Dr. Keyur Patel - Academia.edu (original) (raw)
I have received my M.Sc. and Ph.D. degree in 2006 and 2013 respectively from applied physics department, The M. S. University of Baroda, Vadodara, India. I am presently working as an Assistant professor in the Science and Humanities Department, BITS edu Campus, Varnama, Vadodara. I worked extensively in the areas of electrochromic thin film devices. My current areas of research includes semiconducting thin film devices and gas sensors. I have published 16 papers in international journals, national journals and conference proceeding.
Address: India
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Papers by Dr. Keyur Patel
Synthesis and Reactivity in Inorganic Metal-organic and Nano-metal Chemistry, 2007
Journal of Materials Science-materials in Electronics, 2011
Indium tin oxide (ITO) thin films were deposited by radio frequency (RF) magnetron sputtering ont... more Indium tin oxide (ITO) thin films were deposited by radio frequency (RF) magnetron sputtering onto glass substrates. The transparent and conducting ITO thin films were obtained on externally unheated glass substrate, without any post-heat treatment, and by varying the deposition process parameters such as the working pressure and the RF Power. The effect of the variation of the above deposition parameters on the structural, surface morphology, electrical, and optical properties of the thin films have been studied. A minimum resistivity of 2.36 × 10−4 Ω cm and 80% transmittance with a figure of merit 37.2 × 10−3 Ω−1 is achieved for the thin films grown on externally unheated substrate with 75 W RF power and 0.5 mTorr working pressure.
Semiconductor Science and Technology, 2008
Schottky diodes have been fabricated by depositing Au on n-type CdSe thin films using the thermal... more Schottky diodes have been fabricated by depositing Au on n-type CdSe thin films using the thermal evaporation technique, and their properties have been investigated by current-voltage and capacitance-voltage measurements. At room temperature, the characteristics obey the pure thermionic emission theory and the barrier height has been found to be 0.63 eV. The barrier heights decrease, while ideality factors increase with decrease in temperature. Further, the activation energy plot does not provide the expected Richardson constant and barrier height values. The abnormal behavior of the barrier heights and the ideality factors with respect to temperature as well as the difference between the barrier heights measured from I-V and those from C-V or flat band have been explored on the basis of barrier height inhomogeneities.
Materials Chemistry and Physics, 2010
Materials Chemistry and Physics, 2009
Synthesis and Reactivity in Inorganic Metal-organic and Nano-metal Chemistry, 2007
Journal of Materials Science-materials in Electronics, 2011
Indium tin oxide (ITO) thin films were deposited by radio frequency (RF) magnetron sputtering ont... more Indium tin oxide (ITO) thin films were deposited by radio frequency (RF) magnetron sputtering onto glass substrates. The transparent and conducting ITO thin films were obtained on externally unheated glass substrate, without any post-heat treatment, and by varying the deposition process parameters such as the working pressure and the RF Power. The effect of the variation of the above deposition parameters on the structural, surface morphology, electrical, and optical properties of the thin films have been studied. A minimum resistivity of 2.36 × 10−4 Ω cm and 80% transmittance with a figure of merit 37.2 × 10−3 Ω−1 is achieved for the thin films grown on externally unheated substrate with 75 W RF power and 0.5 mTorr working pressure.
Semiconductor Science and Technology, 2008
Schottky diodes have been fabricated by depositing Au on n-type CdSe thin films using the thermal... more Schottky diodes have been fabricated by depositing Au on n-type CdSe thin films using the thermal evaporation technique, and their properties have been investigated by current-voltage and capacitance-voltage measurements. At room temperature, the characteristics obey the pure thermionic emission theory and the barrier height has been found to be 0.63 eV. The barrier heights decrease, while ideality factors increase with decrease in temperature. Further, the activation energy plot does not provide the expected Richardson constant and barrier height values. The abnormal behavior of the barrier heights and the ideality factors with respect to temperature as well as the difference between the barrier heights measured from I-V and those from C-V or flat band have been explored on the basis of barrier height inhomogeneities.
Materials Chemistry and Physics, 2010
Materials Chemistry and Physics, 2009