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Papers by Donatella Puglisi

Research paper thumbnail of Catalytic metal-gate field effect transistors based on SiC for indoor air quality control

Journal of Sensors and Sensor Systems, 2015

High-temperature iridium-gated field effect transistors based on silicon carbide have been used f... more High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330 • C and at different levels of relative humidity up to 60 %, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.

Research paper thumbnail of SiC-FET Sensors for Selective and Quantitative Detection of VOCs Down to Ppb Level

Procedia Engineering, 2016

With the increased interest in development of cheap, simple means for indoor air quality monitori... more With the increased interest in development of cheap, simple means for indoor air quality monitoring, and specifically in relation to certain well-known pollutant substances with adverse health effects even at very low concentrations, such as different Volatile Organic Compounds (VOCs), this contribution aims at providing an overview of the development status of the silicon carbide field effect transistor (SiC FET) based sensor platform for ppb level detection of VOCs. Optimizing the transducer design, the gas-sensitive material(s) composition, structure and processing, its mode of operation-applying temperature cycled operation in conjunction with multivariate data evaluation-and long-term performance it has been possible to demonstrate promising results regarding the sensor technology's ability to achieve both single-digit ppb sensitivity towards e.g. naphthalene as well as selective detection of individual substances in a mixture of different VOCs.

Research paper thumbnail of X-<formula formulatype="inline"><tex Notation="TeX">$\gamma$</tex> </formula> Ray Spectroscopy With Semi-Insulating 4H-Silicon Carbide

IEEE Transactions on Nuclear Science, 2000

ABSTRACT

Research paper thumbnail of Silicon carbide detector for laser-generated plasma radiation

Applied Surface Science, 2013

We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiatio... more We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emitted by laser generated plasmas. The detector has been employed in time of flight (TOF) configuration within an experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5 mm 2 area 100 nm thick circular Ni SiC Schottky junction on a high purity 4H SiC epitaxial layer 115 m thick. Current signals from the detector with amplitudes up to 1.6 A have been measured, achieving voltage signals over 80 V on a 50 load resistance with excellent signal to noise ratios. Resolution of few nanoseconds has been experimentally demonstrated in TOF measurements. The detector has operated at 250 V DC bias under extreme operating conditions with no observable performance degradation.

Research paper thumbnail of Discrimination and quantification of volatile organic compounds in the ppb-range with gas sensitive SiC-FETs using multivariate statistics

Sensors and Actuators B: Chemical, 2015

ABSTRACT

Research paper thumbnail of Catalytic metal-gate field effect transistors based on SiC for indoor air quality control

High-temperature iridium-gated field effect transistors based on silicon carbide have been used f... more High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330 °C and at different levels of relative humidity up to 60 %, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.

Research paper thumbnail of Advances in silicon carbide X-ray detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011

ABSTRACT

Research paper thumbnail of Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC

Materials Science Forum, 2013

Large variations have been observed in the thickness uniformity and carrier concentration of epit... more Large variations have been observed in the thickness uniformity and carrier concentration of epitaxial graphene grown on SiC by sublimation for samples grown under identical conditions and on nominally on-axis hexagonal SiC (0001) substrates. We have previously shown that these issues are both related to the morphology of the graphene-SiC surface after sublimation growth.

Research paper thumbnail of Discrimination and quantification of volatile organic compounds in the ppb-range with gas sensitive SiC-FETs using multivariate statistics

Sensors and Actuators B: Chemical, 2015

ABSTRACT

Research paper thumbnail of Conference Diary

Research paper thumbnail of Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe

Materials Science Forum, 2009

1Department of Physics and National Institute of Nuclear Physics INFN – University of Catania, Vi... more 1Department of Physics and National Institute of Nuclear Physics INFN – University of Catania, Via S. Sofia 64, 95123 Catania, Italy 2Department of Electronics Engineering and Information Science and National Institute of Nuclear Physics INFN – Politecnico of Milano, Via ...

Research paper thumbnail of Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors

Materials Science Forum, 2009

1Politecnico di Milano, Department of Electronics Engineering and Information Science and Nationa... more 1Politecnico di Milano, Department of Electronics Engineering and Information Science and National Institute of Nuclear Physics INFN, Via Anzani 42, 22100 Como, Italy 2Physics Department, Modena and Reggio Emilia University and National Institute of Nuclear ...

Research paper thumbnail of Silicon carbide field effect transistors for detection of ultra-low concentrations of hazardous volatile organic compounds

Research paper thumbnail of Adjusting the electronic properties and gas reactivity of epitaxial graphene by thin surface metallization

Physica B: Condensed Matter, 2014

ABSTRACT Graphene-based chemical gas sensors normally show ultra-high sensitivity to certain gas ... more ABSTRACT Graphene-based chemical gas sensors normally show ultra-high sensitivity to certain gas molecules but at the same time suffer from poor selectivity and slow response and recovery times. Several approaches based on functionalization or modification of the graphene surface have been demonstrated as means to improve these issues, but most such measures result in poor reproducibility. In this study we investigate reproducible graphene surface modifications by sputter deposition of thin nanostructured Au or Pt layers. It is demonstrated that under the right metallization conditions the electronic properties of the surface remain those of graphene, while the surface chemistry is modified to improve sensitivity, selectivity and speed of response to nitrogen dioxide.

Research paper thumbnail of Proton driven acceleration by intense laser pulses irradiating thin hydrogenated targets

Applied Surface Science, 2013

ABSTRACT The Asterix iodine laser of the PALS laboratory in Prague, operating at 1315 nm fundamen... more ABSTRACT The Asterix iodine laser of the PALS laboratory in Prague, operating at 1315 nm fundamental frequency, 300 ps pulse duration, 600 J maximum pulse energy and 1016 W/cm2 intensity, is employed to irradiate thin hydrogenated targets placed in high vacuum. Different metallic and polymeric targets allow to generate multi-energetic and multi-specie ion beams showing peculiar properties. The plasma obtained by the laser irradiation is monitored, in terms of properties of the emitted charge particles, by using time-of-flight techniques and Thomson parabola spectrometer (TPS). A particular attention is given to the proton beam production in terms of the maximum energy, emission yield and angular distribution as a function of the laser energy, focal position (FP), target thickness and composition.

Research paper thumbnail of Silicon carbide detector for laser-generated plasma radiation

Applied Surface Science, 2013

We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiatio... more We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emitted by laser generated plasmas. The detector has been employed in time of flight (TOF) configuration within an experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5 mm 2 area 100 nm thick circular Ni SiC Schottky junction on a high purity 4H SiC epitaxial layer 115 m thick. Current signals from the detector with amplitudes up to 1.6 A have been measured, achieving voltage signals over 80 V on a 50 load resistance with excellent signal to noise ratios. Resolution of few nanoseconds has been experimentally demonstrated in TOF measurements. The detector has operated at 250 V DC bias under extreme operating conditions with no observable performance degradation.

Research paper thumbnail of Catalytic metal-gate field effect transistors based on SiC for indoor air quality control

High-temperature iridium-gated field effect transistors based on silicon carbide have been used f... more High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330 °C and at different levels of relative humidity up to 60%, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.

Research paper thumbnail of Catalytic metal-gate field effect transistors based on SiC for indoor air quality control

Journal of Sensors and Sensor Systems, 2015

High-temperature iridium-gated field effect transistors based on silicon carbide have been used f... more High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330 • C and at different levels of relative humidity up to 60 %, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.

Research paper thumbnail of SiC-FET Sensors for Selective and Quantitative Detection of VOCs Down to Ppb Level

Procedia Engineering, 2016

With the increased interest in development of cheap, simple means for indoor air quality monitori... more With the increased interest in development of cheap, simple means for indoor air quality monitoring, and specifically in relation to certain well-known pollutant substances with adverse health effects even at very low concentrations, such as different Volatile Organic Compounds (VOCs), this contribution aims at providing an overview of the development status of the silicon carbide field effect transistor (SiC FET) based sensor platform for ppb level detection of VOCs. Optimizing the transducer design, the gas-sensitive material(s) composition, structure and processing, its mode of operation-applying temperature cycled operation in conjunction with multivariate data evaluation-and long-term performance it has been possible to demonstrate promising results regarding the sensor technology's ability to achieve both single-digit ppb sensitivity towards e.g. naphthalene as well as selective detection of individual substances in a mixture of different VOCs.

Research paper thumbnail of X-<formula formulatype="inline"><tex Notation="TeX">$\gamma$</tex> </formula> Ray Spectroscopy With Semi-Insulating 4H-Silicon Carbide

IEEE Transactions on Nuclear Science, 2000

ABSTRACT

Research paper thumbnail of Silicon carbide detector for laser-generated plasma radiation

Applied Surface Science, 2013

We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiatio... more We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emitted by laser generated plasmas. The detector has been employed in time of flight (TOF) configuration within an experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5 mm 2 area 100 nm thick circular Ni SiC Schottky junction on a high purity 4H SiC epitaxial layer 115 m thick. Current signals from the detector with amplitudes up to 1.6 A have been measured, achieving voltage signals over 80 V on a 50 load resistance with excellent signal to noise ratios. Resolution of few nanoseconds has been experimentally demonstrated in TOF measurements. The detector has operated at 250 V DC bias under extreme operating conditions with no observable performance degradation.

Research paper thumbnail of Discrimination and quantification of volatile organic compounds in the ppb-range with gas sensitive SiC-FETs using multivariate statistics

Sensors and Actuators B: Chemical, 2015

ABSTRACT

Research paper thumbnail of Catalytic metal-gate field effect transistors based on SiC for indoor air quality control

High-temperature iridium-gated field effect transistors based on silicon carbide have been used f... more High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330 °C and at different levels of relative humidity up to 60 %, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.

Research paper thumbnail of Advances in silicon carbide X-ray detectors

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011

ABSTRACT

Research paper thumbnail of Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC

Materials Science Forum, 2013

Large variations have been observed in the thickness uniformity and carrier concentration of epit... more Large variations have been observed in the thickness uniformity and carrier concentration of epitaxial graphene grown on SiC by sublimation for samples grown under identical conditions and on nominally on-axis hexagonal SiC (0001) substrates. We have previously shown that these issues are both related to the morphology of the graphene-SiC surface after sublimation growth.

Research paper thumbnail of Discrimination and quantification of volatile organic compounds in the ppb-range with gas sensitive SiC-FETs using multivariate statistics

Sensors and Actuators B: Chemical, 2015

ABSTRACT

Research paper thumbnail of Conference Diary

Research paper thumbnail of Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe

Materials Science Forum, 2009

1Department of Physics and National Institute of Nuclear Physics INFN – University of Catania, Vi... more 1Department of Physics and National Institute of Nuclear Physics INFN – University of Catania, Via S. Sofia 64, 95123 Catania, Italy 2Department of Electronics Engineering and Information Science and National Institute of Nuclear Physics INFN – Politecnico of Milano, Via ...

Research paper thumbnail of Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors

Materials Science Forum, 2009

1Politecnico di Milano, Department of Electronics Engineering and Information Science and Nationa... more 1Politecnico di Milano, Department of Electronics Engineering and Information Science and National Institute of Nuclear Physics INFN, Via Anzani 42, 22100 Como, Italy 2Physics Department, Modena and Reggio Emilia University and National Institute of Nuclear ...

Research paper thumbnail of Silicon carbide field effect transistors for detection of ultra-low concentrations of hazardous volatile organic compounds

Research paper thumbnail of Adjusting the electronic properties and gas reactivity of epitaxial graphene by thin surface metallization

Physica B: Condensed Matter, 2014

ABSTRACT Graphene-based chemical gas sensors normally show ultra-high sensitivity to certain gas ... more ABSTRACT Graphene-based chemical gas sensors normally show ultra-high sensitivity to certain gas molecules but at the same time suffer from poor selectivity and slow response and recovery times. Several approaches based on functionalization or modification of the graphene surface have been demonstrated as means to improve these issues, but most such measures result in poor reproducibility. In this study we investigate reproducible graphene surface modifications by sputter deposition of thin nanostructured Au or Pt layers. It is demonstrated that under the right metallization conditions the electronic properties of the surface remain those of graphene, while the surface chemistry is modified to improve sensitivity, selectivity and speed of response to nitrogen dioxide.

Research paper thumbnail of Proton driven acceleration by intense laser pulses irradiating thin hydrogenated targets

Applied Surface Science, 2013

ABSTRACT The Asterix iodine laser of the PALS laboratory in Prague, operating at 1315 nm fundamen... more ABSTRACT The Asterix iodine laser of the PALS laboratory in Prague, operating at 1315 nm fundamental frequency, 300 ps pulse duration, 600 J maximum pulse energy and 1016 W/cm2 intensity, is employed to irradiate thin hydrogenated targets placed in high vacuum. Different metallic and polymeric targets allow to generate multi-energetic and multi-specie ion beams showing peculiar properties. The plasma obtained by the laser irradiation is monitored, in terms of properties of the emitted charge particles, by using time-of-flight techniques and Thomson parabola spectrometer (TPS). A particular attention is given to the proton beam production in terms of the maximum energy, emission yield and angular distribution as a function of the laser energy, focal position (FP), target thickness and composition.

Research paper thumbnail of Silicon carbide detector for laser-generated plasma radiation

Applied Surface Science, 2013

We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiatio... more We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emitted by laser generated plasmas. The detector has been employed in time of flight (TOF) configuration within an experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5 mm 2 area 100 nm thick circular Ni SiC Schottky junction on a high purity 4H SiC epitaxial layer 115 m thick. Current signals from the detector with amplitudes up to 1.6 A have been measured, achieving voltage signals over 80 V on a 50 load resistance with excellent signal to noise ratios. Resolution of few nanoseconds has been experimentally demonstrated in TOF measurements. The detector has operated at 250 V DC bias under extreme operating conditions with no observable performance degradation.

Research paper thumbnail of Catalytic metal-gate field effect transistors based on SiC for indoor air quality control

High-temperature iridium-gated field effect transistors based on silicon carbide have been used f... more High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330 °C and at different levels of relative humidity up to 60%, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.