x 100 optical switch on a 1 cm 2 substrate of LiNb0 3. Planar intercon nect holograms are located in a rectangular grid pattern. Each hologram (grating) is written by short wavelength out-of-plane writing beams located on a conical surface at angles of incidence chosen to facilitate Bragg diffraction at a longer wavelength guided mode. This approach has the advantage that many intersections are simultaneously written and coherency and erasure problems are avoided.
Public reporting burden for this collection of information is estimated to average 1 hour per res... more Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Washington Headquarters Services, Directorate for Information Operations and Reports,