Alexey Drozdov - Academia.edu (original) (raw)

Papers by Alexey Drozdov

Research paper thumbnail of A 12–26 GHz frequency doubler GaAs MMIC

2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM), 2016

This paper presents GaAs MMIC passive frequency doubler operating in 12-26 GHz frequency range. T... more This paper presents GaAs MMIC passive frequency doubler operating in 12-26 GHz frequency range. The original topology of the frequency doubler was designed. MMIC was produced using GaAs Schottky diodes technology (“Micran” fab). The circuit is designed for a nominal value of input power of 15 dBm, a conversion loss of 15 dB.

Research paper thumbnail of Automated Synthesis of 1.5–5 GHz SiGe BiCMOS Differential Amplifiers Loaded on Resistive and Complex-Impedance Terminations

2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2018

A genetic-algorithm-based technique for automated schematic synthesis of microwave differential a... more A genetic-algorithm-based technique for automated schematic synthesis of microwave differential amplifiers loaded on arbitrary resistive or complex-impedance terminations is presented. Using this approach, two 1.5-5 GHz MMIC amplifiers were designed and fabricated with 0.25mumathrmm0.25\ \mu\mathrm{m}0.25mumathrmm SiGe BiCMOS process. The first amplifier is loaded on 50-Ohm terminations; it provides power gain GT=15pm0.5mathrmdB{G_{T}}=15\pm 0.5\ \mathrm{dB}GT=15pm0.5mathrmdB and 1-dB compression point P1dB{P}_{1{dB}}P1dB of 18 dBm. The second one used as LO buffer amplifier (BA) is loaded on complex input impedance of double-balanced mixer (DBM). The schematics and characteristics of both amplifiers are shown and compared. Also, measurements of 1–5 GHz MMIC DBM with LO BA are presented.

Research paper thumbnail of 0.01-50 GHz power detector MMICs

This work presents a pass-type ultrawideband power detector MMICs designed for operation from 10 ... more This work presents a pass-type ultrawideband power detector MMICs designed for operation from 10 MHz to 50 GHz in a wide dynamic range from -40 dBm to +25 dBm which were fabricated using GaAs zero bias diode process. Directional and non-directional detector designes are reviwed. For good wideband matching with transmission line, bonding wires parameters were taken into account at the stage of MMIC design. Result of this work includes on-wafer measurements of MMICs S-parameters and transfer characteristics.

Research paper thumbnail of A Decade Bandwidth Mixers Based on Planar Transformers and Quasi-vertical Schottky Diodes Implemented in GaAs MMIC Technology

This paper presents a decade bandwidth passive double balanced mixers implemented in GaAs MMIC te... more This paper presents a decade bandwidth passive double balanced mixers implemented in GaAs MMIC technology. The mixers employ ultra-broadband coupled balun transformers with planar structure of 3 to 30 GHz and 5 to 50 GHz bandwidth. To overcome the high level of amplitude and phase imbalance at the edge of the frequency range the classical balun was modified to novel topology structure by adding phase shifting components. The circuits are based on quasi-vertical GaAs Schottky diodes with low parasitics. The fabricated MMICs operate in 3 to 30 GHz and 5 to 50 frequency range and demonstrate -10 dB conversion loss, +12 dBm input 1 dB gain compression, 30 dB of LO-IF isolation and up to +30 dBm of input IP3 at +15 dBm input LO power.

Research paper thumbnail of Broadband GaAs MMIC frequency doublers with improved harmonic suppression

2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015

This paper presents a 12-26 GHz GaAs MMIC passive frequency doublers with improved harmonic suppr... more This paper presents a 12-26 GHz GaAs MMIC passive frequency doublers with improved harmonic suppression. The original topologies of the frequency doublers were designed. MMICs were produced using GaAs Schottky diodes technology (“Micran” fab). The circuit is designed for a nominal value of input power of +15dBm, a conversion loss of 15 dB.

Research paper thumbnail of Ultra wideband directional and undirectional power detectors

2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, 2015

The paper presents the results of development of ultra-wideband passing power detectors. The resu... more The paper presents the results of development of ultra-wideband passing power detectors. The results of modeling the monolithic integrated circuits of the power detectors with low insertion losses are reflected. It compares the characteristics of the models and the experimental data of produced the samples in a frequency range from 10 MHz to 65 GHz and over the 55 dB dynamic range. The insertion losses MMIC of the undirectional detectors are less than 1 dB up to 40 GHz, directional less than 2 dB up to 40 GHz.

Research paper thumbnail of A 12–26 GHz frequency doubler GaAs MMIC

2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM), 2016

This paper presents GaAs MMIC passive frequency doubler operating in 12-26 GHz frequency range. T... more This paper presents GaAs MMIC passive frequency doubler operating in 12-26 GHz frequency range. The original topology of the frequency doubler was designed. MMIC was produced using GaAs Schottky diodes technology (“Micran” fab). The circuit is designed for a nominal value of input power of 15 dBm, a conversion loss of 15 dB.

Research paper thumbnail of Automated Synthesis of 1.5–5 GHz SiGe BiCMOS Differential Amplifiers Loaded on Resistive and Complex-Impedance Terminations

2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2018

A genetic-algorithm-based technique for automated schematic synthesis of microwave differential a... more A genetic-algorithm-based technique for automated schematic synthesis of microwave differential amplifiers loaded on arbitrary resistive or complex-impedance terminations is presented. Using this approach, two 1.5-5 GHz MMIC amplifiers were designed and fabricated with 0.25mumathrmm0.25\ \mu\mathrm{m}0.25mumathrmm SiGe BiCMOS process. The first amplifier is loaded on 50-Ohm terminations; it provides power gain GT=15pm0.5mathrmdB{G_{T}}=15\pm 0.5\ \mathrm{dB}GT=15pm0.5mathrmdB and 1-dB compression point P1dB{P}_{1{dB}}P1dB of 18 dBm. The second one used as LO buffer amplifier (BA) is loaded on complex input impedance of double-balanced mixer (DBM). The schematics and characteristics of both amplifiers are shown and compared. Also, measurements of 1–5 GHz MMIC DBM with LO BA are presented.

Research paper thumbnail of 0.01-50 GHz power detector MMICs

This work presents a pass-type ultrawideband power detector MMICs designed for operation from 10 ... more This work presents a pass-type ultrawideband power detector MMICs designed for operation from 10 MHz to 50 GHz in a wide dynamic range from -40 dBm to +25 dBm which were fabricated using GaAs zero bias diode process. Directional and non-directional detector designes are reviwed. For good wideband matching with transmission line, bonding wires parameters were taken into account at the stage of MMIC design. Result of this work includes on-wafer measurements of MMICs S-parameters and transfer characteristics.

Research paper thumbnail of A Decade Bandwidth Mixers Based on Planar Transformers and Quasi-vertical Schottky Diodes Implemented in GaAs MMIC Technology

This paper presents a decade bandwidth passive double balanced mixers implemented in GaAs MMIC te... more This paper presents a decade bandwidth passive double balanced mixers implemented in GaAs MMIC technology. The mixers employ ultra-broadband coupled balun transformers with planar structure of 3 to 30 GHz and 5 to 50 GHz bandwidth. To overcome the high level of amplitude and phase imbalance at the edge of the frequency range the classical balun was modified to novel topology structure by adding phase shifting components. The circuits are based on quasi-vertical GaAs Schottky diodes with low parasitics. The fabricated MMICs operate in 3 to 30 GHz and 5 to 50 frequency range and demonstrate -10 dB conversion loss, +12 dBm input 1 dB gain compression, 30 dB of LO-IF isolation and up to +30 dBm of input IP3 at +15 dBm input LO power.

Research paper thumbnail of Broadband GaAs MMIC frequency doublers with improved harmonic suppression

2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015

This paper presents a 12-26 GHz GaAs MMIC passive frequency doublers with improved harmonic suppr... more This paper presents a 12-26 GHz GaAs MMIC passive frequency doublers with improved harmonic suppression. The original topologies of the frequency doublers were designed. MMICs were produced using GaAs Schottky diodes technology (“Micran” fab). The circuit is designed for a nominal value of input power of +15dBm, a conversion loss of 15 dB.

Research paper thumbnail of Ultra wideband directional and undirectional power detectors

2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, 2015

The paper presents the results of development of ultra-wideband passing power detectors. The resu... more The paper presents the results of development of ultra-wideband passing power detectors. The results of modeling the monolithic integrated circuits of the power detectors with low insertion losses are reflected. It compares the characteristics of the models and the experimental data of produced the samples in a frequency range from 10 MHz to 65 GHz and over the 55 dB dynamic range. The insertion losses MMIC of the undirectional detectors are less than 1 dB up to 40 GHz, directional less than 2 dB up to 40 GHz.